A method and device for quantifying the evolution of screw dislocation morphology

Abstract

The present application relates to the technical field of material microstructure characterization, and particularly relates to a quantitative method and device for spiral dislocation morphology evolution. The method obtains a transmission electron microscope image containing a target spiral dislocation, extracts a dislocation projection center line and establishes an arc length coordinate, constructs a spiral dislocation morphology development degree index based on a projection contour length, an orientation change, a projection curvature and a spiral tightness determined by a spiral radius and a pitch, simultaneously identifies an associated dislocation ring in a neighborhood region of the target spiral dislocation, constructs a lateral coupling index according to lateral distribution, main dislocation line roughness and curvature fluctuation, and further obtains a comprehensive spiral dislocation evolution index from and for determining an evolution stage of the spiral dislocation. The present application can convert morphology development of an open linear spiral dislocation and coupling behavior with an associated dislocation ring into comparable quantitative indexes, and is suitable for in-situ characterization analysis of irradiation, annealing or other microstructure evolution processes.

Description

Technical Field

[0001] This invention relates to the field of material microstructure characterization technology, and in particular to a quantitative method and apparatus for the evolution of helical dislocation morphology. Background Technology

[0002] In the microstructure characterization of materials, dislocations are important linear defects affecting plastic deformation, irradiation embrittlement, and microstructural stability. During irradiation damage, some dislocation lines may form spiral dislocations with periodic curling characteristics; while during annealing or recovery treatment, the formed spiral dislocations may experience morphological relaxation, reduced spiral tightness, or uncoiling. The following explanation uses the formation of spiral dislocations under irradiation conditions as an example.

[0003] Spiral dislocations generated during irradiation are open linear defects. Their key characteristic is not a closed boundary morphology, but rather the periodic bending of the dislocation centerline along the arc length. During the research and development process, the inventors discovered that during the evolution of spiral dislocation morphology, associated dislocation loops may not be independently and randomly distributed in the matrix, but rather appear in the vicinity of the spiral dislocation line and aggregate in specific lateral regions. Simultaneously, these lateral regions are often accompanied by increased roughness of the principal dislocation line, increased local bending, or increased curvature fluctuations. In other words, the evolution of spiral dislocation morphology is not only reflected in the periodic bending of the principal dislocation line itself, but may also be coupled with the lateral distribution of adjacent dislocation loops.

[0004] In related technologies, the quantification of material microstructure mainly focuses on closed-curve defects such as dislocation loops and bubbles. Dislocation lines and dislocation loops are typically observed or statistically analyzed as independent objects. This approach relies heavily on manual observation, descriptions of single geometric dimensions or individual defect numbers, making it difficult to accurately determine the morphological development degree of the main spiral dislocation line, and also failing to reflect the lateral coupling relationship between associated dislocation loops and the main spiral dislocation line. Therefore, there is an urgent need for a quantitative method for the morphological evolution of open linear spiral dislocations, used to quantitatively evaluate the morphological development degree of spiral dislocations and the lateral coupling behavior of associated dislocation loops. Summary of the Invention

[0005] This invention provides a quantitative method and apparatus for the evolution of helical dislocation morphology, which can quantitatively characterize the development degree of helical dislocation morphology and the lateral coupling behavior of its associated dislocation loops.

[0006] In a first aspect, embodiments of the present invention provide a method for quantifying the evolution of helical dislocation morphology, including: Acquire transmission electron microscopy images of a target containing spiral dislocations; Feature extraction is performed on the helical dislocations in the transmission electron microscope image of the target to obtain the projection center line of the helical dislocation and the associated dislocation loop of the helical dislocation in a preset neighboring region. Based on the projection centerline, the morphological parameters of the spiral dislocation are obtained; wherein, the morphological parameters include the total projected profile length, the straight-line distance between the endpoints, the local orientation change, the local projection curvature, the normal displacement, the average spiral radius, and the average pitch. The average spiral radius is determined by the peak-to-valley difference of the normal displacement, and the average pitch is determined by the arc length distance between adjacent in-phase peaks or valleys. Based on the morphological parameters, an index for the morphological development degree of helical dislocations is constructed; wherein, the morphological development degree index includes a normalized profile length growth index, a normalized average orientation change index, a normalized average projection curvature index, and a normalized helical density index. Based on the projected centerline and the associated dislocation loop, a lateral coupling index for spiral dislocations and associated dislocation loops is constructed. The lateral coupling index includes a density asymmetry index for neighboring dislocation loops, a roughness asymmetry index for principal dislocation lines, and a curvature fluctuation asymmetry index for principal dislocation lines. The density asymmetry index for neighboring dislocation loops reflects the degree to which associated dislocation loops are concentrated on the rough side; the roughness asymmetry index for principal dislocation lines reflects the degree of deviation of the principal dislocation line on the rough side relative to the smooth side; and the curvature fluctuation asymmetry index for principal dislocation lines reflects the degree of local curvature fluctuation on the rough side relative to the smooth side. The morphological evolution of spiral dislocations is quantified based on the morphological development degree index and the lateral coupling index.

[0007] Secondly, embodiments of the present invention also provide a quantification device for the evolution of helical dislocation morphology, comprising: The acquisition module is used to acquire transmission electron microscopy images of targets containing helical dislocations; The feature extraction module is used to extract features from the helical dislocations in the transmission electron microscope image of the target, and obtain the projection center line of the helical dislocation and the associated dislocation loop of the helical dislocation in a preset adjacent area. The determination module is used to obtain the morphological parameters of the spiral dislocation based on the projection centerline; wherein, the morphological parameters include the total projected profile length, the straight-line distance between the endpoints, the local orientation change, the local projection curvature, the normal displacement, the average spiral radius, and the average pitch. The average spiral radius is determined by the peak-to-valley difference of the normal displacement, and the average pitch is determined by the arc length distance between adjacent in-phase peaks or valleys. The first construction module is used to construct a morphological development degree index of helical dislocations based on the morphological parameters; wherein, the morphological development degree index includes a normalized profile length growth index, a normalized average orientation change index, a normalized average projection curvature index, and a normalized helical density index. The second construction module is used to construct a lateral coupling index between the spiral dislocation and the associated dislocation loop based on the projection center line and the associated dislocation loop. The lateral coupling index includes a density asymmetry index of the nearest neighbor dislocation loop, a roughness asymmetry index of the principal dislocation line, and a curvature fluctuation asymmetry index of the principal dislocation line. The density asymmetry index of the nearest neighbor dislocation loop reflects the degree to which the associated dislocation loop is concentrated on the rough side. The roughness asymmetry index of the principal dislocation line reflects the degree of deviation of the principal dislocation line on the rough side from the smooth side. The curvature fluctuation asymmetry index of the principal dislocation line reflects the degree of local curvature fluctuation on the rough side from the smooth side. The quantification module is used to quantify the morphological evolution of spiral dislocations based on the morphological development degree index and the lateral coupling index.

[0008] Thirdly, embodiments of the present invention also provide an electronic device, including a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, it implements the method described in any embodiment of the present invention.

[0009] Fourthly, embodiments of the present invention also provide a computer-readable storage medium having a computer program stored thereon, which, when executed in a computer, causes the computer to perform the methods described in any embodiment of the present invention.

[0010] This invention provides a quantitative method and apparatus for the evolution of helical dislocation morphology. Based on transmission electron microscopy (TEM) images, the method extracts morphological parameters such as the profile length, orientation variation, projection curvature, helical radius, and pitch of the helical dislocation from the projection centerline of the open linear helical dislocation, constructing an index for the development degree of the helical dislocation morphology. Simultaneously, it identifies associated dislocation loops in the vicinity of the helical dislocation, evaluates their distribution differences between the rough and smooth sides, and constructs a lateral coupling index by combining the roughness and curvature fluctuations of the principal dislocation line. This achieves a quantitative characterization of the development degree of the helical dislocation morphology and the lateral coupling behavior of its associated dislocation loops. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the embodiments of the present invention or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1 This is a flowchart of a quantitative method for the evolution of spiral dislocation morphology provided in an embodiment of the present invention; Figure 2 This is a hardware architecture diagram of an electronic device provided in an embodiment of the present invention; Figure 3This is a structural diagram of a quantization device for spiral dislocation morphology evolution provided in an embodiment of the present invention; Figure 4 The development degree index of helical dislocation morphology provided in the embodiments of the present invention A schematic diagram of the parameters; Figure 5 Lateral coupling index of helical dislocation-associated dislocation loop provided in embodiments of the present invention A schematic diagram of the parameters; Figure 6 The images show the in-situ TEM morphology evolution of the target spiral dislocations in the Mo-5Re alloy under different irradiation doses in Example 1; where, Figure 6 Images from a to 6h at dose points of 0.030 dpa, 0.20 dpa, 0.50 dpa, 0.70 dpa, 1.0 dpa, 2.0 dpa, 3.0 dpa, and 5.0 dpa, respectively. Figure 7 The degree of development of spiral dislocation morphology in Example 1 is an indicator. Quantitative results of the changes in relevant normalized morphological parameters with irradiation dose; among which, Figure 7 (1) to 7 (5) are the quantitative results of the changes in profile length growth ratio, average orientation change, average absolute projection curvature, average pitch and average helix radius with irradiation dose, respectively. Figure 8 The lateral coupling index of the spiral dislocation and associated dislocation loop in Example 1 Quantitative results of the changes in relevant asymmetric parameters with irradiation dose; among which, Figure 8 (1) to (3) are the quantitative results of the changes in the density of the nearest-neighbor lateral dislocation loops, the curvature fluctuation of the principal dislocation line, and the roughness of the principal dislocation line with the irradiation dose, respectively. Figure 9 This is a morphology reconstruction diagram of the two target spiral dislocations and associated dislocation loops during the annealing process of the Mo-5Re alloy after irradiation in Example 2; wherein, Figure 9 (A) is an image of the annealing process, with two typical spiral dislocations marked as the analysis objects. Figure 9 (B) Dislocation line 1 and dislocation line 2 at different annealing time nodes t 1~ t Diagram showing the morphological evolution process under 8. Detailed Implementation

[0013] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0014] like Figure 1 As shown, this embodiment of the invention provides a method for quantifying the evolution of helical dislocation morphology, including: Step 100: Obtain a transmission electron microscope image of the target containing helical dislocations; Step 102: Extract features from the helical dislocations in the transmission electron microscope image of the target to obtain the projection center line of the helical dislocation and the associated dislocation loops of the helical dislocation in the preset neighboring region. Step 104: Based on the projection centerline, obtain the morphological parameters of the spiral dislocation; wherein, the morphological parameters include the total projected profile length, the straight-line distance between the endpoints, the local orientation change, the local projection curvature, the normal displacement, the average spiral radius and the average pitch. The average spiral radius is determined by the peak-to-valley difference of the normal displacement, and the average pitch is determined by the arc length distance between adjacent in-phase peaks or valleys. Step 106: Based on morphological parameters, construct morphological development degree indices for spiral dislocations; among which, morphological development degree indices include normalized profile length growth index, normalized average orientation change index, normalized average projection curvature index, and normalized spiral density index. Step 108: Based on the projection centerline and the associated dislocation loop, construct the lateral coupling index of the spiral dislocation and the associated dislocation loop; wherein, the lateral coupling index includes the density asymmetry index of the nearest neighbor dislocation loop, the roughness asymmetry index of the principal dislocation line, and the curvature fluctuation asymmetry index of the principal dislocation line. The density asymmetry index of the nearest neighbor dislocation loop reflects the degree to which the associated dislocation loop is concentrated on the rough side, the roughness asymmetry index of the principal dislocation line reflects the degree of deviation of the principal dislocation line on the rough side relative to the smooth side, and the curvature fluctuation asymmetry index of the principal dislocation line reflects the degree of local curvature fluctuation on the rough side relative to the smooth side. Step 110: Quantify the morphological evolution of spiral malformations based on morphological development degree indicators and lateral coupling indicators.

[0015] In this embodiment, the method is based on transmission electron microscopy images. Starting from the projection centerline of an open linear spiral dislocation, it extracts morphological parameters such as the profile length, orientation change, projection curvature, spiral radius, and pitch of the spiral dislocation to construct an index of the development degree of spiral dislocation morphology. At the same time, it identifies the associated dislocation loops in the vicinity of the spiral dislocation, evaluates their distribution differences between the rough and smooth sides, and constructs a lateral coupling index by combining the roughness and curvature fluctuation of the principal dislocation line. This enables a quantitative characterization of the development degree of spiral dislocation morphology and the lateral coupling behavior of its associated dislocation loops.

[0016] It should be noted that this method takes a transmission electron microscope image containing the target helical dislocation as input. Starting from the projection center line of the target helical dislocation, it extracts the morphological development parameters of the main line of the helical dislocation and combines them with the lateral distribution of the associated dislocation loops in the adjacent area to quantitatively evaluate the degree of morphological development of the helical dislocation and the lateral coupling behavior of the associated dislocation loops.

[0017] This invention defines helical dislocations as open linear dislocation structures in which the dislocation lines are distributed in a helical, helical-like, or periodically coiled manner in space. In transmission electron microscopy (TEM) images, helical dislocations typically exhibit morphological characteristics such as extending along a certain direction and exhibiting periodic bending, local peak-valley variations, helical radius variations, and pitch variations. This invention focuses on the morphological quantification of open linear helical dislocations and their lateral distribution relationship with adjacent associated dislocation loops, without requiring helical dislocation type determination as a necessary step.

[0018] In one embodiment of the present invention, the transmission electron microscope (TEM) image includes at least one of TEM bright field image, STEM bright field image, weak beam dark field image, in-situ irradiation TEM image, and in-situ annealing TEM image. The target TEM image is obtained by scaling and preprocessing the original TEM image.

[0019] In this embodiment, before subsequent quantization, the image is scaled to convert pixel coordinates into actual length units. Furthermore, based on image quality and background contrast, the image can undergo background subtraction, contrast enhancement, filtering, local smoothing, edge enhancement, or drift correction. Preferably, the above processing uses a consistent workflow and parameters across the same image sequence to reduce the impact of image processing differences on subsequent quantization results.

[0020] In a series of in-situ image sequences, it is preferable to select the target helical dislocation that can be continuously identified and tracked in multiple image frames as the analysis object. For the same target helical dislocation, it is preferable to maintain the same or similar imaging conditions for subsequent dose points or time points in order to continuously compare the degree of morphological development and lateral coupling behavior.

[0021] In one embodiment of the present invention, the total projected profile length is the cumulative length along the projection centerline from the starting point to the ending point, the endpoint straight-line distance is the straight-line distance connecting the two endpoints of the projection centerline, the local orientation change is used to characterize the degree of local deviation of the tangent direction of the projection centerline at different positions relative to the reference direction, the local projection curvature is used to characterize the degree of bending of the projection centerline at different positions, and the normal displacement is used to characterize the degree of local deviation of the dislocation centerline relative to its smooth helical skeleton.

[0022] like Figure 4 As shown, the centerline of the target spiral dislocation is extracted to obtain the dislocation projection centerline. .in, This represents the arc length coordinates along the dislocation projection centerline. Centerline extraction can be achieved using at least one of the following methods: manual drawing, thresholding, machine learning segmentation, or deep learning segmentation.

[0023] In one specific approach, the projected centerline of the target spiral dislocation is discretized as follows: In the formula, The first one on the center line of the dislocation projection One sampling point, This represents the number of sampling points. To reduce the impact of local pixel noise on curvature and orientation calculations, the discrete centerline can be resampled with equal arc lengths and subjected to moderate smoothing.

[0024] Extracting the center line of dislocation projection Then, it is smoothed or fitted to obtain a smooth spiral skeleton. The smoothed spiral skeleton is used to characterize the overall extension trend of the target spiral dislocation, while the deviation of the actual projected centerline from the smoothed spiral skeleton is used to characterize features such as local roughening, normal displacement, and curvature fluctuations. Smoothing can be achieved using at least one of spline fitting, local regression, low-pass filtering, polynomial fitting, or moving average, but over-smoothing should be avoided to prevent the elimination of the main periodic morphology of the spiral dislocation.

[0025] Based on the center line of dislocation projection Calculate the total projected profile length of the target spiral dislocation. Total projected profile length Let be the cumulative length along the dislocation projection centerline from the starting point to the ending point. For a discrete centerline, the arc length increment between adjacent sampling points can be expressed as: The total projected profile length is: Connect the two endpoints of the target spiral dislocation to obtain the straight-line distance between the endpoints. Total projected profile length Straight-line distance from the endpoint The difference can be used to reflect the degree of curvature and extension of the dislocation line relative to its straight state.

[0026] Based on the center line of dislocation projection Calculate the local orientation change based on the local tangent direction. Local orientation change refers to the change in the arc length of the dislocation projection centerline. The degree of deviation of the local tangent direction at a given point from the reference direction. The reference direction can be the projection direction of the helical axis, the initial principal axis direction, the direction of the line connecting the endpoints, or the local tangent direction of the smooth helical skeleton.

[0027] Furthermore, based on the dislocation projection centerline Local geometric changes, calculate local projected curvature Local projected curvature is used to characterize the bending strength of the target spiral dislocation at different locations; regions with greater curvature usually correspond to more obvious local curling, bending, or topographic perturbation, while regions with less curvature correspond to smoother dislocation segments.

[0028] Furthermore, the normal displacement is used to characterize the local degree to which the actual centerline deviates from the smooth helical skeleton. Preferably, the normal displacement can be expressed as: In the formula, To smooth the helical skeleton at the arc length position The unit normal direction at that location.

[0029] In one embodiment of the present invention, the morphological development degree index is calculated using the following formula: In the formula, As an indicator of the degree of morphological development, This is a normalized contour length growth index. This is a normalized average orientation change index. The normalized average projected curvature index. This is a normalized spiral density index. The ratio of the increase in outline length. This represents the total projected profile length. The straight-line distance between the endpoints For local orientation changes, Let the coordinates be arc length. For average orientation change, For the average absolute projection curvature, For local projection curvature, The average pitch is... The average spiral radius is... The number of spiral radii included in the statistics. For the first The peak value of the normal displacement within a recognizable spiral element. For the first A valley value of the normal displacement within a recognizable spiral element. For the first +1 peak value corresponding to the arc length position For the first The arc length position corresponding to each peak.

[0030] In this embodiment, The result is obtained by directly adding multiple normalized morphology parameters, including the normalized profile length growth index, the normalized average orientation change index, the normalized average projected curvature index, and the normalized helical density index. Through this normalization process, morphology parameters with different dimensions and value ranges are transformed into dimensionless indices, maintaining a monotonic correspondence with the degree of development of helical dislocation morphology. Since all morphology parameters have been normalized, they can be directly added together to form the result. . The larger the value, the higher the degree of morphological development of the target spiral dislocation.

[0031] It should be noted that the above normalization method is the preferred method. In other embodiments, a normalization method that ensures the corresponding parameters increase monotonically with the development and enhancement of the spiral dislocation morphology can also be used. When the target dislocation line is close to a straight line, Approaching 1, Approaching 0; when the curling degree of the target dislocation line increases, It increases accordingly. As a dimensionless quantity, this normalization method allows the curvature index to increase monotonically with the degree of curvature, and avoids the excessive influence of local curvature on the comprehensive index. This value is used to characterize the relative contribution of the helical radius to the pitch within a unit axial direction. The larger the value, the larger the helical radius is relative to the pitch, and the tighter the helical morphology.

[0032] In one embodiment of the present invention, the lateral coupling index is constructed in the following manner: A dividing axis is established based on a smooth spiral skeleton to divide the first lateral region and the second lateral region. Lateral parameters for the first and second lateral regions are constructed based on the projection centerline and associated dislocation loops. Based on lateral parameters, a lateral coupling index for spiral dislocations and associated dislocation loops is constructed.

[0033] like Figure 5 As shown, associated dislocation loops are identified in the vicinity of the target spiral dislocation. Associated dislocation loops can be identified through methods such as manual annotation, machine learning segmentation, or deep learning segmentation. For each associated dislocation loop, its centroid and boundary points can be determined.

[0034] For the A associated dislocation loop, whose centroid or representative point is taken as... .Sure The nearest projection point on the smooth spiral skeleton and take The unit normal direction at the location is . No. The normal distance of each associated dislocation loop relative to the smooth helical skeleton It can be represented as: In the formula, the normal distance The positive and negative signs are used to distinguish the location of the associated dislocation loop in different lateral regions of the smooth spiral skeleton.

[0035] In a preferred embodiment, for helical dislocations whose projected morphology is approximately elliptical or annular, a dividing axis can be established based on a smooth helical skeleton to delineate the first and second lateral regions. Specifically, the lower end intersection point, lower end contraction point, or the midpoint of the point where the distance between adjacent arcs is minimized in the smooth helical skeleton is selected as the lower end reference point. Then select a smooth spiral skeleton along the direction of the long axis of the spiral and... Relative upper reference point The direction of the major axis of the helix can be determined through principal component analysis of a smoothed helical skeleton point set, the direction of the endpoint connection line, or a manually specified projection direction of the helical axis. (Connection) and The dividing axis is obtained. .

[0036] make Let be the unit direction vector of the dividing axis. For any point to be assigned... Define the lateral discriminant. .when When, the point is assigned to the first lateral region; when When the point is located near the dividing axis or its projection overlaps, resulting in unclear classification, it can be classified according to the nearest branch principle or excluded from the lateral statistics.

[0037] To avoid including defects such as spiral dislocations far from the target and those with weak coupling to the principal dislocation line in the statistics, this invention sets a nearest-neighbor statistical bandwidth. Nearest neighbor statistical bandwidth This represents the total width of the nearest neighbor statistical region formed around the centerline of the smooth spiral skeleton or principal dislocation line. Correspondingly, when using normal distance... When performing the screening, the preferred statistical criteria are those that meet the criteria. The associated dislocation loop.

[0038] In one embodiment of the present invention, the lateral coupling index is calculated using the following formula: In the formula, As a lateral coupling index, This is an index of the density asymmetry of nearest-neighbor dislocation loops. The roughness asymmetry index of the main misalignment line. It is a symmetric indicator of the curvature fluctuation of the main misalignment line. As an indicator of lateral asymmetry, These are the lateral parameters corresponding to the rough side. These are the lateral parameters corresponding to the smooth side. To prevent the default small value of zero in the denominator, the lateral parameter X includes the nearest neighbor lateral dislocation loop density. , principal misalignment roughness and principal misalignment curvature fluctuation ,when At that time, the nearest-neighbor dislocation loop density asymmetry index was obtained. ;when At that time, the roughness asymmetry index of the principal dislocation line was obtained. ;when At that time, the asymmetric index of the curvature fluctuation of the principal misalignment line was obtained. , For statistical attribution Lateral region and located in the nearest statistical bandwidth The number of associated dislocation loops within the range, for The length of the principal misalignment line projection profile corresponding to the lateral region. for Normal displacement in the lateral region, for The projection center line of the lateral region, for Lateral region of the sliding spiral skeleton, To correspond to the smooth reference line at the arc length position The unit normal direction at that location, for The density of nearest-neighbor lateral dislocation loops in the lateral region, for The roughness of the principal dislocation lines in the lateral region. for The total projected profile length of the lateral region. For the principal dislocation line roughness of the first lateral region, The roughness of the principal dislocation line in the second lateral region is defined as follows: the side with the largest roughness in the first lateral region and the side with the smallest roughness in the second lateral region are defined as the rough side, and the side with the smallest roughness in the second lateral region are defined as the smooth side. for and The largest of them, for and The smallest of them, for The curvature fluctuation of the principal dislocation line in the lateral region. for The local curvature of the projection centerline in the lateral region at arc length s. To correspond to the smooth reference line at the arc length position The local curvature at that point.

[0039] In this embodiment, It reflects the degree to which associated dislocation loops are concentrated on the rough side; It reflects the degree of deviation of the principal dislocation line on the rough side relative to the smooth side; It reflects the degree of local curvature fluctuation on the rough side relative to the smooth side. The larger the value, the more pronounced the lateral coupling asymmetry between the target spiral dislocation and the associated dislocation loop.

[0040] In one embodiment of the present invention, the morphological evolution of the spiral dislocation is quantified in the following manner: Based on morphological development degree indicators and lateral coupling indicators, a comprehensive spiral dislocation evolution index Z is constructed; among which, ; when When this occurs, it is determined to be in the unspiraled or weakly spiraled stage; when At that time, it was determined to be the spiral morphology formation stage; when At that time, it was determined to be the stage of enhanced lateral coupling between spiral dislocations and associated dislocation loops; Among them, the first stage threshold The threshold value for the second stage is set between 0.8 and 1.2. Use a value between 2.0 and 4.5.

[0041] In this embodiment, based on the comprehensive spiral dislocation evolution index This allows for the determination of the evolutionary stage of the target spiral dislocation. When When the target spiral dislocation does not form a clear periodic spiral morphology, or the spiral morphology is weakly developed; when At that time, it was determined that the target spiral dislocation had formed a clear spiral morphology, but had not yet formed a clear asymmetric lateral coupling of associated dislocation loops; when At that time, it was determined that the target spiral dislocation had formed a clear spiral morphology, and that there was lateral aggregation of associated dislocation loops, enhanced roughening of the principal dislocation line, and / or enhanced curvature fluctuation of the principal dislocation line.

[0042] In some implementations, the morphological evolution of spiral dislocations can be quantified by constructing other comprehensive spiral dislocation evolution indices, such as directly adding the morphological development degree index and the lateral coupling index or adding them after weighting. No specific limitation is made here.

[0043] The method of this invention can output at least one of the following results: an index of the degree of development of spiral dislocation morphology. Lateral coupling index Comprehensive spiral dislocation evolution index The results of determining the evolution stages of the nearest lateral dislocation loop density, principal dislocation line roughness, principal dislocation line curvature fluctuation, and spiral dislocation, as well as the evolution curves of the above parameters with changes in irradiation dose, irradiation time, annealing time, or temperature.

[0044] In summary, the technical solution of the present invention has the following beneficial effects: 1. This invention takes the projection centerline of open linear spiral dislocations as the main analysis object, rather than the boundary of closed defects as the main evaluation object, and can be applied to the quantification of the morphological development degree of open linear defects such as spiral dislocations.

[0045] 2. This invention constructs a system by varying the profile length, orientation, projected curvature, and helical tightness determined by the helical radius and pitch. This can transform the periodic curling, geometric expansion, and overall morphological development of spiral dislocations into comparable quantitative indicators.

[0046] 3. This invention incorporates the associated dislocation loops into the spatial relationship with the principal dislocation line for evaluation, constructing a model based on the density of nearest-neighbor lateral dislocation loops, the roughness of the principal dislocation line, and the curvature fluctuation of the principal dislocation line. It can reflect the coupling behavior between the lateral aggregation of dislocation loops and the roughening of principal dislocation lines.

[0047] 4. This invention can reduce the subjectivity and information loss caused by relying solely on manual observation, single geometric dimensions, or individual defect quantity statistics, and is beneficial for quantitative comparison between different irradiation doses, irradiation times, annealing times, temperature conditions, or material systems.

[0048] 5. This invention relies solely on conventional transmission electron microscopy images and can be implemented using a general image processing platform. It has good feasibility and scalability and can be used for quantitative analysis of material irradiation damage, dislocation evolution, and defect interaction behavior.

[0049] To further illustrate the specific implementation process and practical application effects of the quantization method described in this invention, the following description is provided in conjunction with specific embodiments. It should be noted that the following embodiments are only used to explain the technical solution and parameter calculation process of this invention and are not intended to limit the scope of protection of this invention.

[0050] Example 1 In this embodiment, a body-centered cubic Mo-5Re alloy was used as the sample. After the sample was prepared as a transmission electron microscopy (TEM) thin film, it was placed in an in-situ TEM irradiation platform and subjected to 800 keV / Kr irradiation at 923 K. 2+ and 30keVH2 + Dual-beam irradiation resulted in an irradiation damage rate of 1.67 × 10⁻⁶. -3 dpa / s. During irradiation, continuous bright-field TEM imaging was performed on the region containing the target dislocation line, and image sequences at different irradiation doses were recorded.

[0051] like Figure 6As shown, images at dose points of 0.030 dPa, 0.20 dPa, 0.50 dPa, 0.70 dPa, 1.0 dPa, 2.0 dPa, 3.0 dPa, and 5.0 dPa were selected as the analysis objects. At 0.030 dPa, the target dislocation line was almost a straight line, showing only slight bending and undulation, and had not yet formed a recognizable spiral periodic structure; at 0.20 dPa, the dislocation line began to show periodic undulations; at 0.50 dPa and 0.70 dPa, the spiral morphology of the dislocation line gradually became clear; when the dose increased to 1.0 dPa and above, the spiral dislocation morphology further developed, and a significant difference appeared between the rough side and the smooth side, with associated dislocation loops mainly distributed near the rough side. As the dose further increased to 2.0~5.0 dPa, the local perturbations and associated dislocation loops on the rough side became more obvious.

[0052] Based on the extracted dislocation centerline, the normalized profile length growth index is calculated. Normalized average orientation change index Normalized mean projected curvature index and spiral tightness index The degree of development of the spiral dislocation morphology in this embodiment is expressed as: As shown in Table 1 and Figure 7 As shown, with increasing irradiation dose, The overall trend is upward. In the low-dose phase, The main contributors are profile length increase, orientation change, and projected curvature; when the dose increases to 0.50 dpa and above, the helical radius and pitch can be measured stably, and the helical tightness index begins to participate. The calculations show that the target dislocation line gradually transforms from a near-straight state to a spiral dislocation morphology with periodic curling characteristics.

[0053] Based on the defined dislocation boundaries, the density asymmetry index of nearest-neighbor dislocation loops is calculated. Main position misalignment roughness asymmetry index Asymmetric Indicator of Curvature Fluctuation of Principal Misalignment Line The lateral coupling index is obtained from the following formula: As shown in Table 1 and Figure 8 As shown, starting at 0.2 dPa, the symmetry of the spiral dislocations gradually decreases, and rough and smooth side characteristics begin to appear. After 1.0 dPa, dislocation loops gradually begin to grow along the dislocations. Overall, The overall increase with increasing dose indicates that the target dislocation line gradually develops from a smooth spiral dislocation to a rough and asymmetrical coupled dislocation morphology with complex dislocation loops.

[0054] In obtaining and Then, the comprehensive spiral dislocation evolution index is calculated according to the following formula: As shown in Table 1, Figure 7 and Figure 8 As shown, It can simultaneously reflect two processes: the development of the main spiral dislocation morphology and the enhanced lateral coupling of associated dislocation loops. In this embodiment, a first-stage threshold is set. Second stage threshold .in, The threshold is between 0.03 and 0.20 dpa, corresponding to the dislocation line entering the obvious spiral initial stage from a weakly curved state; The threshold is between 0.70 and 1.0 dpa, corresponding to the stage where associated dislocation loops are generated, rough lateral dislocation lines are roughened and significantly developed, and lateral coupling behavior begins to develop.

[0055] Accordingly, the evolution process of the target dislocation line in this embodiment can be divided into three stages: when At that time, the target dislocation line is in the un-spiraled or weakly spiraled stage, and the dislocation line mainly exhibits slight curvature, not yet forming a stable periodic structure; when At this time, the target dislocation line enters the spiral morphology formation stage, and the profile length of the dislocation line increases, the orientation changes, the projected curvature and the spiral tightness gradually increase; when At this stage, the target dislocation line enters the lateral coupling enhancement stage of spiral dislocation-associated dislocation loop, and the main characteristics are the aggregation of associated dislocation loops on the rough side, roughening of the principal dislocation line, and enhanced curvature fluctuation.

[0056] Table 1 Example 1 , and the comprehensive spiral dislocation evolution index Calculation results As can be seen from this embodiment, the method of the present invention can... Figure 6 The evolution process of spiral dislocation morphology observed in the study is transformed into Table 1. Figure 7 and Figure 8 The quantitative indicators shown. It can characterize the transformation of the target dislocation line from a near-straight state to a spiral dislocation morphology. It can characterize the enhanced lateral coupling between the associated dislocation loop and the rough side principal dislocation line, and the comprehensive index This method can be used to distinguish between two key stages: the initiation of dislocation spiralization and the formation of associated dislocation loops, as well as the enhancement of dislocation line roughening. Therefore, this embodiment illustrates that the method of the present invention can be used for the quantitative evaluation of the formation, development, and coupling evolution of spiral dislocations with associated defects during in-situ irradiation.

[0057] Example 2 This embodiment illustrates the application of the method of the present invention in the annealing recovery process of helical dislocations. A Mo-5Re alloy sample was selected and irradiated to 2 dpa under the same conditions as in Example 1, followed by annealing under an in-situ transmission electron microscope, and the image sequence during the annealing process was recorded. This embodiment selects... Figure 9 The two typical spiral dislocations marked in (A) are used as the analysis objects, denoted as dislocation line 1 and dislocation line 2 respectively, and the same method as in Example 1 is used. , and the comprehensive spiral dislocation evolution index The calculation method is evaluated.

[0058] like Figure 9 As shown in (A), the annealing experiment uses the irradiated sample state as the initial state. The sample is then heated from 923K to 1023K and held at that temperature, and then heated to 1123K and held at that temperature for a longer period. Figure 9 (B) shows the dislocation line 1 and dislocation line 2 at different annealing time nodes. t 1~ t The morphological evolution process under annealing time 8 corresponds to annealing times of 0 min, 5 min, 10 min, 45 min, 53 min, 55 min, 65 min, and 70 min. In the initial annealing state, both spiral dislocations exhibit significant differences between rough and smooth sides, with numerous associated dislocation loops near the rough side. As the annealing time increases, the associated dislocation loops near the rough side gradually decrease, and the local roughening and curvature fluctuations of the principal dislocation line gradually weaken. In the later stage, the spiral profile further relaxes, and it becomes difficult to identify stable spiral compactness characteristics in some areas.

[0059] In this embodiment, the dislocation centerline, rough side ROI, and smooth side ROI are extracted for each annealing time node, and the normalized morphology index is calculated according to the aforementioned method. , , and Thus, an index of the degree of development of spiral dislocation morphology was obtained. Simultaneously, the distribution of associated dislocation loops on the rough and smooth sides was statistically analyzed, and the lateral asymmetry index was calculated. , and This leads to the lateral coupling index. .

[0060] The overall spiral dislocation evolution index is still calculated using the following formula: As shown in Table 2, both dislocation lines are in a relatively high Z range at the initial annealing state, with dislocation line 1 and dislocation line 2 being the most suitable for the initial annealing. The values ​​are 5.310 and 5.863 respectively, indicating that after irradiation, both dislocation lines are in a state with obvious spiral morphology and strong lateral coupling of associated dislocation loops. After annealing begins, the two dislocation lines... All of these initially decrease rapidly, indicating that the aggregation of dislocation loops, roughness asymmetry, and curvature fluctuation asymmetry on the rough side significantly attenuate early in the annealing process. In contrast, The decrease is relatively slower, indicating that the relaxation of the helical principal morphology lags behind the weakening of the lateral coupling behavior of the associated dislocation loop.

[0061] Specifically, dislocation line 1 It decreased from 1.55 at 0 min to 0.45 at 10 min, and further decreased to a lower level after 45 min; dislocation line 2 The value also decreased from 2.07 at 0 min to 0.65 at 10 min. This result indicates that both dislocation lines initially exhibit lateral coupling attenuation in the early stages of annealing, i.e., a reduction in associated dislocation loops and a weakening of local perturbations on the rough side. As annealing progresses, the value of the two dislocation lines... The rate continued to decline, especially in the 55-70 minute range, where the contribution of helical tightness weakened or became difficult to measure reliably, indicating that the helical dislocation mainline itself began to relax and recover significantly.

[0062] This embodiment follows the method described in Embodiment 1. and As a threshold for stage determination. For dislocation line 1, The value decreased from an initial 5.310 to 2.961 at 10 min, indicating that it transitioned from a stage of enhanced lateral coupling between the spiral dislocation and its associated dislocation loop to a stage where the spiral morphology still existed but the lateral coupling had significantly weakened; subsequently, at 55 min... When it drops to 0.997, it enters the weak spiraling or recovery phase. For dislocation line 2, The value decreased from an initial 5.863 to 2.961 at 10 min, and further to 0.630 at 65 min, also showing a reverse transition from a strong lateral coupling state to a weak spiral state.

[0063] Therefore, it can be seen that the two spiral dislocations in Example 2 both follow similar annealing recovery rules: in the initial stage of annealing, the associated dislocation loops decrease first, leading to... The rapid decrease; subsequently, the changes in helix radius, helix tightness, local curvature, and orientation gradually weaken, leading to... The index continued to decline; ultimately, the composite index... The strong lateral coupling stage (above 3) gradually decreases to the spiral morphology preservation stage (between 1 and 3), and further decreases to the weak spiralization or recovery stage (below 1).

[0064] Table 2 Example 2 , and the comprehensive spiral dislocation evolution index Calculation results As can be seen from this embodiment, the method of the present invention can not only be used to evaluate the formation of helical dislocations and the lateral coupling enhancement process of associated dislocation loops during irradiation, but also to evaluate the relaxation of helical dislocation morphology and the disappearance of associated dislocation loops during annealing. , and The ability to provide a consistent recovery trend for two different spiral dislocations indicates that the method of this invention has good repeatability and the ability to evaluate multiple dislocation lines in parallel.

[0065] like Figure 2 , Figure 3 As shown, this embodiment of the invention provides a quantification device for the evolution of helical dislocation morphology. The device embodiment can be implemented in software, hardware, or a combination of both. From a hardware perspective, as... Figure 2 The diagram shown is a hardware architecture diagram of an electronic device for quantifying the evolution of helical dislocation morphology according to an embodiment of the present invention. (Except for...) Figure 2 In addition to the processor, memory, network interface, and non-volatile memory shown, the electronic device in the embodiment may also include other hardware, such as a forwarding chip responsible for processing packets. Taking software implementation as an example, such as... Figure 3 As shown, a device in a logical sense is formed by the CPU of the electronic device in which it is located reading the corresponding computer program from the non-volatile memory into the memory for execution.

[0066] This embodiment provides a quantization device for the evolution of spiral dislocation morphology, comprising: Acquisition module 300 is used to acquire transmission electron microscopy images of a target containing helical dislocations; Feature extraction module 302 is used to extract features from the helical dislocations in the transmission electron microscope image of the target, and obtain the projection center line of the helical dislocation and the associated dislocation loop of the helical dislocation in a preset adjacent area. The determination module 304 is used to obtain the morphological parameters of the spiral dislocation based on the projection centerline; wherein, the morphological parameters include the total projection profile length, the straight-line distance between the endpoints, the local orientation change, the local projection curvature, the normal displacement, the average spiral radius, and the average pitch. The average spiral radius is determined by the peak-to-valley difference of the normal displacement, and the average pitch is determined by the arc length distance between adjacent in-phase peaks or valleys. The first construction module 306 is used to construct a morphological development degree index of helical dislocations based on the morphological parameters; wherein, the morphological development degree index includes a normalized profile length growth index, a normalized average orientation change index, a normalized average projection curvature index, and a normalized helical density index. The second construction module 308 is used to construct a lateral coupling index between the spiral dislocation and the associated dislocation loop based on the projection center line and the associated dislocation loop; wherein, the lateral coupling index includes a density asymmetry index of the nearest neighbor dislocation loop, a roughness asymmetry index of the principal dislocation line, and a curvature fluctuation asymmetry index of the principal dislocation line. The density asymmetry index of the nearest neighbor dislocation loop reflects the degree to which the associated dislocation loop is concentrated on the rough side, the roughness asymmetry index of the principal dislocation line reflects the degree of deviation of the principal dislocation line on the rough side relative to the smooth side, and the curvature fluctuation asymmetry index of the principal dislocation line reflects the degree of local curvature fluctuation on the rough side relative to the smooth side. The quantization module 310 is used to quantify the morphological evolution of spiral dislocations based on the morphological development degree index and the lateral coupling index.

[0067] In this embodiment of the invention, the acquisition module 300 can be used to execute step 100 in the above method embodiment, the feature extraction module 302 can be used to execute step 102 in the above method embodiment, the determination module 304 can be used to execute step 104 in the above method embodiment, the first construction module 306 can be used to execute step 106 in the above method embodiment, the second construction module 308 can be used to execute step 108 in the above method embodiment, and the quantization module 310 can be used to execute step 110 in the above method embodiment.

[0068] In one embodiment of the present invention, the transmission electron microscope (TEM) image includes at least one of TEM bright field image, STEM bright field image, weak beam dark field image, in-situ irradiated TEM image, and in-situ annealed TEM image, wherein the target TEM image is obtained by scaling and preprocessing the original TEM image.

[0069] In one embodiment of the present invention, the total projected profile length is the cumulative length along the projection centerline from the starting point to the ending point, the endpoint straight-line distance is the straight-line distance connecting the two endpoints of the projection centerline, the local orientation change is used to characterize the degree of local deviation of the tangent direction of the projection centerline at different positions relative to the reference direction, the local projection curvature is used to characterize the degree of bending of the projection centerline at different positions, and the normal displacement is used to characterize the degree of local deviation of the dislocation centerline relative to its smooth helical skeleton.

[0070] In one embodiment of the present invention, the morphological development degree index is calculated using the following formula: In the formula, As an indicator of the degree of morphological development, This is a normalized contour length growth index. This is a normalized average orientation change index. The normalized average projected curvature index. This is a normalized spiral density index. The ratio of the increase in outline length. This represents the total projected profile length. The straight-line distance between the endpoints For local orientation changes, Let the coordinates be arc length. For average orientation change, For the average absolute projection curvature, For local projection curvature, The average pitch is... The average spiral radius is... The number of spiral radii included in the statistics. For the first The peak value of the normal displacement within a recognizable spiral element. For the first A valley value of the normal displacement within a recognizable spiral element. For the first +1 peak value corresponding to the arc length position For the first The arc length position corresponding to each peak.

[0071] In one embodiment of the present invention, the lateral coupling index is constructed in the following manner: A dividing axis is established based on a smooth spiral skeleton to divide the first lateral region and the second lateral region. Based on the projection centerline and the associated dislocation loop, lateral parameters of the first lateral region and the second lateral region are constructed; Based on the lateral parameters, a lateral coupling index for helical dislocations and associated dislocation loops is constructed.

[0072] In one embodiment of the present invention, the lateral coupling index is calculated using the following formula: In the formula, As a lateral coupling index, This is an index of the density asymmetry of nearest-neighbor dislocation loops. The roughness asymmetry index of the main misalignment line. It is a symmetric indicator of the curvature fluctuation of the main misalignment line. As an indicator of lateral asymmetry, These are the lateral parameters corresponding to the rough side. These are the lateral parameters corresponding to the smooth side. To prevent the default small value of zero in the denominator, the lateral parameter X includes the nearest neighbor lateral dislocation loop density. , principal misalignment roughness and principal misalignment curvature fluctuation ,when At that time, the nearest-neighbor dislocation loop density asymmetry index was obtained. ;when At that time, the roughness asymmetry index of the principal dislocation line was obtained. ;when At that time, the asymmetric index of the curvature fluctuation of the principal misalignment line was obtained. , For statistical attribution Lateral region and located in the nearest statistical bandwidth The number of associated dislocation loops within the range, for The length of the principal misalignment line projection profile corresponding to the lateral region. for Normal displacement in the lateral region, for The projection center line of the lateral region, for Lateral region of the sliding spiral skeleton, To correspond to the smooth reference line at the arc length position The unit normal direction at that location, for The density of nearest-neighbor lateral dislocation loops in the lateral region, for The roughness of the principal dislocation lines in the lateral region. for The total projected profile length of the lateral region. For the principal dislocation line roughness of the first lateral region, The roughness of the principal dislocation line in the second lateral region is defined as follows: the side with the largest roughness in the first lateral region and the side with the smallest roughness in the second lateral region are defined as the rough side, and the side with the smallest roughness in the second lateral region are defined as the smooth side. for and The largest of them, for and The smallest of them, for The curvature fluctuation of the principal dislocation line in the lateral region. for The local curvature of the projection centerline in the lateral region at arc length s. To correspond to the smooth reference line at the arc length position The local curvature at that point.

[0073] In one embodiment of the present invention, the morphological evolution of the spiral dislocation is quantified in the following manner: Based on the morphological development degree index and the lateral coupling index, a comprehensive spiral dislocation evolution index Z is constructed; wherein... ; when When this occurs, it is determined to be in the unspiraled or weakly spiraled stage; when At that time, it was determined to be the spiral morphology formation stage; when At that time, it was determined to be the stage of enhanced lateral coupling between spiral dislocations and associated dislocation loops; Among them, the first stage threshold The threshold value for the second stage is set between 0.8 and 1.2. Use a value between 2.0 and 4.5.

[0074] It is understood that the structures illustrated in the embodiments of the present invention do not constitute a specific limitation on a quantization device for spiral dislocation morphology evolution. In other embodiments of the present invention, a quantization device for spiral dislocation morphology evolution may include more or fewer components than illustrated, or combine some components, or split some components, or arrange different components. The illustrated components may be implemented in hardware, software, or a combination of software and hardware.

[0075] The information interaction and execution process between the modules in the above-mentioned device are based on the same concept as the method embodiment of the present invention, and the specific details can be found in the description of the method embodiment of the present invention, and will not be repeated here.

[0076] This invention also provides an electronic device, including a memory and a processor. The memory stores a computer program, and when the processor executes the computer program, it implements a quantization method for the evolution of spiral dislocation morphology according to any embodiment of this invention.

[0077] This invention also provides a computer-readable storage medium storing a computer program. When executed by a processor, the computer program causes the processor to perform a quantization method for the evolution of spiral dislocation morphology according to any embodiment of this invention.

[0078] Specifically, a system or apparatus equipped with a storage medium may be provided, on which software program code implementing the functions of any of the embodiments described above is stored, and the computer (or CPU or MPU) of the system or apparatus may read and execute the program code stored in the storage medium.

[0079] In this case, the program code read from the storage medium can itself implement the function of any of the above embodiments, and therefore the program code and the storage medium storing the program code constitute part of the present invention.

[0080] Storage media embodiments for providing program code include floppy disks, hard disks, magneto-optical disks, optical disks (such as CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW), magnetic tapes, non-volatile memory cards, and ROMs. Alternatively, program code can be downloaded from a server computer via a communication network.

[0081] Furthermore, it should be clear that not only can the program code read by the computer be executed, but also the operating system or other components operating on the computer can be instructed based on the program code to perform some or all of the actual operations, thereby realizing the function of any of the embodiments described above.

[0082] Furthermore, it is understood that the program code read from the storage medium is written to the memory set in the expansion board inserted into the computer or to the memory set in the expansion module connected to the computer. Then, based on the instructions of the program code, the CPU or other components installed on the expansion board or expansion module execute some and all of the actual operations, thereby realizing the function of any of the above embodiments.

[0083] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or electronic device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or electronic device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or electronic device that includes said element.

[0084] Those skilled in the art will understand that all or part of the steps of the above method embodiments can be implemented by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it performs the steps of the above method embodiments. The aforementioned storage medium includes various storage media that can store program code, such as ROM, RAM, magnetic disk, or optical disk.

[0085] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A quantitative method for the evolution of spiral dislocation morphology, characterized in that, include: Acquire transmission electron microscopy images of a target containing spiral dislocations; Feature extraction is performed on the helical dislocations in the transmission electron microscope image of the target to obtain the projection center line of the helical dislocation and the associated dislocation loop of the helical dislocation in a preset neighboring region. Based on the projection centerline, the morphological parameters of the spiral dislocation are obtained; wherein, the morphological parameters include the total projected profile length, the straight-line distance between the endpoints, the local orientation change, the local projection curvature, the normal displacement, the average spiral radius, and the average pitch. The average spiral radius is determined by the peak-to-valley difference of the normal displacement, and the average pitch is determined by the arc length distance between adjacent in-phase peaks or valleys. Based on the morphological parameters, an index for the morphological development degree of helical dislocations is constructed; wherein, the morphological development degree index includes a normalized profile length growth index, a normalized average orientation change index, a normalized average projection curvature index, and a normalized helical density index. Based on the projected centerline and the associated dislocation loop, a lateral coupling index for spiral dislocations and associated dislocation loops is constructed. The lateral coupling index includes a density asymmetry index for neighboring dislocation loops, a roughness asymmetry index for principal dislocation lines, and a curvature fluctuation asymmetry index for principal dislocation lines. The density asymmetry index for neighboring dislocation loops reflects the degree to which associated dislocation loops are concentrated on the rough side; the roughness asymmetry index for principal dislocation lines reflects the degree of deviation of the principal dislocation line on the rough side relative to the smooth side; and the curvature fluctuation asymmetry index for principal dislocation lines reflects the degree of local curvature fluctuation on the rough side relative to the smooth side. The morphological evolution of spiral dislocations is quantified based on the morphological development degree index and the lateral coupling index.

2. The method according to claim 1, characterized in that, The transmission electron microscope (TEM) image includes at least one of TEM bright-field image, STEM bright-field image, weak-beam dark-field image, in-situ irradiated TEM image, and in-situ annealed TEM image. The target TEM image is obtained by scaling and preprocessing the original TEM image.

3. The method according to claim 1, characterized in that, The total projected profile length is the cumulative length along the projection centerline from the starting point to the ending point. The endpoint straight-line distance is the straight-line distance connecting the two endpoints of the projection centerline. Local orientation change is used to characterize the degree of local deviation of the tangent direction of the projection centerline at different positions relative to the reference direction. Local projection curvature is used to characterize the degree of curvature of the projection centerline at different positions. Normal displacement is used to characterize the degree of local deviation of the dislocation centerline relative to its smooth helical skeleton.

4. The method according to claim 3, characterized in that, The morphological development level index is calculated using the following formula: In the formula, As an indicator of the degree of morphological development, This is a normalized contour length growth index. This is a normalized average orientation change index. The normalized average projected curvature index. This is a normalized spiral density index. The ratio of the increase in outline length. This represents the total projected profile length. The straight-line distance between the endpoints For local orientation changes, Let the coordinates be arc length. For average orientation change, For the average absolute projection curvature, For local projection curvature, The average pitch is... The average spiral radius is... The number of spiral radii included in the statistics. For the first The peak value of the normal displacement within a recognizable spiral element. For the first A valley value of the normal displacement within a recognizable spiral element. For the first +1 peak value corresponding to the arc length position For the first The arc length position corresponding to each peak.

5. The method according to claim 4, characterized in that, The lateral coupling metric is constructed as follows: A dividing axis is established based on a smooth spiral skeleton to divide the first lateral region and the second lateral region. Based on the projection centerline and the associated dislocation loop, lateral parameters of the first lateral region and the second lateral region are constructed; Based on the lateral parameters, a lateral coupling index for helical dislocations and associated dislocation loops is constructed.

6. The method according to claim 5, characterized in that, The lateral coupling index is calculated using the following formula: In the formula, As a lateral coupling index, This is an index of the density asymmetry of nearest-neighbor dislocation loops. The roughness asymmetry index of the main misalignment line. It is a symmetric indicator of the curvature fluctuation of the main misalignment line. This is an indicator of lateral asymmetry. These are the lateral parameters corresponding to the rough side. These are the lateral parameters corresponding to the smooth side. To prevent the default small value of zero in the denominator, the lateral parameter X includes the nearest neighbor lateral dislocation loop density. , principal misalignment roughness and principal misalignment curvature fluctuation ,when At that time, the nearest-neighbor dislocation loop density asymmetry index was obtained. ;when At that time, the roughness asymmetry index of the principal dislocation line was obtained. ;when At that time, the asymmetric index of the curvature fluctuation of the principal misalignment line was obtained. , For statistical attribution Lateral region and located in the nearest statistical bandwidth The number of associated dislocation loops within the range, for The length of the principal misalignment line projection profile corresponding to the lateral region. for Normal displacement in the lateral region, for The projection center line of the lateral region, for Lateral region of the sliding spiral skeleton, To correspond to the smooth reference line at the arc length position The unit normal direction at that location, for The density of nearest-neighbor lateral dislocation loops in the lateral region, for The roughness of the principal dislocation lines in the lateral region. for The total projected profile length of the lateral region. For the principal dislocation line roughness of the first lateral region, The roughness of the principal dislocation line in the second lateral region is defined as follows: the side with the largest roughness in the first lateral region and the side with the smallest roughness in the second lateral region are defined as the rough side, and the side with the smallest roughness in the second lateral region are defined as the smooth side. for and The largest of them, for and The smallest of them, for The curvature fluctuation of the principal dislocation line in the lateral region. for The local curvature of the projection centerline in the lateral region at arc length s. To correspond to the smooth reference line at the arc length position The local curvature at that point.

7. The method according to claim 6, characterized in that, The morphological evolution of spiral dislocations is quantified in the following way: Based on the morphological development degree index and the lateral coupling index, a comprehensive spiral dislocation evolution index Z is constructed; wherein... ; when When this occurs, it is determined to be in the unspiraled or weakly spiraled stage; when At that time, it was determined to be the spiral morphology formation stage; when At that time, it was determined to be the stage of enhanced lateral coupling between spiral dislocations and associated dislocation loops; Among them, the first stage threshold The threshold value for the second stage is set between 0.8 and 1.

2. Use a value between 2.0 and 4.

5.

8. A quantification device for the evolution of helical dislocation morphology, characterized in that, include: The acquisition module is used to acquire transmission electron microscopy images of targets containing helical dislocations; The feature extraction module is used to extract features from the helical dislocations in the transmission electron microscope image of the target, and obtain the projection center line of the helical dislocation and the associated dislocation loop of the helical dislocation in a preset adjacent area. The determination module is used to obtain the morphological parameters of the spiral dislocation based on the projection centerline; wherein, the morphological parameters include the total projected profile length, the straight-line distance between the endpoints, the local orientation change, the local projection curvature, the normal displacement, the average spiral radius, and the average pitch. The average spiral radius is determined by the peak-to-valley difference of the normal displacement, and the average pitch is determined by the arc length distance between adjacent in-phase peaks or valleys. The first construction module is used to construct a morphological development degree index of helical dislocations based on the morphological parameters; wherein, the morphological development degree index includes a normalized profile length growth index, a normalized average orientation change index, a normalized average projection curvature index, and a normalized helical density index. The second construction module is used to construct a lateral coupling index between the spiral dislocation and the associated dislocation loop based on the projection center line and the associated dislocation loop. The lateral coupling index includes a density asymmetry index of the nearest neighbor dislocation loop, a roughness asymmetry index of the principal dislocation line, and a curvature fluctuation asymmetry index of the principal dislocation line. The density asymmetry index of the nearest neighbor dislocation loop reflects the degree to which the associated dislocation loop is concentrated on the rough side. The roughness asymmetry index of the principal dislocation line reflects the degree of deviation of the principal dislocation line on the rough side from the smooth side. The curvature fluctuation asymmetry index of the principal dislocation line reflects the degree of local curvature fluctuation on the rough side from the smooth side. The quantification module is used to quantify the morphological evolution of spiral dislocations based on the morphological development degree index and the lateral coupling index.

9. An electronic device, characterized in that, It includes a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the method as described in any one of claims 1-7.

10. A computer-readable storage medium, characterized in that, It stores a computer program that, when executed in a computer, causes the computer to perform the method described in any one of claims 1-7.

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