A multi-wavelength laser chip and a white laser light source

Abstract

The application provides a multi-wavelength laser chip and a white light laser source, comprising: an electron-providing layer, an active region and a hole-providing layer which are stacked in sequence; the active region comprises, in sequence from the direction close to the electron-providing layer to the direction close to the hole-providing layer, a first barrier layer, a first quantum well layer, a second barrier layer, a first polarization-doped layer, a second quantum well layer and a third barrier layer; the first polarization-doped layer is Al a In b Ga (1‑a‑b) N, and a decreases and / or b increases in the direction from the second barrier layer to the second quantum well layer, wherein a and b are both greater than or equal to 0 and less than 1. The problem of insufficient injection and low light-emitting efficiency of the quantum well layer in the multi-wavelength laser due to long-distance transport loss of holes far away from the hole-providing layer can be solved.

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