Black quartz etching solution and application thereof
By using a specific ratio of black quartz etching solution and a high-cleanliness cleaning method, the problem of metal ion residue in black quartz materials during advanced manufacturing processes was solved, achieving a high-cleanliness black quartz material surface and improving the yield rate of chip production.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHONGQING GENORI IND CO LTD
- Filing Date
- 2026-05-09
- Publication Date
- 2026-07-14
AI Technical Summary
Traditional cleaning methods cannot effectively control the residual metal ions in black quartz materials during advanced manufacturing processes, leading to a decrease in chip yield.
A high-cleanliness cleaning method is formed by using a black quartz etching solution with a specific ratio, including etchant, stabilizer, metal corrosion inhibitor, surfactant and defoamer, combined with carbon dioxide snowflake cleaning and SC1 dilute nitric acid treatment.
It effectively removes the sub-damaged layer and micro-broken particles from the surface of black quartz material, controls the concentration of metal ions, meets the cleanliness requirements of high-process semiconductor equipment, and improves chip yield.
Smart Images
Figure SMS_1
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor material cleaning technology, specifically to a black quartz etching solution and its application. Background Technology
[0002] With the advancement of semiconductor technology, in order to adapt to the application scenarios of semiconductor chip manufacturing, the industry has added dopants such as carbon black, iron oxide, and manganese oxide to the traditional high-purity quartz material to form black quartz material. Compared with high-purity quartz material, black quartz material has the characteristics of high optical absorption rate and high emissivity. Semiconductor components made from black quartz material have higher thermal uniformity and can also effectively shield heat radiation, and have been widely used in the manufacturing of semiconductor equipment.
[0003] In advanced chip manufacturing processes, vacuum equipment has extremely stringent requirements regarding contamination from external metal ions. Therefore, semiconductor equipment components, such as high-purity quartz and black quartz, need to be cleaned to meet the requirements of these processes. Currently, the industry largely uses standard cleaning methods for traditional high-purity transparent quartz, employing hydrofluoric acid for corrosive cleaning. However, since black quartz is itself a doped material, the dopant reacts violently with the strong acid during traditional cleaning methods, releasing the doped metals and leaving metal ion residues on the surface. If this high-metal-ion-residue black quartz is used in the fabrication of advanced semiconductor equipment, it will significantly reduce chip yield.
[0004] In summary, traditional cleaning methods for high-purity quartz and conventional cleaning and etching solutions are no longer sufficient to meet the ultra-low metal ion requirements of black quartz materials in advanced manufacturing processes. Therefore, given the inherent doping characteristics of black quartz materials, there is an urgent need to develop a high-purity cleaning method that can effectively control the release of metal ions, as well as a dedicated etching solution for black quartz. Summary of the Invention
[0005] The technical problem to be solved by this invention is: how to reduce the residual metal ions in the cleaning process of black quartz materials.
[0006] To address the aforementioned technical problems, the first aspect of this invention provides a black quartz etching solution, wherein, by mass percentage, the black quartz etching solution comprises: 1.5%~4% etchant; 5%~10% stabilizer; 0.1%~0.6% metal corrosion inhibitor; 0.1%~0.3% surfactant; 0.05%~0.1% defoamer; The remainder is water.
[0007] Preferably, the etchant is selected from any one or more of ammonium fluoride, ammonium bifluoride, and electronic-grade hydrofluoric acid.
[0008] Preferably, the stabilizer is selected from any one or more of nitric acid, sulfuric acid, aminosulfonic acid, citric acid, acetic acid, tartaric acid, salicylic acid, and tannic acid.
[0009] Preferably, the metal corrosion inhibitor is selected from any one or more of thiourea, methylbenzotriazole, and hydroxyethylidene diphosphonic acid.
[0010] Preferably, the surfactant is selected from one or more of BYK-346, polyethylene glycol, and cocamidopropyl betaine.
[0011] Preferably, the defoamer is isopropanol and / or a silicone defoamer.
[0012] The black quartz etching solution provided by this invention can effectively remove the sub-damaged layer on the surface of black quartz materials while effectively controlling the concentration of metal ions on the surface of the black quartz materials. Specifically, the etchant in the black quartz etching solution mainly provides fluoride ions, which can react with the black quartz matrix to effectively etch and remove the sub-damaged layer on the surface of the black quartz materials. The stabilizer provides protic acid to the etching solution to maintain the pH of the black quartz etching solution, ensuring a stable etching rate. Simultaneously, the stabilizer can also be used for metal ion complexation, controlling the concentration of metal ions on the surface of the black quartz materials. The metal corrosion inhibitor protects the dopants in the black quartz during the etching process, slowing down the reaction between the black quartz dopants and the etchant, thereby reducing the release of metal ions. The surfactant acts as a dispersant, wetting the surface of the black quartz materials, allowing the etching solution to contact the surface of the black quartz materials more evenly, ensuring the uniformity of etching. The defoamer eliminates bubbles generated during the etching process, avoiding uneven etching caused by bubbles.
[0013] A second aspect of the present invention provides an application of the black quartz etching solution described in the first aspect, the application comprising using the black quartz etching solution for cleaning black quartz materials.
[0014] A third aspect of this invention provides a high-purity cleaning method for black quartz material, comprising the following steps: S1. Degreasing treatment: Ultrasonic degreasing treatment of black quartz material is performed using degreasing solution; S2, Snowflake Cleaning: Carbon dioxide snowflake cleaning is performed on the degreased black quartz material; S3. Etching treatment: Etching the black quartz material after snowflake cleaning using the black quartz etching solution described in the first aspect. S4. Impurity Removal: The etched black quartz material is treated sequentially with SC1 and dilute nitric acid. S5. Pure water cleaning: Use pure water to clean the black quartz material after impurity removal to obtain high-purity black quartz material.
[0015] Preferably, in step S4, by volume, SC1 comprises 1 part of 25%~28% ammonia water, 1 part of 30%~35% hydrogen peroxide solution, and 4 parts of water.
[0016] Preferably, in step S4, the concentration of the dilute nitric acid is 2%.
[0017] The high-purity cleaning method for black quartz material provided by the present invention firstly degreases the black quartz material, which can effectively remove residual cutting fluid and other oily substances during the processing of black quartz material.
[0018] Then, the degreased black quartz material is subjected to carbon dioxide snow cleaning. In the technical solution provided by this invention, the role of carbon dioxide snow cleaning is to remove fine particulate matter embedded on the surface of the black quartz material. Carbon dioxide snow cleaning differs from traditional carbon dioxide cleaning. In the traditional carbon dioxide cleaning process, dry ice is directly used to treat the black quartz material. Although the kinetic energy impact and low temperature effect generated by the high-speed impact of dry ice particles can remove contaminants embedded on the surface of the black quartz due to temperature difference and airflow, the black quartz substrate may also suffer secondary damage due to the impact of dry ice particles. In contrast, during carbon dioxide snow cleaning, liquid carbon dioxide cools rapidly as it passes through the nozzle, forming fine snowflake particles. At this time, relying on low-temperature embrittlement and airflow impact, carbon dioxide snow cleaning can peel contaminants from the surface of the black quartz through temperature difference, which can effectively avoid secondary damage to the black quartz substrate.
[0019] As mentioned above, in the high-purity cleaning method for black quartz material provided by the present invention, the black quartz material is treated with the black quartz etching solution provided by the first aspect of the present invention. This can effectively remove the sub-damaged layer caused by processing of the black quartz material, while controlling the selective corrosion of dopants on the surface of the black quartz material, thereby avoiding the generation of a large number of metal ions.
[0020] After etching, the black quartz material is treated sequentially with SC1 and dilute nitric acid to quickly remove adhering particles and metal ions from the surface, thereby obtaining a high-purity black quartz material. The high-purity black quartz material obtained by the cleaning method provided by this invention can be directly used in the manufacture of semiconductor processing equipment.
[0021] Compared with the prior art, the present invention has the following beneficial effects: 1. The black quartz etching solution provided by the present invention, through the synergistic effect of etchant, stabilizer and metal corrosion inhibitor, can effectively etch and remove the sub-damaged layer on the surface of black quartz material while protecting the dopants inside the black quartz material, avoiding the large-scale dissolution of metal ions during the cleaning process, and reducing the metal residue in the cleaning process of black quartz material from the source. 2. The high-cleanliness cleaning method for black quartz material provided by the present invention uses carbon dioxide snowflake cleaning and a black quartz etching solution with a specific ratio to effectively remove micro-damaged particles and sub-damaged layers, while quickly and efficiently removing impurities and metal ions from the surface of the black quartz material, and also avoids secondary damage to the black quartz material during the cleaning process. 3. The high-cleanliness cleaning method for black quartz etching solution and black quartz material provided by this invention can ensure that the surface cleanliness of black quartz material meets the requirements for the preparation of high-process semiconductor equipment, significantly reducing the risk of defective chips caused by contamination of external parts, and ensuring the yield rate of chip production. This lays the foundation for the large-scale commercialization of black quartz material in the field of core components of semiconductor equipment, and has extremely high industrial transformation value and long-term economic benefits. Detailed Implementation
[0022] The embodiments of the technical solution of the present invention will be described in detail below. These embodiments are only used to illustrate the technical solution of the present invention more clearly, and are therefore merely examples and should not be used to limit the scope of protection of the present invention.
[0023] It should be noted that the endpoints and any values of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values should be understood to include values close to these ranges or values. For numerical ranges, the endpoint values of the various ranges, the endpoint values of the various ranges and individual point values, and individual point values can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.
[0024] To address the problem of excessive metal ion residue in existing black quartz material cleaning methods, which makes black quartz material unsuitable for use in high-process semiconductor equipment, this invention provides a black quartz etching solution, comprising, by mass percentage: 1.5%~4% etchant; 5%~10% stabilizer; 0.1%~0.6% metal corrosion inhibitor; 0.1%~0.3% surfactant; 0.05%~0.1% defoamer; The remainder is water.
[0025] In the above embodiments, the etchant is selected from any one or more of ammonium fluoride, ammonium bifluoride, and electronic-grade hydrofluoric acid.
[0026] More specifically, in the above embodiments, the concentration of electronic-grade hydrofluoric acid is preferably 40% to 49%.
[0027] In the above embodiments, the stabilizer is selected from any one or more of nitric acid, sulfuric acid, aminosulfonic acid, citric acid, acetic acid, tartaric acid, salicylic acid, and tannic acid.
[0028] More specifically, in the above embodiments, the concentration of nitric acid is preferably 50% to 70%.
[0029] More specifically, in the above embodiments, the concentration of sulfuric acid is preferably 50% to 98%.
[0030] More specifically, in the above embodiments, when the stabilizer contains EDTA, the residual metal ions after black quartz etching solution is treated with black quartz can be further reduced. Therefore, adding EDTA to the stabilizer is beneficial to black quartz etching solution.
[0031] In the above embodiments, the metal corrosion inhibitor is selected from any one or more of thiourea, methylbenzotriazole, and hydroxyethylidene diphosphonic acid.
[0032] In the above embodiments, the surfactant is selected from any one or more of BYK-346, polyethylene glycol, and cocamidopropyl betaine.
[0033] More specifically, in the above embodiments, the molecular weight of polyethylene glycol is preferably 400 to 800.
[0034] In the above embodiments, the defoamer is isopropanol and / or silicone defoamer.
[0035] More specifically, the silicone defoamer in the above embodiments is preferably Antifoam AF and / or Antifoam SE-15.
[0036] More specifically, in the above embodiments, the black quartz etching solution is prepared by adding an etchant, a stabilizer, a metal corrosion inhibitor, a surfactant, and an antifoaming agent sequentially to ultrapure water at a temperature of 20-30°C, and stirring until fully dissolved to obtain the black quartz etching solution.
[0037] The present invention also provides a high-purity cleaning method for black quartz materials. By using the aforementioned black quartz etching solution in conjunction with this cleaning method, high-purity cleaning of black quartz materials can be achieved.
[0038] The above cleaning method includes the following steps: S1. Degreasing treatment: Ultrasonic degreasing treatment of black quartz material is performed using degreasing solution; S2, Snowflake Cleaning: Carbon dioxide snowflake cleaning is performed on the degreased black quartz material; S3. Etching treatment: The black quartz material after snowflake cleaning is etched using the aforementioned black quartz etching solution. S4. Impurity Removal: The etched black quartz material is treated sequentially with SC1 and dilute nitric acid. S5. Pure water cleaning: Use pure water to clean the black quartz material after impurity removal to obtain high-purity black quartz material.
[0039] More specifically, in the above embodiment, step S1 includes the following steps: at 40~70°C, using a degreasing solution with pH=9.0~10.0, oscillate and clean in a cleaning tank with an ultrasonic frequency of 40kHz for 10~30 minutes, remove the black quartz parts, rinse with pure water, and dry with high-purity nitrogen.
[0040] More specifically, in the above embodiments, the degreasing agent can be any commercially available degreasing agent.
[0041] More specifically, in the above embodiments, the preferred parameters for carbon dioxide snowflake cleaning are: snowflake pressure of 0.2~1MPa, liquid carbon dioxide flow rate of 5~30L / min, nozzle distance from component of 100~200mm, spray angle of 30°~90°, and cleaning time of 5~10min.
[0042] More specifically, step S3 of the above embodiment includes the following steps: placing the black quartz material cleaned with carbon dioxide snowflakes into an etching tank, etching it with the aforementioned black quartz etching solution at a temperature of 15~35°C for 10~35 minutes, and after etching, removing the black quartz material and rinsing it with pure water.
[0043] More specifically, in the above embodiment, step S4 includes the following steps: S41: Immerse the etched black quartz material in SC1 at room temperature for 10-20 minutes. After immersion, rinse the black quartz material with pure water. S42: Immerse the black quartz material in dilute nitric acid at room temperature for 3-5 minutes. After immersion, rinse the black quartz material with pure water and dry it with nitrogen.
[0044] More specifically, in the above embodiment, step S5 includes the following steps: At room temperature, pure water is used as the cleaning agent to ultrasonically clean the black quartz material. The preferred ultrasonic cleaning conditions are: frequency 100~120KHz and cleaning time 10~30min.
[0045] In the above embodiments, by volume, SC1 comprises 1 part of 25%~28% ammonia water, 1 part of 30%~35% hydrogen peroxide solution, and 4 parts of water.
[0046] In steps S4 and S42 of the above embodiment, the concentration of dilute nitric acid is 2%.
[0047] More specifically, in the above embodiments, the black quartz material is preferably unprocessed black quartz raw material or processed black quartz material parts.
[0048] The technical solutions of the present invention are further described below through specific embodiments. Unless otherwise defined, all terms, symbols, and other scientific terms used herein are intended to have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. In some cases, terms with conventionally understood meanings are limited herein for clarification or ease of reference, and such limitations should not be construed as indicating a significant difference from conventional understanding in the art. The technical methods described or referenced herein are generally well understood by those skilled in the art and have been adopted through conventional methods. Example 1
[0049] Cleaning of black quartz parts The following steps are used to clean the precision-machined black quartz parts: S1. Degreasing treatment: Place the black quartz parts in a degreasing tank at a temperature of 60°C. Use a commercially available degreasing solution with a pH of 9.0~10.0 for ultrasonic cleaning. The ultrasonic frequency is 40kHz and the ultrasonic oscillation cleaning time is 15 minutes. After cleaning, remove the black quartz parts and rinse them with pure water and dry them with compressed air. S2. Snowflake cleaning: Place the black quartz parts in a carbon dioxide snowflake cleaning machine to perform carbon dioxide snowflake cleaning on the degreased black quartz material. The pressure of the carbon dioxide snowflake cleaning machine is set to 0.4 MPa, the liquid carbon dioxide flow rate is set to 20 L / min, the spray angle is 45 degrees, the distance between the spray gun nozzle and the quartz surface is 120 mm, and the equipment runs for 8 minutes to complete the carbon dioxide snowflake cleaning. S3. Etching Treatment: By weight, take 1 part ammonium fluoride, 0.5 parts electronic grade 49% hydrofluoric acid, 2 parts 67% nitric acid, 1.5 parts citric acid, 0.5 parts tannic acid, 1 part sodium EDTA, 0.03 parts thiourea, 0.1 parts methylbenzotriazole, 0.02 parts hydroxyethylidene diphosphonic acid, 0.1 parts BYK-346, 0.08 parts isopropanol, and 0.02 parts Antifoam AF. Add ultrapure water to bring the total to 100 parts. After dissolving all solutes in ultrapure water, let it stand to obtain a clear and transparent black quartz etching solution. Place the black quartz parts in the etching tank and etch them using the aforementioned black quartz etching solution. The etching temperature is set to 20℃, and the etching time is set to 60 minutes. After etching, remove the black quartz parts and rinse them thoroughly with pure water. S4. Impurity Removal: Prepare SC1 by volume (NH4OH:H2O2:H2O = 1:1:4) and immerse the etched black quartz parts at room temperature for 15 minutes. After immersion, remove the black quartz parts, rinse with pure water, and then immerse again with 2% nitric acid for 5 minutes. After immersion, remove the black quartz parts, rinse with pure water for 3 minutes, and then dry with nitrogen. S5. Pure water cleaning: The black quartz parts are cleaned in a Class 100 cleanroom using 120KHz ultrasonic waves and 18 megohm ultrapure water for 15 minutes. After cleaning, the parts are rinsed with pure water and dried with nitrogen. The black quartz parts are then placed in a 150℃ oven for 2 hours to obtain high-cleanliness black quartz parts. Example 2
[0050] Cleaning of black quartz parts The following steps are used to clean the precision-machined black quartz parts: S1. Degreasing treatment: Place the black quartz parts in a degreasing tank at a temperature of 60°C. Use a commercially available degreasing solution with a pH of 9.0~10.0 for ultrasonic cleaning. The ultrasonic frequency is 40kHz and the ultrasonic oscillation cleaning time is 15 minutes. After cleaning, remove the black quartz parts and rinse them with pure water and dry them with compressed air. S2. Snowflake cleaning: Place the black quartz parts in a carbon dioxide snowflake cleaning machine to perform carbon dioxide snowflake cleaning on the degreased black quartz material. The pressure of the carbon dioxide snowflake cleaning machine is set to 0.4 MPa, the liquid carbon dioxide flow rate is set to 20 L / min, the spray angle is 45 degrees, the distance between the spray gun nozzle and the quartz surface is 120 mm, and the equipment runs for 8 minutes to complete the carbon dioxide snowflake cleaning. S3. Etching Treatment: By weight, take 2.5 parts ammonium fluoride, 1.5 parts electronic grade 49% hydrofluoric acid, 2 parts 67% nitric acid, 4 parts citric acid, 2.5 parts tannic acid, 1 part sodium EDTA, 0.05 parts thiourea, 0.15 parts methylbenzotriazole, 0.05 parts hydroxyethylidene diphosphonic acid, 0.3 parts BYK-346, 0.02 parts isopropanol, and 0.03 parts Antifoam AF. Add ultrapure water to bring the total to 100 parts. After dissolving all solutes in ultrapure water, let it stand to obtain a clear and transparent black quartz etching solution. Place the black quartz parts in the etching tank and etch them using the aforementioned black quartz etching solution. The etching temperature is set to 20℃, and the etching time is set to 60 minutes. After etching, remove the black quartz parts and rinse them thoroughly with pure water. S4. Impurity Removal: Prepare SC1 by volume (NH4OH:H2O2:H2O = 1:1:4) and immerse the etched black quartz parts at room temperature for 15 minutes. After immersion, remove the black quartz parts, rinse with pure water, and then immerse again with 2% nitric acid for 5 minutes. After immersion, remove the black quartz parts, rinse with pure water for 3 minutes, and then dry with nitrogen. S5. Pure water cleaning: The black quartz parts are cleaned in a Class 100 cleanroom using 120KHz ultrasonic waves and 18 megohm ultrapure water for 15 minutes. After cleaning, the parts are rinsed with pure water and dried with nitrogen. The black quartz parts are then placed in a 150℃ oven for 2 hours to obtain high-cleanliness black quartz parts.
[0051] Comparative Example 1 Cleaning of high-purity quartz parts The preparation of a traditional quartz etching solution includes the following steps: by volume, take 1 part of 49% hydrofluoric acid and 3 parts of ultrapure water and mix them thoroughly to obtain the traditional quartz etching solution.
[0052] The high-purity quartz parts after precision machining are cleaned using the following steps: S1. Degreasing treatment: Place the high-purity quartz parts in a degreasing tank at a temperature of 60°C. Use a commercially available degreasing solution with a pH of 9.0~10.0 for ultrasonic cleaning. The ultrasonic frequency is 40kHz and the ultrasonic oscillation cleaning time is 15 minutes. After cleaning, remove the high-purity quartz parts and rinse them with pure water and dry them with compressed air. S2. Snowflake cleaning: Place the high-purity quartz parts in the carbon dioxide snowflake cleaning machine and perform carbon dioxide snowflake cleaning on the degreased high-purity quartz parts. The pressure of the carbon dioxide snowflake cleaning machine is set to 0.4Mpa, the liquid carbon dioxide flow rate is set to 20L / min, the spray angle is 45 degrees, the distance between the spray gun nozzle and the quartz surface is 120mm, and the equipment runs for 8 minutes to complete the carbon dioxide snowflake cleaning. S3. Etching treatment: Place the high-purity quartz parts in the etching tank and use the aforementioned traditional quartz etching solution to etch the high-purity quartz parts. The etching temperature is set to 20℃ and the static etching time is set to 60min. After etching, take out the high-purity quartz parts and rinse them with pure water. S4. Impurity Removal: Prepare SC1 by volume (NH4OH:H2O2:H2O = 1:1:4) and immerse the etched high-purity quartz parts at room temperature for 15 minutes. After immersion, remove the high-purity quartz parts, rinse with pure water, and then immerse again with 2% nitric acid for 5 minutes. After immersion, remove the high-purity quartz parts, rinse with pure water for 3 minutes, and then dry with nitrogen. S5. Pure water cleaning: The high-purity quartz parts are cleaned in a Class 100 cleanroom using 120KHz ultrasonic waves and 18 megohms of ultrapure water for 15 minutes. After cleaning, the parts are rinsed with pure water and dried with nitrogen. The high-purity quartz parts are then placed in a 150℃ oven for 2 hours to obtain the cleaned high-purity quartz parts.
[0053] Comparative Example 2 Cleaning of black quartz parts Based on Comparative Example 1, the high-purity quartz parts in Comparative Example 1 were replaced with black quartz parts, and the experimental steps of Comparative Example 1 were repeated to obtain the cleaned black quartz parts.
[0054] Comparative Example 3 Cleaning of black quartz parts Based on Comparative Example 1, the high-purity quartz parts in Comparative Example 1 were replaced with black quartz parts, and step S4 was omitted. The experimental steps of Comparative Example 1 were repeated to obtain the cleaned black quartz parts. Example 3
[0055] Metal residue detection Take the cleaned black quartz parts or high-purity quartz parts from Examples 1-2 and Comparative Examples 1-3, and drop 1 mL of 5% ultrapure nitric acid onto the surface of the sample to be tested in a Class 10 PP clean bench. Take a picture, use software to obtain the contact area between the droplet and the silicon product, and after 5 minutes, aspirate the liquid and use ICPMS-MS Agilent 8900 to detect the surface metal element content. All the above operations were performed in accordance with SJ / T 11637-2016 "General Rules for Inductively Coupled Plasma Mass Spectrometry of Electronic Chemicals".
[0056] The test results of the 30 trace metal contents on the surface of black quartz in each group of samples are shown in Table 1. In Table 1, ND means not detected.
[0057] Table 1 As can be seen from the results in Table 1, the metal ion content of the black quartz surface treated with black quartz etching solution is consistent with that of the high-purity quartz surface treated with traditional quartz etching solution. Both can reach the metal ion content control level of semiconductor component surfaces. However, the metal ion content of the black quartz surface treated with traditional etching solution is very high, especially Fe and Mg, which exceed the content of Examples and Comparative Example 1 by more than 50 times. This exceeds the metal ion content control level of semiconductor component surfaces, making it unsuitable for installation and use in equipment.
[0058] As can be seen from the above results, the black quartz etching solution provided in the specific embodiments of the present invention can effectively control the release of metal ions during the cleaning process of black quartz. Black quartz treated with the black quartz etching solution can achieve the level of control of metal ions on the surface of high-purity quartz, which meets the requirements of semiconductor equipment for controlling surface contamination of metal ions on components.
[0059] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention, and they should all be covered within the scope of the claims and specification of the present invention.
Claims
1. A black quartz etching solution, characterized in that, The black quartz etching solution comprises, by weight percentage: 1.5%~4% etchant; 5%~10% stabilizer; 0.1%~0.6% metal corrosion inhibitor; 0.1%~0.3% surfactant; 0.05%~0.1% defoamer; The remainder is water.
2. The black quartz etching solution as described in claim 1, characterized in that, The etchant is selected from any one or more of ammonium fluoride, ammonium bifluoride, and electronic-grade hydrofluoric acid.
3. The black quartz etching solution as described in claim 1, characterized in that, The stabilizer is selected from any one or more of nitric acid, sulfuric acid, aminosulfonic acid, citric acid, acetic acid, tartaric acid, salicylic acid, and tannic acid.
4. The black quartz etching solution as described in claim 1, characterized in that, The metal corrosion inhibitor is selected from any one or more of thiourea, methylbenzotriazole, and hydroxyethylidene diphosphonic acid.
5. The black quartz etching solution as described in claim 1, characterized in that, The surfactant is selected from any one or more of BYK-346, polyethylene glycol, and cocamidopropyl betaine.
6. The black quartz etching solution as described in claim 1, characterized in that, The defoamer is isopropanol and / or silicone defoamer.
7. The application of the black quartz etching solution according to any one of claims 1 to 6, characterized in that, The application includes using the black quartz etching solution for cleaning black quartz materials.
8. A high-purity cleaning method for black quartz material, characterized in that, Includes the following steps: S1. Degreasing treatment: Ultrasonic degreasing treatment of black quartz material is performed using degreasing solution; S2, Snowflake Cleaning: Carbon dioxide snowflake cleaning is performed on the degreased black quartz material; S3. Etching treatment: Etching the black quartz material after snowflake cleaning using the black quartz etching solution described in any one of claims 1 to 6; S4. Impurity Removal: The etched black quartz material is treated sequentially with SC1 and dilute nitric acid. S5. Pure water cleaning: Use pure water to clean the black quartz material after impurity removal to obtain high-purity black quartz material.
9. The high-cleanliness cleaning method for black quartz material as described in claim 8, characterized in that, In step S4, by volume, SC1 comprises 1 part of 25%~28% ammonia water, 1 part of 30%~35% hydrogen peroxide solution, and 4 parts of water.
10. The high-cleanliness cleaning method for black quartz material as described in claim 8, characterized in that, In step S4, the concentration of the dilute nitric acid is 2%.