Process cavity inflation control method for a process cavity and semiconductor process apparatus

Abstract

The application discloses a process cavity inflation control method of a process cavity and a semiconductor process equipment, and relates to the technical field of semiconductor equipment. The process cavity inflation control method of the process cavity comprises the following steps: obtaining a current air pressure P in the process cavity, controlling a switch valve to be opened, inflating the process cavity through an inflation pipeline, and making the air pressure in the process cavity rise from the current air pressure P to a target air pressure Q; the gas flow of the inflation pipeline is M, and the required theoretical inflation time is T=(Q-P) / M; when it is detected that the air pressure in the process cavity rises from the current air pressure P to the target air pressure Q, a closing instruction is sent to the switch valve, a first time point when the air pressure in the process cavity rises from the current air pressure P to the target air pressure Q is obtained, a second time point when the switch valve receives the closing instruction and is completely closed is obtained, and a closing delay time T1 is calculated; and the closing delay time of the switch valve is controlled to satisfy T1≤a preset time T set , and the actual inflation time is T+T1.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a method for controlling the gas filling of a process cavity and semiconductor process equipment. Background Technology

[0002] Electroplating equipment is crucial in the fields of advanced metal interconnects and advanced packaging in semiconductors. Its primary function is to deposit metal layers onto characteristic shapes on the wafer surface, such as TSV vias, bumps, and RDLs (rewiring lines). Before entering critical processes like electroplating, wafers typically undergo pre-treatment steps such as pre-cleaning and pre-wetting to remove surface contaminants and enhance surface hydrophilicity. This is essential for ensuring the uniformity, adhesion, and final yield of subsequent thin film deposition or electroplating, making it an indispensable key step before electroplating.

[0003] To achieve drying in a vacuum environment or pretreatment in a specific atmosphere, existing semiconductor process equipment often employs sealable process chambers. During pretreatment, the process chamber is first sealed, and its interior is evacuated to a negative pressure state using a vacuum system. After pretreatment, gas is rapidly injected into the process chamber through an inflation line to restore its internal pressure to atmospheric pressure, allowing for safe opening of the chamber to handle wafers. In actual operation, the process of restoring atmospheric pressure is typically completed within seconds. However, rapid inflation can easily lead to overcharging, where gas continues to be introduced even after the internal pressure has reached atmospheric pressure. Overcharging creates positive pressure inside the process chamber, which acts on the inner wall of the chamber, generating an outward thrust. This often causes problems such as chamber shaking and abnormal noises, and in severe cases, may even lead to damage or explosion of the process chamber, posing serious safety hazards. Summary of the Invention

[0004] The purpose of this invention is to provide a process cavity inflation control method and semiconductor process equipment to achieve precise control of the actual inflation time in the process cavity, thereby reducing the shaking, abnormal noise and safety risks of the process cavity caused by over-inflation.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] A method for controlling the inflation of a process cavity, wherein the process cavity is formed inside the process cavity, and the process cavity is inflated through an inflation pipeline, wherein the inflation pipeline is equipped with a switch valve, and the method for controlling the inflation of the process cavity includes the following steps:

[0007] The current gas pressure P in the process chamber is obtained, the switch valve is controlled to open, and gas is injected into the process chamber through the gas filling pipeline to raise the gas pressure in the process chamber from the current gas pressure P to the target gas pressure Q. The gas flow rate of the gas filling pipeline is M. The theoretical inflation time required to raise the gas pressure in the process chamber from the current gas pressure P to the target gas pressure Q is T = (QP) / M.

[0008] When the gas pressure in the process chamber is detected to rise from the current gas pressure P to the target gas pressure Q, a closing command is sent to the switching valve, and the first time point from the detection of the gas pressure in the process chamber rising from the current gas pressure P to the target gas pressure Q and the second time point when the switching valve receives the closing command and closes completely are obtained, as well as the closing delay time T1 calculated from the difference between the second time point and the first time point;

[0009] Control the closing delay time T1 of the switching valve to satisfy T1 ≤ preset time T set The preset time T set Defined as follows: the pressure rise in the process chamber caused by the additional gas introduced during the shutdown delay time T1 is limited to the maximum allowable overcharge pressure ΔP. max The maximum delay time within T is T+T1; therefore, the actual inflation time is T+T1.

[0010] As an optional embodiment of the process chamber inflation control method, the step of obtaining the first time point from the detection that the gas pressure in the process chamber rises from the current gas pressure P to the target gas pressure Q and the second time point when the switching valve receives the closing command and completely closes includes:

[0011] When the gas pressure in the process chamber is detected to rise from the current gas pressure P to the target gas pressure Q, the time at this moment is determined as the first time point;

[0012] Based on the first time point, a secondary confirmation detection is performed on the air pressure in the process chamber to determine whether the air pressure in the process chamber has reached the target air pressure Q.

[0013] When the gas pressure in the process chamber reaches the target gas pressure Q based on the secondary confirmation detection, a closing command is generated to control the switching valve to close.

[0014] The switching valve is controlled to close based on the closing command, and the time when the switching valve is completely closed is taken as the second time point.

[0015] As an optional solution for the process cavity inflation control method of the aforementioned process cavity, the preset time T set Based on the volume of the process chamber, the diameter D of the inflation pipeline, and the maximum allowable overcharge pressure ΔPmax Sure.

[0016] As an optional solution for the process cavity inflation control method of the aforementioned process cavity, the preset time T set The value is negatively correlated with the diameter D of the inflation pipe, and the preset time T... set The volume of the process chamber and the maximum allowable overcharge pressure ΔP max They show a positive correlation.

[0017] As an optional solution for the process cavity inflation control method of the aforementioned process cavity, the preset time T set Satisfying the following functional relationship: T set ≤V×(ΔP max ) / (k×D 2 ), where V is the volume of the process cavity, ΔP max To allow the maximum overcharge pressure, k is a constant related to gas flow rate, gas properties, process chamber volume, and temperature.

[0018] As an optional method for controlling the gas filling of the process cavity, the method for controlling the closing delay time T1 of the switching valve includes:

[0019] By setting different delay times and conducting multiple inflation tests on the process chamber based on these delay times, the maximum allowable delay time T inside the process chamber is determined based on the volume of the process chamber and the flow rate M of the inflation pipeline. set ;

[0020] Controlling the current shutdown delay time T1 to be less than or equal to the preset time T set .

[0021] As an optional solution for the process cavity inflation control method of the aforementioned process cavity, the preset time T set ≤0.6 seconds, 0.7 seconds, or 0.8 seconds.

[0022] As an optional scheme of the process cavity inflation control method, the current gas pressure P in the process cavity is the process gas pressure required by the process cavity, the process gas pressure required by the process cavity is lower than atmospheric pressure, and the target gas pressure Q is atmospheric pressure.

[0023] As an alternative method for controlling the gas filling of the process cavity, the gas flow rate M is kept constant by a flow control valve installed on the filling pipeline.

[0024] A semiconductor process apparatus includes a process cavity and a gas filling pipeline connected to the process cavity. The gas filling pipeline is equipped with a switch valve, and gas is filled into the process cavity inside the process cavity using a process cavity gas filling control method as described in any of the above embodiments.

[0025] As an alternative to the semiconductor process equipment, the process cavity includes a top cover with a through hole, and the gas filling pipe is disposed in the through hole and communicates with the process cavity inside the process cavity.

[0026] The beneficial effects of this invention are:

[0027] The process cavity inflation control method and semiconductor process equipment provided by this invention, based on the theoretical inflation time T=(QP) / M during the inflation process, where P is the current gas pressure in the process cavity, Q is the target gas pressure, and M is the gas flow rate in the inflation pipeline, shifts the actual end point of the inflation process forward to the instant the pressure in the process cavity reaches the target gas pressure Q, issuing a shut-off command. A shut-off delay time T1 is introduced, calculated as the difference between the first time point when the current gas pressure P rises to the target gas pressure Q and the second time point when the switching valve receives the shut-off command and fully closes, ensuring that T1 ≤ preset time T. set This strictly limits the amount of gas added during the shutdown delay time T1 and the resulting overcharge pressure to the maximum allowable overcharge pressure ΔP. max Within this range, the overfilling of gas and sudden pressure rise caused by the delayed closing of the valve at the end of the inflation process are avoided. This eliminates the shaking, abnormal noise, and even explosion sounds in the process chamber caused by pressure shock. Without adding a complex mechanical buffer structure, the safety and stability of the inflation process are improved simply by optimizing the control of the closing delay time. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of the semiconductor process equipment provided in an embodiment of the present invention;

[0029] Figure 2 This is a flowchart of the process cavity inflation control method provided in the embodiment of the present invention;

[0030] Figure 3 This is a flowchart of a method for obtaining a first time point and a second time point provided in an embodiment of the present invention.

[0031] In the picture:

[0032] 1. Process chamber; 2. Inflation pipeline; 3. Switch valve; 4. Pressure sensor; 5. Top cover. Detailed Implementation

[0033] Embodiments of the present invention are described in detail below. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0034] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The terms "first position" and "second position" refer to two different positions.

[0035] Unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to fixed connections or detachable connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and connections within two components or interactions between two components. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances.

[0036] Unless otherwise expressly specified and limited, "above" or "below" a second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of a second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" of a second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0037] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0038] like Figure 1As shown, this embodiment provides a semiconductor process apparatus, including a process chamber 1, a gas filling pipeline 2, and a vacuum system. Both the gas filling pipeline 2 and the vacuum system are connected to the process chamber 1. A switching valve 3 is installed on the gas filling pipeline 2, which is used to fill the process chamber 1 with gas. The vacuum system is used to evacuate the process chamber 1, creating a negative pressure state inside the process chamber for pre-processing semiconductor components such as wafers. After the pre-processing is completed, gas is quickly injected into the process chamber through the gas filling pipeline 2 to restore the internal pressure of the process chamber 1 to atmospheric pressure, so that the process chamber 1 can be safely opened to pick up and put in wafers.

[0039] The process cavity 1 includes a top cover 5 with a through hole. An inflation pipe 2 is located within the through hole and communicates with the interior of the process cavity 1. The inflation pipe 2 connects to the through hole of the top cover 5 to communicate with the process cavity, allowing inflation from the top of the process cavity 1 into the cavity. Compared to side or bottom inflation, top inflation allows airflow to enter the process cavity from top to bottom. The airflow naturally diffuses within the cavity space and in the direction of gravity, effectively mitigating the direct impact of the inflation airflow on components such as wafers within the process cavity and reducing the impact of airflow disturbance on component positioning accuracy and surface condition. Simultaneously, the top cover 5 typically serves as the opening and closing structure of the process cavity 1. Integrating the inflation pipe 2 into the top cover 5 simplifies the pipe layout on the sidewalls of the process cavity 1, reduces the number of openings in the process cavity 1, and helps maintain the structural strength and sealing performance of the process cavity 1.

[0040] In addition, during the process of restoring atmospheric pressure by filling the process chamber with air after the process is completed, this top inflation method, in conjunction with the timing control of the switching valve 3 on the inflation pipeline 2, can achieve rapid inflation while ensuring that the air pressure in the process chamber rises evenly, avoiding sudden changes in local pressure caused by concentrated airflow impact, thereby suppressing problems such as shaking and abnormal noise of the top cover 5, and improving the safety and stability of equipment operation.

[0041] To monitor the air pressure inside the process chamber 1 in real time, the semiconductor process equipment also includes a pressure sensor 4 and a control unit. A connection port is provided on the upper cover 5, through which the pressure sensor 4 is connected, allowing its detection head to extend into the process chamber to detect the air pressure. The instrument portion of the pressure sensor 4 is located outside the process chamber 1 and is used to display the air pressure value. The control unit is communicatively connected to the pressure sensor 4 and electrically connected to the switching valve 3. The pressure value detected in real time by the pressure sensor 4 is fed back to the control unit, which then controls the opening and closing of the switching valve 3 based on the pressure value.

[0042] In the actual operation of semiconductor process equipment, the control unit receives the pressure value fed back by the pressure sensor 4, processes the signal, and outputs control commands to the switching valve 3 for execution. This complete link has an inherent response delay. Specifically, the control unit only issues a shut-off command when the pressure sensor 4 detects that the gas pressure in the process chamber has reached the target value. However, the switching valve 3 requires a mechanical action time from receiving the command to fully closing. During the delay period from detecting that the gas pressure in the process chamber has reached the target value to the closing of the switching valve 3, the gas filling pipeline 2 continuously fills the process chamber with gas, causing the actual gas pressure in the process chamber to exceed the target value, resulting in overcharging. When the overcharging is large, the pressure inside the process chamber rises sharply, which can easily cause the top cover 5 to shake, make abnormal noises, or even explode, seriously affecting the safety and stability of the equipment operation.

[0043] To solve the above problems, such as Figure 2 As shown, this embodiment proposes a process cavity gas filling control method, applied to the aforementioned semiconductor process equipment. The process cavity gas filling control method includes the following steps:

[0044] S10. Obtain the current gas pressure P in the process chamber, control the switch valve 3 to open, and inflate the process chamber through the inflation pipeline 2 to raise the gas pressure in the process chamber from the current gas pressure P to the target gas pressure Q. The gas flow rate of the inflation pipeline 2 is M. The theoretical inflation time required to raise the gas pressure in the process chamber from the current gas pressure P to the target gas pressure Q is T = (QP) / M.

[0045] After the pretreatment process in process chamber 1 is completed, the current air pressure P in the process chamber is obtained through pressure sensor 4. At this time, the current air pressure P in the process chamber is the required process air pressure for process chamber 1. The required process air pressure for process chamber 1 is lower than atmospheric pressure, that is, the current air pressure P is lower than atmospheric pressure, and the target air pressure Q is atmospheric pressure. Pressure sensor 4 sends the detected air pressure value to the control unit, and the air pressure value received by the control unit is the current air pressure P. Since the inside of process chamber 1 is a sealed environment, the air pressure in the process chamber remains basically unchanged before the air filling pipeline 2 fills the process chamber with air.

[0046] The control unit controls the opening of the switch valve 3, and the gas in the inflation pipeline 2 flows into the process chamber, causing the gas pressure in the process chamber to rise continuously. During the inflation process, the pressure sensor 4 detects the gas pressure in the process chamber in real time and sends it to the control unit. When the gas pressure in the process chamber rises to the target gas pressure Q, the control unit receives the gas pressure value of the target gas pressure Q and controls the switch valve 3 to close.

[0047] In one embodiment, the gas flow rate M of the inflation line 2 is kept constant by a flow control valve installed on the inflation line 2. With the temperature and volume of the process chamber remaining constant, the greater the gas flow rate entering the process chamber, the faster the gas pressure rises within the process chamber. Therefore, the theoretical inflation time required for the gas pressure in the process chamber to rise from the current pressure P to the target pressure Q is T = (QP) / M.

[0048] S20. When the gas pressure in the process chamber is detected to rise from the current gas pressure P to the target gas pressure Q, a closing command is sent to the switching valve 3, and the first time point from the detection of the gas pressure in the process chamber rising from the current gas pressure P to the target gas pressure Q and the second time point from the receiving of the closing command and the complete closing of the switching valve 3 are obtained, as well as the closing delay time T1 calculated from the difference between the second time point and the first time point.

[0049] like Figure 3 As shown, in one embodiment, the steps of obtaining the first time point from the detection of the gas pressure in the process chamber rising from the current gas pressure P to the target gas pressure Q and the second time point of the switching valve 3 receiving the closing command and completely closing include:

[0050] S21. When the gas pressure in the process chamber is detected to rise from the current gas pressure P to the target gas pressure Q, the time at this moment is determined as the first time point.

[0051] During the inflation process, the control unit receives the air pressure value in the process chamber detected by the pressure sensor 4 in real time. When it is determined that the air pressure in the process chamber rises to the target air pressure Q, the control unit records this moment as the first time point t1.

[0052] S22. Based on the first time point, perform a secondary confirmation test on the air pressure in the process chamber to determine whether the air pressure in the process chamber has reached the target air pressure Q.

[0053] The control unit records the moment when the pressure sensor 4 first detects the target air pressure Q as the first time point t1. Before issuing a closing command to the switching valve 3, the control unit needs to perform a secondary confirmation to verify whether the air pressure in the process chamber has truly reached the target air pressure Q. This involves confirming the air pressure value detected by the pressure sensor 4 after the first time point t1. If the air pressure value received after the first time point t1 is still the target air pressure Q or slightly greater than the target air pressure Q, it indicates that the air pressure in the process chamber has reached the target air pressure Q. This secondary confirmation is to prevent misjudgments caused by erroneous signals or other interference. The secondary detection has a very short time interval, approximately 0.1 seconds, which is considered the closing delay time.

[0054] S23. When the gas pressure in the process chamber reaches the target gas pressure Q based on the secondary confirmation detection, a closing command is generated to control the closing of the switching valve 3.

[0055] If the air pressure value received after the first time point t1 is still the target air pressure Q or slightly greater than the target air pressure Q, it means that the air pressure in the process chamber has reached the target air pressure Q. At this time, the control unit generates a closing command for the switch valve 3.

[0056] S24. Control the switch valve 3 to close based on the closing command, and take the time when the switch valve 3 is completely closed as the second time point.

[0057] After receiving the closing command, the switching valve 3 will reach a fully closed state after a mechanical action delay. The control unit records the moment when the switching valve 3 reaches the fully closed state as the second time point t2. Therefore, the closing delay time is the time from when the pressure sensor 4 first detects the target air pressure Q, to when the switching valve 3 is fully closed after a second confirmation.

[0058] To achieve accurate acquisition of the aforementioned time points, the control unit has a built-in timer. The timer latches the current time the moment the control unit determines that the air pressure has reached the target air pressure Q, and this is designated as the first time point t1. For determining the second time point t2, the control unit determines that the switching valve 3 is fully closed by receiving the valve position signal from the switching valve 3, detecting the shut-off characteristic point of the driving current / voltage flowing through the switching valve 3, or monitoring the moment when the gas flow rate in the inflation line 2 returns to zero. This moment is recorded by the timer as the second time point t2. The control unit calculates the difference between the second time point t2 and the first time point t1 to obtain the closing delay time T1 = t2 - t1.

[0059] The shutdown delay time T1 reflects the overall system response lag between when the air pressure reaches the target and when the inflation is physically cut off, including the total time occupied by signal transmission, processing, and the action of the switch valve 3 actuator.

[0060] S30. Control the closing delay time T1 of the control switch valve 3 to ensure that T1 ≤ preset time T set Among them, the preset time T set Defined as: the pressure rise in the process chamber caused by the extra gas added during the shutdown delay time T1 is limited to the maximum allowable overcharge pressure ΔP. max The maximum delay time within T is T+T1; therefore, the actual inflation time is T+T1.

[0061] In one embodiment, the method for controlling the closing delay time T1 of the switching valve 3 includes:

[0062] S31. Set different closing delay times T1, and perform multiple inflation tests on the process chamber based on the different closing delay times T1. Determine the maximum allowable delay time T inside the process chamber 1 based on the volume of the process chamber and the flow rate M of the inflation pipe 2. set .

[0063] Specifically, with the volume of the process chamber and the gas flow rate M of the inflation pipeline 2 already determined, the current gas pressure P and the target gas pressure Q are kept constant, and multiple inflation tests are conducted with different closing delay times T1. In each test, after the pressure sensor 4 detects that the gas pressure in the process chamber has reached the target gas pressure Q, the switch valve 3 is closed after a set closing delay time T1, and the actual peak pressure in the process chamber is monitored and recorded simultaneously. The difference between the peak pressure of each test and the target gas pressure Q is compared to obtain the overcharge pressure ΔP. The overcharge pressure ΔP is kept within the allowable maximum overcharge pressure ΔP. max In each test in which no explosion sound or abnormal vibration was generated in the process chamber, the corresponding maximum delay time was determined as the maximum allowable delay time under that operating condition, and it was preset to T. set .

[0064] Among them, the maximum allowable overcharge pressure ΔP max Based on the structural strength, sealing performance, and safe operation requirements of process chamber 1, a known safety threshold is predetermined.

[0065] S32, Control the current shutdown delay time T1 to be less than or equal to the preset time T set .

[0066] Based on the calibrated T set Select the appropriate type or configure the control parameters of the switching valve 3 so that the closing delay time T1 of the switching valve 3 in actual operation is less than or equal to the preset time T. set .

[0067] Specifically, if the inherent closing delay time T1 of the currently selected switching valve 3 has been measured to a known value, then compare T1 with T... set When T1≤T set When T1 > T1, the switch valve 3 can be put into use directly, and its actual inflation time is T + T1, with the overcharge pressure within the safe range. set If necessary, replace the switching valve 3 with a faster closing response valve to reduce its closing delay time T1 to T. set In other embodiments, when the switching valve 3 cannot be replaced, the pressurization rate within the process chamber is reduced by decreasing the gas flow rate M in the inflation line 2, thereby reducing the overcharge within the same T1 and effectively ensuring that T1 meets safety requirements. This method ensures the safety and controllability of the actual inflation process.

[0068] In another alternative implementation, a preset time T set Based on the volume of the process chamber, the diameter D of the inflation line 2, and the maximum allowable overcharge pressure ΔP max Confirmed. The preset time T is specified. setThe pressure is negatively correlated with the diameter D of the inflation line 2; that is, the larger the diameter D of the inflation line 2, the greater the gas flow rate into the process chamber per unit time, resulting in a greater pressure overshoot within the same delay time. Therefore, the maximum allowable delay time is smaller. Preset time T set With respect to the volume of the process chamber and the maximum allowable overcharge pressure ΔP max There is a positive correlation, that is, the larger the volume of the process cavity or the maximum allowable overcharge pressure ΔP, the greater the correlation. max The larger the value, the stronger the system's tolerance to overcharging, and the longer the maximum allowable delay time.

[0069] Furthermore, the preset time T set Satisfying the following functional relationship: T set ≤V×(ΔP max ) / (k×D 2 ), where V is the volume of process cavity 1, ΔP max To determine the maximum allowable overcharge pressure, k is a constant related to gas flow rate, gas properties, process chamber volume, and temperature. k can be obtained through a single calibration test under defined process conditions: under inflation conditions identical to actual operating conditions, an inflation test is conducted using a known diameter D of the inflation pipeline 2, and the measured delay time T is recorded. 10 And its corresponding overcharge pressure ΔP0, substituting into the formula k=V×ΔP0 / (T) 10 The value of k can be obtained by inverse calculation using (×D0²). After obtaining the value of k, the preset time T under any diameter D of the inflation pipe 2 can be obtained by applying the above inequality. set Theoretical predictions are made to provide a quantitative basis for the selection of the on / off valve 3 and the setting of control parameters.

[0070] In one embodiment, the preset time T set ≤0.6 seconds, 0.7 seconds, or 0.8 seconds. Considering the safety margin in practical applications and the specifications of the on / off valve product series, the preset time T is set to... set The timeout is set to ≤0.6 seconds, 0.7 seconds, or 0.8 seconds to accommodate safety control requirements under different inflation pipe diameters D and process chamber volumes. These values ​​can be achieved by selecting a switching valve 3 with the appropriate response speed, such as a solenoid valve or pneumatic valve with a closing delay time T1 ≤ 0.6 seconds.

[0071] The process chamber inflation control method provided in this embodiment uses the theoretical inflation time T=(QP) / M as a basis during the inflation process, where P is the current gas pressure in the process chamber, Q is the target gas pressure, and M is the gas flow rate in the inflation pipeline 2. The actual end point of the inflation process is moved forward to the instant the pressure in the process chamber reaches the target gas pressure Q, at which point a closing command is issued. A closing delay time T1 is introduced, calculated as the difference between the second time point when the switching valve 3 receives the closing command and fully closes, and the first time point when the current gas pressure P rises to the target gas pressure Q. This ensures that the closing delay time T1 ≤ preset time T. set This strictly limits the amount of gas added during the shutdown delay time T1 and the resulting overcharge pressure to the maximum allowable overcharge pressure ΔP. max Within this range, the overfilling of gas and sudden pressure rise caused by the delayed closing of the valve 3 at the end of inflation are avoided. This eliminates the shaking, abnormal noise, and even explosion sound of the top cover 5 caused by pressure impact in the process chamber. Without adding a complex mechanical buffer structure, the safety and stability of the inflation process are improved simply by optimizing the control of the closing delay time.

[0072] The above description is only a preferred embodiment of the present invention. For those skilled in the art, there will be changes in the specific implementation and application scope based on the ideas of the present invention. The content of this specification should not be construed as a limitation of the present invention.

Claims

1. A method for controlling the inflation of a process cavity, wherein a process cavity is formed inside a process cavity (1), and the process cavity is inflated through an inflation pipeline (2), wherein a switch valve (3) is provided on the inflation pipeline (2), characterized in that, The process chamber inflation control method includes the following steps: The current gas pressure P in the process chamber is obtained, the switch valve (3) is opened, and gas is injected into the process chamber through the inflation pipeline (2) so that the gas pressure in the process chamber rises from the current gas pressure P to the target gas pressure Q. The gas flow rate of the inflation pipeline (2) is M. The theoretical inflation time required to increase the gas pressure in the process chamber from the current gas pressure P to the target gas pressure Q is T = (QP) / M. When the gas pressure in the process chamber is detected to rise from the current gas pressure P to the target gas pressure Q, a closing command is sent to the switching valve (3), and the first time point from the detection of the gas pressure in the process chamber rising from the current gas pressure P to the target gas pressure Q and the second time point when the switching valve (3) receives the closing command and is completely closed are obtained, as well as the closing delay time T1 calculated from the difference between the second time point and the first time point; Control the closing delay time T1 of the switching valve (3) to ensure that T1 ≤ preset time T set The preset time T set Defined as follows: the pressure rise in the process chamber caused by the additional gas introduced during the shutdown delay time T1 is limited to the maximum allowable overcharge pressure ΔP. max The maximum delay time within T is T+T1; therefore, the actual inflation time is T+T1.

2. The process cavity inflation control method for the process cavity according to claim 1, characterized in that, The steps of obtaining the first time point from the detection of the gas pressure in the process chamber rising from the current gas pressure P to the target gas pressure Q and the second time point from the receiving of the closing command and complete closure of the switching valve (3) include: When the gas pressure in the process chamber is detected to rise from the current gas pressure P to the target gas pressure Q, the time at this moment is determined as the first time point; Based on the first time point, a secondary confirmation detection is performed on the air pressure in the process chamber to determine whether the air pressure in the process chamber has reached the target air pressure Q. When the gas pressure in the process chamber reaches the target gas pressure Q based on the secondary confirmation detection, a closing command is generated to control the closing of the switching valve (3); The switching valve (3) is controlled to close based on the closing command, and the time when the switching valve (3) is completely closed is taken as the second time point.

3. The process cavity inflation control method for the process cavity according to claim 1, characterized in that, The preset time T set Based on the volume of the process chamber, the diameter D of the inflation line (2), and the maximum allowable overcharge pressure ΔP max Sure.

4. The process cavity inflation control method for the process cavity according to claim 3, characterized in that, The preset time T set The diameter D of the inflation pipe (2) is negatively correlated with the preset time T. set The volume of the process chamber (1) and the maximum allowable overcharge pressure ΔP max They show a positive correlation.

5. The process cavity inflation control method for the process cavity according to claim 4, characterized in that, The preset time T set Satisfying the following functional relationship: T set ≤V×(ΔP max ) / (k×D 2 ), where V is the volume of the process cavity (1), ΔP max To allow the maximum overcharge pressure, k is a constant related to gas flow rate, gas properties, process chamber volume, and temperature.

6. The process cavity inflation control method for the process cavity according to claim 1, characterized in that, The method for controlling the closing delay time T1 of the switching valve (3) includes: Different shutdown delay times T1 are set, and multiple inflation tests are performed on the process cavity based on the different shutdown delay times T1. Based on the volume of the process cavity and the flow rate M of the inflation pipeline (2), the maximum allowable delay time T inside the process cavity (1) is determined by testing. set ; Control the current shutdown delay time T1 to be less than or equal to the preset time T. set .

7. The process cavity inflation control method for a process cavity according to any one of claims 1-6, characterized in that, The preset time T set ≤0.6 seconds, 0.7 seconds, or 0.8 seconds.

8. The process cavity inflation control method for a process cavity according to any one of claims 1-6, characterized in that, The current gas pressure P in the process chamber is the process gas pressure required by the process chamber (1). The process gas pressure required by the process chamber (1) is lower than atmospheric pressure. The target gas pressure Q is atmospheric pressure.

9. The process cavity inflation control method for a process cavity according to any one of claims 1-6, characterized in that, The gas flow rate M is kept constant by a flow control valve installed on the gas filling line (2).

10. A semiconductor process apparatus, comprising a process chamber (1) and a gas filling pipeline (2), wherein the gas filling pipeline (2) is connected to the process chamber (1), and a switching valve (3) is provided on the gas filling pipeline (2), characterized in that, The process cavity inside the process cavity (1) is inflated using the process cavity inflation control method as described in any one of claims 1-9.

11. The semiconductor process equipment according to claim 10, characterized in that, The process cavity (1) includes a top cover (5), the top cover (5) is provided with a through hole, and the air filling pipe (2) is provided in the through hole and communicates with the process cavity inside the process cavity (1).

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