Method for manufacturing a semiconductor laser
By growing Si and TiO2 dielectric films on III-V materials and diffusing Si impurities through annealing to change the lasing wavelength, the problems of material damage and high cost in the prior art are solved, and efficient mass production of semiconductor lasers is realized.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ANHUI POLYTECHNIC UNIV MECHANICAL & ELECTRICAL COLLEGE
- Filing Date
- 2025-12-24
- Publication Date
- 2026-07-14
AI Technical Summary
Existing quantum well hybrid technology suffers from problems such as damaging the material lattice, high cost, and low efficiency in semiconductor laser production, making it difficult to achieve mass production.
By regionally growing Si and TiO2 dielectric films on III-V group materials, annealing is used to diffuse Si impurities, change the lasing wavelength, and photolithography is combined to remove the mixed suppression region, simplifying the process flow and improving the optical catastrophic damage threshold.
This reduces damage to materials, improves process efficiency, lowers production costs, and enables mass production of semiconductor lasers.
Smart Images
Figure CN122393724A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of semiconductor laser manufacturing technology. Specifically, this invention relates to a method for preparing a semiconductor laser. Background Technology
[0002] In the field of semiconductor lasers, quantum well hybridization technology optimizes key performance characteristics such as laser wavelength, threshold current, and output power by changing the composition distribution or band structure of quantum well materials. It has been widely used in fields such as optical communication, optical storage, and laser display.
[0003] Currently, existing quantum trap hybridization techniques are mainly divided into ion implantation-induced hybridization, dielectric film impurity-induced hybridization, vacancy-induced hybridization, thermal annealing-induced hybridization, and laser-induced hybridization. Among these, ion implantation may damage the semiconductor material lattice, affecting device performance; vacancy-induced and thermal annealing-induced hybridization generally require high annealing temperatures and long annealing times, thus causing irreversible damage to the semiconductor material; although laser-induced hybridization has high region selectivity and resolution and controllable damage to the material, its process efficiency is extremely low, production costs are high, and it is difficult to achieve mass production.
[0004] A method for fabricating a semiconductor laser is provided, particularly concerning improving process efficiency, reducing production costs, and achieving mass production. Summary of the Invention
[0005] This invention aims to at least solve one of the technical problems existing in the prior art. To this end, this invention provides a method for fabricating a semiconductor laser, with the purpose of improving process efficiency, reducing production costs, and achieving mass production.
[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows: a method for fabricating a semiconductor laser, wherein the method improves the optical catastrophic damage threshold of the semiconductor laser and enhances its reliability by regionally growing a Si dielectric film on a III-V group material, and includes the following steps: S1. Prepare a quantum well epitaxial wafer, wherein the quantum well epitaxial wafer is composed of a semiconductor substrate layer and an epitaxial layer, wherein the epitaxial layer includes a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer, wherein the semiconductor substrate layer is made of a III-V group material and the epitaxial layer is made of a III-V group multi-component composite material. S2. Selectively grow dielectric films on the surface of the quantum well epitaxial wafer, wherein an N-type III-V semiconductor layer, a Si dielectric film, and a TiO2 dielectric film are grown in the region that promotes mixing, and a TiO2 dielectric film is grown in the region that suppresses mixing, wherein the region that promotes mixing is located in the cavity length direction and has a width of 20-100 μm. S3. Perform annealing treatment, heating the epitaxial wafer to 700-900℃ to diffuse Si impurities, promote interdiffusion of quantum well elements, thereby changing the lasing wavelength and suppressing the interdiffusion of TiO2 suppression elements in the mixed region.
[0007] The semiconductor substrate layer is made of GaAs or InP.
[0008] The epitaxial layer material is GaAs, InP, AlGaAs, GaAsP, AlGaAsP, or AlGaInP.
[0009] The material of the N-type III-V semiconductor layer is GaAs, and the thickness is 50-150 nm.
[0010] The thickness of the Si dielectric film is 50-200 nm.
[0011] The thickness of the TiO2 dielectric film is 50-200 nm.
[0012] The annealing equipment is a rapid annealing furnace, a tube furnace, or other equipment that meets the conditions for safe high-temperature annealing.
[0013] The annealing process takes between 30 seconds and 10 hours.
[0014] The hybrid suppression region is formed by removing the N-type GaAs and Si dielectric films using photolithography, and then growing TiO2 on the surface after removal.
[0015] The semiconductor laser fabrication method of this invention, with its impurity-induced quantum well hybridization, causes less damage to the semiconductor material lattice and has a smaller impact on device performance compared to ion implantation. Compared to vacancy-induced and thermal annealing-induced methods, it features a lower annealing temperature and shorter annealing time, resulting in less thermal damage to the material. Compared to laser-induced methods, although the area selectivity and resolution are relatively poor, it offers higher process efficiency, lower production costs, and enables mass production. Furthermore, Si is the most common impurity material in semiconductor manufacturing, with mature fabrication processes and good hybridization effects, making it an excellent choice for impurity-induced quantum well hybridization. Attached Figure Description
[0016] This manual includes the following figures, which illustrate the following: Figure 1 This is a schematic diagram of the extensional structure; Figure 2 This is a schematic diagram of selective growth of dielectric films. Figure 1 ; Figure 3 This is a schematic diagram of selective growth of dielectric films. Figure 2 ; Figures 4a to 4d This is a schematic diagram of the dielectric membrane preparation process; The following are labeled in the figure: 1. Semiconductor substrate layer; 2. Lower confinement layer; 3. Lower waveguide layer; 4. Active layer; 5. Upper waveguide layer; 6. Upper confinement layer; 7. N-type III-V semiconductor layer; 8. Si dielectric film; 9. Photoresist; 10. Epitaxial layer; 11. TiO2 dielectric film. Detailed Implementation
[0017] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings, in order to help those skilled in the art to have a more complete, accurate and in-depth understanding of the concept and technical solutions of the present invention, and to facilitate its implementation.
[0018] like Figures 1 to 4d As shown, this invention provides a method for fabricating a semiconductor laser. This method optimizes the optical catastrophic damage threshold of semiconductor lasers by regionally growing III-V group materials on a silicon (Si) dielectric film, and includes the following steps: S1. Prepare a quantum well epitaxial wafer. The quantum well epitaxial wafer consists of a semiconductor substrate layer and an epitaxial layer. The epitaxial layer includes a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. The semiconductor substrate layer is made of a III-V group material, and the epitaxial layer is made of a III-V group multi-component composite material. S2. Selectively grow dielectric films on the surface of a quantum well epitaxial wafer, wherein an N-type III-V semiconductor layer, a Si dielectric film, and a TiO2 dielectric film are grown in the region that promotes mixing, and a TiO2 dielectric film is grown in the region that suppresses mixing. The region that promotes mixing is located in the cavity length direction and has a width of 20-100 μm. The material of the N-type III-V semiconductor layer is GaAs. S3. Perform annealing treatment, heat the epitaxial wafer to 700-900℃ to allow Si impurities to diffuse, promote interdiffusion of quantum well elements, thereby changing the lasing wavelength and suppressing the interdiffusion of TiO2 inhibitory elements in the mixed region.
[0019] Specifically, in this embodiment of the invention, an N-type GaAs+Si dielectric film+TiO2 dielectric film is used as the Si diffusion source. The combination of dielectric films can increase the diffusion coefficient of Si impurities, and the TiO2 film above the Si dielectric film does not affect Si diffusion. Therefore, when growing a TiO2 dielectric film in the region where it is necessary to suppress the mixing, the TiO2 in the mixed region does not need to be removed, which simplifies the process.
[0020] In this embodiment of the invention, selective wavelength modulation of the III-V material quantum well is achieved by regionally growing a Si dielectric film on a III-V material, thereby improving the optical catastrophic damage threshold of the semiconductor laser.
[0021] In this embodiment of the invention, the semiconductor substrate layer is made of GaAs or InP. The epitaxial layer is made of GaAs, InP, AlGaAs, GaAsP, AlGaAsP, or AlGaInP, etc.
[0022] In step S1 above, a quantum well epitaxial wafer is fabricated. An epitaxial layer is grown from bottom to top on a semiconductor substrate. The epitaxial layer includes a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limit layer. The lower confinement layer is disposed on the semiconductor substrate. The lower waveguide layer is disposed on the side of the lower confinement layer away from the semiconductor substrate. The active layer is disposed on the side of the lower waveguide layer away from the semiconductor substrate. The upper waveguide layer is disposed on the side of the active layer away from the semiconductor substrate. The upper limit layer is disposed on the side of the upper waveguide layer away from the semiconductor substrate. The substrate material is a III-V group material, such as GaAs or InP. The epitaxial layer material can be a III-V group multi-component composite material such as GaAs, InP, AlGaAs, GaAsP, AlGaAsP, or AlGaInP. Figure 1 As shown.
[0023] In this embodiment of the invention, the thickness of N-type GaAs is 50-150 nm.
[0024] In this embodiment of the invention, the thickness of the Si dielectric film is 50-200 nm.
[0025] In this embodiment of the invention, the thickness of the TiO2 dielectric film is 50-200 nm.
[0026] like Figure 4a As shown, an N-type GaAs layer is grown on the upper surface of the epitaxial layer, and a Si dielectric film is grown on top of the GaAs. The N-type GaAs can be grown using MOCVD technology, with a thickness of 50-150 nm, and its function is to promote Si diffusion. The Si dielectric film can also be grown using MOCVD technology, with a thickness of 50-200 nm, and its function is to provide a Si diffusion source. During the growth of the Si dielectric film, the concentration of P or As doping in the Si dielectric film is controlled by controlling the concentration of the gas source PH3 or AsH3, thereby affecting the Si diffusion rate.
[0027] As shown in Figure 4b, the N-type GaAs and Si dielectric films in the hybrid suppression region are removed using photolithography. Figure 4c As shown, after removing the surface photoresist, a TiO2 dielectric film is grown on the surface of the epitaxial wafer, as follows. Figure 4d As shown, the thickness of the TiO2 dielectric film is 50-200 nm. The TiO2 dielectric film can be prepared using equipment such as electron beam evaporation and sputtering coating machines.
[0028] In this embodiment of the invention, in step S3 above, the prepared epitaxial wafer is placed in a high-temperature furnace for annealing at a temperature of 700-900°C, such as 800°C. The annealing equipment is a rapid annealing furnace, a tube furnace, or other equipment that meets the conditions for safe high-temperature annealing. The annealing time is 30 seconds to 10 hours. This process promotes the diffusion of Si impurities in the mixed region into the epitaxial layer under high-temperature conditions, inducing interdiffusion of elements in the quantum well, changing the quantum well bandgap, and thus altering the lasing wavelength. Suppressing TiO2 in the mixed region inhibits interdiffusion of elements in the underlying epitaxial quantum well under thermal excitation.
[0029] The present invention has been described above by way of example with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited to the above-described manner. Any non-substantial improvements made using the inventive concept and technical solution; or the direct application of the inventive concept and technical solution to other situations without modification, are all within the protection scope of the present invention.
Claims
1. A method for fabricating a semiconductor laser, characterized in that, Includes the following steps: S1. Prepare a quantum well epitaxial wafer, wherein the quantum well epitaxial wafer is composed of a semiconductor substrate layer and an epitaxial layer, wherein the epitaxial layer includes a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer, wherein the semiconductor substrate layer is made of a III-V group material and the epitaxial layer is made of a III-V group multi-component composite material. S2. Selectively grow dielectric films on the surface of the quantum well epitaxial wafer, wherein an N-type III-V semiconductor layer, a Si dielectric film, and a TiO2 dielectric film are grown in the region that promotes mixing, and a TiO2 dielectric film is grown in the region that suppresses mixing, wherein the region that promotes mixing is located in the cavity length direction and has a width of 20-100 μm. S3. Perform annealing treatment, heating the epitaxial wafer to 700-900℃ to diffuse Si impurities, promote interdiffusion of quantum well elements, thereby changing the lasing wavelength and suppressing the interdiffusion of TiO2 suppression elements in the mixed region.
2. The method for fabricating a semiconductor laser according to claim 1, characterized in that, The semiconductor substrate layer is made of GaAs or InP.
3. The method for fabricating a semiconductor laser according to claim 1, characterized in that, The epitaxial layer material is GaAs, InP, AlGaAs, GaAsP, AlGaAsP, or AlGaInP, etc.
4. The method for fabricating a semiconductor laser according to any one of claims 1 to 3, characterized in that, The material of the N-type III-V semiconductor layer is GaAs, and the thickness is 50-150 nm.
5. The method for fabricating a semiconductor laser according to any one of claims 1 to 3, characterized in that, The thickness of the Si dielectric film is 50-200 nm.
6. The method for fabricating a semiconductor laser according to any one of claims 1 to 3, characterized in that, The thickness of the TiO2 dielectric film is 50-200 nm.
7. The method for fabricating a semiconductor laser according to any one of claims 1 to 3, characterized in that, The annealing temperature is 700-900℃.
8. The method for fabricating a semiconductor laser according to any one of claims 1 to 7, characterized in that, The annealing equipment is a rapid annealing furnace, a tube furnace, or other equipment that meets the conditions for safe high-temperature annealing.
9. The method for fabricating a semiconductor laser according to any one of claims 1 to 7, characterized in that, The annealing process takes between 30 seconds and 10 hours.
10. The method for fabricating a semiconductor laser according to any one of claims 1 to 7, characterized in that, The hybrid suppression region is formed by removing the N-type GaAs and Si dielectric films using photolithography, and then growing TiO2 on the surface after removal.