A drift step recovery diode with a hybrid anode structure

By introducing a hybrid anode structure, including an N-type anode region, a P-type anode region, and a Schottky contact, into the drift step recovery diode, and combining it with a JFET structure, the problems of high manufacturing difficulty and high cost caused by the superjunction structure are solved, achieving fast turn-off and high-efficiency pulse performance.

CN122395967APending Publication Date: 2026-07-14UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Filing Date
2026-06-10
Publication Date
2026-07-14

AI Technical Summary

Technical Problem

Existing drift step recovery diodes (DSRDs) are difficult and costly to manufacture in superjunction structures, and have long reverse recovery times, which affect device performance.

Method used

A hybrid anode structure is adopted, including an N-type anode region, a P-type anode region, a Schottky contact, and a JFET structure. Through synergistic effects, carrier injection and conductivity are controlled, excessive stored charge is avoided, and the reverse recovery time is shortened.

Benefits of technology

It achieves fast turn-off, high dV/dt, low reverse recovery loss and high pulse efficiency, reduces manufacturing difficulty and cost, and improves the device's forward conduction capability and reverse recovery speed.

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Abstract

The application belongs to the technical field of semiconductor, and particularly provides a drift step recovery diode with a mixed anode structure, which is used to solve the problems of high manufacturing difficulty and high manufacturing cost caused by the super junction structure in the existing drift step recovery diode. In the anode structure, an N-type anode region 8 is introduced, which, together with a first P-type lightly doped layer 10 and an N-type drift region 4, forms a parasitic NPN transistor. Meanwhile, between the N-type anode region 8 and a P-type anode region 11, a Schottky contact diode is formed by the anode metal 1 and the first P-type lightly doped region 10. The first P-type lightly doped region 10, a second P-type lightly doped region 5 and the N-type drift region 4 constitute a junction field effect transistor. Through the NPN transistor, the junction field effect transistor and the Schottky contact diode, the drift step recovery diode is optimized in coordination, and the pulse performance of the drift step recovery diode is significantly improved without using the super junction structure.
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