A wide band gap semiconductor-based universal interface construction system for SST power modules

Abstract

The application relates to the field of power electronics, and provides a universal interface construction system of an SST power module based on a wide-bandgap semiconductor, which comprises a core control unit and the following interfaces electrically connected with the core control unit and coordinated by the core control unit to realize signal interaction and work control: a unified electrical interface used for connecting the power module and an external circuit, comprising standardized power terminals and standardized control signal terminals; an adaptive gate drive and protection interface used for driving and protecting the wide-bandgap semiconductor power module, supporting configurable drive parameters and integrated protection; a signal integrity optimization structure used for guaranteeing high-frequency operation stability, comprising a low parasitic inductance power loop and isolation between the power loop and the control loop; and standardized mechanical and heat dissipation interfaces used for module installation and heat dissipation, comprising a unified installation structure and standardized heat dissipation interfaces. The interfaces form an organic whole under the coordination and regulation of the core control unit, and promote the performance improvement, cost optimization and industrialization process of the SST.

Description

Technical Field

[0001] This invention relates to the field of power electronics technology, specifically to a universal interface construction system for SST power modules based on wide bandgap semiconductors. Background Technology

[0002] Solid-state transformers (SSTs) are key components of future smart grids, with high-frequency power electronic converters at their core. With the rapid development of wide-bandgap semiconductor (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) HEMTs, the operating frequency and efficiency of SSTs have been significantly improved. However, existing SST power modules still face many challenges in design and application, especially in the integration of wide-bandgap semiconductor devices, mainly in the following aspects: Currently, various wide-bandgap semiconductor power modules exist on the market. Modules from different manufacturers and with different packaging forms (such as discrete devices, half-bridge modules, and full-bridge modules) have inconsistent electrical interfaces (such as power terminals and control signal terminals), mechanical dimensions, and heat dissipation interfaces. This necessitates customized designs for specific power modules by SST, increasing design complexity and cost. If a change of supplier is required, the entire SST hardware platform may need to be redesigned, severely limiting SST's interchangeability and scalability.

[0003] Wide bandgap semiconductor devices offer advantages such as high switching speed, low on-resistance, and high voltage withstand capability, but they also place higher demands on gate drive circuits. Different models and manufacturers of SiC MOSFETs or GaN HEMTs exhibit variations in optimal gate drive voltage, current, rise / fall rate, short-circuit protection, and over-temperature protection parameters. Existing SST power module drive circuits are often custom-designed for specific devices, making them incompatible with other wide bandgap devices. This poor compatibility limits SST device selection and increases the complexity and risk of drive circuit design.

[0004] The high switching speeds (dV / dt and di / dt) of wide-bandgap semiconductor devices bring serious electromagnetic interference (EMI) problems and signal integrity challenges. Within SST power modules, control signals such as drive signals and sampling signals are susceptible to interference from high-frequency switching noise in the power circuit, leading to signal distortion, false triggering, and even control failure. Simultaneously, parasitic inductance and capacitance in the power circuit can cause oscillations and overshoots at high frequencies, affecting device reliability and efficiency. Existing power module interface designs often fail to adequately consider signal integrity issues under high-frequency, high-speed operation, causing bottlenecks in the development of SST towards higher frequency and higher power density.

[0005] The heat dissipation performance of power modules directly affects the power density and reliability of SSTs. Although wide-bandgap semiconductor devices have lower losses, efficient heat dissipation solutions are still required for high-power-density applications. However, different power modules vary in the size of their heat sink substrates, mounting holes, thermal resistance characteristics, and connection methods to heat sinks (such as liquid cooling plates and air-cooled heat sinks). This inconsistency increases the complexity of the mechanical and heat dissipation system design of SSTs, and also makes SST maintenance and replacement difficult.

[0006] In summary, the existing SST power modules have problems in terms of interface universality, driver compatibility, signal integrity, and heat dissipation mechanical interfaces, which seriously restrict the performance improvement, cost optimization, and industrialization process of SST. Summary of the Invention

[0007] In view of the above-mentioned shortcomings of the existing technology, the present invention provides a universal interface construction system for SST power modules based on wide bandgap semiconductors.

[0008] To achieve the above objectives, the present invention provides the following technical solution: A universal interface construction system for SST power modules based on wide bandgap semiconductors is provided, including a core control unit and a component electrically connected to the core control unit, which coordinates signal interaction and operation control. A unified electrical interface is established to enable bidirectional transmission of sampling and control signals with the core control unit, which is used to connect the power module to external circuits, including standardized power terminals and standardized control signal terminals; An adaptive gate drive and protection interface establishes a bidirectional transmission connection with the core control unit for drive parameter configuration commands, PWM drive signals, and fault feedback signals. It is used to drive and protect wide bandgap semiconductor power modules and supports configurable drive parameters and integrated protection. The signal integrity optimization structure is connected to the unified electrical interface and the adaptive gate drive and protection interface and is controlled by the core control unit to ensure high-frequency operation stability, including a low parasitic inductance power circuit and isolation between the power circuit and the control circuit; Standardized mechanical and heat dissipation interfaces are established to create a bidirectional transmission connection with the core control unit for heat dissipation status data feedback and heat dissipation control commands. This connection is used for module installation and heat dissipation, and includes a unified installation structure and standardized heat dissipation interfaces.

[0009] In some embodiments, the unified electrical interface further includes a signal isolation unit and a filtering unit, which are connected in series on the signal transmission path between the unified electrical interface and the core control unit to achieve electrical isolation of control signals and suppression of high-frequency noise, ensuring the integrity of the transmission of sampling signals and control signals to the core control unit.

[0010] In some embodiments, the standardized control signal terminals adopt a unified pin assignment, including gate drive, auxiliary power supply, sampling signal, fault indication and communication interface. The communication interface is matched with the communication module of the core control unit to realize electrical interchangeability between different power modules and the core control unit.

[0011] In some embodiments, the adaptive gate drive and protection interface enables remote configuration of drive voltage, gate resistance and dead time through the parameter configuration port of the core control unit to be compatible with different types of wide bandgap semiconductor devices, and is connected to the PWM signal output terminal of the core control unit to receive the PWM drive signal sent by the core control unit.

[0012] In some embodiments, the adaptive gate drive and protection interface further includes an isolation fault feedback unit, which is connected to the fault monitoring port of the core control unit and is used to transmit fault signals to the core control unit in isolation.

[0013] In some embodiments, the integrated protection of the adaptive gate drive and protection interface includes overcurrent, overvoltage, undervoltage, and overtemperature protection. The protection threshold can be configured by the core control unit. After protection is triggered, a fault signal is immediately fed back to the core control unit, and the protection command issued by the core control unit is executed.

[0014] In some embodiments, the signal integrity optimization structure further includes a standardized grounding structure, which is connected to the grounding terminals of the power loop, the control loop, and the core control unit, respectively, to suppress ground loops and common-mode interference.

[0015] In some embodiments, the signal integrity optimization structure further includes a high-frequency decoupling unit, which is disposed adjacent to the wide bandgap semiconductor device and connected to the signal control port of the core control unit. The high-frequency decoupling unit is used to absorb high-frequency switching noise and cooperate with the core control unit to ensure signal transmission stability.

[0016] In some embodiments, a module information and health management interface is also included, which establishes a bidirectional transmission connection with the core control unit for module information reading, health status data feedback, and firmware upgrade command transmission. The module information and health management interface is used to realize the identification of power modules, real-time monitoring of operating status, and remote firmware upgrade.

[0017] A solid-state transformer is provided, including the SST power module universal interface construction system based on wide bandgap semiconductors as described in any of the above embodiments.

[0018] Compared with existing technologies, the beneficial effects of this invention are as follows: By standardizing the power terminals and control signal terminals of the unified electrical interface, the interface specifications of wide-bandgap semiconductor power modules from various manufacturers and in various package forms are unified, eliminating the need for customized design for specific modules. This reduces the complexity and cost of SST design, enables plug-and-play functionality, improves interchangeability and scalability, and avoids redesigning the hardware platform when replacing modules. The configurable drive parameters of the adaptive gate drive and protection interface can flexibly match the drive requirements of different models and manufacturers of SiC MOSFETs and GaN HEMTs. Combined with integrated protection functions, it effectively avoids the risk of device damage, solves the problem of poor drive compatibility, and reduces the complexity and risk of drive circuit design. The low parasitic inductance power loop and the power and control loop isolation design of the signal integrity optimized structure can suppress high-frequency switching noise interference, reduce signal distortion and false triggering, reduce power loop oscillation and overshoot, and ensure the stability, device reliability, and efficiency of SST high-frequency, high-power-density operation. The unified mounting structure and standardized heat dissipation interface of the standardized mechanical and heat dissipation interfaces simplify the design of the SST mechanical and heat dissipation system and improve the convenience of module installation, maintenance, and replacement. Under the coordinated control of the core control unit, all interfaces form an organic whole, comprehensively promoting the performance improvement, cost optimization and industrialization of SST, and completely breaking through the existing technical bottlenecks. Attached Figure Description

[0019] Figure 1 This is a block diagram of the overall architecture of the SST power module universal interface construction system based on wide bandgap semiconductors according to the present invention; Figure 2 This is a schematic diagram illustrating the interaction logic and workflow of the core control unit, interfaces, and external circuits of the SST power module universal interface construction system based on wide bandgap semiconductors according to the present invention. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. The described embodiments are some, but not all, of the embodiments of the present invention.

[0021] Therefore, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0022] like Figure 1 and Figure 2 As shown, this invention provides a universal interface construction system for SST power modules based on wide bandgap semiconductors, specifically including the following: The universal interface construction system for SST power modules based on wide bandgap semiconductors of the present invention takes a core control unit as the central hub. Each interface establishes a bidirectional electrical connection with the core control unit through standardized communication ports such as SPI, CAN, or LVDS. Signal linkage between each interface is achieved through the core control unit. The specific collaborative working principle is as follows: The interaction between the unified electrical interface and the core control unit: the power signals of the external circuit and the power module are transmitted through standardized power terminals. The control signals, current / voltage / temperature and other sampling signals are collected through standardized control signal terminals, and then isolated and noise suppressed by the signal isolation unit and the filtering unit in sequence before being stably transmitted to the signal acquisition port of the core control unit. The core control unit sends control commands to the power module through the standardized control signal terminals according to the system requirements, realizing bidirectional signal interaction.

[0023] Interaction between the adaptive gate drive and protection interface and the core control unit: Based on the sampling signal transmitted through the unified electrical interface, the core control unit sends configuration commands for drive voltage, gate resistance, and dead time to the adaptive gate drive and protection interface through the parameter configuration port, and simultaneously sends a standardized PWM drive signal through the PWM signal output terminal; When the integrated protection function of the adaptive gate drive and protection interface detects a fault, it transmits the fault signal to the fault monitoring port of the core control unit through the isolated fault feedback unit. The core control unit then immediately issues protection commands such as soft shutdown and derating operation to achieve closed-loop control of drive and protection.

[0024] Interaction between standardized mechanical and heat dissipation interfaces and the core control unit: The temperature sensor and thermal resistance detection module of the standardized mechanical and heat dissipation interfaces feed back data such as the temperature of the heat sink substrate and the operating status of the heat dissipation system to the status monitoring port of the core control unit in real time; Based on the feedback data, the core control unit issues instructions such as heat dissipation power adjustment and coolant flow control to the execution module of the heat dissipation system to achieve dynamic control of the heat dissipation status and ensure that the power module operates within a safe temperature range.

[0025] Interaction between the module information and health management interface and the core control unit: The core control unit reads information such as the module's unique ID, rated parameters, and firmware version from the non-volatile memory of the module information and health management interface through the information reading port, and automatically matches the preset drive parameters and protection thresholds; at the same time, the module information and health management interface uploads the real-time collected power module operating data to the core control unit, and the core control unit performs health status assessment and fault diagnosis through data analysis; when a firmware upgrade is required, the core control unit sends a firmware upgrade command to the module information and health management interface through the communication interface to achieve remote contactless upgrade.

[0026] Coordinated regulation of the signal integrity optimization structure: The low parasitic inductance power loop, the isolation between the power loop and the control loop, the standardized grounding structure, and the high-frequency decoupling unit of the signal integrity optimization structure are connected to the signal transmission paths of the unified electrical interface, the adaptive gate drive and the protection interface, respectively. All of them are uniformly regulated by the signal regulation port of the core control unit. With the cooperation of the core control unit, high-frequency noise is suppressed and signal distortion is reduced at the hardware level, ensuring the signal transmission integrity between each interface and the core control unit, and adapting to the high-frequency and high-power-density operation requirements of SST.

[0027] Under the unified coordination of the core control unit, all interfaces achieve full-process linkage of sampling, driving, protection, heat dissipation, and monitoring. There is no need for customized design for specific power modules, truly realizing the "plug and play" of the modules. This comprehensively solves the technical problems of poor interface universality, low drive compatibility, insufficient signal integrity, and inconsistent heat dissipation mechanical interfaces of existing SST power modules.

[0028] The following details the specifics of each structure: Unified electrical interface: This is used to connect the power module to external circuits, and includes standardized power terminals, standardized control signal terminals, signal isolation units, and filtering units. The specific details of each part are shown below: 1. Standardized Power Terminals: A unified layout and size standard for power terminals are adopted. For example, DC bus input terminals and AC output terminals (or intermediate frequency AC terminals) use high current density, low parasitic inductance multilayer busbar connectors or bolt connections. This optimizes the terminal spacing and arrangement, reduces stray inductance and parasitic capacitance, and meets high-voltage insulation requirements.

[0029] 2. Standardized Control Signal Terminals: Employs a standardized low-voltage control signal connector, such as a multi-pin header or flat cable connector. This connector defines a standard pin assignment, including: (1) Gate drive signal: Provides isolated PWM signal input and supports differential signal transmission to enhance anti-interference capability.

[0030] (2) Auxiliary power supply: Provides a standardized isolated auxiliary power input (such as +15V / -5V) for powering the drive circuit and sensors.

[0031] (3) Current / Voltage Sampling Signal: Provides standardized analog or digital sampling signal output interfaces for feedback of parameters such as current, voltage, and temperature. Analog signals use differential transmission, while digital signals use isolated bus interfaces such as SPI, I2C, or CAN.

[0032] (4) Fault / Status Indication: Provides standardized fault alarm signal output and module status indication signal output.

[0033] (5) Communication interface: Reserve a standardized digital communication interface (such as UART, SPI, CAN or Ethernet) for communication between modules or with the core control unit.

[0034] 3. Signal Isolation and Filtering Units: All control signal inputs / outputs are electrically isolated using optocouplers or digital isolators, and the isolation voltage level meets the SST high-voltage side requirements. Common-mode and differential-mode filters are installed at the signal input terminals to suppress high-frequency switching noise interference and ensure signal integrity.

[0035] Adaptive gate drive and protection interface: This interface drives and protects wide-bandgap semiconductor power modules, supporting configurable drive parameters and integrated protection to ensure compatibility with the characteristics of different wide-bandgap semiconductor devices. Details of each part are as follows: 1. Configurable Gate Drive Parameters: The gate drive circuit interface supports configuration of the gate drive voltage (such as +15V / -4V or +20V / -5V for SiC MOSFETs), gate resistance (for adjusting switching speed), and dead time via software or hardware jumpers. These parameters can be remotely configured and optimized through the SST core control unit.

[0036] 2. Universal drive signal interface: The drive signal input interface adopts a standardized PWM signal format and supports programmable rising / falling edge control to adapt to the optimal switching speed requirements of different WBG devices.

[0037] 3. Integrated Protection Functions: The power module integrates overcurrent, overvoltage, undervoltage, and overtemperature protection functions. Protection thresholds are configurable and report to the SST core control unit via a standardized fault signal interface. For example, desaturation detection is used to achieve fast overcurrent protection and provides soft shutdown functionality.

[0038] 4. Isolation Fault Feedback Unit (Isolation Fault Feedback): Fault signals are fed back to the SST core control unit through high-speed optocouplers or digital isolators to ensure electrical isolation between the control circuit and the power circuit and prevent fault propagation.

[0039] Signal integrity optimization structure: This structure ensures high-frequency operational stability and includes a low parasitic inductance power circuit, isolation between the power circuit and the control circuit, a standardized grounding structure, and a high-frequency decoupling unit. It optimizes the physical layout and PCB design of the power module interfaces to ensure signal integrity under high-frequency, high-speed operation. The specific components are shown below: 1. Low parasitic inductance power loop: The power loop employs a multilayer busbar or wide copper foil design to minimize parasitic inductance. Furthermore, the DC bus capacitor is placed close to the WBG device to form a minimal power loop and suppress voltage spikes.

[0040] 2. Power loop and control loop are isolated (control signals and power loops are separated): Control signal traces and power loop traces are physically isolated on the PCB, and further isolated using a ground plane or shielding layer to reduce electromagnetic coupling interference. Critical signal lines use differential traces and maintain equal length matching to improve common-mode interference immunity.

[0041] 3. Standardized grounding structure (common ground design optimization): Single-point grounding or star grounding is adopted to avoid ground loops and reduce common-mode noise. The control ground and power ground are connected through isolation.

[0042] 4. High-frequency decoupling unit: High-frequency decoupling capacitors are placed near the power supply pins of the driver chip and WBG device to provide a low-impedance path and absorb high-frequency noise.

[0043] Standardized mechanical and thermal interfaces: These are used for module installation and heat dissipation, including a unified installation structure, standardized thermal interfaces, and modular packaging. Standardized mechanical and thermal interfaces are designed to facilitate the installation and maintenance of power modules. The specific components are shown below: 1. Standardized installation structure (standardized dimensions and mounting holes): The external dimensions and mounting holes (such as bolt holes) of the power modules conform to predefined industry standards or the modular dimension specifications within the SST system to ensure that modules from different manufacturers can be installed interchangeably.

[0044] 2. Standardized Heat Dissipation Interface: The heat dissipation substrate uses a uniform size and material (such as Si3N4 ceramic substrate or AlN ceramic substrate) and provides a standardized thermal interface. For liquid cooling modules, standardized quick-connect fittings for coolant inlets and outlets are provided to ensure seamless connection with the SST liquid cooling system. Furthermore, a low thermal resistance thermal interface material is used between the heat dissipation substrate and the heat sink.

[0045] 3. Modular Packaging: The power module adopts a robust and compact packaging form, with good dustproof, moisture-proof and shockproof performance, meeting the requirements of industrial application environments. In addition, the package housing has reserved areas for identifying the module type, rated parameters and manufacturer information.

[0046] The module information and health management interface is used to realize module identification, status monitoring, and firmware upgrades. The specific parts are shown below: 1. Module ID and Parameter Storage: Each power module integrates a non-volatile memory (such as EEPROM) to store the module's unique ID, manufacturer information, model number, rated parameters, production date, firmware version, and calibration data. This information can be read by the SST core control unit via the communication interface.

[0047] 2. Health Status Monitoring: The module integrates temperature and current sensors to monitor key operating parameters in real time. This data is uploaded to the SST core control unit via a communication interface for health status assessment, fault diagnosis, and predictive maintenance.

[0048] 3. Remote firmware upgrade: The power module supports remote firmware upgrades via the communication interface, facilitating module function updates and defect repairs.

[0049] It is worth noting that the present invention has the following outstanding advantages compared with the prior art: 1. Significantly Improved Module Versatility and Interchangeability: Through unified electrical, mechanical, and thermal interface standards, this invention enables plug-and-play wide-bandgap semiconductor power modules from different manufacturers and in different package types. This greatly simplifies SST's design and manufacturing process, reduces dependence on specific suppliers, and improves module interchangeability, thereby reducing SST's overall cost and supply chain risks.

[0050] 2. Enhanced compatibility of drive and protection circuits: The adaptive gate drive and protection interface allows for matching the drive characteristics and protection requirements of different wide-bandgap semiconductor devices through software or hardware configuration. This enables the SST system to flexibly select and upgrade power devices without redesigning the drive circuit, accelerating the application of new devices and reducing the difficulty of drive circuit development and debugging.

[0051] 3. Optimized signal integrity under high-frequency and high-speed operation: Optimized design of interface layout, signal isolation, and anti-interference technology effectively suppresses the interference of high-frequency switching noise on control signals. This ensures the accuracy of drive signals and the reliability of sampling signals, thereby improving the efficiency, stability, and power quality of SST under high-frequency operation and extending device lifespan.

[0052] 4. Simplified Heat Dissipation and Mechanical Installation: Standardized heat sink dimensions, mounting holes, and coolant interfaces (for liquid cooling scenarios) allow power modules to seamlessly integrate with SST's heat dissipation system and mechanical structure. This simplifies SST's overall design, shortens the development cycle, and facilitates module installation, maintenance, and replacement.

[0053] 5. Enhanced scalability and upgradeability of SST: The universal interface design allows for easy upgrades and expansion of power modules in the SST system. When higher-performance, wider-bandgap devices become available, only the power modules need to be replaced, eliminating the need for large-scale modifications to the entire SST system. This extends the lifespan of the SST system and protects initial investments.

[0054] 6. Enhanced System Reliability and Intelligence: Integrated fault protection functions and module health management interfaces enable the SST core control unit to monitor the operating status of power modules in real time, performing fault diagnosis and predictive maintenance. This significantly improves the reliability of the SST system and provides a data foundation for achieving a higher level of intelligent management.

[0055] In summary, this invention provides a high-performance, highly reliable, easy-to-design, manufacture, and maintain core component solution for SST based on a wide-bandgap semiconductor SST power module universal interface design, which strongly promotes the widespread application of SST technology in future smart grids and the energy internet.

[0056] The following examples are based on specific embodiments: Example 1 Reference Figure 1 The following is a system for building a general interface for SST power modules based on wide-bandgap semiconductors: A unified electrical interface is implemented as follows: 1. Standardized Power Terminals: Utilizes customized high-current-density multilayer busbar connectors. Both DC bus input terminals (DC+, DC-) and intermediate frequency AC output terminals (AC_H, AC_L) employ copper multilayer busbars, connected to external circuits via bolts. The busbar spacing is 10mm, and the surface is silver-plated to reduce contact resistance and parasitic inductance. Interlayer insulation of the busbars uses polyimide film with an insulation withstand voltage of up to 4kV.

[0057] 2. Standardized control signal terminals: Employs a standardized 60-pin high-density connector (e.g., Mole). (Micro-Fit 3.0 series). The pin assignments have been optimized, grouping analog signals, digital signals, and auxiliary power signals, and providing ground shielding. The specific pin assignments are as follows: (1) Gate drive signals: 12 pins for 6 pairs of differential PWM signal inputs (each pair includes PWM+ and PWM-), supporting a switching frequency of up to 2MHz. The signal level is 3.3V LVDS.

[0058] (2) Auxiliary power supply: 4 pins provide isolated +15V / -5V power input for powering drive circuits and sensors.

[0059] (3) Current / voltage sampling signals: 8 pins for 4 pairs of differential analog signal inputs (e.g., DC bus voltage, DC bus current, AC side current), with a signal range of ±5V. There are also 4 pins for digital sampling signals (e.g., current / voltage data transmitted via an isolated SPI interface).

[0060] (4) Fault / Status Indication: 4 pins are used to output fault signals such as overcurrent, overvoltage, and overtemperature, as well as module operating status signals (such as Ready, Fault, and Warning).

[0061] (5) Communication interface: 4 pins for isolating CAN bus communication (CAN_H, CAN_L, GND, VCC), or reserved for isolating Ethernet communication.

[0062] 3. Signal Isolation and Filtering Units: All control signal inputs / outputs are electrically isolated via high-speed digital isolators (e.g., ADI ADuM series) with an isolation voltage rating of 5kVrms. Common-mode chokes and RC filters are installed at the control signal connector inputs to filter out high-frequency noise. An LC filter is installed at the auxiliary power input to ensure the purity of the power supply to the drive circuit.

[0063] The adaptive gate drive and protection interface is implemented as follows: 1. Configurable Gate Drive Parameters: The gate drive chip (e.g., TI UCC21540 or Analog Devices ADuM4135) enables software configuration of the gate drive voltage and gate resistance via an external programmable resistor network and / or digital potentiometer. The SST core control unit sends configuration commands to the driver chip via the SPI interface, allowing the gate drive voltage to be set to +15V / -4V or +20V / -5V, and the gate resistance to be adjusted in steps from 1Ω to 10Ω. Furthermore, the driver chip supports programmable dead time settings, ranging from 50ns to 500ns.

[0064] 2. General-purpose drive signal interface: The drive signal input terminal receives LVDS differential PWM signals from the SST core control unit. The driver chip integrates signal shaping and level conversion functions to ensure that the PWM signal can accurately drive SiCMOSFETs or GaN HEMTs.

[0065] 3. Integrated protection functions: The power module integrates the following protection functions: (1) Overcurrent protection: Desaturation detection technology is adopted to quickly detect overcurrent when a short circuit occurs by monitoring the Vds voltage of the WBG device. The detection threshold is configurable and the response time is less than 200ns. Once an overcurrent is detected, the driver chip will trigger a soft shutdown to turn off the WBG device in a controlled manner to avoid damage to the device.

[0066] (2) Overvoltage protection: The DC bus voltage is monitored by a voltage sensor. When the voltage exceeds the preset threshold, the protection mechanism is triggered, such as shutting down the WBG device or starting the energy discharge circuit.

[0067] (3) Undervoltage protection: Monitor the auxiliary power supply voltage of the driver chip. When the voltage is lower than the threshold, the drive signal output is prohibited to prevent the WBG device from working when the gate voltage is insufficient.

[0068] (4) Over-temperature protection: The power module integrates an NTC thermistor to monitor the module temperature in real time. When the temperature exceeds the preset threshold, protection is triggered, such as derating or shutting down.

[0069] 4. Isolation Fault Feedback Unit: After all protection functions are triggered, the fault signal (such as the FLT pin) is isolated and fed back to the SST core control unit through a high-speed optocoupler. At the same time, the LED indicator inside the driver chip will light up, which is convenient for on-site diagnosis.

[0070] The signal integrity optimization structure incorporates the following optimizations in the PCB design of the power module: 1. Low parasitic inductance power loop: The power loop adopts a multi-layer PCB design, with wide copper foil traces for the DC bus and AC output, and the trace length is minimized. The DC bus capacitor (such as the CDE 947C series film capacitor) is placed close to the SiC MOSFET or GaN HEMT to form a minimal power loop with a parasitic inductance of less than 5nH.

[0071] 2. Power and control circuits are isolated: Power and control signal circuits are located in different areas of the PCB and isolated by a ground plane. Critical control signals (such as PWM input and sampling feedback) use differential traces, ensuring equal length matching of differential pairs to improve common-mode noise rejection ratio. The width and spacing of signal traces are impedance matched to ensure signal transmission integrity.

[0072] 3. Standardized grounding structure: A star grounding method is adopted, which combines the power ground and control ground at a single point and isolates them through a ferrite bead or common-mode choke to avoid ground loop noise. The decoupling capacitor of the driver chip is placed close to the chip pins to provide a low-impedance high-frequency current path.

[0073] 4. High-frequency decoupling unit: Multiple high-frequency ceramic capacitors (such as 100nF, 10nF, 1nF) are connected in parallel near the DC bus terminal of each WBG device to provide a wide-bandwidth, low-impedance decoupling path and absorb high-frequency switching noise.

[0074] The standardized mechanical and heat dissipation interfaces are as follows: 1. Standardized installation structure: The power module adopts a standardized half-bridge module package size (e.g., 100mm). 60mm (20mm), mounting holes conform to JEDEC standards. The module housing is made of high-strength engineering plastic and internally potted with thermally conductive epoxy resin, providing excellent dustproof, moisture-proof, and shockproof performance.

[0075] 2. Standardized Heat Dissipation Interface: The bottom of the module uses a Si3N4 ceramic substrate, which has excellent thermal conductivity and insulation properties. The substrate surface has high flatness and low roughness to ensure good contact with external heat sinks (such as liquid cooling plates). For liquid-cooled modules, two standardized G1 / 8 threaded quick connectors are provided for coolant inlet and outlet. The thermal resistance is designed to be 0.1 K / W.

[0076] 3. Modular Packaging: Each power module integrates an EEPROM chip, storing the module's unique serial number, manufacturer information, model number, rated parameters, production date, firmware version, and calibration data. This information can be read by the SST core control unit via the CAN bus interface for module identification, health status monitoring, and traceability.

[0077] Module Information and Health Management Interface: The module integrates multiple NTC thermistors to monitor the junction temperature of the SiC MOSFET chip, the temperature of the heat sink substrate, and the module casing temperature. This temperature data is uploaded in real-time to the SST core control unit via an isolated SPI interface or CAN bus for over-temperature protection and predictive maintenance. In addition, the module can also monitor the health status of the driver chip and the auxiliary power supply voltage.

[0078] Example 2 A solid-state transformer (SST) includes the universal interface construction system for SST power modules based on wide bandgap semiconductors as described in Embodiment 1, and further includes a rectifier module, a high-frequency inverter module, a high-frequency transformer, a filter module, a core control unit, and a heat dissipation system. The high-frequency inverter module adopts at least one wide bandgap semiconductor power module. The wide bandgap semiconductor power module achieves electrical connection, mechanical installation, heat dissipation docking, and signal interaction with other components of the SST through the universal interface construction system of the present invention, forming a complete solid-state transformer operating system.

[0079] Specifically, the wide-bandgap semiconductor power module connects to the output of the rectifier module and the input of the high-frequency transformer through standardized power terminals in its unified electrical interface. Standardized control signal terminals communicate with the SST core control unit via differential PWM signals, sampling signals, and fault indication signals. Signal isolation and filtering units ensure no interference between control and power signals, guaranteeing signal transmission stability. An adaptive gate drive and protection interface connects to the SST core control unit. The core control unit configures parameters such as gate drive voltage and gate resistance via software to adapt to different types of SiC MOSFETs or GaN HEMT devices in the high-frequency inverter module. Integrated overcurrent, overvoltage, and overtemperature protection functions can respond in real time to abnormal device conditions and send fault signals to the core control unit through an isolated fault feedback unit, ensuring the safe operation of the solid-state transformer.

[0080] The signal integrity optimization structure suppresses electromagnetic interference and signal distortion generated during high-frequency inversion through a low parasitic inductance power circuit, isolation between the power circuit and the control circuit, a standardized grounding structure, and a high-frequency decoupling unit. This ensures the transmission accuracy of drive signals and sampling signals and adapts to the high-frequency and high-power density operation requirements of solid-state transformers. In the standardized mechanical and heat dissipation interface, the wide-bandgap semiconductor power module is fixed on the SST mounting bracket through a unified mounting hole. The standardized heat dissipation interface is seamlessly connected to the SST liquid cooling system. The Si3N4 ceramic substrate inside the power module conducts the heat from the chip to the standardized metal heat sink, and then the low thermal resistance interface material is seamlessly bonded to the SST liquid cooling plate to achieve efficient heat dissipation and ensure stable operation of the power module under high-frequency and high-power conditions.

[0081] Furthermore, the power module's module information and health management interface communicate with the SST core control unit via a CAN bus. The core control unit can read the module's unique ID, rated parameters, and other information to achieve accurate module identification and parameter matching. Simultaneously, it receives real-time operating data such as temperature and current uploaded by the module for health status assessment, fault diagnosis, and predictive maintenance. Furthermore, the core control unit writes firmware upgrade commands through the module information and health management interface to remotely update the power module's functions without disassembling the module, significantly improving SST's operational efficiency. When upgrading the power module or replacing it with a module from a different manufacturer, the core control unit reads the new module's unique ID and automatically matches the preset drive parameters and protection thresholds. No manual debugging or modification of the SST core control unit, cooling system, mounting brackets, or other components is required; only the power module needs to be replaced. "Plug and play" functionality is achieved through a universal interface, significantly improving the maintainability and scalability of the solid-state transformer.

[0082] The solid-state transformer in this embodiment can be applied to scenarios such as smart grids, new energy grid connection, rail transit power supply, and distributed energy. By constructing a system through the universal interface of this invention, the problems of poor interchangeability of existing solid-state transformer power modules, low drive compatibility, large high-frequency signal interference, and inconvenient maintenance are solved. It effectively improves the operational reliability, power density, and intelligence level of solid-state transformers, and reduces design, manufacturing, and maintenance costs.

[0083] As can be seen, the universal interface construction system for SST power modules based on wide-bandgap semiconductors includes a unified electrical interface, an adaptive gate drive and protection interface, a signal integrity optimized structure, and standardized mechanical and thermal interfaces. The unified electrical interface standardizes power terminals and control signal terminals, and employs isolation and filtering technologies. The adaptive gate drive and protection interface supports configurable gate drive parameters and integrated protection functions. The signal integrity optimized structure ensures signal integrity under high-frequency and high-speed operation through low parasitic inductance and separation of control signals from power loops. The standardized mechanical and thermal interfaces unify module size, mounting holes, and thermal connections. This system effectively addresses the problems of lack of universality, poor driver compatibility, signal integrity challenges, and inconsistent thermal mechanical interfaces in existing SST power module interfaces, thereby improving the interchangeability, scalability, performance, and reliability of SST. In this invention, each interface and the core control unit establish a bidirectional electrical connection through a standardized communication port. The core control unit acts as the system's central hub, enabling unified coordination and control of each interface: the unified electrical interface transmits sampling signals to the core control unit, which then issues drive parameter configuration commands and PWM drive signals to the adaptive gate drive and protection interface based on the sampling signals; the standardized mechanical and heat dissipation interface feeds back heat dissipation status data to the core control unit, which then issues heat dissipation control commands based on the data; and the module information and health management interface uploads module information and health status data to the core control unit and receives firmware upgrade commands from the core control unit. Under the control of the core control unit, each interface works collaboratively to achieve universal and intelligent control of the SST power module.

[0084] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0085] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this invention is in use. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention. In addition, the terms "first," "second," "third," etc., are only used to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0086] Furthermore, terms such as "horizontal," "vertical," and "sag" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal relative to "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0087] In this invention, unless otherwise expressly specified and limited, "above or below" a first feature may include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on" the first feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the first feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0088] Although the description of the invention has been given in conjunction with the specific embodiments described above, it will be apparent to those skilled in the art that many substitutions, modifications, and variations can be made based on the foregoing. Therefore, all such substitutions, modifications, and variations are included within the spirit and scope of the appended claims.

Claims

1. A universal interface construction system for SST power modules based on wide bandgap semiconductors, characterized in that, Includes a core control unit, and components electrically connected to the core control unit, which coordinate signal interaction and operational control via the core control unit: A unified electrical interface is established to enable bidirectional transmission of sampling and control signals with the core control unit, which is used to connect the power module to external circuits, including standardized power terminals and standardized control signal terminals; An adaptive gate drive and protection interface establishes a bidirectional transmission connection with the core control unit for drive parameter configuration commands, PWM drive signals, and fault feedback signals. It is used to drive and protect wide bandgap semiconductor power modules and supports configurable drive parameters and integrated protection. The signal integrity optimization structure is connected to the unified electrical interface and the adaptive gate drive and protection interface and is controlled by the core control unit to ensure high-frequency operation stability, including a low parasitic inductance power circuit and isolation between the power circuit and the control circuit; Standardized mechanical and heat dissipation interfaces are established to create a bidirectional transmission connection with the core control unit for heat dissipation status data feedback and heat dissipation control commands. This connection is used for module installation and heat dissipation, and includes a unified installation structure and standardized heat dissipation interfaces.

2. The SST power module universal interface construction system based on wide bandgap semiconductors according to claim 1, characterized in that, The unified electrical interface also includes a signal isolation unit and a filtering unit. The signal isolation unit and the filtering unit are connected in series on the signal transmission path between the unified electrical interface and the core control unit to achieve electrical isolation of control signals and suppression of high-frequency noise, and to ensure the integrity of the transmission of sampling signals and control signals to the core control unit.

3. The SST power module universal interface construction system based on wide bandgap semiconductors according to claim 2, characterized in that, The standardized control signal terminals adopt a unified pin allocation and include gate drive, auxiliary power supply, sampling signal, fault indication and communication interface. The communication interface is matched with the communication module of the core control unit to realize the electrical interchangeability between different power modules and the core control unit.

4. The SST power module universal interface construction system based on wide bandgap semiconductors according to claim 1, characterized in that, The adaptive gate drive and protection interface enables remote configuration of drive voltage, gate resistance, and dead time through the parameter configuration port of the core control unit to be compatible with different types of wide bandgap semiconductor devices. It is also connected to the PWM signal output terminal of the core control unit to receive the PWM drive signal sent by the core control unit.

5. The SST power module universal interface construction system based on wide bandgap semiconductor according to claim 4, characterized in that, The adaptive gate drive and protection interface also includes an isolation fault feedback unit, which is connected to the fault monitoring port of the core control unit and is used to isolate and transmit fault signals to the core control unit.

6. The SST power module universal interface construction system based on wide bandgap semiconductor according to claim 4, characterized in that, The integrated protection of the adaptive gate drive and protection interface includes overcurrent, overvoltage, undervoltage, and overtemperature protection. The protection threshold can be configured by the core control unit. After protection is triggered, a fault signal is immediately fed back to the core control unit, and the protection command issued by the core control unit is executed.

7. The SST power module universal interface construction system based on wide bandgap semiconductor according to claim 1, characterized in that, The signal integrity optimization structure also includes a standardized grounding structure, which is connected to the grounding terminals of the power loop, the control loop, and the core control unit, respectively, to suppress ground loops and common-mode interference.

8. The SST power module universal interface construction system based on wide bandgap semiconductor according to claim 7, characterized in that, The signal integrity optimization structure also includes a high-frequency decoupling unit, which is located adjacent to the wide bandgap semiconductor device and connected to the signal control port of the core control unit. It is used to absorb high-frequency switching noise and work with the core control unit to ensure signal transmission stability.

9. The SST power module universal interface construction system based on wide bandgap semiconductor according to claim 1, characterized in that, It also includes a module information and health management interface that establishes a bidirectional transmission connection with the core control unit for module information reading, health status data feedback, and firmware upgrade command transmission. The module information and health management interface is used to realize the identification of power modules, real-time monitoring of operating status, and remote firmware upgrade.

10. A solid-state transformer, characterized in that, The system includes the SST power module universal interface construction system based on wide bandgap semiconductors as described in any one of claims 1 to 9.

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