Semiconductor device and method of manufacturing the same

By using amorphous germanium-silicon layers and crystalline germanium-silicon layers as conductive layers in semiconductor devices, the problem of premature sealing of conductive layers is solved, thereby improving the electrical and conductive performance of capacitors.

CN122395942APending Publication Date: 2026-07-14FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
Filing Date
2026-04-20
Publication Date
2026-07-14

AI Technical Summary

Technical Problem

In semiconductor devices, the conductive layer of a recessed gate structure is prone to premature sealing during the formation process, which leads to a decrease in the performance of the capacitor structure and affects its electrical performance.

Method used

An amorphous germanium-silicon layer and a crystalline germanium-silicon layer are used as conductive layers. The amorphous germanium-silicon layer covers the top electrode, and the crystalline germanium-silicon layer covers the amorphous germanium-silicon layer. The amorphous germanium-silicon layer grows non-directionally to fill narrow positions, and the crystalline germanium-silicon layer is rapidly filled according to a specific crystal orientation to form a complete conductive layer.

Benefits of technology

This improves the electrical and conductivity properties of the capacitor, reduces the premature sealing problem caused by the conductive layer growing too fast between the bottom electrodes, and yields a high-quality, low-resistance conductive film.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122395942A_ABST
    Figure CN122395942A_ABST
Patent Text Reader

Abstract

The application provides a semiconductor device and a preparation method thereof. The semiconductor device comprises a substrate and a capacitor structure. The capacitor structure is located on the substrate. The capacitor structure comprises a bottom electrode extending in a direction perpendicular to the substrate, a capacitor dielectric layer covering the bottom electrode, a top electrode located on the capacitor dielectric layer, and a conductive layer located on the top electrode. The conductive layer comprises an amorphous germanium-silicon layer and a crystalline germanium-silicon layer. The amorphous germanium-silicon layer covers the top electrode, and the crystalline germanium-silicon layer covers the amorphous germanium-silicon layer. The application can improve the electrical performance of the capacitor and the conductive performance.
Need to check novelty before this filing date? Find Prior Art