Perovskite solar cell for space and method of manufacturing the same
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU SHENGKAI NEW ENERGY TECH CO LTD
- Filing Date
- 2026-06-11
- Publication Date
- 2026-07-14
Smart Images
Figure CN122396151A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a perovskite solar cell for space use and its preparation method, belonging to the field of photovoltaics. Background Technology
[0002] Perovskite solar cells offer advantages over traditional solar cell materials, including higher theoretical limits, lower material consumption, and lighter weight, making them a key emerging material in the space photovoltaic field. However, the space environment is far more severe than the terrestrial environment, requiring the application of materials to withstand challenges such as high-energy particle irradiation, atomic oxygen erosion, ultra-high and ultra-low temperature thermal cycling, and vacuum contamination. Compared to traditional silicon and GaAs cells, existing perovskite solar cell materials are more sensitive to high-energy radiation. In particular, perovskite exhibits poor irradiation stability; high-energy particle irradiation in space leads to increased lattice defects and intensified ion migration, resulting in a significant decrease in photoelectric conversion efficiency (PCE) after electron irradiation. These issues present challenges for the space utilization of perovskite solar cells. Summary of the Invention
[0003] In order to improve the tolerance of perovskite solar cells to high-energy radiation, this invention provides a space-use perovskite solar cell, which improves the high-energy radiation tolerance of the cell by adding cerium oxide to the perovskite bulk material.
[0004] The technical solution adopted in this invention is as follows: a perovskite solar cell for space use, comprising a hole transport layer, a perovskite layer, and an electron transport layer. The perovskite layer generates holes and free electrons under photoexcitation. Holes enter the hole transport layer, and free electrons enter the electron transport layer. The perovskite layer comprises the perovskite bulk material ABX3 and cerium oxide, wherein A is a monovalent organic cation and / or an inorganic cation, B is a divalent metal cation, and X is a monovalent halide anion.
[0005] As a preferred embodiment, the cerium oxide particle size in the perovskite layer is 3~5 nm, and the cerium oxide content in the perovskite layer is 0.5~1.0 wt%.
[0006] As a preferred embodiment, an interface passivation layer is provided between the perovskite layer and the electron transport layer, and the interface passivation layer is doped with cerium.
[0007] As a preferred embodiment, the cerium element in the interface passivation layer exists in the form of cerium oxide. The interface passivation layer is a composite layer formed by M1 / M2 / M3, where M1 is PEA2PbI4 or BA2PbI4, M2 is CsPbI2Br, CsPbIBr2 or FAPbI3, and M3 is CeO2. The mass ratio of M1, M2 and M3 is (4~6):(2~4):(1~3).
[0008] As a preferred embodiment, the interface passivation layer is a composite layer formed by mixing ternary materials, which can be a PEA2PbI4 / CsPbI2Br / CeO2 composite layer, a PEA2PbI4 / FAPbI3 / CeO2 composite layer, or a BA2PbI4 / CsPbIBr2 / CeO2 composite layer.
[0009] As a preferred embodiment, A is FA. + MA + Cs + A combination of one or more of them, and A contains at least Cs. + B is Pb 2+ X is I - and Br - The combination of .
[0010] As a preferred embodiment, the electron transport layer is doped with cerium oxide, and the electron transport layer is a coating formed by mixing cerium oxide with an electron transport bulk material, wherein the electron transport bulk material is tin oxide or aluminum oxide.
[0011] The present invention also provides a method for preparing the above-mentioned perovskite solar cell for space use, comprising preparing a perovskite layer, wherein the method for preparing the perovskite layer specifically includes: a. A perovskite precursor solution is prepared by mixing the perovskite bulk material ABX3 and cerium oxide in a solvent, wherein the concentration of the perovskite bulk material ABX3 in the perovskite precursor solution is 1.0~1.8 M; b. Coat the perovskite precursor solution to form a film; thus obtaining the perovskite layer.
[0012] The beneficial effects of this invention include: This invention improves the high-energy radiation tolerance of the battery by adding cerium oxide to the perovskite layer. The high atomic number of Ce in the cerium oxide and the high Ce-O bond formed with oxygen atoms effectively improve the perovskite layer's resistance to high-energy particles. Furthermore, Ce has reversible redox pairs of trivalent and tetravalent valence, which can capture free electrons generated by radiation, suppress nonradiative recombination and color center formation, and increase carrier lifetime.
[0013] This invention uses a composite layer of M1 / M2 / M3 as an interface passivation layer. M1 is selected from PEA2PbI4 or BA2PbI4, M2 is selected from CsPbI2Br, CsPbIBr2 or FAPbI3, and M3 is selected from CeO2. This allows the interface passivation layer to form a 2D / 3D structure to achieve passivation. Together with the perovskite layer, the PCE of the perovskite solar cell can still be maintained above 90% under 1 MeV electron and 0.05 MeV proton irradiation conditions. Attached Figure Description
[0014] Figure 1 Schematic diagram of perovskite solar cell structure; Figure 2 Irradiation stability test results; Figure 3 Thermal cycling stability test curves from -40 ℃ to 120 ℃; Figure 4 Atomic oxygen exposure test curve. Detailed Implementation
[0015] The present invention is described in more detail below, but it should not be construed as limiting the scope of protection of the invention to the following description. Unless otherwise specified, any range described in the present invention includes end values, any values between end values, and any sub-ranges formed by end values or any values between end values. There are no particular limitations on the purity of any raw materials used in the present invention; however, analytical grade materials are preferred. The sources and abbreviations of all raw materials used in the present invention are conventional sources and abbreviations in the art, and are clearly understood within the scope of their relevant uses. Those skilled in the art can obtain them from commercially available sources or prepare them using conventional methods based on the abbreviations and corresponding uses.
[0016] "At least one" means one or more, while "more" means two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can mean: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can mean: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a, b, and c, where a, b, and c can be single or multiple.
[0017] The space perovskite solar cell of this invention, such as Figure 1As shown, the battery includes a conductive substrate 1, a battery body 2, and a packaging panel 3. The battery body 2 includes a hole transport layer 21, a perovskite layer 22, an interface passivation layer 23, an electron transport layer 24, and an electrode 25. The perovskite layer 22 generates holes and free electrons under photoexcitation. Holes enter the hole transport layer 21, and free electrons enter the electron transport layer 24. The perovskite layer 22 comprises a perovskite bulk material ABX3 and cerium oxide. A is a monovalent organic cation and / or a monovalent inorganic cation, B is a divalent metal cation, and X is a monovalent halide anion. By doping the perovskite bulk material with cerium oxide, preferably cerium oxide, on the one hand, cerium oxide can improve the radiation resistance without affecting the photoelectric properties of the perovskite. Cerium has a high bonding energy with oxygen, making it less prone to lattice abrupt changes when facing high-energy particles, thus suppressing point defects such as vacancies and interstitial spaces; and Ce has redox pairs between trivalent and tetravalent valences, suppressing nonradiative recombination and color center formation. On the other hand, cerium oxide (CeO)... X CeO₂, as an internal additive, can passivate defects, inhibit ion migration, and improve battery efficiency, mainly manifested in CeO₂. X Pb preferentially accumulates at grain boundaries and is passivated by Lewis acid-base interactions. 2+ I - This reduces the nonradiative recombination rate; Ce-O bonds can anchor grain boundaries, inhibit ion migration, and reduce phase segregation and crystal plane degradation at the interface. Furthermore, doping CeO into the perovskite layer... X It can also enhance the crystallinity of the perovskite layer, increase crystal density, and improve carrier extraction rate.
[0018] In this invention, the preferred doping amount of cerium oxide is 0.5~1.0 wt%. At this dosage, the cerium oxide forms a continuous but not dense network, dispersed at the perovskite grain boundaries to passivate defects and protect the grain boundaries, but without forming a continuous conductive path. The preferred cerium oxide is cerium oxide (CeO2).
[0019] In this invention, an interface passivation layer 23 is provided between the perovskite layer 22 and the electron transport layer 24, and cerium oxide is doped therein, so that the interface passivation layer 23 is permeable by Ce. 3+ / Ce 4+ Reversible redox capture of irradiated holes / electrons suppresses color center formation. Preferably, the cerium oxide doped in the interface passivation layer 23 is cerium oxide (CeO2), and the interface passivation layer 23 is a composite layer formed by M1 / M2 / M3, where M1 is PEA2PbI4 or BA2PbI4, M2 is CsPbI2Br, CsPbIBr2, or FAPbI3, and M3 is CeO2. This configuration not only allows for the formation of a 2D passivation layer using PEA2PbI4 (phenylethyl ammonium lead iodide) or BA2PbI4 (butyl ammonium lead iodide), but also suppresses I... -Migration and surface defects are mitigated by using CsPbI2Br, CsPbIBr2, or FAPbI3 to enhance interfacial thermal stability and atomic oxygen resistance; these materials can also reduce and capture irradiated carriers; the interfacial passivation layer not only improves battery stability but also enhances the battery's photoelectric efficiency. More preferably, the mass ratio of M1, M2, and M3 is (4~6):(2~4):(1~3). Even more preferably, the interfacial passivation layer is a PEA2PbI4 / CsPbI2Br / CeO2 composite layer, a PEA2PbI4 / FAPbI3 / CeO2 composite layer, or a BA2PbI4 / CsPbIBr2 / CeO2 composite layer. This type of interfacial passivation layer is disposed between the electron transport material and the Cs-containing... + A gradient band structure is constructed between the lead-based perovskite layers at the interface of the light-absorbing layer and the electron transport layer, which promotes the extraction and transport of photogenerated electrons and effectively suppresses the recombination of interfacial carriers, thereby improving the stability of the battery and further optimizing the photoelectric conversion efficiency.
[0020] The preferred hole transport material of this invention is NiO. X This hole transport material is beneficial for improving the stability of the battery in high-irradiation environments, and is applicable to the Cs-containing components of this invention. + The lead-based perovskite material not only improves battery stability but also optimizes energy level matching and enhances carrier transport efficiency; the thickness of the hole transport layer is preferably 20~30 nm, and the preferred deposition method is magnetron sputtering.
[0021] The substrate or encapsulation panel in this invention can be flexible or rigid. If flexible, it can be transparent polyimide with a thickness of 50-100 μm and a bending radius ≤10 mm. Rigidity is preferred, and Al2O3 ceramic substrate is even more preferred due to its high mechanical strength and thermal conductivity greater than 20 W / (m·K). After encapsulation, it can also provide overall insulation and sealing for the battery, further improving its durability. Before use, the substrate or encapsulation panel needs to be ultrasonically cleaned with EtOH and H2O for 10 min each, and dried at 120 °C for 30 min to improve heat dissipation efficiency and adapt to extreme temperature environments.
[0022] The preparation method of the space perovskite solar cell in this invention includes the following steps: (1) Pretreatment of battery substrate A rigid Al2O3 ceramic substrate is preferred, which is obtained by ultrasonic cleaning and drying.
[0023] (2) Preparation of the battery body A hole transport layer, a perovskite layer, an interface passivation layer, an electron transport layer, and an electrode layer are sequentially deposited on a battery substrate.
[0024] Specifically, it includes: a. Deposit a hole transport layer, the hole transport layer (HTL) being NiO prepared by magnetron sputtering. X Layer, 20~30 nm thick.
[0025] b. Deposit a perovskite layer, the perovskite layer being FA. 0.8 MA 0.15 Cs 0.05 Pb(I 0.85 Br 0.15 )3 Doped with 0.5~1.0 wt% CeO2 nanoparticles, with a CeO2 nanoparticle size of 3~5 nm and a perovskite layer thickness of 400~800 nm; the perovskite layer can be prepared by solution spin coating, blade coating or slot coating, and can be prepared in one step or two steps.
[0026] c. Prepare an interface passivation layer, which can be a PEA2PbI4 / CsPbI2Br / CeO2 nanocomposite layer, or a PEA2PbI4 / FAPbI3 / CeO2 or BA2PbI4 / CsPbIBr2 / CeO2 nanocomposite layer (BA is butylammonium). The preparation method is as follows: PEA2PbI4 or BA2PbI4, CsPbI2Br or CsPbIBr2 or FAPbI3, and CeO2 nanoparticles are dispersed in isopropanol at a concentration of 5-10 mg / mL according to the corresponding mass ratio. The mixture is then dynamically spin-coated onto the perovskite layer surface at a rotation speed of 2000-3000 rpm for 20 s. After spin-coating, the mixture is annealed at 100-120 ℃ for 1-15 min. The thickness of this layer is 3-10 nm. The preferred mass ratio of each component in the PEA2PbI4 / FAPbI3 / CeO2 nanocomposite layer is (4~6):(2~4):(1~3), and the preferred mass ratio of each component in the BA2PbI4 / CsPbIBr2 / CeO2 nanocomposite layer is (4~6):(2~4):(1~3). 3) The mass ratio of each component in the PEA2PbI4 / CsPbI2Br / CeO2 nanocomposite layer is (4~6):(2~4):(1~3). The interface passivation layer is further preferably PEA2PbI4 / CsPbI2Br / CeO2, and the mass ratio of each component is 5:3:2.
[0027] d. An electron transport layer is prepared by vacuum evaporation of C. 60 The tin oxide layer is deposited in conjunction with atomic deposition, with a thickness of 10~20 nm.
[0028] e. Silver electrodes are prepared by vacuum thermal evaporation of silver electrodes with a thickness of 80~200 nm.
[0029] (4) Packaging panel The battery device is encapsulated using an encapsulation panel made of ultra-thin radiation-resistant borosilicate glass with a thickness of 100~300μm. The ultra-thin borosilicate glass is ultrasonically cleaned in two steps with deionized water and ethanol and then dried before being used to encapsulate the battery.
[0030] The present invention will be further illustrated below by way of embodiments. Example 1
[0031] This embodiment features a rigid encapsulation structure, designed for use in geosynchronous orbit. Its structure is as follows: S01 Obtain the substrate The substrate is an Al2O3 ceramic substrate with a thickness of 400 μm and a thermal conductivity of 25 W / (m·K). It is ultrasonically cleaned with pure water and alcohol for 10 min each, and then dried at 120 ℃ for 30 min.
[0032] S02 is used to fabricate the perovskite solar cell body on the substrate. Nickel oxide was deposited as a hole transport layer. The magnetron sputtering power was 120 W, the gas pressure was 0.3 Pa, the Ar / O ratio was 5 / 1, and the thickness of the hole transport layer was 25 nm.
[0033] b. The perovskite layer was deposited by a one-step wet spin-coating method using a perovskite precursor solution; (1) the perovskite bulk material FA 0.8 MA 0.15 Cs 0.05 Pb(I 0.85 Br 0.15 (3) Dissolved in an organic solvent to obtain a 1.4 M solution, the organic solvent being a mixed solvent of DMF and DMSO, with a volume ratio of DMF:DMSO=4:1; (2) CeO2 nanoparticles with an average particle size of 3 nm were dispersed in the solution to obtain a perovskite precursor solution, the mass of the CeO2 nanoparticles being 0.8 wt% of the perovskite bulk material; (3) The perovskite precursor solution was spin-coated to form a film, the spin-coating speed being 5000 rpm, the acceleration being 1000 rpm / s, and the time being 50 s, with the anti-solvent CB added eight seconds before the end of the spin-coating; (4) Annealed at 120 ℃ for 20 min, the final perovskite layer thickness being 500 nm.
[0034] c. Deposit an interface passivation layer. In this embodiment, the interface passivation layer is a PEA2PbI4 / CsPbI2Br / CeO2 composite layer. The mass ratio of PEA2PbI4, CsPbI2Br, and CeO2 in the interface passivation layer is 5:3:2, and the total thickness is 6 nm. (1) PEA2PbI4, CsPbI2Br, and CeO2 are ultrasonically mixed in IPA solvent at a set mass ratio to form a 5 mg / mL precursor solution; (2) The precursor solution is spin-coated into a wet film at a speed of 3000 rpm; (3) The film is annealed at 100 °C for 1 min.
[0035] d. Deposit electron transport layer, (1) using evaporation equipment, evaporate 10 nm of C 60 (2) SnOx was deposited using ALD atomic layer deposition process to form an electron transport layer. Tetra(dimethylamino)tin was used as the tin source during ALD deposition. The working temperature was 150 °C, the water-to-source ratio was 1 / 1, the number of cycles was 40, and the thickness of the electron transport layer was 15 nm.
[0036] The e electrode is formed by vapor deposition of Ag to form a silver electrode with a thickness of 100 nm.
[0037] The S03 package uses 300 μm ultrathin radiation-resistant borosilicate glass as the package panel to encapsulate the device obtained in S02.
[0038] Comparative Example 1 The difference from Example 1 is that CeO2 was not added to the perovskite layer and no interface passivation layer was set.
[0039] The irradiation stability of Example 1 and Comparative Example 1 was tested under the same test conditions, such as... Figure 2 It can be seen that Example 1 was subjected to 1×10 16 (e / cm) 2 The efficiency decay after irradiation was less than 10%; the thermal stability of Example 1 and Comparative Example 1 was tested, such as... Figure 3 After 200 cycles of thermal cycling stability testing from -40 °C to 120 °C, the PCE of Example 1 remained almost identical to that of the comparative example. The long-term atomic oxygen exposure mass loss of Example 1 and Comparative Example 1 was tested, as shown in... Figure 4 The mass loss of Example 1 was only 0.3% after 1000 h; in the short-wavelength band, Example 1 blocked the higher energy short-wavelength light, which hindered the defects caused by high-energy light irradiation and helped to improve the long-term stability of perovskite solar cells. Example 2
[0040] The preparation method in this embodiment is as follows: S01 Obtain the substrate The substrate is made of transparent polyimide with a thickness of 80 μm. It is ultrasonically cleaned with pure water and ethanol for 10 min each, then dried at 80 °C for 10 min, and then plasma cleaned for 5 min.
[0041] S02 is used to prepare the battery body. a. Preparation of the hole transport layer: The hole transport layer was prepared by magnetron sputtering of nickel oxide. The magnetron sputtering parameters were: power 120 W, gas pressure 0.3 Pa, Ar / O = 5 / 1. The hole transport layer thickness was 20 nm.
[0042] b. Preparation of perovskite layer: (1) Prepare perovskite precursor solution, and then prepare perovskite bulk material FA. 0.85 MA 0.1 Cs 0.05 Pb(I 0.85 Br 0.15 )3 Dissolve in organic solvent to form primary solution, add CeO2 nanoparticles to primary solution and ultrasonically disperse in organic solvent to form perovskite precursor solution; the average particle size of CeO2 nanoparticles is 5 nm, the mass of CeO2 nanoparticles is 0.6 wt% of perovskite bulk material, the organic solvent is DMF and DMSO mixed in volume ratio DMF:DMSO=3:1, the concentration of perovskite bulk material in perovskite precursor solution is 1.55 M. (2) One-step wet static spin coating of perovskite precursor solution, spin coating parameters are: 5000 rpm, 50 s, antisolvent EA in the fifth to last second, (3) anneal at 100 ℃ for 30 min to form a perovskite layer with a thickness of 600 nm.
[0043] c. Preparation of the interface passivation layer: (1) PEA2PbI4, FAPbI3, and CeO2 were mixed in IPA at a mass ratio of 5:3:2 to form a precursor solution with a concentration of 5 mg / mL. (2) The precursor solution was spin-coated onto the perovskite layer at a speed of 3000 rpm to obtain an interface passivation layer with a thickness of 5 nm. The material was ultrasonically dissolved in IPA at a concentration of 5 mg / mL, spin-coated at 3000 rpm for 30 s, and then annealed at 100 ℃ for 5 min.
[0044] To prepare the electron transport layer, first deposit an 8 nm layer of C using an evaporation deposition apparatus. 60 Then, an electron transport layer was obtained by atomic layer deposition of tin oxide, using tetra(dimethylamino)tin as the tin source, operating at a temperature of 150 °C, with a cycle number of 38 and a thickness of 12 nm.
[0045] The electrode was prepared by evaporation of Ag to obtain a silver electrode at a evaporation rate of 0.1 Å / s and an electrode layer thickness of 100 nm.
[0046] S03 package: The battery device obtained by S02 is packaged using 300 μm thick borosilicate glass.
[0047] The thermal cycling stability of the battery in this embodiment was tested under conditions of -40 ℃ to 120 ℃. After 200 cycles, the PCE of the battery remained almost unchanged. Example 3
[0048] The fabrication method of the perovskite solar cell in this embodiment is as follows: The S01 substrate is a heterojunction silicon cell substrate with a thickness of 150 μm.
[0049] S02 is used to prepare the perovskite solar cell body. a. A hole transport layer is deposited on the substrate by magnetron sputtering: the hole transport material is NiO. X The power was 120 W, the gas pressure was 0.3 Pa, the Ar / O ratio was 5 / 1, and the deposition thickness was 25 nm.
[0050] b. Fully wet coating method for perovskite layer: (1) Apply perovskite bulk material FA 0.8 MA 0.2 Pb(I 0.75 Br 0.25 )3 was mixed with CeO2 nanoparticles and dissolved in DMF:DMSO=4:1, and ultrasonically dispersed for 20 min under controlled temperature below 20 ℃ to obtain FA. 0.8 MA 0.2 Pb(I 0.75 Br 0.25 (2) The perovskite precursor solution was coated on the hole transport layer using a one-step blade coating method. The blade head height was 200 μm, the speed was 10 mm / s, and a nitrogen air knife was used with a forward 40° direction and a pressure of 0.1 MPa. After coating, a VCD was used to evacuate and maintain the pressure for 2E. -2 Pa pressure held for 5 min. (3) Anneal at 120 ℃ for 20 min to form a film.
[0051] c. Preparation of the interface passivation layer: a BA2PbI4 / CsPbIBr2 / CeO2 composite layer with a thickness of 8 nm; (1) Dissolve BA2PbI4 / CsPbIBr2 / CeO2 in IPA at a mass ratio of 6:3:1 with a concentration of 6 mg / mL; (2) Spin-coat the film at a speed of 2000 rpm for 30 s; (3) Anneal at 100 ℃ for 1 min.
[0052] d. Preparation of electron transport layer: 8 nm C was deposited using an evaporation deposition apparatus. 60The evaporation rate was 0.1 Å / s; then SnOx was prepared by atomic layer deposition, using tetra(dimethylamino)tin as the tin source, operating at 150 ℃, with 50 cycles and an electron transport layer thickness of 20 nm.
[0053] The e-electrode is an Ag electrode deposited by vapor deposition at a rate of 0.1 Å / s, with a total thickness of 200 nm.
[0054] S03 package: The top and bottom are encapsulated with borosilicate glass, and the thickness of the borosilicate glass is 200 μm.
[0055] Tests showed that the PCE of the battery obtained in this embodiment remained at 90% after high-energy particle irradiation; the atomic oxygen loss was no more than 2% after 1000 h.
[0056] The above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims
1. A perovskite solar cell for space use, characterized in that: It includes a hole transport layer, a perovskite layer, and an electron transport layer. The perovskite layer generates holes and free electrons under photoexcitation. Holes enter the hole transport layer, and free electrons enter the electron transport layer. The perovskite layer includes the perovskite bulk material ABX3 and cerium oxide, wherein A is a monovalent organic cation and / or an inorganic cation, B is a divalent metal cation, and X is a monovalent halide anion.
2. The perovskite solar cell for space use according to claim 1, characterized in that: The cerium oxide in the perovskite layer consists of nano-sized particles, and the cerium oxide content is 0.5~1.0 wt% of the perovskite bulk material.
3. The space perovskite solar cell according to claim 1 or 2, characterized in that: An interface passivation layer is disposed between the perovskite layer and the electron transport layer, and the interface passivation layer is doped with cerium.
4. The space perovskite solar cell according to claim 3, characterized in that: The cerium element in the interface passivation layer exists in the form of cerium oxide. The interface passivation layer is a composite layer formed by M1 / M2 / M3. M1 is PEA2PbI4 or BA2PbI4, M2 is CsPbI2Br, CsPbIBr2 or FAPbI3, and M3 is CeO2.
5. The space perovskite solar cell according to claim 4, characterized in that: The interface passivation layer is a composite layer formed by mixing M1, M2 and M3, and the mass ratio of M1, M2 and M3 is (4~6):(2~4):(1~3).
6. The space perovskite solar cell according to claim 4 or 5, characterized in that: The interface passivation layer is a PEA2PbI4 / CsPbI2Br / CeO2 composite layer, a PEA2PbI4 / FAPbI3 / CeO2 composite layer, or a BA2PbI4 / CsPbIBr2 / CeO2 composite layer.
7. The perovskite solar cell for space use according to claim 1, characterized in that: In the perovskite bulk material ABX3, A stands for FA. + MA + Cs + A combination of one or more of them, and A contains at least Cs. + B is Pb 2+ ;X is I - and Br - The combination of .
8. The space perovskite solar cell according to claim 1 or 7, characterized in that: In the perovskite bulk material ABX3, A stands for FA. + MA + Cs + The combination, B is Pb 2+ X is I - and Br - The combination of [missing information], with the electron transport layer material being C[missing information]. 60 In conjunction with tin oxide, the hole transport layer material is nickel oxide, and an interface passivation layer is set between the perovskite and the electron transport layer. The interface passivation layer is a composite material of PEA2PbI4, CsPbI2Br, and CeO2.
9. A method for preparing a space perovskite solar cell according to claim 1, characterized in that: This includes the preparation of a perovskite layer, and the specific method for preparing the perovskite layer includes: a. A perovskite precursor solution is prepared by mixing the perovskite bulk material ABX3 and cerium oxide in a solvent, wherein the concentration of the perovskite bulk material ABX3 in the perovskite precursor solution is 1.0~1.8 M; b. Coating the perovskite precursor solution into a film; c. Annealing to form a film, thus obtaining the perovskite layer.
10. The method for preparing a space perovskite solar cell according to claim 9, characterized in that: The cerium oxide content is 0.5~1.0 wt% of the perovskite bulk material.