A method and system for intelligent simulation and real-time control of PVT single crystal growth
By combining digital twins and surrogate models, real-time perception and trend prediction of the PVT single crystal growth process were achieved, solving the information blind spots and lag problems of traditional control systems and improving crystal quality and production efficiency.
CN122382701APending Publication Date: 2026-07-14SHANGHAI TECHN INST OF ELECTRONICS & INFORMATION
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI TECHN INST OF ELECTRONICS & INFORMATION
- Filing Date
- 2026-04-08
- Publication Date
- 2026-07-14
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Figure CN122382701A_ABST
Abstract
The present application belongs to the technical field of semiconductor material preparation, and particularly relates to a PVT single crystal growth intelligent simulation and real-time control method and system; comprising the following steps: state sensing: collecting multi-source sensing data of a PVT growth furnace at a frequency of >10 Hz, wherein the multi-source sensing data comprises temperature, pressure, optical, weight and radio frequency data; virtual sensing: solving an inverse problem through a neural network to estimate an internal growth state that cannot be directly measured, wherein the internal growth state comprises a crystal-raw material interface position, a gas phase supersaturation and a crystal internal defect density; through real-time synchronization of a digital twin module and a physical system, traditional offline simulation is converted into online real-time twinning, the calculation speed is improved by more than 1000 times, the delay is less than 1 second, and real-time mapping of a virtual model and a physical entity is realized.
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