A near-infrared enhanced self-driven photodetector with a semi-metallic phase molybdenum telluride as an absorbing layer

By using molybdenum telluride, a semi-metallic phase, as the light-absorbing layer in the photodetector and forming a Schottky junction with semiconductor photoelectric materials, the problem of insufficient detection capability in the near-infrared band of traditional photodetectors is solved, realizing high sensitivity and wide spectral response of the self-driven photodetector, which is suitable for portable devices and environmental monitoring.

CN122396068APending Publication Date: 2026-07-14GUANGXI UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GUANGXI UNIV
Filing Date
2026-02-28
Publication Date
2026-07-14

AI Technical Summary

Technical Problem

Existing self-driven photodetectors have limited detection capabilities in the near-infrared band, and traditional photodetectors have low light responsivity in the near-infrared band, making it difficult to meet the requirements for high-sensitivity detection. Furthermore, 1T′-MoTe2 material has not been fully utilized in the light absorption layer.

Method used

Molybdenum telluride (1T′-MoTe2), a semi-metallic phase, is used as the light-absorbing layer to form a Schottky junction with semiconductor optoelectronic materials. By utilizing its strong absorption and interband excitation transition properties in the near-infrared band, the separation and collection of photogenerated carriers are realized, forming a self-driven photodetector.

Benefits of technology

It significantly enhances the detection capability of photodetectors in the near-infrared band, reduces dependence on external power supply, improves the independence and portability of the device, and has broad-spectrum absorption and efficient carrier separation capabilities, making it suitable for low-light and high-contrast imaging tasks.

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Abstract

The application discloses a near-infrared enhanced self-driven photodetector with a band gap-free semimetal phase molybdenum ditelluride (1T'-MoTe2) as an optical absorption layer, which comprises a semimetal phase molybdenum ditelluride optical absorption layer, a semiconductor photoelectric material layer, a top electrode and a bottom electrode, and has the ability of enhancing self-driven near-infrared detection. The device aims to break the dependence of traditional semiconductor photoelectric devices on the band gap, break the limitation that traditional semiconductor photodetectors can only detect optical signals with photon energy greater than the band gap, enable conventional ultraviolet and visible light photodetectors to have the detection capability in the near-infrared wave band, and realize self-driven detection without external power supply, thereby being suitable for expanding the near-infrared detection performance of various ultraviolet and visible light semiconductor photodetectors.
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