A silicon carbide power module control method, device, storage medium and equipment

Abstract

The application provides a silicon carbide power module control method, device, storage medium and equipment. In the method, a drain-source peak voltage, a voltage change rate, a single cycle switching loss and a junction temperature of a silicon carbide power module are collected in real time as state feedback parameters, initial gate drive parameters, i.e. initial gate resistance and initial dead time, of the silicon carbide power module are corrected based on the state feedback parameters, target gate drive parameters are obtained, and the target gate drive parameters are written into a gate drive chip. In this way, by introducing a real-time feedback correction mechanism, the gate drive parameters are matched with the current working condition, so that the performance and reliability under different working conditions are considered.

Description

Technical Field

[0001] This application relates to the field of electric drive technology, and more specifically, to a silicon carbide power module control method, apparatus, storage medium, and device. Background Technology

[0002] With the rapid popularization of 800V high-voltage platforms in new energy vehicles, SiC MOSFETs (silicon carbide metal-oxide-semiconductor field-effect transistors) have become the core power devices in electric drive inverters due to their low loss, high switching frequency, and high temperature resistance. Currently, the gate drive scheme of SiC MOSFETs in silicon carbide electric drive systems mainly adopts a fixed parameter approach under all operating conditions. That is, a set of fixed gate resistance and dead time parameters are calibrated during the development phase and remain unchanged under all operating conditions. This approach cannot simultaneously guarantee performance and reliability under different operating conditions. Summary of the Invention

[0003] The purpose of this application is to provide a silicon carbide power module control method, device, storage medium and equipment, which aims to solve the problem that the gate drive method of SiC MOSFET in silicon carbide electric drive system cannot simultaneously take into account the performance and reliability under different operating conditions.

[0004] In a first aspect, this application provides a silicon carbide power module control method, applied to a silicon carbide electric drive system; the method includes: obtaining initial gate drive parameters of the silicon carbide power module; wherein the initial gate drive parameters include initial gate resistance and initial dead time; obtaining state feedback parameters of the silicon carbide power module, and correcting the initial gate drive parameters based on the state feedback parameters to obtain target gate drive parameters; wherein the state feedback parameters include drain-source peak voltage, voltage change rate, single-cycle switching loss, and junction temperature; transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module, so that the gate drive chip drives the gate of the silicon carbide power module based on the target gate drive parameters.

[0005] In the above implementation process, the drain-source peak voltage, voltage change rate, single-cycle switching loss, and junction temperature of the silicon carbide power module are collected in real time as state feedback parameters. Based on the state feedback parameters, the initial gate drive parameters of the silicon carbide power module, namely the initial gate resistance and the initial dead time, are corrected to obtain the target gate drive parameters, which are then written into the gate driver chip. In this way, by introducing a real-time feedback correction mechanism, the gate drive parameters are matched with the current operating conditions, thereby taking into account both performance and reliability under different operating conditions.

[0006] Furthermore, in some examples, obtaining the initial gate drive parameters of the silicon carbide power module includes: obtaining multiple core state parameters of the silicon carbide electric drive system; wherein, the core state parameters include: DC bus voltage, load current, junction temperature of the silicon carbide power module, and operating condition dynamic level; the operating condition dynamic level characterizes the degree of operating condition change of the silicon carbide electric drive system under operating conditions; matching the subdivided operating conditions corresponding to the core state parameters according to a preset full-condition subdivision and grading library, and obtaining the initial gate drive parameters corresponding to the subdivided operating conditions; wherein, the preset full-condition subdivision and grading library includes initial gate interval parameters corresponding to multiple subdivided operating conditions; the multiple subdivided operating conditions are obtained by setting multiple intervals for each core state parameter among the multiple core state parameters and combining all the different intervals of each core state parameter; each subdivided operating condition corresponds to a set of pre-calibrated initial gate drive parameters.

[0007] In the above implementation process, a specific method for obtaining the initial gate drive parameters of the silicon carbide power module is provided.

[0008] Furthermore, in some examples, the modification of the initial gate drive parameters based on the state feedback parameters includes: using an incremental PID algorithm to optimize the initial gate drive parameters according to preset safety constraints, with the goal of minimizing the single-cycle switching loss; wherein the preset safety constraints include: the drain-source peak voltage is less than or equal to a target voltage threshold; the voltage change rate is less than or equal to a target change rate threshold; the junction temperature is less than or equal to a target temperature threshold; and the dead time is greater than or equal to a target time threshold.

[0009] In the above implementation process, four automotive-grade mandatory specifications are used as insurmountable constraint boundaries. The initial gate drive parameters are corrected through closed-loop feedback using an incremental PID algorithm, thereby improving robustness.

[0010] Furthermore, in some examples, at least one of the target voltage threshold, the target rate of change threshold, the target temperature threshold, and the target time threshold is dynamically adjusted according to the aging degree of the silicon carbide power module.

[0011] In the above implementation process, the characteristic deviation caused by the aging of components is compensated through the full life cycle aging compensation mechanism, thereby ensuring that the performance of the whole vehicle meets the standards throughout the entire life cycle.

[0012] Furthermore, in some examples, before transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module, the method further includes: determining whether the target gate drive parameters are within a valid range; if the determination result is negative, restoring the gate drive parameters of the silicon carbide power module to the last valid configuration; the step of transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module is performed if the determination result is positive.

[0013] In the above implementation process, after obtaining the target gate drive parameters, their validity is first verified. Only if the target gate drive parameters pass the validity verification will the operation of transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module be executed. If the target gate drive parameters fail the validity verification, the system will roll back to the last valid configuration. In this way, it is ensured that the electric drive system does not malfunction due to invalid parameters.

[0014] Furthermore, in some examples, after transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module, the method further includes: reading the configuration confirmation frame of the gate drive chip and performing a validity check on the current configuration operation based on the configuration confirmation frame; if the check fails, the current configuration is determined to be a failure, and the operation of transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module, reading the configuration confirmation frame of the gate drive chip, and performing a validity check on the current configuration operation based on the configuration confirmation frame is repeated, and the number of failures is accumulated; when the number of consecutive failures reaches a preset threshold, the gate drive parameters of the silicon carbide power module are switched to preset safety parameters, and the fault is reported to the vehicle controller.

[0015] In the above implementation process, after configuring the gate driver chip parameters, a configuration confirmation frame is read and used to verify the configuration validity. If the verification fails, a retry mechanism is triggered. When the number of retries reaches a preset threshold and the verification still fails, the system switches to preset safety parameters and reports the fault to the vehicle controller. This prevents parameter configuration errors caused by SPI bus interference, temporary logic anomalies in the chip, etc., thereby avoiding damage to the silicon carbide power module due to incorrect gate drive parameters and improving robustness.

[0016] Furthermore, in some examples, the step of obtaining the state feedback parameters of the silicon carbide power module and correcting the initial gate drive parameters based on the state feedback parameters to obtain the target gate drive parameters is executed in response to any of the following triggering conditions: a periodic hard interrupt is detected; the vehicle is detected to be in a dynamic operating condition according to the vehicle controller signal of the vehicle where the silicon carbide electric drive system is located; wherein the period of the periodic hard interrupt is a first time period; the vehicle controller signal is read from the vehicle controller according to a second time period; the second time period is greater than the first time period.

[0017] In the above implementation process, the vehicle controller signal is read, dynamic operating conditions are predicted, and parameters are adjusted in advance to avoid control lag and ensure the smoothness of vehicle driving.

[0018] Secondly, this application provides a silicon carbide power module control device applied to a silicon carbide electric drive system; the device includes: an acquisition module for acquiring initial gate drive parameters of the silicon carbide power module; wherein the initial gate drive parameters include initial gate resistance and initial dead time; a correction module for acquiring state feedback parameters of the silicon carbide power module and correcting the initial gate drive parameters based on the state feedback parameters to obtain target gate drive parameters; wherein the state feedback parameters include drain-source peak voltage, voltage change rate, single-cycle switching loss, and junction temperature of the silicon carbide power module; and a transmission module for transmitting the target gate drive parameters to the gate driver chip corresponding to the silicon carbide power module, so that the gate driver chip drives the gate of the silicon carbide power module based on the target gate drive parameters.

[0019] Thirdly, this application provides an electronic device comprising: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor, when executing the computer program, implements the steps of the method described in any of the first aspects.

[0020] Fourthly, this application provides a computer-readable storage medium storing instructions that, when executed on a computer, cause the computer to perform the method described in any of the first aspects.

[0021] Other features and advantages disclosed in this application will be set forth in the following description, or some features and advantages may be inferred from the description or determined without doubt, or may be learned by practicing the above-described technology disclosed in this application.

[0022] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 A flowchart of a silicon carbide power module control method provided in this application embodiment; Figure 2 A schematic diagram of the calibration system architecture involved in a full-condition adaptive calibration scheme for gate drive parameters of an automotive-grade silicon carbide power module provided in an embodiment of this application; Figure 3 A block diagram of a silicon carbide power module control device provided in an embodiment of this application; Figure 4 This is a structural block diagram of an electronic device provided in an embodiment of this application. Detailed Implementation

[0025] The technical solutions in the embodiments of this application will now be described with reference to the accompanying drawings.

[0026] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0027] With the rapid popularization of 800V high-voltage platforms in new energy vehicles, SiC MOSFETs (silicon carbide metal-oxide-semiconductor field-effect transistors) have become the core power devices in electric drive inverters due to their low loss, high switching frequency, and high temperature resistance. Currently, the gate drive scheme of SiC MOSFETs in silicon carbide electric drive systems mainly adopts a fixed parameter approach under all operating conditions. That is, a set of fixed gate resistance and dead time parameters are calibrated during the development phase and remain unchanged under all operating conditions. This approach cannot simultaneously guarantee performance and reliability under different operating conditions.

[0028] To address the aforementioned issues, this application provides a silicon carbide power module control scheme. It collects real-time data on the drain-source peak voltage, voltage change rate, single-cycle switching loss, and junction temperature of the silicon carbide power module as state feedback parameters. Based on these parameters, the initial gate drive parameters (initial gate resistance and initial dead time) of the silicon carbide power module are corrected to obtain the target gate drive parameters, which are then written into the gate driver chip. Thus, by introducing a real-time feedback correction mechanism, the gate drive parameters are matched to the current operating conditions, thereby balancing performance and reliability across the entire operating range.

[0029] The embodiments of this application will be described below: like Figure 1 As shown, Figure 1 This is a flowchart illustrating a silicon carbide power module control method provided in an embodiment of this application. The method can be applied to a silicon carbide electric drive system. A silicon carbide electric drive system refers to an electric drive system based on silicon carbide semiconductor materials. In this embodiment, the silicon carbide electric drive system may include a main control MCU (Microcontroller Unit), a silicon carbide power module, and a gate driver chip connected to the silicon carbide power module. The method can be executed by the main control MCU. The method includes: Step 101: Obtain the initial gate drive parameters of the silicon carbide power module; wherein, the initial gate drive parameters include the initial gate resistance and the initial dead time; The silicon carbide power module mentioned in this step can refer to a SiC MOSFET module. The initial gate drive parameters of the silicon carbide power module include the initial gate resistance and the initial dead time, which can be obtained through pre-calibration. The initial gate resistance here is the initial value of the gate resistance, which is a resistor connected in series in the gate drive circuit of the power semiconductor device. It is used to control the switching speed of the device, suppress oscillation, limit peak current, and adjust switching losses. The initial dead time here is the initial value of the dead time. Dead time refers to a deliberately inserted safety protection time from when one of the two switches in the inverter or half-bridge circuit is completely turned off until the other switch begins to conduct. During this time, both switches are in the off state to prevent simultaneous conduction, which could cause a shoot-through and short circuit, burning out the device.

[0030] Step 102: Obtain the state feedback parameters of the silicon carbide power module, and correct the initial gate drive parameters based on the state feedback parameters to obtain the target gate drive parameters; wherein, the state feedback parameters include drain-source peak voltage, voltage change rate, single-cycle switching loss, and junction temperature. In this embodiment, the drain-source peak voltage, voltage change rate, single-cycle switching loss, and junction temperature of the silicon carbide power module are collected in real time under the current operating conditions, serving as status feedback parameters. The drain-source peak voltage refers to the instantaneous overvoltage generated between the drain and source of the MOSFET during the turn-off transient due to the interaction between the circuit's parasitic inductance and the rapidly changing current. Excessively high drain-source peak voltages can threaten device reliability. The voltage change rate refers to the rate of change of the DC bus voltage over time; exceeding the voltage change rate can lead to EMC (Electromagnetic Compatibility) failures and bearing electrochemical corrosion. Single-cycle switching loss refers to the energy loss of the MOSFET due to voltage and current overlap during a complete switching cycle; a surge in switching losses can cause over-temperature derating and device breakdown. The junction temperature of the silicon carbide power module refers to the temperature of the hottest spot inside the semiconductor chip, directly determining device performance and lifespan. Based on these state feedback parameters, the initial gate drive parameters are corrected, thereby automatically adjusting the gate drive parameters of the silicon carbide power module to the optimal value under the current operating conditions, i.e., the target gate drive parameters, according to the dynamic changes in the actual operating environment. Specifically, the drain-source spike voltage can be obtained by capturing the waveform using an external measurement circuit, such as an oscilloscope and differential probe, and then reading the maximum value of the waveform at the moment of turn-off; the voltage change rate can be calculated by the main control MCU directly measuring the DC bus voltage using a high-voltage differential probe or voltage sensor; the junction temperature of the silicon carbide power module can be acquired in real time by a temperature sensor; the single-cycle switching loss can be calculated by the main control MCU based on the real-time acquired drain-source voltage, drain current, and switching cycle, using an on-chip integrated analog-to-digital converter and multiplication-integration unit, or it can be directly measured and provided by an external dedicated loss monitoring circuit.

[0031] Step 103: Transmit the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module, so that the gate drive chip drives the gate of the silicon carbide power module based on the target gate drive parameters.

[0032] This step refers to the following: After obtaining the target gate drive parameters, the main control MCU writes the target gate drive parameters into the corresponding register of the gate driver chip. The gate driver chip can then read the target gate drive parameters from the register and generate the corresponding actual voltage waveform to drive the gate of the silicon carbide power module, thereby completing the switching action. Optionally, the main control MCU can write the target gate drive parameters into the corresponding register of the gate driver chip via the SPI (Serial Peripheral Interface) interface to configure the gate drive parameters. Furthermore, the main control MCU can read the configuration confirmation frame from the gate driver chip to verify the validity of the configuration.

[0033] In some embodiments, step 101 may include: acquiring multiple core state parameters of the silicon carbide electric drive system; wherein the core state parameters include DC bus voltage, load current, junction temperature of the silicon carbide power module, and operating condition dynamic level; the operating condition dynamic level characterizes the degree of operating condition change of the silicon carbide electric drive system under operating conditions; matching the subdivided operating conditions corresponding to the core state parameters according to a preset full-condition subdivision and grading library, and acquiring the initial gate drive parameters corresponding to the subdivided operating conditions; wherein the preset full-condition subdivision and grading library includes multiple initial gate interval parameters corresponding to multiple subdivided operating conditions; the multiple subdivided operating conditions are obtained by setting multiple intervals for each core state parameter among the multiple core state parameters and combining all the different intervals of each core state parameter; each subdivided operating condition corresponds to a set of pre-calibrated initial gate drive parameters.

[0034] The core state parameters mentioned above can be core parameters representing the state of the silicon carbide electric drive system under the current operating conditions. These include DC bus voltage, load current, junction temperature of the silicon carbide power module, and operating condition dynamic level. The load current can be determined based on the real-time acquired three-phase output current of the silicon carbide electric drive system. The operating condition dynamic level of the silicon carbide electric drive system can include a steady-state level and a dynamic level. The steady-state level corresponds to a relatively stable operating state of the silicon carbide electric drive system, while the dynamic level corresponds to a situation where the operating state of the silicon carbide electric drive system changes drastically. In implementation, the dynamic change rate of the silicon carbide electric drive system's operating conditions can be acquired in real time. The dynamic level of the current operating condition is determined based on the magnitude of this rate. For example, when the dynamic change rate is greater than or equal to a preset rate, the dynamic level is determined to be a dynamic level; when it is less than the preset rate, it is determined to be a steady-state level. This dynamic change rate quantifies the severity of the transition from steady-state to transient states in the electric drive system, and can be calculated based on the transient change rate of the three-phase output current or the torque command change rate of the main control MCU. In this embodiment, the value ranges of multiple core state parameters of the silicon carbide electric drive system can be divided into intervals. Then, all the different intervals of each core state parameter are combined, with each combination corresponding to a subdivided operating condition, thus dividing the entire electric drive operation scenario into multiple subdivided operating conditions. During the calibration phase, tests are performed under each subdivided operating condition, and the gate resistance and dead time are recorded and stored, thereby establishing a full-condition subdivision and grading library. In this way, the main control MCU uses the core status parameters collected in real time as an index to query the full-condition subdivision library, thereby locating the subdivision of the current core status parameters and obtaining the initial gate drive parameters corresponding to that subdivision. This improves the accuracy of initial gate drive parameter matching.

[0035] Optionally, the DC bus voltage includes the following three ranges: low voltage range, rated range, and high voltage range; the load current includes the following four ranges: light load range, medium load range, heavy load range, and overload range; the junction temperature of the silicon carbide power module includes the following four ranges: low temperature range, normal temperature range, high temperature range, and over-temperature range; the operating condition dynamic level includes the following two ranges: steady-state range and dynamic range. In other words, in the full-condition subdivision and grading library, the entire electric drive operating scenario can be divided into 96 subdivision operating conditions. Taking a 1200V automotive-grade silicon carbide power module as an example, the division rules are as follows: The DC bus voltage is divided into three ranges: low voltage range (500V-650V), rated range (650V-750V), and high voltage range (750V-900V), to cover the entire fluctuation range of the 800V platform; the load current is divided into four ranges: light load range (0-20% of rated current), medium load range (20% of rated current), and high load range (20% of rated current). The initial gate drive parameters are divided into three ranges: -50% rated current, heavy load range (50%-100% rated current), and overload range (100%-150% rated current) to match the module's 400A rated specification. The module junction temperature is divided into four ranges: low temperature (-40℃-25℃), normal temperature (25℃-75℃), high temperature (75℃-125℃), and over-temperature (125℃-175℃) to cover the entire automotive-grade temperature range. The dynamic operating condition levels are divided into two ranges: steady-state and dynamic, to match the SPI configuration response speed of the driver chip. Combining these different ranges of core state parameters yields 96 subdivided operating conditions. For example, low voltage, light load, low temperature, and steady-state ranges can constitute one subdivided operating condition, and low voltage, medium load, low temperature, and steady-state ranges can constitute another. This achieves precise matching of the initial gate drive parameters across all operating conditions. In implementation, the main control MCU can collect the DC bus voltage, three-phase output current, junction temperature of silicon carbide power module and dynamic change rate of operating conditions of silicon carbide electric drive system in real time, thereby obtaining the core state parameters of the current operating condition, matching the corresponding subdivided operating condition, and then calling the corresponding initial gate drive parameters.

[0036] In some embodiments, the modification of the initial gate drive parameters based on the state feedback parameters mentioned in step 102 may include: using an incremental PID algorithm to optimize the initial gate drive parameters according to preset safety constraints, with the goal of minimizing the single-cycle switching loss; wherein the preset safety constraints include: the drain-source peak voltage is less than or equal to a target voltage threshold; the voltage change rate is less than or equal to a target change rate threshold; the junction temperature is less than or equal to a target temperature threshold; and the dead time is greater than or equal to a target time threshold. That is, using the preset safety constraints as constraint boundaries, the initial gate drive parameters are adaptively modified in a closed loop based on the state feedback parameters to obtain the optimal gate drive parameters, i.e., the target gate drive parameters. The preset safety constraints include: the drain-source peak voltage is less than or equal to a target voltage threshold; the voltage change rate is less than or equal to a target change rate threshold; the junction temperature is less than or equal to a target temperature threshold; and the dead time is greater than or equal to a target time threshold. The target voltage threshold can be a certain percentage of the rated voltage of the silicon carbide MOSFET, such as 80%. Therefore, when the silicon carbide power module is an automotive-grade 1200V silicon carbide power module, the target voltage threshold is 960V. The target rate of change threshold can be 15kV / μs. The target temperature threshold can be 150℃. The target time threshold can be 500ns. Thus, with four automotive-grade mandatory specifications as inviolable constraint boundaries, during the correction process, the main control MCU determines whether the collected state feedback parameters exceed these constraint boundaries. If all state feedback parameters do not exceed the constraint boundaries, i.e., the preset safety constraint conditions are met, then with the goal of improving performance, and without exceeding the constraint boundaries, the dead time and gate resistance are gradually reduced to explore better gate drive parameters in the direction of reducing switching losses. If any state feedback parameter exceeds the constraint boundary, the main control MCU performs protective adjustments. For example, when the dead time is less than 500ns, the dead time is corrected to 500ns; when the dead time is greater than or equal to 500ns, the gate resistance is increased to reduce the drain-source peak voltage and voltage change rate until the state feedback parameters return to within the constraint boundaries. Furthermore, to achieve smooth and fast correction, an incremental PID (proportional-integral-derivative) algorithm is used to correct the initial gate drive parameters in real time, thereby improving robustness. The incremental PID algorithm here is a control algorithm that performs PID control on the increment of the control quantity. In implementation, the incremental PID algorithm uses the current single-cycle switching loss as the feedback value, compares the feedback value with the target value (minimum switching loss) to obtain the error, and calculates the adjustment amount of gate resistance and dead time based on the error.

[0037] In some embodiments, the gate resistor supports a preset number of adjustable levels; during the optimization of the initial gate drive parameters, the gate resistor is adjusted by one level each time, and the dead time adjustment step is 100ns. That is, when the gate resistor of the silicon carbide power module provides several resistance value levels, and the power supply drive system switches between them according to actual operating conditions, the gate resistor is limited to one level of adjustment each time. For example, when the gate resistor supports four adjustable levels, namely 3Ω, 6Ω, 12Ω and 20Ω, if the current gate resistor level is 12Ω, and the gate resistor adjustment calculated by the incremental PID algorithm is -9Ω, that is, it needs to be reduced by two levels, then the main control MCU will force it to only reduce by one level, that is, from 12Ω to 6Ω. In this way, it avoids the situation where the switching speed changes suddenly due to cross-level adjustment, the drain-source peak voltage rises by hundreds of volts instantaneously, and thus breaks down the SiC MOSFET. In addition, the dead time adjustment step is set to 100ns, meaning the dead time can be adjusted by a maximum of 100ns each time. This ensures both optimization speed and effectively avoids pass-through risks.

[0038] In practical applications, silicon carbide power modules undergo aging under long-term operating conditions due to high temperature, high voltage, and high current stress. When aging causes changes in the switching characteristics of the silicon carbide power module, the original optimal drive parameters may no longer meet safety constraints or efficiency requirements. Therefore, in some embodiments, at least one of the aforementioned target voltage threshold, target rate of change threshold, target temperature threshold, and target time threshold is dynamically adjusted according to the degree of aging of the silicon carbide power module. In other words, a full lifecycle aging compensation mechanism can be introduced during the optimization of gate drive parameters of silicon carbide power modules. Specifically, during vehicle operation, the main control MCU can record the changes in the switching characteristics of the silicon carbide power module in real time, determine its aging degree online, and dynamically adjust the threshold set in the preset safety constraints based on the aging degree. For example, the aging degree can be quantified using SOH (State of Health). The value of SOH ranges from 0 to 1, and the smaller the value, the more severe the aging. In each switching cycle of normal vehicle operation, key characteristic quantities such as on-resistance, threshold voltage, and body diode voltage drop are collected. Then, the correlation model between parameter degradation and SOH is used to evaluate the SOH of the silicon carbide power module in real time. When SOH=1, the maximum value of the module junction temperature in the constraint boundary, i.e., the target temperature threshold, is 150℃. When SOH=0.7, due to the increase in thermal resistance of the heat dissipation path caused by aging, the junction temperature is higher for the same loss. The original maximum junction temperature may be too harsh for the aging device, so the target temperature threshold is adjusted to 145℃. In this way, the characteristic deviation caused by the aging of components is compensated through the full life cycle aging compensation mechanism, thereby ensuring that the performance of the whole vehicle meets the standards throughout the entire life cycle.

[0039] In some embodiments, before step 103, the method may further include: determining whether the target gate drive parameter is within a valid range; if the determination result is negative, restoring the gate drive parameter of the silicon carbide power module to the last valid configuration; the step of transmitting the target gate drive parameter to the gate drive chip corresponding to the silicon carbide power module is performed if the determination result is positive. In other words, after obtaining the target gate drive parameters, their validity is first verified. Specifically, using the previous example, when the gate resistance supports four adjustable levels, it is determined whether the gate resistance in the target gate drive parameters is within the four adjustable levels, and whether the dead time in the target gate drive parameters is within the corresponding valid range, such as 500ns to 2μs. If both results are yes, it indicates that the target gate drive parameters have passed the validity verification, and the operation of transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module is executed. Conversely, if the gate resistance in the target gate drive parameters is not within the four adjustable levels, or the dead time is not within the valid range of 500ns to 2μs, it indicates that the target gate drive parameters have failed the validity verification, and the system is rolled back to the last valid configuration. In this way, it is ensured that the electric drive system does not malfunction due to invalid parameters.

[0040] In some embodiments, after step 103, the method may further include: reading the configuration confirmation frame of the gate driver chip and performing a validity check on the current configuration operation based on the configuration confirmation frame; if the check fails, the current configuration is determined to be a failure, and the operation of transmitting the target gate driver parameters to the gate driver chip corresponding to the silicon carbide power module, reading the configuration confirmation frame of the gate driver chip, and performing a validity check on the current configuration operation based on the configuration confirmation frame is repeated, and the number of failures is accumulated; when the number of consecutive failures reaches a preset threshold, the gate driver parameters of the silicon carbide power module are switched to preset safety parameters, and the fault is reported to the vehicle controller. That is, after the main control MCU completes the parameter configuration of the gate driver chip, it reads the configuration confirmation frame returned by the gate driver chip. This configuration confirmation frame can be considered as an acknowledgment signal, which may include a check code and a status flag. The check code is the latest value of the internal register of the gate driver chip, and the status flag indicates the status information of the gate driver chip itself. The main control MCU verifies the validity of the configuration operation based on the configuration confirmation frame. If the checksum in the configuration confirmation frame matches the target gate drive parameters transmitted by the main control MCU to the gate driver chip, and the status flag shows a normal value, the verification is considered successful, and the configuration is deemed valid. If the checksum does not match the target gate drive parameters, or the status flag shows an error, the verification fails, and the configuration is deemed unsuccessful. In this case, the main control MCU triggers a retry mechanism, repeatedly executing the parameter writing and verification operations. When the number of retries by the main control MCU reaches a preset threshold, such as 3 times, and each write verification fails, it switches to preset safety parameters and reports a fault to the vehicle controller. The preset safety parameters can be considered as the default safety parameters fixed at the factory, such as a gate resistance of 20Ω and a dead time of 1μs. This prevents parameter configuration errors caused by factors such as SPI bus interference and temporary logic anomalies in the chip, thereby avoiding damage to the silicon carbide power module caused by operating with incorrect gate drive parameters.

[0041] In some embodiments, step 102 may be executed in response to any of the following triggering conditions: detection of a periodic hard interrupt; detection that the vehicle is in a dynamic operating condition based on the vehicle controller signal of the vehicle where the silicon carbide electric drive system is located; wherein the period of the periodic hard interrupt is a first time period; the vehicle controller signal is read from the vehicle controller according to a second time period; the second time period is greater than the first time period. That is, every first time period, the hardware timer automatically sends an interrupt request to the main control MCU. At this time, the main control MCU collects the status feedback parameters in real time, corrects the initial gate drive parameters, and outputs the target gate drive parameters. Every second time period, the main control MCU reads the vehicle controller information, such as the torque command, accelerator pedal change rate, braking command, etc., through the vehicle CAN (Controller Area Network) bus to detect whether the vehicle is in a dynamic operating condition such as rapid acceleration, energy recovery switching, or overload. If the vehicle is detected to be in a dynamic operating condition, the main control MCU adjusts the gate drive parameters in advance to avoid control lag. The first time period can be 1ms, and the second time period can be 10ms. Of course, in other embodiments, the first time period and the second time period can also be set differently according to the needs of the specific scenario.

[0042] In this embodiment, the drain-source peak voltage, voltage change rate, single-cycle switching loss, and junction temperature of the silicon carbide power module are collected in real time as state feedback parameters. Based on these state feedback parameters, the initial gate drive parameters of the silicon carbide power module, namely the initial gate resistance and initial dead time, are corrected to obtain the target gate drive parameters, which are then written into the gate driver chip. Thus, by introducing a real-time feedback correction mechanism, the gate drive parameters are matched to the current operating conditions, thereby balancing performance and reliability under different operating conditions.

[0043] To provide a more detailed explanation of the solution in this application, a specific embodiment is described below: This embodiment provides a full-condition adaptive calibration scheme for gate drive parameters of automotive-grade silicon carbide power modules. This scheme is applied to the silicon carbide electric drive system of new energy vehicles. The silicon carbide electric drive system includes a main control MCU, a silicon carbide power module, a gate drive chip, and peripheral circuitry. The main control MCU is an automotive-grade multi-core MCU with multiple SPI peripherals, a high-speed ADC (Analog-to-Digital Converter), and an ePWM (Enhanced Pulse Width Modulation) module. The silicon carbide power module is a SiC MOSFET module with a built-in NTC (Negative Temperature Coefficient). The negative temperature coefficient (NTC) case temperature sensor is a mass-produced general-purpose module for 800V electric drive platforms. There are a total of 6 gate driver chips, one for each phase bridge arm, which supports SPI online configuration of gate resistor channel switching, dead time, etc. The peripheral circuit adopts the official mass production reference design of the driver chip. The TON (on time) / TOFF (off time) separate output pins are connected to two sets of external gate resistors of 3Ω / 12Ω and 6Ω / 20Ω respectively. The 4-level gate resistor switching can be realized by configuring the channel enable through SPI.

[0044] This solution can be implemented as a calibration system, which runs on the main control MCU and adopts a hierarchical, progressive closed-loop control architecture, such as... Figure 2As shown, the calibration system 20 includes a real-time operating condition sensing layer 21, a parameter initial matching layer 22, a multi-constraint closed-loop adaptive correction layer 23, a dynamic operating condition feedforward prediction layer 24, an SPI register drive execution and feedback confirmation layer 25, and a full lifecycle aging adaptive compensation layer 26. Specifically: the real-time operating condition sensing layer 21 is used to collect the DC bus voltage, three-phase output current, junction temperature of the silicon carbide power module, and dynamic change rate of the operating condition of the silicon carbide electric drive system in real time to obtain the core state parameters of the current operating condition. The parameter initial matching layer 22 is used to match the subdivided operating condition corresponding to the current core state parameters according to a preset full-operating condition subdivision library, and retrieve the initial gate drive parameters corresponding to that subdivided operating condition. The multi-constraint closed-loop adaptive correction layer 23 is used to perform closed-loop adaptive correction of the gate drive parameters based on the initial gate drive parameters and with four automotive-grade hard specifications as insurmountable constraint boundaries, using an incremental PID algorithm. The dynamic operating condition feedforward prediction layer 24 is used to obtain torque commands and throttle pedal change rates from the vehicle controller via the vehicle's CAN bus, predicting dynamic operating conditions such as rapid acceleration, energy recovery switching, and overload 100ms in advance, and adjusting drive parameters accordingly. The SPI register drive execution and feedback confirmation layer 25 is used to write the optimal drive parameters into the corresponding register of the gate driver chip 27 via the SPI interface, synchronously complete the dead time configuration of the ePWM module of the main control MCU, and read the configuration confirmation frame to verify the configuration validity. The full life cycle aging adaptive compensation layer 26 is used to automatically trigger the self-learning process when a new car rolls off the production line, test the switching characteristics of the silicon carbide power module under more than three preset typical operating conditions, calibrate the exclusive initial parameter library for individual differences of adapter components, record the changes in the switching characteristics of the components in real time during vehicle operation, judge the degree of component aging online, automatically correct drive parameters, and compensate for the characteristic deviation caused by component aging.

[0045] Specifically, in the full-condition subdivision and grading library, based on the general characteristics of automotive-grade 1200V silicon carbide power modules, the entire electric drive operation scenario is divided into 96 subdivision conditions. The division rules are as follows: DC bus voltage includes three ranges: low voltage range (500V-650V), rated range (650V-750V), and high voltage range (750V-900V); load current includes four ranges: light load range (0-20% of rated current), medium load range (20%-50% of rated current), heavy load range (50%-100% of rated current). The four core state parameters are: current, overload range (100%-150% of rated current); module junction temperature includes four ranges: low temperature range (-40℃-25℃), normal temperature range (25℃-75℃), high temperature range (75℃-125℃), and over-temperature range (125℃-175℃); operating condition dynamic level includes two ranges: steady state range and dynamic range; the different ranges of the above four core state parameters are combined to form 96 subdivided operating conditions, each subdivided operating condition corresponds to a set of pre-calibrated initial gate drive parameters, which include gate resistance and dead time.

[0046] In addition, the SPI communication adopts a standard 4-wire mode, and the 6 gate driver chips corresponding to the six-phase bridge arms adopt a daisy-chain topology. The main control MCU completes the parameter configuration and status reading of all gate driver chips through one SPI bus. The modules of this calibration system can be deployed in a core-distributed manner. For example, the main control MCU includes four cores, namely core 0, core 1, core 2, and core 3. The real-time condition perception layer 21 and the parameter initial matching layer 22 run on core 0, the multi-constraint closed-loop adaptive correction layer 23 and the dynamic condition feedforward prediction layer 24 run on core 1, the SPI register drive execution and feedback confirmation layer 25 runs on core 2, and the full life cycle aging adaptive compensation layer 26 runs on core 3. In this way, interrupt response and task cycle can be independently optimized for each module to meet high real-time requirements and improve robustness.

[0047] In this scheme, the closed-loop adaptive correction process includes: S301, A 1ms hard interrupt was detected, and the cycle began; S302. Determine whether the 10ms global update flag has been updated. If yes, execute S303; otherwise, execute S304. The 10ms global update flag is set by a 10ms hardware timer interrupt. The multi-constraint closed-loop adaptive correction layer 23 performs a correction every 1ms and completes a full parameter update every 10ms. The 10ms global update flag can be considered as a trigger for the full parameter update. S303, Rematch 96 subdivision conditions, retrieve the corresponding initial gate drive parameters, clear the global update flag bit for 10ms, and then execute S305; S304. Load the gate drive parameters corrected in the previous cycle; S305. Real-time acquisition of closed-loop feedback parameters; wherein, the closed-loop feedback parameters include drain-source peak voltage, voltage change rate, single-cycle switching loss and module real-time junction temperature. S306. Load the preset safety constraint boundary; wherein, the safety constraint boundary includes a first-level fatal constraint and a second-level warning constraint. The first-level fatal constraint includes: drain-source peak voltage > 960V, voltage change rate > 15kV / μs, dead time < 500ns; the second-level warning constraint includes: module real-time junction temperature > 150℃, single-cycle switching loss 10% higher than the calibration value; S307. Determine if a Level 1 fatal constraint is triggered. If yes, execute S308; otherwise, execute 315. S308, Lockdown optimization process, only perform security optimization; S309. Determine if the dead time is less than 500ns. If yes, execute S310; otherwise, execute S311. S310, Force correction of dead time to 500ns, with dead time adjustment steps of 100ns, then execute S312; S311, Increase the gate resistance level by 1 step in a single step; when adjusting the gate resistance level, adjust in the order of 3Ω→6Ω→12Ω→20Ω, and do not skip levels; S312. Determine whether the correction triggers a first-level fatal constraint. If yes, execute S313; otherwise, execute S322. S313. Determine if the number of consecutive corrections is greater than 3. If yes, execute S314; otherwise, return 305. S314. Switch to default safety parameters, report the fault to the vehicle controller, and the cycle ends; in the default safety parameters, the gate resistance is 20Ω and the dead time is 1μs. S315. Determine whether a level 2 warning constraint has been triggered. If yes, execute S316; otherwise, execute S319. S316. Reduce dead time in single steps, with a step size of 100ns and a lower limit of 500ns; S317. Determine whether the correction triggers a level 2 warning constraint. If yes, execute S318; otherwise, execute S322. S318. Decrease the gate resistance level by 1 step in one step, then return to S317; when adjusting the gate resistance level, adjust in the order of 20Ω→12Ω→6Ω→3Ω, and do not skip levels; S319. Determine whether the 10ms global update flag has been updated. If yes, execute S320; otherwise, execute S322. S320: Calculate using an incremental PID algorithm with the goal of minimizing switching losses; S321. Adjust the gate resistance and dead time according to the adjustment amount calculated by the incremental PID algorithm. The gate resistance is adjusted by only one level at a time. For example, if the incremental PID algorithm calculates that the gate resistance needs to be reduced by two levels, such as from 12Ω to 3Ω, then it is forcibly limited to reducing by only one level, that is, from 12Ω to 6Ω. The dead time is adjusted by a maximum of 100ns at a time, with a lower limit of 500ns. S322, Parameter validity check; Among them, check whether the gate resistance is within 4 ranges and whether the dead time is within 500ns to 2μs. If the test results are both yes, it indicates that the parameter is valid. S323. Determine if the parameter is valid. If it is, execute S324; otherwise, execute S325. S324. Write the parameters into the register of the gate driver chip through the SPI interface, synchronously configure the dead time of the ePWM module of the main control MCU, and then execute S326. S325, roll back to the previous cycle's safety parameters; S326. Determine whether the configuration verification is successful. If yes, execute S328; otherwise, execute S327. S327. Determine whether the number of consecutive configuration failures is greater than or equal to 3. If yes, execute S314; otherwise, return to S324. S328. Determine if the 10ms period has been reached. If yes, execute S329; otherwise, execute S330. S329. Perform a convergence check to determine whether the parameters are stable and free from oscillations; S330, set the global update flag for 10ms, and the current cycle ends.

[0048] This embodiment has at least the following advantages: First, it effectively improves system performance, achieving the optimal balance of efficiency, EMC, and reliability under all temperature ranges, voltages, loads, and dynamic conditions. For example, compared to the traditional fixed-parameter solution under all operating conditions, this embodiment reduces switching losses by 12% and junction temperature by 8% under high-temperature heavy-load conditions; reduces voltage change rate by 25% and EMC radiated noise by 8dBμV / m under low-temperature light-load conditions; increases controller peak efficiency by 0.6%; and reduces drain-source peak voltage by 15% under dynamic conditions. Second, individual differences and batch dispersion of adapter components can reduce the workload of mass production line calibration and reduce the defect rate. Third, based on the full life cycle aging compensation mechanism, it can ensure that the vehicle's performance meets standards throughout its entire life cycle and reduce after-sales failure rate. Fourth, it can be fully adapted to multi-integrated high-integration electric drive architecture and can also suppress bearing electrochemical corrosion.

[0049] Corresponding to the embodiments of the aforementioned methods, this application also provides embodiments of a silicon carbide power module control device and a terminal thereof: like Figure 3 As shown, Figure 3 This is a block diagram of a silicon carbide power module control device provided in an embodiment of this application. The device is applied to a silicon carbide electric drive system; the device includes: The acquisition module 31 is used to acquire the initial gate drive parameters of the silicon carbide power module; wherein, the initial gate drive parameters include the initial gate resistance and the initial dead time; The correction module 32 is used to obtain the state feedback parameters of the silicon carbide power module and correct the initial gate drive parameters based on the state feedback parameters to obtain the target gate drive parameters; wherein, the state feedback parameters include drain-source peak voltage, voltage change rate, single-cycle switching loss and junction temperature of the silicon carbide power module; The transmission module 33 is used to transmit the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module, so that the gate drive chip drives the gate of the silicon carbide power module based on the target gate drive parameters.

[0050] The specific implementation process of the functions and roles of each module in the above device can be found in the implementation process of the corresponding steps in the above method, and will not be repeated here.

[0051] This application also provides an electronic device, please refer to [link to application]. Figure 4 , Figure 4 This is a structural block diagram of an electronic device provided in an embodiment of this application. The electronic device may include a processor 410, a communication interface 420, a memory 430, and at least one communication bus 440. The communication bus 440 is used to enable direct communication between these components. In this embodiment, the communication interface 420 of the electronic device is used for signaling or data communication with other node devices. The processor 410 may be an integrated circuit chip with signal processing capabilities.

[0052] The processor 410 described above can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), an off-the-shelf programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this application. The general-purpose processor can be a microprocessor, or the processor 410 can be any conventional processor.

[0053] The memory 430 may be, but is not limited to, random access memory (RAM), read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), etc. The memory 430 stores computer-readable instructions. When these computer-readable instructions are executed by the processor 410, the electronic device can perform the aforementioned operations. Figure 1 The various steps involved in the method implementation examples.

[0054] Alternatively, the electronic device may also include a storage controller and an input / output unit.

[0055] The memory 430, storage controller, processor 410, peripheral interface, and input / output unit are electrically connected directly or indirectly to achieve data transmission or interaction. For example, these components can be electrically connected to each other through one or more communication buses 440. The processor 410 is used to execute executable modules stored in the memory 430, such as software function modules or computer programs included in electronic devices.

[0056] The input / output unit is used to provide users with the ability to create tasks and to set optional start periods or preset execution times for those tasks, thereby enabling user-server interaction. The input / output unit may be, but is not limited to, a mouse and keyboard.

[0057] Understandable. Figure 4 The structure shown is for illustrative purposes only; the electronic device may also include components that are more advanced than those shown. Figure 4 The more or fewer components shown, or having the same Figure 4 The different configurations shown. Figure 4 The components shown can be implemented using hardware, software, or a combination thereof.

[0058] This application also provides a storage medium storing instructions. When the instructions are run on a computer, the computer program is executed by a processor to implement the method described in the method embodiment. To avoid repetition, the method will not be described again here.

[0059] This application also provides a computer program product that, when run on a computer, causes the computer to perform the method described in the method embodiment.

[0060] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can also be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods, and computer program products according to various embodiments of this application. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions marked in the blocks may occur in a different order than those marked in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram and / or flowchart, and combinations of blocks in block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.

[0061] In addition, the functional modules in the various embodiments of this application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0062] If the aforementioned functions are implemented as software functional modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0063] The above description is merely an embodiment of this application and is not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application. It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0064] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

[0065] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

Claims

1. A control method for a silicon carbide power module, characterized in that, Applied to silicon carbide electric drive systems; the method includes: Obtain the initial gate drive parameters of the silicon carbide power module; wherein, the initial gate drive parameters include the initial gate resistance and the initial dead time; The state feedback parameters of the silicon carbide power module are obtained, and the initial gate drive parameters are corrected based on the state feedback parameters to obtain the target gate drive parameters; wherein, the state feedback parameters include drain-source peak voltage, voltage change rate, single-cycle switching loss, and junction temperature; The target gate drive parameters are transmitted to the gate drive chip corresponding to the silicon carbide power module, so that the gate drive chip drives the gate of the silicon carbide power module based on the target gate drive parameters.

2. The method according to claim 1, characterized in that, The process of obtaining the initial gate drive parameters of the silicon carbide power module includes: The system acquires several core state parameters of the silicon carbide electric drive system, including: DC bus voltage, load current, junction temperature of the silicon carbide power module, and operating condition dynamic level; the operating condition dynamic level characterizes the degree of change in operating conditions of the silicon carbide electric drive system during operation. According to the preset full-condition subdivision and classification library, match the subdivision of the core state parameters and obtain the initial gate drive parameters corresponding to the subdivision of the working condition. The preset full-condition subdivision and grading library includes initial gate interval parameters corresponding to multiple subdivision conditions; the multiple subdivision conditions are obtained by setting multiple intervals for each core state parameter among the multiple core state parameters and combining all the different intervals of each core state parameter; each subdivision condition corresponds to a set of pre-calibrated initial gate drive parameters.

3. The method according to claim 1, characterized in that, The step of correcting the initial gate drive parameters based on the state feedback parameters includes: An incremental PID algorithm is used to optimize the initial gate drive parameters based on preset safety constraints, with the goal of minimizing the single-cycle switching loss. The preset safety constraints include: the drain-source peak voltage is less than or equal to the target voltage threshold; the voltage change rate is less than or equal to the target change rate threshold; the junction temperature is less than or equal to the target temperature threshold; and the dead time is greater than or equal to the target time threshold.

4. The method according to claim 3, characterized in that, At least one of the target voltage threshold, the target rate of change threshold, the target temperature threshold, and the target time threshold is dynamically adjusted according to the aging degree of the silicon carbide power module.

5. The method according to claim 1, characterized in that, Before transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module, the method further includes: Determine whether the target gate drive parameters are within the valid range; If the determination result is negative, the gate drive parameters of the silicon carbide power module are restored to the last valid configuration; The step of transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module is performed if the judgment result is yes.

6. The method according to claim 1, characterized in that, After transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module, the method further includes: Read the configuration confirmation frame of the gate driver chip, and verify the validity of the current configuration operation based on the configuration confirmation frame; If the verification fails, the configuration is deemed to have failed. The process of transmitting the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module, reading the configuration confirmation frame of the gate drive chip, and verifying the validity of the configuration operation based on the configuration confirmation frame is repeated, and the number of failures is accumulated. When the number of consecutive failures reaches a preset threshold, the gate drive parameters of the silicon carbide power module are switched to preset safety parameters, and the fault is reported to the vehicle controller.

7. The method according to claim 1, characterized in that, The step of obtaining the state feedback parameters of the silicon carbide power module and correcting the initial gate drive parameters based on the state feedback parameters to obtain the target gate drive parameters is executed in response to any of the following triggering conditions: Periodic hard interrupts were detected; Based on the vehicle controller signal of the vehicle where the silicon carbide electric drive system is located, it is detected that the vehicle is in a dynamic operating condition; The periodic hard interrupt has a first time period; the vehicle controller signal is read from the vehicle controller according to a second time period; the second time period is longer than the first time period.

8. A silicon carbide power module control device, characterized in that, Applied to silicon carbide electric drive systems; the device includes: An acquisition module is used to acquire the initial gate drive parameters of the silicon carbide power module; wherein, the initial gate drive parameters include the initial gate resistance and the initial dead time; A correction module is used to acquire the state feedback parameters of the silicon carbide power module and correct the initial gate drive parameters based on the state feedback parameters to obtain the target gate drive parameters; wherein, the state feedback parameters include drain-source peak voltage, voltage change rate, single-cycle switching loss and junction temperature of the silicon carbide power module; A transmission module is used to transmit the target gate drive parameters to the gate drive chip corresponding to the silicon carbide power module, so that the gate drive chip drives the gate of the silicon carbide power module based on the target gate drive parameters.

9. A computer-readable storage medium, characterized in that, It stores a computer program thereon, which, when executed by a processor, implements the method as described in any one of claims 1 to 7.

10. An electronic device, characterized in that, It includes a processor, a memory, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the method as described in any one of claims 1 to 7.

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