A method for packaging the electrical signal lead-out end of a micro ceramic-based high-power heat-generating chip device

Abstract

The application provides a packaging method for an electrical signal lead-out end of a micro ceramic-based high-power heating chip device, and belongs to the technical field of chip device packaging, and comprises the following steps: a platinum metal layer is arranged above the electrical signal lead-out end of the micro ceramic-based high-power heating chip device; a first conductive thickening layer, a first conductive transition layer, a second conductive thickening layer, a second conductive transition layer and an insulating reinforcing layer are sequentially printed on the electrical signal lead-out end by using a prepared slurry, and one end of a prepared flat platinum strip is embedded in the semi-dried first conductive transition layer and the first conductive thickening layer to obtain a chip device containing the flat platinum strip; each layer structure is completely baked by high-temperature baking, and the packaging of the electrical signal lead-out end is completed; wherein the slurry is prepared from platinum powder and high-temperature-resistant glass powder. The application can effectively improve the high-temperature resistance of the electrical signal lead-out end of the micro ceramic-based high-power heating chip device and improve the connection stability of the electrical signal lead-out end.

Description

Technical Field

[0001] This invention relates to a method for packaging the electrical signal output terminals of a micro ceramic-based high-power heating chip device, belonging to the field of chip device packaging technology. Background Technology

[0002] As ceramic-based electronic components become increasingly miniaturized and lightweight, ceramic-based micro high-power chip devices with built-in heaters face the challenge of high-temperature packaging due to internal heat generation. The input and output signal leads of these heat-generating devices are characterized by high temperatures and small sizes (typically less than 1.5mm*1.5mm*1mm, and PADs typically less than 0.5mm*0.5mm). These characteristics create significant technological constraints on the packaging of this type of device. Conventional heat-generating devices typically operate at temperatures not exceeding 400℃. The surface PADs of ceramic devices are generally metallized with Au / Ag, then plated with Ni and Au layers to improve solderability and solder resistance. Finally, surface electrical signals are led out via gold wire bonding. However, high-power heat-generating chip ceramic devices operate in environments around 600℃ for extended periods. Existing metal materials cannot withstand this high temperature for long periods, and current packaging methods cannot achieve a stable and reliable packaging effect at 600°C. Summary of the Invention

[0003] The purpose of this invention is to provide a packaging method for the electrical signal lead of a micro ceramic-based high-power heating chip device. By using special paste and multilayer film structure, the high-temperature resistance of the electrical signal lead of the micro ceramic-based high-power heating chip device is effectively improved, and the connection stability of the electrical signal lead is enhanced.

[0004] To achieve the above objectives / to solve the above technical problems, the present invention is implemented using the following technical solution: This invention provides a method for packaging the electrical signal output terminals of a miniature ceramic-based high-power heating chip device, comprising the following steps: A platinum metal layer is placed above the electrical signal output terminal of a micro ceramic-based high-power heating chip device; A first conductive thickened layer is formed by printing a pre-made paste over the platinum metal layer, and the first conductive thickened layer is baked to a semi-dry state. A first conductive transition layer is formed by printing a pre-made paste on top of the first conductive thickened layer, and the first conductive transition layer is baked to a semi-dry state. One end of a pre-fabricated flat platinum strip is embedded in a semi-dry first conductive transition layer and a first conductive thickening layer to obtain a chip device containing a flat platinum strip. A second conductive thickened layer is formed by printing a pre-made paste over one end of the flat platinum strip. The first conductive transition layer, the first conductive thickened layer, and the second conductive thickened layer are baked until completely dry. A second conductive transition layer is formed by printing a pre-made paste on top of the second conductive thickened layer, and the second conductive transition layer is baked until completely dry. An insulating reinforcement layer is formed by printing a pre-made paste on top of the second conductive transition layer, and the insulating reinforcement layer is baked until completely dry to complete the encapsulation of the electrical signal lead-out terminal. The slurry is prepared using platinum powder and high-temperature resistant glass powder.

[0005] Optionally, in the slurry, the proportion of platinum powder ranges from 90wt% to 95wt%, and the proportion of high-temperature resistant glass powder ranges from 5wt% to 10wt%.

[0006] Optionally, the thickness of the first conductive thickened layer, the first conductive transition layer, the second conductive thickened layer, and the second conductive transition layer can be in the range of 40~60μm.

[0007] Optionally, the first conductive thickened layer and the first conductive transition layer are baked at a temperature range of 70~80℃ for 10min-15min to bring the first conductive thickened layer and the first conductive transition layer to a semi-dry state.

[0008] Optionally, the first conductive thickened layer, the first conductive transition layer, the second conductive thickened layer, and the second conductive transition layer are baked at a temperature range of 70~80℃ for 20min~30min to ensure that the first conductive thickened layer, the first conductive transition layer, the second conductive thickened layer, and the second conductive transition layer are in a completely dry state.

[0009] Optionally, the thickness of the insulating reinforcement layer is in the range of 40~50μm.

[0010] Optionally, the insulating reinforcement layer can be baked at a temperature range of 70~80℃ for 10 minutes to ensure that the insulating reinforcement layer is completely dry.

[0011] Optionally, the flat platinum strip is formed by stretching platinum metal, and the flat platinum strip includes a long strip of wire, one end of which is a flat, circular structure.

[0012] Compared with the prior art, the beneficial effects achieved by the present invention are as follows: This invention proposes a method for packaging the electrical signal output terminals of a micro-ceramic-based high-power heating chip device. A paste is prepared using platinum powder and high-temperature resistant glass powder, and a multilayer film structure is printed on the electrical signal output terminals using this paste. A flat platinum strip is then used as an external conductor and fixedly connected to the electrical signal output terminals, thus achieving packaging. This invention effectively improves the high-temperature resistance of the electrical signal output terminals of the micro-ceramic-based high-power heating chip device and enhances the connection stability of the electrical signal output terminals through the high-temperature resistance of platinum powder and the multilayer film structure design, thereby solving the problem of packaging the electrical signal output terminals of high-power heating ceramic-based chip devices. Attached Figure Description

[0013] Figure 1 The diagram shows the steps of a method for packaging the electrical signal output terminal of a micro ceramic-based high-power heating chip device according to an embodiment of the present invention. Figure 2 The diagram shown is a schematic diagram of the electrical signal lead-out terminal packaging structure in an embodiment of the present invention; Figure 3 The diagram shown is a schematic diagram of the electrical signal output terminal of the micro ceramic-based high-power heating chip device in an embodiment of the present invention. Figure 4 This is a schematic diagram of a miniature ceramic-based high-power heating chip device after packaging, as described in an embodiment of the present invention. In the figure, 1 is the platinum metal layer, 2 is the first conductive thickened layer, 3 is the first conductive transition layer, 4 is the flat platinum strip, 5 is the second conductive thickened layer, 6 is the second conductive transition layer, 7 is the insulating reinforcement layer, 8 is the ceramic substrate, 9 is the surface lead-out terminal of the internal circuit, 10 is the internal circuit, 11 is the heating element, and 12 is the surface lead-out terminal of the heating element. Detailed Implementation

[0014] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the embodiments of the present invention and the specific features in the embodiments are detailed descriptions of the technical solution of the present invention, rather than limitations thereof. In the absence of conflict, the embodiments of the present invention and the technical features in the embodiments can be combined with each other.

[0015] This embodiment describes a method for packaging the electrical signal output terminals of a miniature ceramic-based high-power heating chip device, such as... Figure 1 , 2 As shown, the specific steps include the following: Step 1: Place a platinum metal layer 1 above the electrical signal output terminal of the micro ceramic-based high-power heating chip device.

[0016] To address the issues of conductivity, oxidation resistance, and corrosion resistance during long-term operation at high temperatures (~600℃), this invention involves printing a layer of platinum metal onto the signal output terminals of a micro-ceramic-based high-power heating chip device. After high-temperature sintering, the platinum metal layer adheres to the surface of the ceramic substrate 8 of the chip device, forming a platinum metal layer. This platinum metal layer leads the internal electrical signals of the device to the surface of the chip.

[0017] Step 2: Using pre-made paste, a first conductive thickened layer 2 is formed by printing on top of the platinum metal layer.

[0018] In this embodiment of the invention, in order to achieve long-term high-temperature resistance, a slurry is prepared using platinum powder and a small amount of high-temperature glass powder, and the welding temperature of the prepared slurry is higher than 900°C.

[0019] The specific ratio of the slurry is: 90wt%~95wt% platinum powder and 5wt%~10wt% high-temperature resistant glass powder.

[0020] Step 201: Print paste on top of the platinum metal layer to form a first conductive thickened layer. The thickness of the first conductive thickened layer is printed to 40~60μm.

[0021] Step 202: Bake the chip device containing the first conductive thickened layer at 70~80℃ for 10min-15min to bring the first conductive thickened layer to a semi-dry state, and then proceed to the next step. The semi-dry slurry film layer has a certain ability to withstand stress and deformation, but it will not flow and diffuse.

[0022] Step 3: Using the pre-made paste, a first conductive transition layer 3 is formed by printing on top of the first conductive thickened layer. The thickness of the first conductive transition layer is printed to 40~60μm, and the first conductive transition layer is baked to a semi-dry state using the same baking temperature and time as in step 202.

[0023] Step 4: Embed one end of the flat platinum strip 4 into the semi-dry first conductive transition layer and the first conductive thickened layer to obtain a chip device containing the flat platinum strip. Because the semi-dry stacked film is thick and has a certain degree of deformability, it can be well embedded into the flat platinum strip.

[0024] This invention involves drawing platinum into a long strip-shaped wire, with one end of the wire formed into a circular disc. This long strip-shaped conductive strip is a flat platinum strip. Because the flat platinum strip has a strip-shaped planar structure with one flat end, when the conductive transition layer and conductive thickening layer are embedded, the contact area with the film layer is large, resulting in better adhesion.

[0025] Step 5: Using the pre-prepared paste, a second conductive thickened layer 5 is printed on top of the flat platinum strip. The thickness of the second conductive thickened layer is printed to 40~60μm. The chip device is baked at 70~80℃ for 20min~30min to thoroughly dry all the pastes of the first conductive thickened layer, the second conductive thickened layer, and the first conductive transition layer.

[0026] Step 6: Using the pre-made paste, print the second conductive transition layer 6 on top of the second conductive thickened layer. The thickness of the second conductive transition layer is printed to 20~30μm. Bake at 70~80℃ for 10min to completely dry the second conductive transition layer.

[0027] Step 7: Using the pre-made paste, print an insulating reinforcement layer 7 on top of the second conductive transition layer. The insulating reinforcement layer needs to completely cover the other film layers. The film thickness of the insulating reinforcement layer is 40~50μm. Bake at 70~80℃ for 10 minutes to thoroughly dry the insulating reinforcement layer and complete the packaging of the electrical signal lead-out terminal of the chip device.

[0028] In this embodiment of the invention, since the glass powder in the slurry has good wettability, the insulating reinforcement layer can form a thicker insulating layer on the upper surface of other film layers after sintering. The insulating layer is firmly bonded to the ceramic substrate of the chip device and other film layers, and can firmly seal the lower 5 layers of conductor material onto the ceramic substrate.

[0029] In this embodiment of the invention, the electrical signal output terminals of the micro ceramic-based high-power heating chip device are divided into an internal circuit surface output terminal 9 and a heating element surface output terminal 12, which are respectively connected to the internal circuit 10 and the heating element 11 of the device, such as... Figure 3 As shown.

[0030] After the electrical signal lead-out terminals are packaged, the chip device is as follows: Figure 4 As shown, this invention uses platinum powder and high-temperature resistant glass powder to prepare a paste, and prints a multilayer film structure on the electrical signal lead-out end using the paste. A flat platinum strip is made using platinum metal as an external conductor and is fixedly connected to the electrical signal lead-out end, thereby achieving the encapsulation of the electrical signal lead-out end. This invention can effectively improve the high-temperature resistance of the electrical signal lead-out end of the micro ceramic substrate high-power heating chip device and improve the connection stability of the electrical signal lead-out end through the high-temperature resistance characteristics of platinum powder itself and the multilayer film structure design, thus solving the problem of electrical signal lead-out encapsulation of high-power heating ceramic substrate chip devices.

[0031] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims. All of these forms are within the protection scope of the present invention.

Claims

1. A method for packaging the electrical signal output terminals of a micro ceramic-based high-power heating chip device, characterized in that, Includes the following steps: A platinum metal layer is placed above the electrical signal output terminal of a micro ceramic-based high-power heating chip device; A first conductive thickened layer is formed by printing a pre-made paste over the platinum metal layer, and the first conductive thickened layer is baked to a semi-dry state. A first conductive transition layer is formed by printing a pre-made paste on top of the first conductive thickened layer, and the first conductive transition layer is baked to a semi-dry state. One end of a pre-fabricated flat platinum strip is embedded in a semi-dry first conductive transition layer and a first conductive thickening layer to obtain a chip device containing a flat platinum strip. A second conductive thickened layer is formed by printing a pre-made paste over one end of the flat platinum strip. The first conductive transition layer, the first conductive thickened layer, and the second conductive thickened layer are baked until completely dry. A second conductive transition layer is formed by printing a pre-made paste on top of the second conductive thickened layer, and the second conductive transition layer is baked until completely dry. An insulating reinforcement layer is formed by printing a pre-made paste on top of the second conductive transition layer, and the insulating reinforcement layer is baked until completely dry to complete the encapsulation of the electrical signal lead-out terminal. The slurry is prepared using platinum powder and high-temperature resistant glass powder.

2. The electrical signal lead-out packaging method according to claim 1, characterized in that, In the slurry, the proportion of platinum powder ranges from 90wt% to 95wt%, and the proportion of high-temperature resistant glass powder ranges from 5wt% to 10wt%.

3. The electrical signal lead-out packaging method according to claim 1, characterized in that, The thickness of the first conductive thickened layer, the first conductive transition layer, the second conductive thickened layer, and the second conductive transition layer ranges from 40 to 60 μm.

4. The electrical signal lead-out packaging method according to claim 3, characterized in that, The first conductive thickened layer and the first conductive transition layer are baked at a temperature range of 70~80℃ for 10min-15min to bring them to a semi-dry state.

5. The electrical signal lead-out packaging method according to claim 3, characterized in that, The first conductive thickened layer, the first conductive transition layer, the second conductive thickened layer, and the second conductive transition layer are baked at a temperature range of 70~80℃ for 20min~30min to ensure that the first conductive thickened layer, the first conductive transition layer, the second conductive thickened layer, and the second conductive transition layer are completely dry.

6. The method for encapsulating electrical signal leads according to claim 1, characterized in that, The thickness of the insulating reinforcement layer ranges from 40 to 50 μm.

7. The electrical signal lead-out packaging method according to claim 6, characterized in that, The insulating reinforcement layer is baked at a temperature range of 70~80℃ for 10 minutes to ensure that the insulating reinforcement layer is completely dry.

8. The method for encapsulating electrical signal leads according to claim 1, characterized in that, The flat platinum strip is formed by stretching platinum metal and includes a long strip of wire, one end of which is a flat, circular structure.

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