A radio frequency power amplifier control circuit and gate voltage control method

By employing a circuit structure combining a microcontroller and a gate signal in the RF power amplifier, the rise time of the gate voltage is shortened, solving the problem of RF pulse edge distortion caused by gate voltage control in the prior art, and realizing efficient and safe MRI imaging.

CN122394511APending Publication Date: 2026-07-14NAT INST OF ADVANCED MEDICAL DEVICES SHENZHEN
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NAT INST OF ADVANCED MEDICAL DEVICES SHENZHEN
Filing Date
2026-04-01
Publication Date
2026-07-14

AI Technical Summary

Technical Problem

Existing gate voltage control methods for RF power amplifiers, while balancing safety and stability, result in excessively long rise times for the gated pulse signal, leading to RF pulse edge distortion and affecting image quality.

Method used

A new circuit structure is adopted, which uses a microcontroller to collect protection feedback signals and gate control pulse signals, and then uses NAND gates to form gate voltage control signals, shortening the gate voltage gate rise time. Combined with hardware logic gates, nanosecond-level gate voltage switching is achieved.

Benefits of technology

It completely eliminates radio frequency pulse edge distortion, ensuring the efficient operation and safety of the radio frequency power amplifier, and improving the signal-to-noise ratio and repeatability of MRI images.

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Abstract

This invention relates to the field of magnetic resonance technology, specifically to a radio frequency (RF) power amplifier control circuit and gate voltage control method, comprising: a gate voltage level modulation circuit, a protection logic circuit, and a gate voltage selection switch; the protection logic circuit receives an external RF gate signal and a fault self-test signal from a microcontroller / hardware detection circuit, and outputs a control signal to the gate voltage selection switch after processing the two signals; the gate voltage selection switch, according to the control signal, applies the stable gate voltage output by the gate voltage level modulation circuit to the gate of the power amplifier tube, or quickly pulls the gate of the power amplifier tube to a low level / negative voltage, achieving nanosecond-level gate voltage switching and providing hardware-level real-time protection. This invention significantly improves the performance of the RF power amplifier by reconstructing the gate voltage drive circuit, and uses protection circuit detection and control pulse synchronization to compress the gate voltage rise time to the nanosecond level, completely eliminating the RF pulse edge distortion caused by the excessively long rise time of the control signal in traditional solutions.
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