Preparation method of paclitaxel modified MoS2 photoelectric detector

By forming covalent bonds between paclitaxel and MoS2, paclitaxel-modified MoS2 photodetectors were prepared, which solved the performance problem of insufficient MoS2 photodetectors caused by structural defects. This achieved efficient carrier migration and low-noise photodetection, and promoted the development of biosensors.

CN122396093APending Publication Date: 2026-07-14YUNNAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
YUNNAN UNIV
Filing Date
2026-04-14
Publication Date
2026-07-14

AI Technical Summary

Technical Problem

Existing MoS2 photodetectors suffer from low carrier mobility, high noise power spectral density, and insufficient detectivity due to structural defects. Furthermore, existing organic molecule modification strategies have limited effectiveness and are difficult to achieve efficient bipolar modification for both n-type and p-type structures.

Method used

Paclitaxel-modified MoS2 photodetectors were prepared by forming Mo-O covalent bonds between paclitaxel molecules and MoS2. n-type or p-type MoS2 films were grown on SiO2 substrates using one-step and two-step methods, and paclitaxel was coated on the surface to form stable interfacial interactions.

Benefits of technology

It significantly improves carrier mobility and detectivity, reduces noise, and enables the fabrication of high-performance photodetectors. At the same time, paclitaxel, as a biological anticancer molecule, promotes the development of biosensors.

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Abstract

This invention discloses a paclitaxel-modified MoS2 photodetector and its fabrication method, belonging to the field of two-dimensional material optoelectronic device technology. The detector consists of a SiO2 substrate, a monolayer MoS2 film, a paclitaxel layer, and an Ag electrode, arranged sequentially. Paclitaxel molecules form Mo-O covalent bonds with Mo atoms through hydroxyl groups, and simultaneously interact with MoS2 through a conjugated aromatic ring structure, achieving efficient passivation of sulfur vacancy defects without disrupting the intrinsic lattice of MoS2. The fabrication method includes four main steps: substrate pretreatment, preparation of monolayer n-type and p-type MoS2 films, paclitaxel solution drop-coating modification, and high-vacuum evaporation of Ag electrodes. This invention has strong universality, enabling simultaneous n-type and p-type bipolar modification. Paclitaxel modification of MoS2 significantly improves the device's detectivity and field-effect mobility while significantly reducing device noise. The fabrication process is simple and controllable, involves non-destructive modification, and is easy to scale up, making it widely applicable in fields such as photodetection, micro-optoelectronic devices, and two-dimensional material optoelectronic integrated systems.
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