Semiconductor device

Abstract

This invention relates to a semiconductor device, comprising a first electrode, a second electrode remote from the first electrode, a semiconductor layer, and a conductive portion opposing a second semiconductor region separated by an insulating layer. The semiconductor layer is disposed in a unit region and an end region surrounding the unit region, located between the first and second electrodes in the unit region, and has a first surface on the first electrode side and a second surface on the second electrode side. It includes: a first semiconductor region of a first conductivity type disposed in the unit region and the end region; a second semiconductor region of a second conductivity type disposed in the unit region, located between the first semiconductor region and the second electrode, and electrically connected to the second electrode; a third semiconductor region of a first conductivity type disposed in the unit region, located between the second semiconductor region and the second electrode, and electrically connected to the second electrode; a plurality of protective ring regions of the second conductivity type disposed on the second surface side of the first semiconductor region in the end region and surrounding the unit region; and a first intermediate region of the second conductivity type disposed in the first semiconductor region surrounding the unit region and located between the center of the semiconductor layer and the first surface in the end region.

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