Semi-transparent perovskite solar cell and preparation method thereof

Abstract

This invention discloses a semi-transparent perovskite solar cell and its fabrication method, relating to the field of semi-transparent perovskite solar cell technology. The technical solution of this invention designs a semi-transparent perovskite solar cell by adding an interface passivation layer made of barium halide between the perovskite layer and the hole transport layer to passivate defects and improve the crystallinity of the perovskite layer. Furthermore, the interface passivation layer can also lower the energy level barrier and significantly suppress the non-radiative recombination process of charge carriers, thereby significantly improving the photoelectric conversion efficiency of the perovskite cell. In addition, this invention also adds a buffer layer made of vanadium pentoxide between the electrode and the hole transport layer, which helps to lower the energy level barrier and increase the open-circuit voltage of the semi-transparent perovskite solar cell, thereby improving the overall performance of the semi-transparent perovskite solar cell device.

Description

Technical Field

[0001] This invention relates to the field of semi-transparent perovskite solar cell technology, and particularly to a semi-transparent perovskite solar cell and its preparation method. Background Technology

[0002] All-inorganic perovskite materials, by completely eliminating organic cation components, exhibit significantly superior thermal and long-term operational stability compared to organic-inorganic hybrid perovskites, and possess a wider optical bandgap, making them ideal candidate materials for the active layer of semi-transparent solar cells. Cesium-lead-bromine tri-perovskite, in particular, has an optical bandgap that matches the visible light region of the solar spectrum, achieving a good balance between photoelectric conversion and light transmission, thus meeting the core design requirements of semi-transparent devices. However, performance breakthroughs in cesium-lead-bromine tri-based semi-transparent solar cells are still limited by inherent material defects and energy level mismatch at the device interface. Therefore, a semi-transparent perovskite solar cell needs to be designed to address these issues. Summary of the Invention

[0003] The main objective of this invention is to develop a semi-transparent perovskite solar cell with an improved structure to address the inherent defects of perovskite materials and the energy level mismatch between devices.

[0004] To achieve the above objectives, the present invention proposes a semi-transparent perovskite solar cell, comprising a conductive glass substrate, an electron transport layer, a perovskite layer, an interface passivation layer, a hole transport layer, and an electrode stacked sequentially; wherein the interface passivation layer comprises barium halide.

[0005] In one embodiment, the barium halide includes at least one of barium fluoride, barium chloride, barium bromide, and barium iodide.

[0006] In one embodiment, a buffer layer comprising vanadium pentoxide is further provided between the hole transport layer and the electrode.

[0007] In one embodiment, the hole transport layer is nickel oxide.

[0008] In one embodiment, the electrode comprises a molybdenum trioxide electrode layer, a gold electrode layer, and a molybdenum trioxide electrode layer stacked sequentially.

[0009] In one embodiment, the perovskite layer is an inorganic perovskite material.

[0010] This invention also proposes a method for preparing the semi-transparent perovskite solar cell, comprising the following steps: S10. Provide a conductive glass substrate and form an electron transport layer; S20. Thermal evaporation and annealing are performed on the surface of the electron transport layer to obtain a perovskite layer. S30. Perform thermal evaporation and annealing on the surface of the perovskite layer to obtain an interface passivation layer. S40. A hole transport layer is deposited on the surface of the interface passivation layer. Then, vanadium pentoxide is thermally evaporated and annealed on the surface of the hole transport layer to obtain a buffer layer. S50. Molybdenum trioxide, gold, and molybdenum trioxide are sequentially deposited on the surface of the buffer layer to obtain an electrode, thus completing the fabrication of the semi-transparent perovskite solar cell.

[0011] In one embodiment, during step S20, the thermal evaporation thickness of the perovskite layer is 450 nm to 600 nm.

[0012] In one embodiment, during step S30, the thermal evaporation thickness of the interface passivation layer is 1 nm to 4 nm.

[0013] In one embodiment, in step S40, nickel oxide is evaporated onto the surface of the above-mentioned interface passivation layer using an electron beam to obtain a hole transport layer, and the electron beam evaporation thickness is 20nm~35nm.

[0014] In one embodiment, during step S40, the thickness of the buffer layer during thermal evaporation is 10 nm to 25 nm.

[0015] In one embodiment, during step S20, the perovskite layer preparation process involves a thermal evaporation temperature of 400°C to 650°C and a thermal evaporation time of 120 min to 180 min; and an annealing temperature of 300°C to 340°C and an annealing time of 60 min to 90 min.

[0016] In one embodiment, during step S30, the thermal evaporation temperature is 300℃~320℃ and the thermal evaporation time is 5min~15min during the preparation of the interface passivation layer; the annealing temperature is 300℃~340℃ and the annealing time is 5min~30min.

[0017] In one embodiment, in step S40, nickel oxide is used for electron beam evaporation on the surface of the interface passivation layer, and then annealed at 300°C to 320°C for 1 to 1.5 hours to obtain the hole transport layer.

[0018] In one embodiment, during step S40, the thermal evaporation temperature is 670℃~720℃ and the thermal evaporation time is 5min~20min during the preparation of the buffer layer; the annealing temperature is 300℃~320℃ and the annealing time is 5min~20min.

[0019] The technical solution of this invention designs a semi-transparent perovskite solar cell. By adding a barium halide-based interfacial passivation layer between the perovskite layer and the hole transport layer, defects are passivated and the crystallinity of the perovskite layer is improved. Furthermore, the interfacial passivation layer also lowers the energy level barrier and significantly suppresses the non-radiative recombination process of charge carriers, thereby significantly improving the photoelectric conversion efficiency of the perovskite solar cell. In addition, this application adds a vanadium pentoxide-based buffer layer between the electrode and the hole transport layer, which helps to lower the energy level barrier and increase the open-circuit voltage of the semi-transparent perovskite solar cell, thereby improving the overall performance of the semi-transparent perovskite solar cell device. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram and a physical image of a semi-transparent perovskite solar cell structure according to an embodiment of the present invention; Figure 2 The images shown are SEM images of cross-sections of the semi-transparent perovskite solar cells in Example 2 and Comparative Example 1 of this invention.

[0022] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0023] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0024] It should be noted that if the embodiments of the present invention involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indicators will also change accordingly.

[0025] Furthermore, if the embodiments of this invention involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or" or "and / or" throughout the text includes three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this invention.

[0026] The technical problem addressed in this application is that all-inorganic perovskite materials, by completely eliminating organic cation components, exhibit significantly superior thermal and long-term operational stability compared to organic-inorganic hybrid perovskites, making them ideal candidate materials for the active layer of semi-transparent solar cells. Cesium-lead-bromine tri-perovskite, in particular, has an optical bandgap that matches the visible light region of the solar spectrum, achieving a good balance between photoelectric conversion and light transmission, thus meeting the core design requirements of semi-transparent devices. However, performance breakthroughs in cesium-lead-bromine tri-based semi-transparent solar cells are still limited by inherent material defects and energy level mismatch at the device interface. Therefore, a semi-transparent perovskite solar cell needs to be designed to solve these problems.

[0027] To address the aforementioned technical problems, this application proposes a semi-transparent perovskite solar cell, comprising a conductive glass substrate, an electron transport layer, a perovskite layer, an interface passivation layer, a hole transport layer, and an electrode, which are sequentially stacked; wherein the interface passivation layer comprises barium halide.

[0028] It should be noted that, compared to conventional perovskite solar cell devices, semi-transparent devices have thinner films and shorter carrier movement paths, making defects more significant in their impact on carrier extraction efficiency. Secondly, semi-transparent devices based on pure cesium lead bromine have a relatively narrow light absorption range and an unreasonable band structure, which limits the utilization efficiency of the solar spectrum and makes it difficult to break through the bottleneck in photoelectric conversion efficiency for a long time, thus failing to meet the practical application needs of scenarios such as building-integrated photovoltaics.

[0029] Specifically, this invention adds an interface passivation layer between the perovskite layer and the hole transport layer, which is beneficial for passivating interface defects and promoting uniform growth of perovskite grains, thereby improving crystal quality; it can also increase the contact area between the perovskite layer and the hole transport layer; and the unique ionic radius and electronegativity of barium ions can optimize the band structure of cesium lead bromide triperovskite materials, reduce the energy level barrier and suppress the nonradiative recombination process of charge carriers, thereby improving the performance of semi-transparent perovskite solar cell devices.

[0030] In one embodiment, the barium halide includes at least one of barium fluoride, barium chloride, barium bromide, and barium iodide.

[0031] Specifically, the use of barium ions can promote the uniform growth of cesium lead bromide triperovskite grains and improve the crystal quality, thereby passing off defects. The unique ionic radius and electronegativity of barium ions can reduce the energy level barrier and significantly suppress the nonradiative recombination process of charge carriers, thereby improving the performance of semi-transparent perovskite solar cell devices.

[0032] In one embodiment, a buffer layer comprising vanadium pentoxide is further provided between the hole transport layer and the electrode.

[0033] Specifically, vanadium pentoxide is used as a buffer layer. Vanadium pentoxide has a work function of 5.3 eV to 5.8 eV, which can create a continuous energy level gradient between the electrode and the hole transport layer, thereby accelerating the directional transport of holes and blocking the directional diffusion of electrons. Vanadium pentoxide can also passivate surface defects in nickel oxide and reduce interfacial contact resistance, thus improving device stability. Therefore, this invention optimizes the overall structure of perovskite solar cells, adds an interfacial passivation layer and a buffer layer, and uses a hole transport layer and electrodes made of specific materials, achieving a significant improvement in photoelectric conversion efficiency.

[0034] It should also be noted that vanadium pentoxide has a visible light transmittance of 80% to 90%, and its nanofilm does not sacrifice the transmittance of the device. It can meet the core requirements of semi-transparent devices and is an ideal choice that is significantly superior to other organic and inorganic buffer layers.

[0035] In one embodiment, the perovskite layer is an inorganic perovskite material. Specifically, an all-inorganic perovskite material, which completely eliminates organic cation components, exhibits significantly better thermal stability and long-term operational stability than organic-inorganic hybrid perovskites.

[0036] In one specific embodiment, the perovskite layer comprises cesium lead bromide triperovskite.

[0037] Specifically, the optical bandgap of CsPbBr3 is adapted to the visible light region of the solar spectrum, achieving a good balance between photoelectric conversion and light transmission, which meets the core design requirements of semi-transparent devices.

[0038] In a preferred embodiment, the perovskite layer is prepared by sequentially depositing a cesium bromide layer and a lead bromide layer on the surface of the electron transport layer; preferably, the thickness ratio of the cesium bromide layer to the lead bromide layer is 1:1.1~1.2.

[0039] Specifically, cesium lead bromide triperovskite has a regular ABX3 type perovskite lattice structure with an optical band gap of approximately 2.3 eV, corresponding to an absorption edge of approximately 530 nm to 540 nm. This characteristic allows it to efficiently absorb blue and green photons with wavelengths less than 540 nm in the visible light band for photoelectric conversion; while its absorption capacity for yellow, orange, and red visible light with wavelengths greater than 540 nm is extremely weak. Most of this wavelength light can directly penetrate the thin film, providing the core optical basis for its semi-transparency.

[0040] In one embodiment, the hole transport layer is nickel oxide.

[0041] In one embodiment, the electrode comprises a molybdenum trioxide electrode layer, a gold electrode layer, and a molybdenum trioxide electrode layer stacked sequentially.

[0042] Specifically, the electrode in this embodiment adopts a multilayer sandwich electrode structure of "molybdenum trioxide / gold / molybdenum trioxide". The gold electrode layer, as a highly conductive metal core layer, undertakes the main lateral charge transport function and can significantly reduce Joule loss. The molybdenum trioxide electrode layer close to the buffer layer forms a stepped energy level match with it, which effectively reduces the potential barrier for holes to be extracted from the perovskite layer to the metal electrode. The molybdenum trioxide electrode layer far from the buffer layer mainly plays an optical control and protection role. On the one hand, it forms an antireflection film and suppresses the reflection of the gold layer, thereby increasing the transmittance of the electrode in the visible light range. On the other hand, it can effectively isolate moisture and oxygen in the air and prevent corrosion of the gold electrode layer.

[0043] By adopting the above technical solution, a stepped energy level is formed between the perovskite layer, the interface passivation layer, the hole transport layer, the buffer layer and the electrode, which reduces the energy level barrier and suppresses the nonradiative recombination process of charge carriers, thereby improving the performance of semi-transparent perovskite solar cell devices.

[0044] This invention also proposes a method for preparing the semi-transparent perovskite solar cell, comprising the following steps: S10. Provide a conductive glass substrate and form an electron transport layer; S20. Thermal evaporation and annealing are performed on the surface of the electron transport layer to obtain a perovskite layer. S30. Perform thermal evaporation and annealing on the surface of the perovskite layer to obtain an interface passivation layer. S40. A hole transport layer is deposited on the surface of the interface passivation layer. Then, vanadium pentoxide is thermally evaporated and annealed on the surface of the hole transport layer to obtain a buffer layer. S50. Molybdenum trioxide, gold, and molybdenum trioxide are sequentially deposited on the surface of the buffer layer to obtain an electrode, thus completing the fabrication of the semi-transparent perovskite solar cell.

[0045] In one embodiment, during step S20, the thermal evaporation thickness of the perovskite layer is 450 nm to 600 nm.

[0046] In one embodiment, during step S30, the thermal evaporation thickness of the interface passivation layer is 1 nm to 4 nm.

[0047] In one embodiment, in step S40, nickel oxide is evaporated onto the surface of the above-mentioned interface passivation layer using an electron beam to obtain a hole transport layer, and the electron beam evaporation thickness is 20nm~35nm.

[0048] In one embodiment, during step S40, the thickness of the buffer layer during thermal evaporation is 10 nm to 25 nm.

[0049] In one embodiment, during step S20, the perovskite layer preparation process involves a thermal evaporation temperature of 400°C to 650°C and a thermal evaporation time of 120 min to 180 min; and an annealing temperature of 300°C to 340°C and an annealing time of 60 min to 90 min.

[0050] In one embodiment, during step S30, the thermal evaporation temperature is 300℃~320℃ and the thermal evaporation time is 5min~15min during the preparation of the interface passivation layer; the annealing temperature is 300℃~340℃ and the annealing time is 5min~30min.

[0051] In one embodiment, in step S40, nickel oxide is used for electron beam evaporation on the surface of the interface passivation layer, and then annealed at 300°C to 320°C for 1 to 1.5 hours to obtain the hole transport layer.

[0052] In one embodiment, during step S40, the thermal evaporation temperature is 670℃~720℃ and the thermal evaporation time is 5min~20min during the preparation of the buffer layer; the annealing temperature is 300℃~320℃ and the annealing time is 5min~20min.

[0053] The present invention will be further illustrated below through specific embodiments: All raw materials used in the embodiments of this invention are commercially available, and this invention does not impose any restrictions on the source of raw materials.

[0054] Example 1 The method for fabricating the semi-transparent perovskite solar cell in Example 1 includes the following steps: S10. Provide an FTO conductive glass with a light transmittance of over 80%, and sequentially clean and air dry it to serve as a conductive glass substrate; deposit a SnO2 electron transport layer on the surface of the conductive glass substrate at a temperature of 70°C for 2.5 hours. S20. A cesium lead bromide perovskite layer is deposited on the surface of the electron transport layer by evaporation. The cesium bromide layer and the lead bromide layer are deposited sequentially on the surface of the electron transport layer. The thickness ratio of the cesium bromide layer to the lead bromide layer is 1:1.1. The perovskite film with a thickness of 500 nm is obtained by thermal evaporation at 500°C for about 140 min. Then, the film is annealed at 300°C for 60 min to obtain the perovskite layer. S30. The perovskite layer is thermally evaporated at 320°C for 10 min to form a barium chloride film with a thickness of 1 nm. The film is then annealed at 320°C for 10 min to obtain an interface passivation layer. S40. Electron beam evaporation of nickel oxide particles is used on the surface of the interface passivation layer to obtain a nickel oxide layer with a thickness of 30 nm. Then, the layer is annealed at 300 °C for 1 h to obtain a hole transport layer. S50. A 10 nm molybdenum trioxide layer, a 1 nm gold layer, and a 10 nm molybdenum trioxide layer are sequentially deposited on the surface of the hole transport layer to obtain an electrode, thus completing the fabrication of the semi-transparent perovskite solar cell.

[0055] Example 2 Example 2 is based on Example 1, except that in step S30 of Example 2, a barium chloride film layer of about 2 nm is formed by thermal evaporation.

[0056] Example 3 Example 3 is based on Example 1, except that in step S30 of Example 3, a barium chloride film layer of about 3 nm is formed by thermal evaporation.

[0057] Example 4 Example 4 is based on Example 1, except that in step S30 of Example 4, a barium chloride film layer of about 4 nm is formed by thermal evaporation.

[0058] Example 5 Example 5 is based on Example 2, except that step S40 in Example 5 further includes: Vanadium pentoxide was thermally evaporated on the surface of the hole transport layer to obtain a 10 nm thick film, which was then annealed at 300 °C for 10 min to obtain a buffer layer.

[0059] like Figure 1As shown, the perovskite solar cell in Example 5 includes a conductive glass substrate, an electron transport layer (ETL), a perovskite layer, an interface passivation layer (CsPbBr3 with BaX2), and a hole transport layer (NiO2) stacked sequentially. X ), buffer layer (V2O5) and electrode (MoO3 / Au / MoO3).

[0060] Example 6 Example 6 is based on Example 2, except that step S40 of Example 6 further includes: Vanadium pentoxide was thermally evaporated on the surface of the hole transport layer to obtain a film with a thickness of 15 nm, and then annealed at 300 °C for 10 min to obtain a buffer layer.

[0061] like Figure 1 As shown, the perovskite solar cell in Example 6 includes a conductive glass substrate, an electron transport layer (ETL), a perovskite layer, an interface passivation layer (CsPbBr3 with BaX2), and a hole transport layer (NiO) stacked sequentially. X ), buffer layer (V2O5) and electrode (MoO3 / Au / MoO3).

[0062] Example 7 Example 7 is based on Example 2, except that step S40 of Example 7 further includes: Vanadium pentoxide was thermally evaporated on the surface of the hole transport layer to obtain a film with a thickness of 20 nm, and then annealed at 300 °C for 10 min to obtain a buffer layer.

[0063] like Figure 1 As shown, the perovskite solar cell in Example 7 includes a conductive glass substrate, an electron transport layer (ETL), a perovskite layer, an interface passivation layer (CsPbBr3 with BaX2), and a hole transport layer (NiO2) stacked sequentially. X ), buffer layer (V2O5) and electrode (MoO3 / Au / MoO3).

[0064] Example 8 Example 8 is based on Example 2, except that step S40 of Example 8 further includes: Vanadium pentoxide was thermally evaporated on the surface of the hole transport layer to obtain a film with a thickness of 25 nm, and then annealed at 300 °C for 10 min to obtain a buffer layer.

[0065] like Figure 1As shown, the perovskite solar cell in Example 8 includes a conductive glass substrate, an electron transport layer (ETL), a perovskite layer, an interface passivation layer (CsPbBr3 with BaX2), and a hole transport layer (NiO) stacked sequentially. X ), buffer layer (V2O5) and electrode (MoO3 / Au / MoO3).

[0066] Comparative Example 1 The method for fabricating the semi-transparent perovskite solar cell in Comparative Example 1 includes the following steps: S10. Provide an FTO conductive glass with a light transmittance of over 80%, and sequentially clean and air dry it to serve as a conductive glass substrate; deposit a SnO2 electron transport layer on the surface of the conductive glass substrate at a temperature of 70°C for 2.5 hours. S20. A cesium-lead-bromine three-film layer is deposited on the surface of the electron transport layer by vapor deposition and then annealed to obtain a perovskite layer. S30. Electron beam evaporation of nickel oxide particles is used on the surface of the perovskite layer to obtain a hole transport layer. S50. Molybdenum trioxide, gold, and molybdenum trioxide are sequentially deposited on the surface of the hole transport layer to obtain an electrode, thus completing the fabrication of the semi-transparent perovskite solar cell.

[0067] Performance testing: (1) The cross-sections of the translucent perovskite solar cells prepared in Example 2 and Comparative Example 1 were photographed using an electron microscope, as shown in the figure. Figure 2 ; (2) The perovskite solar cells prepared in the above examples and comparative examples were tested using a solar simulator (with a xenon lamp as the light source) at a standard solar intensity (AM1.5G, 100mW / cm²). 2 The solar simulator was tested using silicon diodes (equipped with KG9 visible filters) at the National Renewable Energy Laboratory in the United States. The device with an effective area of ​​0.3cm × 0.3cm achieved a maximum efficiency of 11.20%, and the corresponding test results are shown in Table 1.

[0068]

[0069] Depend on Figure 2 It can be seen that obvious pores appear between the perovskite layer and the hole transport layer in Comparative Example 1, while no obvious pores appear in Example 2.

[0070] Analysis of the data in Table 1 and comparison of Examples 1-4 with Comparative Example 1 shows that the open-circuit voltage of the perovskite solar cell without an interface passivation layer is significantly lower than that of Examples 1-4, while the short-circuit current density is not significantly different. This is because the defects and interface states present at the interface between the perovskite layer and the electrode trap carriers, leading to an increase in carrier recombination, thereby reducing the open-circuit voltage while keeping the current density from changing significantly.

[0071] Comparing Examples 5-8 with Examples 1-4, it can be seen that with the addition of the buffer layer, the open-circuit voltage of the perovskite solar cell further increases because: vanadium pentoxide, as a buffer layer, optimizes the energy level between the hole transport layer and molybdenum trioxide in the transparent electrode, and improves the recombination impedance of the device, thus further enhancing the open-circuit voltage of the device.

[0072] In summary, the addition of the interface passivation layer in this application effectively suppresses the generation of pore defects in the thin film, which not only improves the open-circuit voltage and suppresses non-radiative recombination of charge carriers, but also further enhances the open-circuit voltage of the device by adding a buffer layer, providing a new approach for the industrialization of semi-transparent perovskite solar cells.

[0073] The above description is merely an exemplary embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural transformations made using the contents of the present invention specification and drawings under the technical concept of the present invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present invention.

Claims

1. A semi-transparent perovskite solar cell, characterized in that, The semi-transparent perovskite solar cell comprises a conductive glass substrate, an electron transport layer, a perovskite layer, an interface passivation layer, a hole transport layer, and an electrode, which are stacked sequentially. The interface passivation layer includes barium halide.

2. The semi-transparent perovskite solar cell as described in claim 1, characterized in that, The barium halide includes at least one of barium fluoride, barium chloride, barium bromide, and barium iodide.

3. The semi-transparent perovskite solar cell as described in claim 1, characterized in that, A buffer layer comprising vanadium pentoxide is also provided between the hole transport layer and the electrode.

4. The semi-transparent perovskite solar cell as described in claim 3, characterized in that, The hole transport layer is nickel oxide.

5. The semi-transparent perovskite solar cell as described in claim 3, characterized in that, The electrode comprises a molybdenum trioxide electrode layer, a gold electrode layer, and a molybdenum trioxide electrode layer stacked sequentially.

6. The semi-transparent perovskite solar cell as described in claim 1, characterized in that, The perovskite layer is an inorganic perovskite material.

7. A method for preparing a semi-transparent perovskite solar cell according to any one of claims 1 to 6, characterized in that, The method for fabricating the semi-transparent perovskite solar cell includes the following steps: S10. Provide a conductive glass substrate and form an electron transport layer; S20. Thermal evaporation and annealing are performed on the surface of the electron transport layer to obtain a perovskite layer. S30. Thermal evaporation and annealing are performed on the surface of the perovskite layer to obtain an interface passivation layer. S40. A hole transport layer is deposited on the surface of the interface passivation layer. Then, vanadium pentoxide is thermally evaporated and annealed on the surface of the hole transport layer to obtain a buffer layer. S50. Molybdenum trioxide, gold, and molybdenum trioxide are sequentially deposited on the surface of the buffer layer to obtain an electrode, thus completing the fabrication of the semi-transparent perovskite solar cell.

8. The method for preparing a semi-transparent perovskite solar cell as described in claim 7, characterized in that, In step S20, during the preparation of the perovskite layer, the thermal evaporation thickness is 450nm~600nm; And / or, in step S30, the thermal evaporation thickness during the preparation of the interface passivation layer is 1 nm to 4 nm; And / or, in step S40, nickel oxide is evaporated onto the surface of the above-mentioned interface passivation layer by electron beam to obtain a hole transport layer, and the electron beam evaporation thickness is 20nm~35nm; And / or, in step S40, during the preparation of the buffer layer, the thermal evaporation thickness is 10nm~25nm.

9. The method for preparing a semi-transparent perovskite solar cell as described in claim 7, characterized in that, In step S20, during the preparation of the perovskite layer, the thermal evaporation temperature is 400℃~650℃ and the thermal evaporation time is 120min~180min; the annealing temperature is 300℃~340℃ and the annealing time is 60min~90min. And / or, in step S30, during the preparation of the interface passivation layer, the thermal evaporation temperature is 300℃~320℃, the thermal evaporation time is 5min~15min; the annealing temperature is 300℃~340℃, and the annealing time is 5min~30min. And / or, in step S40, nickel oxide is used for electron beam evaporation on the surface of the interface passivation layer, and then annealed at 300℃~320℃ for 1h~1.5h to obtain the hole transport layer. And / or, in step S40, during the preparation of the buffer layer, the thermal evaporation temperature is 670℃~720℃, the thermal evaporation time is 5min~20min; the annealing temperature is 300℃~320℃, and the annealing time is 5min~20min.

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