Plasma injection configurations for processing chambers and related apparatus, chamber kits, and methods

Abstract

The present disclosure relates to plasma injection configurations for processing chambers and related apparatuses, chamber kits, and methods for semiconductor manufacturing. In one or more embodiments, a processing chamber suitable for use in semiconductor manufacturing includes one or more sidewalls, a window at least partially defining a processing volume, a substrate support disposed in the processing volume, and one or more heat sources operable to heat the processing volume. The processing chamber includes a flow enclosure at least partially disposed outside the one or more sidewalls and one or more radio frequency (RF) coils at least partially disposed around the flow enclosure.

Description

Technical Field

[0001] This disclosure relates to plasma injection configurations for processing chambers, and related equipment, chamber kits, and methods for semiconductor manufacturing. Background Technology

[0002] Semiconductor substrates are processed for a wide range of applications, including the manufacture of integrated devices and microdevices. One method of processing a substrate involves depositing a material (such as a semiconductor or conductive material) on the upper surface of the substrate. For example, epitaxy is a deposition process that deposits films of various materials on the surface of a substrate within a processing chamber. During processing, various parameters can affect the uniformity of the material deposited on the substrate.

[0003] However, operations (such as epitaxial deposition) can be lengthy, expensive, and inefficient, and may have limited capacity and yield. Operations may also be limited by the modularity of the application. Furthermore, the hardware may involve relatively large sizes, occupying a significant footprint in the manufacturing facility. Additionally, the process may involve inhomogeneities, which can impair device performance and / or reduce yield. For example, gas activation may be limited and / or may involve non-uniform activation, which can result in limited and / or non-uniform film growth and / or doping concentration. For instance, gas activation may be limited at relatively low processing temperatures used for device production (such as complementary field-effect transistor (CFET) devices). Furthermore, relatively high processing temperatures may involve unintended dopant diffusion and / or impair device performance.

[0004] Therefore, there is a need for equipment and methods to improve semiconductor processing. Summary of the Invention

[0005] This disclosure relates to plasma injection configurations for processing chambers, and related equipment, processing chamber kits, and methods for semiconductor manufacturing.

[0006] In one or more embodiments, a processing chamber suitable for use in semiconductor manufacturing includes: one or more sidewalls; a window that at least partially defines a processing volume; and a substrate support disposed within the processing volume. The processing chamber includes: one or more heat sources operable to heat the processing volume; a flow housing at least partially disposed outside the one or more sidewalls; and one or more radio frequency (RF) coils at least partially disposed around the flow housing.

[0007] In one or more embodiments, a chamber assembly suitable for semiconductor manufacturing includes: a substrate support having a first external dimension; a first plate having a second external dimension larger than the first external dimension; and a second plate. The second plate has a third external dimension larger than the second external dimension.

[0008] In one or more embodiments, a method of substrate processing includes: heating a substrate on a substrate support to a target temperature; flowing a first processing gas to a first flow level aligned with the substrate; and flowing plasma to the first flow level. Attached Figure Description

[0009] To gain a more detailed understanding of the features of this disclosure, the briefly summarized disclosure can be described in more detail with reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the drawings merely illustrate exemplary embodiments and should not be construed as limiting their scope, allowing for other equivalent embodiments.

[0010] Figure 1 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0011] Figure 2A This is a schematic partial top cross-sectional view of a processing chamber according to one or more embodiments.

[0012] Figure 2B This is a schematic side cross-sectional view of a flow housing assembly according to one or more embodiments.

[0013] Figure 3-5 This is a schematic side cross-sectional view of a processing chamber according to one or more embodiments.

[0014] Figure 6 It is a schematic perspective view of the side of a processing chamber according to one or more embodiments.

[0015] Figure 7 This is a schematic block diagram view of a method for substrate processing in semiconductor manufacturing according to one or more embodiments.

[0016] For ease of understanding, the same reference numerals have been used where possible to indicate common elements in the figures. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0017] This disclosure relates to plasma injection configurations for processing chambers, and related apparatus, chamber kits, and methods for semiconductor manufacturing. In one or more embodiments, multiple levels are used for gas and plasma injection. In one or more embodiments, plasma is used to activate the gas during epitaxial deposition operations at relatively low temperatures.

[0018] This disclosure contemplates terms such as “couples,” “coupling,” “couple,” and “coupled” that may include, but are not limited to, joining, embedding, welding, fusion, welding together, interference fit, and / or fastening, such as by using pins, threaded fasteners, pins, and / or screws. This disclosure contemplates terms such as “couples,” “coupling,” “couple,” and “coupled” that may include, but are not limited to, integral forming. This disclosure contemplates terms such as “couples,” “coupling,” “couple,” and “coupled” that may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components (such as connectors, blocks, and / or frames).

[0019] Figure 1 This is a schematic side cross-sectional view of a processing chamber 100 according to one or more embodiments. The processing chamber 100 is a deposition chamber. In one or more embodiments, the processing chamber 100 is suitable for semiconductor manufacturing. In one or more embodiments, the processing chamber 100 is an epitaxial deposition chamber. The processing chamber 100 is used to grow an epitaxial film on a substrate 102, and the processing chamber 100 is used to supply plasma for plasma operations (such as plasma-assisted film deposition, supplying ions to the substrate 102, pre-cleaning of the substrate 102, etching of the substrate 102, and / or cleaning of the processing chamber 100). In one or more embodiments, the processing chamber 100 forms a precursor crossflow on the top surface 150 of the substrate 102. The processing chamber 100 is used to... Figure 1 The processing conditions are displayed.

[0020] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form the chamber body. Disposed within the chamber body are a substrate support 106, a plate 108, one or more heat sources 141, 143, and a window 110 (e.g., a lower window, such as a lower dome). The window 110 is formed of an energy-transmitting material, such as transparent quartz. In one or more embodiments, the plate 108 is a window, such as an upper window, such as an upper dome. In this embodiment, the plate 108 may be formed of an energy-transmitting material, such as transparent quartz. The one or more heat sources 141, 143 include a plurality of lower heat sources 143 operable to heat the processing volume 136 from one side of the substrate 102 (e.g., from below the substrate 102). In one or more embodiments, one or more heat sources 141, 143 include a plurality of upper heat sources 141 operable to heat the processing volume 136 from a second side of the substrate 102 (e.g., from above the substrate 102). The chamber body and plate 108 at least partially define the processing volume 136. In one or more embodiments, the heat sources 141, 143 include lamps (such as halogen lamps or UV lamps). This disclosure contemplates the possibility of using other heat sources (attached to or replacing lamps) for the various heat sources described herein. For example, resistance heaters, microwave-driven heaters, light-emitting diodes (LEDs), lasers (e.g., laser diodes), and / or any other suitable heat sources, alone or in combination, may be used for the various heat sources described herein.

[0021] A substrate support 106 is disposed within the processing volume 136 and between the plate 108 and the window 110. The substrate support 106 is positioned above one or more heat sources 141, 143 and supports the substrate 102. The plate 108 is disposed between the substrate support 106 and the cover 154 of the processing chamber 100. In one or more embodiments, the substrate support 106 includes a base. Other substrate supports are contemplated in this disclosure (e.g., including a substrate carrier and / or one or more annular segments supporting one or more external regions of the substrate 102). An upper heat source is disposed between the cover 154 and the plate 108. A plurality of lower heat sources 143 are disposed between the window 110 and the base plate 152. The plurality of lower heat sources 143 form part of a lower heat source module 145.

[0022] The processing volume 136 and the purification volume 138 are located between the plate 108 and the window 110. The processing volume 136 and the purification volume 138 are part of the internal volume of the processing chamber 100. One or more gaskets 111, 163 are disposed inside the chamber body.

[0023] The substrate support 106 includes a top surface on which the substrate 102 is disposed. The substrate support 106 is coupled to the shaft 118. In one or more embodiments, the substrate support 106 is coupled to the shaft 118 via one or more arms 119 coupled to the shaft 118. The shaft 118 is coupled to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft 118 and / or the substrate support 106 within the processing volume 136.

[0024] The substrate support 106 may include lifting rod holes 107 disposed therein. Each lifting rod hole 107 is sized to accommodate a lifting rod 132 for lifting the substrate 102 from the substrate support 106 before or after a deposition process. When the substrate support 106 descends from a processing position to a transport position, the lifting rod 132 is reliably secured to a lifting rod stop 134. The lifting rod stop 134 may include a plurality of arms 139 attached to a shaft 135.

[0025] The flow module 112 includes one or more gas inlets 114 (e.g., multiple gas inlets), one or more purge gas inlets 164 (e.g., multiple purge gas inlets), and one or more gas exhaust outlets 116. The one or more gas inlets 114 are part of the injection portion 113 of the chamber body, and the one or more gas exhaust outlets 116 are part of the exhaust portion 115 of the chamber body. The one or more gas inlets 114 and the one or more purge gas inlets 164 are located on the side of the flow module 112 opposite to the one or more gas exhaust outlets 116. A preheating ring 117 is located below the one or more gas inlets 114 and the one or more gas exhaust outlets 116. The preheating ring 117 is located above the one or more purge gas inlets 164. The preheating ring 117 may comprise a complete ring or one or more ring segments. One or more gaskets 111, 163 are located on the inner surface of the flow module 112 and protect the flow module 112 from reactive gases used during deposition and / or cleaning operations. Multiple gas inlets 114 and multiple purified gas inlets 164 are each positioned parallel to the top surface 150 of the substrate 102 disposed within the processing volume 136, allowing individual flow of one or more processing gases P1 and one or more purified gases P2. The multiple gas inlets 114 are fluidly connected to one or more processing gas sources 151 and one or more clean gas sources 153. The multiple purified gas inlets 164 are fluidly connected to one or more purified gas sources 162. One or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more processing gases P1 supplied using the one or more processing gas sources 151 may include one or more reactive gases (such as silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (such as nitrogen (N2) and / or hydrogen (H2)). The one or more purified gases P2 supplied using the one or more purified gas sources 162 may include one or more inert gases (such as argon (Ar), helium (He), and / or nitrogen (N2)). One or more cleaning gases supplied using one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one or more embodiments, one or more processing gases P1 include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0026] One or more plasma gas sources 158 are also fluidly connected to gas inlets(s) 114. The one or more plasma gas sources 158 supply one or more plasma precursor gases that can be ignited into plasma. A flow housing 171 is at least partially disposed outside the flow module 112 and is fluidly connected to the flow module 112 via one or more flow channels 170 disposed between the flow housing 171 and the gas inlets 114. One or more radio frequency (RF) coils 172 are at least partially disposed around the flow housing 171. For example, one or more RF coils 172 may be wound around the flow housing 171. As plasma gas P3 flows out of the plasma gas source 158 and through the flow housing 171, the one or more RF coils ignite the plasma gas P3 into plasma PS1, which then flows through one or more flow channels 170 and into the gas inlets 114. For example, one or more flow channels 170 may be formed in one or more gas chambers. As gas P3 flows, an RF current flows through the one or more RF coils, which apply a voltage across gas P3 to ignite gas P3 into plasma PS1. This disclosure contemplates a positionable ion filter such that the ion filter filters ions from the plasma PS1 before the plasma PS1 flows over the substrate 102. The ion filter may include conductive materials, including, for example, silicon carbide (SiC), molybdenum, tungsten, stainless steel, and / or aluminum (such as anodized aluminum). The ion filter may include an ion blocking plate. One or more plasma gases P3 supplied using one or more plasma gas sources 158 may include one or more precursor gases for generating plasma, such as xenon (Xe2), neon (Ne2), helium (He2), fluorine (F2), krypton (Kr2), and / or any mixture thereof (such as krypton fluoride (KrF)). In one or more embodiments, the plasma gas P3 includes one or more silicon-containing gases (e.g., silane, dichlorosilane (DCS), trichlorosilane (TCS), disilane (DS), and / or tetrachlorosilane) mixed with a carrier gas (e.g., argon, hydrogen, and / or helium). In one or more embodiments, the plasma gas P3 includes one or more dopant gases, such as germanane, diborane, and / or phosphorus. Other gases are contemplated for the plasma gas P3. Other precursor gases could be considered for plasma generation.

[0027] One or more gas exhaust outlets 116 are further connected to or include an exhaust system 109. The exhaust system 109 fluidly connects one or more gas exhaust outlets 116 to an exhaust pump 157. The exhaust system 109 may facilitate controlled deposition of layers on the substrate 102. The exhaust system 109 is positioned on the opposite side of the processing chamber 100 relative to the flow module 112.

[0028] Processing chamber 100 includes one or more gaskets 111, 163 (e.g., lower gasket 111 and upper gasket 163). Flow module 112 (which may be at least a portion of the sidewall of processing chamber 100) includes one or more gas inlets 114 in fluid communication with processing volume 136. The one or more gas inlets 114 are in fluid communication with one or more flow gaps between upper gasket 163 and lower gasket 111.

[0029] During a deposition operation (e.g., an epitaxial growth operation), one or more processing gases P1 flow through one or more gas inlets 114, through one or more gaps, and into a processing volume 136 to flow over the substrate 102.

[0030] This disclosure also contemplates the possibility that one or more purge gases P2 may be supplied to and discharged from purge volume 138 (through one or more purge gas inlets 164) during deposition operations. The one or more purge gases P2 flow simultaneously with the flow of one or more process gases P1. The one or more process gases P1 are discharged through the gap between the upper liner 163 and the lower liner 111 and through one or more gas exhaust outlets 116. The one or more purge gases P2 may be discharged through one or more outlet openings and through one or more gas exhaust outlets 116 identical to those of the one or more process gases P1. This disclosure also contemplates the possibility that one or more purge gases P2 may be discharged separately through one or more second gas exhaust outlets, separate from the one or more gas exhaust outlets 116.

[0031] During the cleaning operation, one or more cleaning gases flow through one or more gas inlets 114, through one or more gaps (between the upper liner 163 and the lower liner 111) and into the processing volume 136.

[0032] This disclosure contemplates the possibility that plasma PS1 and one or more process gases P1 may flow simultaneously and / or sequentially relative to each other. In one or more embodiments, during a cleaning operation, plasma gas P3 flows simultaneously through flow housing 171 with process gas P1 (plasma gas P3 may flow together with process gas P1 or flow separately from process gas P1), or flows before or after the flow of one or more process gases P1. Plasma PS1 may flow into process volume 136 before process gas P1 to pre-clean substrate 102. Plasma may flow into process volume 136 after process gas P1 to clean process volume 136 after deposition operation. In one or more embodiments, plasma gas P3 flows simultaneously through flow housing 171 with process gas P1. Plasma PS1 and process gas P1 may flow into process volume 136 simultaneously, wherein plasma PS1 may assist the deposition operation by promoting the activation of (multiple) process gas P1(e.g., by breaking the bonds of process gas P1). This disclosure considers the voltage and / or frequency of RF power 199 that can be varied and / or pulsed onto one or more RF coils 172. The frequency may involve a single frequency or multiple frequencies. Multiple frequencies may be combined.

[0033] Processing chamber 100 includes one or more sensor devices 195, 196, 197, 198 (e.g., metering sensors and / or temperature sensors) configured to measure multiple parameters (e.g., multiple temperatures) within processing chamber 100 and / or multiple metering parameters of substrate 102. In one or more embodiments, the one or more sensor devices 195, 196, 197, 198 include a central sensor device 196 and one or more external sensor devices 195, 197, 198. Controller 190 (described below) can control the one or more sensor devices 195, 196, 197, 198 and can use at least one of the one or more sensor devices 195, 196, 197, 198 to perform multiple methods for analyzing the uniformity of substrate processing. In one or more embodiments, each of the one or more sensor devices 195, 196, 197, 198 includes a sensor comprising one or more of silicon (Si), carbon (C), gallium (Ga), and / or nitrogen (N). In one or more embodiments, one or more sensor devices 195, 196, 197, 198 each include a silicon sensor, a silicon carbide (SiC) sensor, and / or a gallium nitride (GaN) sensor. In one or more embodiments, one or more of sensor devices 195, 196, 197, 198 are pyrometers and / or optical sensors, such as optical pyrometers. This disclosure contemplates the use of sensor devices other than pyrometers, and / or the measurability of one or more of sensor devices 195, 196, 197, 198 for properties other than temperature (such as metrological properties). For example, one or more of sensor devices 195, 196, 197, 198 may measure one or more gas parameters and / or one or more plasma parameters (such as ion density, electron temperature, electron density, ion energy and angular distribution, enthalpy, radical density, and / or absorbance). In one or more embodiments, one or more of sensor devices 195, 196, 197, 198 include a residual gas analyzer, an optical emission spectrometer, an enthalpy probe, a Langmuir probe, a Faraday cup, and / or an absorption spectrometer.

[0034] In one or more embodiments, one or more sensor devices 195, 196, 197, 198 include one or more upper sensor devices 196, 197, 198 disposed above the substrate 102 and adjacent to the cover 154, and one or more lower sensor devices 195 disposed below the substrate 102 and adjacent to the base plate 152. This disclosure contemplates that at least one of the one or more lower sensor devices 195 may be vertically aligned below at least one of the upper sensor devices 196, 197 (such as the outer sensor device 197).

[0035] This disclosure considers that all sensor devices may be located above the plate 108 and / or on or adjacent to the cover 154. For example, one or more lower sensor devices 195 may be omitted.

[0036] Each sensor device 195, 196, 197, 198 may be a single-wavelength sensor device or a multi-wavelength (such as dual-wavelength) sensor device. In one or more embodiments, the processing chamber 100 includes any one, any two, or any three of the four illustrated sensor devices 195, 196, 197, 198. In one or more embodiments, the processing chamber 100 includes one or more additional sensor devices besides the sensor devices 195, 196, 197, 198. In one or more embodiments, the processing chamber 100 may include sensor devices disposed at different locations and / or with different orientations than the illustrated sensor devices 195, 196, 197, 198.

[0037] As shown, controller 190 communicates with processing chamber 100 and is used to control processing and methods, such as those described herein. Controller 190 is configured to receive data or input from sensor readings from one or more sensors, such as sensor devices 195, 196, 197, 198. For example, sensor devices may include: sensor devices monitoring the growth of multiple layers on substrate 102; and / or sensor devices monitoring the temperature of substrate 102, preheating ring 117, substrate support 106, and / or pads 111, 163. As an example, one or more sensor devices 195, 196, 197, 198 may measure the temperature of substrate 102 and / or preheating ring 117, and may control the power of one or more heat sources 141, 143, and / or energy source 176 based on the measured temperature (e.g., using feedback control). As previously described, one or more sensor devices may include, for example, pyrometers. In one or more embodiments, one or more thermocouples (e.g., proximity thermocouples) may be used to attach to or replace the pyrometer, and the power of one or more heat sources 141, 143 and / or energy source 176 may be controlled based on the measured temperature (e.g., using feedback control).

[0038] The controller 190 includes a central processing unit (CPU) 193 (e.g., a processor), memory 191 containing instructions, and support circuitry 192 for the CPU 193. The controller 190 can control various items directly or via other computers and / or controllers. In one or more embodiments, the controller 190 is communicatively coupled to a dedicated controller, and the controller 190 functions as a central controller.

[0039] Controller 190 is any form of general-purpose computer processor used in an industrial environment to control various substrate processing chambers and equipment, and subprocessors thereon or therein. Memory 191 (or non-transitory computer-readable medium) is one or more readily available memory types, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4 and the like)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage. Support circuitry 192 of controller 190 is coupled to CPU 193 for supporting CPU 193. Support circuitry 192 includes cache, power supply, frequency circuitry, input / output circuitry, and subsystems and the like. Operating parameters (e.g., power supplied to one or more heat sources 141, 143 and / or one or more RF coils 172, cleaning formula and / or treatment formula) and operations are stored in memory 191 as software routines to be executed or invoked to turn controller 190 into a dedicated controller for controlling the operation of the various chambers / modules described herein. Controller 190 is configured to perform any of the operations described herein (such as the operation of method 700). When executed, instructions stored in memory cause one or more of the operations described herein (such as the operation of method 700) to be performed in relation to processing chamber 100. Controller 190 and processing chamber 100 are at least part of a system for processing a substrate.

[0040] The various operations described herein can be performed automatically using the controller 190, or can be performed automatically or manually, with some operations performed by the user.

[0041] The controller 190 is configured to control the power, deposition, cleaning, rotational position, heating, and gas flow through the processing chamber 100 to one or more heat sources 141, 143, and / or energy sources 176 by providing outputs to sensor devices 195, 196, 197, 198, one or more heat sources 141, 143, and / or energy sources 176, processing gas source 151, purified gas source 162, motion component 121, and / or exhaust pump 157.

[0042] During processing, in one or more embodiments, substrate 102 is heated to a target temperature of 400 degrees Celsius or higher, or 600 degrees Celsius or lower. In one or more embodiments, the target temperature for substrate 102 is in the range of 380 degrees Celsius to 600 degrees Celsius, for example, 400 degrees Celsius to 500 degrees Celsius. In one or more embodiments, the target temperature for substrate 102 is below 500 degrees Celsius. In one or more embodiments, the target temperature for substrate 102 is 400 degrees Celsius or lower, such as below 200 degrees Celsius (e.g., about 150 degrees Celsius).

[0043] Figure 2A This is a schematic partial top cross-sectional view of a processing chamber 200 according to one or more embodiments. The processing chamber 200 is similar to... Figure 1 The processing chamber 100 shown includes one or more aspects, features, components, operations, and / or properties thereof.

[0044] Processing chamber 200 includes a plurality of flow housings 171A, 171B, and 171C. Each flow housing 171A, 171B, and 171C includes one or more RF coils 172A, 172B, and 172C, at least partially disposed around the individual flow housing 171A, 171B, and 171C. In one or more embodiments, flow housings 171A, 171B, and 171C each include a plurality of cooling channels 271A, 271B, and 271C. One or more flow channels 170 connect flow housings 171A, 171B, and 171C to processing volume 136.

[0045] In one or more embodiments, the RF coils 172 surrounding the flow housing are independently controlled by supplying power to the individual RF coils 172 independently of each other. One or more RF power sources 199A, 199B, 199C are connected to the RF coils 172A, 172B, 172C, and the power sources 199A, 199B, 199C can control the power applied to the individual RF coils 172A, 172B, 172C respectively.

[0046] Figure 2B This is a schematic side cross-sectional view of a flow housing assembly 250 according to one or more embodiments. The flow housing assembly 250 includes a flow housing 171B containing an internal volume 272 to allow gas passage. Cooling channels 271 are disposed within the flow housing 171 (e.g., formed in one or more sidewalls of the flow housing 171) to reduce or eliminate overheating of the flow housing 171. The cooling channels 271 can flow with any cooling fluid to cool the plasma device, such as water and / or air. An RF coil 172B surrounds the flow housing 171 to apply voltage to the gas and ignite the gas into plasma.

[0047] Figure 3 This is a schematic side cross-sectional view of a processing chamber 300 according to one or more embodiments.

[0048] Processing chamber 300 is similar to Figure 1 The processing chamber 100 shown includes one or more aspects, features, components, operations, and / or properties thereof.

[0049] The processing chamber 300 includes a door 301 (e.g., a slit valve), a first plate 310, a second plate 311, and one or more gaskets 315. The door 301 is positioned above the gas exhaust outlet 116. The one or more gaskets 315 may comprise a single gasket or multiple gaskets stacked on top of each other. The first plate 310 has an outer dimension D1 greater than the outer dimension D2 of the substrate support 106. The second plate 311 has an outer dimension D3 greater than the outer dimension D1 of the first plate 310. The first plate 310 and the second plate 311 are made of an opaque material (such as white quartz, black quartz, silicon carbide, and / or graphite coated with silicon carbide). In one or more embodiments, the first plate 310 and / or the second plate 311 have a solid cross-section on their respective outer dimensions D1, D3. In one or more embodiments, the second plate 311 is opaque, and the upper heat source 141 is omitted, while the lower heat source 143 is included. Figure 3 In one or more embodiments, the second plate 311 is transparent, and the upper heat source 141 and the lower heat source 143 are included. Figure 3The second plate 311 may include at least one reflective outer surface, such as a reflective lower surface facing the first plate 310. In one or more embodiments, the at least one reflective outer surface has a reflectivity greater than about 90%, such as greater than about 98%, for wavelengths of about 150 nm or higher, such as 150 nm to about 15000 nm, such as about 700 nm to about 15000 nm, about 700 nm to 1000 nm, or about 1000 nm to about 15000 nm. In one or more embodiments, the at least one reflective outer surface has a reflectivity greater than about 90%, such as greater than about 98%, for wavelengths in the infrared and / or ultraviolet ranges. A plurality of spacers 312 are disposed on the top surfaces of the substrate support 106 and the first plate 310. The spacers 312 may include, for example, sleeves and / or rods. When the substrate support 106 is raised or lowered, the plurality of spacers 312 help support and raise or lower the first plate 310 and the second plate 311. When the substrate support 106 is raised, a plurality of spacers 312 disposed on the substrate support 106 can contact the bottom surface of the first plate 310 to engage and raise the first plate 311. The raising will then cause the first plate 310 and the substrate support 106 to rise together. The plurality of spacers 312 disposed on the top surface of the first plate 310 will then contact the bottom surface of the second plate 311. As the substrate support 106 is raised, continued raising will cause the second plate 311 to rise together with the first plate 310.

[0050] This disclosure considers that (multiple) plasma-assisted processing gases P1 may flow out from the side of the substrate 102, and that (multiple) processing gases P1 may flow out from the side of the substrate 102 when plasma is omitted. This disclosure also considers that (multiple) plasma-assisted processing gases P1 may flow out from the side of the substrate 102, and that (multiple) processing gases P1 may flow out from above the substrate 102 when plasma is omitted.

[0051] In one or more embodiments, the processing chamber 300 includes a flow housing 171 as described above and one or more RF coils 172. The flow housing 171 may be as follows: Figure 1 The processing chamber 100 depicted in the diagram is disposed outside the flow module 112, or the flow housing 171 may be at least partially disposed inside the flow module 112 as depicted in the processing chamber 300. The RF coil 172 may be disposed as... Figure 1 The processing chamber 100 is depicted positioned around the outer periphery of the flow housing 171, or the RF coil 172 may be as follows: Figure 3 The processing chamber 300 is depicted as being disposed inside the flow housing 171 (e.g., embedded in one or more sidewalls of the flow housing 171).

[0052] Figure 3The processor chamber 300 is depicted in a position configured for deposition processing. During deposition processing, a process gas P1 may flow from a process gas supply 151. The process gas P1 flows through a flow housing 171 and a gas inlet 114A into a first flow level 320. In one or more embodiments, in addition to or instead of flowing through gas inlet 114A, the process gas P1 flows through a second gas inlet 114B to bypass the flow housing 171. As an example, process gases(s) activated without plasma assistance may flow through gas inlet 114A and over a substrate 102. A third plate may be provided to at least partially fluidly isolate the gas flowing through the second gas inlet 114B from the gas flowing through gas inlet 114A. The third plate may include one or more aspects, features, components, operations, and / or properties of the first plate 310. The third plate may have an external dimension smaller than the external dimension D1. During deposition processing, a substrate support 106 is positioned such that the substrate 102 is aligned with the first flow level 320. In one or more embodiments, plasma gas P3 simultaneously flows from plasma gas supplier 158 through flow housing 171, wherein plasma gas P3 is ignited by one or more RF coils 172. Plasma PS1 then flows simultaneously with process gas P1 to first flow level 320 to assist process gas P1 in the deposition process. Process gas P1 and plasma PS1 then flow to gas exhaust outlet 116 and exit process volume 136 through common exhaust 309.

[0053] In one or more embodiments, during the deposition process, one or more purge gases P2 flow from purge gas supplier 162 through purge gas inlet 164 and third gas inlet 114C to second flow level 321, third flow level 322, fourth flow level 323, and fifth flow level. The purge gas P2 helps maintain pressure throughout the processing chamber 300 to prevent plasma and processing gases from leaking from the first flow level 320 into other areas within the processing chamber 300. The purge gas P2 then flows through multiple gas exhaust outlets 116 to a common exhaust 309.

[0054] Figure 4A processing chamber 300 is depicted during the cleaning process. At the cleaning point, a substrate support 106 descends such that the substrate 102 is aligned with a second flow level 321. As the substrate support 106 descends, both a first plate 310 and a second plate 311 descend until the bottom surface of the second plate 311 contacts at least one of one or more pads 315. Because the outer dimensions of the second plate are larger than those of the substrate support 106 and the first plate 310, the second plate 311 contacts at least one of one or more pads 315. Since the first plate has a larger outer dimension than the substrate support 106, the first plate 310 then descends until its bottom surface contacts at least one of one or more pads 315. The first plate 310 stopping on the one or more pads 315 prevents it from descending further with the substrate support 106. The first plate 310 is positioned on the one or more pads 315 such that it is aligned with the first flow level 320. Next, the substrate support 106 is lowered so that the substrate 102 is aligned with the second flow level 321. A distance D in the range of about 8 mm to about 70 mm separates the top surface of the substrate support 106 from the bottom surface of the first plate 320.

[0055] Figure 4 The processing chamber 300 is depicted in a position configured for cleaning processing. In one or more embodiments, during cleaning processing, cleaning gas P4 (or etchant gas) may flow from cleaning gas supplier 153. Cleaning gas P4 flows through flow housing 171 and gas inlet 114A into a first flow level 320. In more than one embodiment, in addition to flowing through gas inlet 114A, or instead of flowing through gas inlet 114A, cleaning gas P4 flows through a second gas inlet 114B. During cleaning processing, a first plate 310 is aligned with the first flow level 320. In one or more embodiments, plasma gas P3 simultaneously flows from plasma gas supplier 158 through flow housing 171, wherein plasma gas P3 is ignited into plasma PS1 by one or more RF coils 172. Plasma PS1 then flows together with cleaning gas P4 to the first flow level 320 to assist cleaning gas P4 in cleaning processing. Cleaning gas P4 and plasma PS1 then flow to gas exhaust outlet 116 and exit processing volume 136 through common exhaust 309. In one or more embodiments, when plasma PS1 is omitted, cleaning gas P4 flows to a first flow level. In one or more embodiments, when cleaning gas P4 is omitted, plasma PS1 flows to a first flow level.

[0056] In one or more embodiments, during cleaning, one or more purge gases P2 flow from purge gas supplier 162 through purge gas inlet 164 and third gas inlet 114C to second flow level 321, third flow level 322, fourth flow level 323, and fifth flow level. Purge gas P2 helps maintain pressure throughout the processing chamber 300 to ensure that plasma PS1 and cleaning gas P4 do not leak from first flow level 320 into other areas within the processing chamber 300. Purge gas P3 then flows through multiple gas exhaust outlets 116 into a common exhaust duct 309.

[0057] Figure 5 The processing chamber 300 is depicted in a position configured for a second deposition process. In one or more embodiments, during the second deposition process, a processing gas P1 may flow from a processing gas supply 151. The processing gas P1 flows through a third gas inlet 114C into a second flow level 321. During the deposition process, a substrate support 106 is positioned such that a substrate 102 is aligned with the first flow level 321. The processing gas P1 flows over the substrate 102 to a gas exhaust outlet 116 and exits the processing volume 136 through a common exhaust 309.

[0058] In one or more embodiments, during the second deposition process, one or more purge gases P2 flow from purge gas supplier 162 through purge gas inlet 164, second gas inlet 114B, and gas inlet 114A with flow housing 171 to first flow level 320, third flow level 322, fourth flow level 323, and fifth flow level. The purge gas P2 helps maintain pressure throughout the processing chamber 300 to facilitate prevention of leakage of processing gas P1 from the first flow level 320 into other areas within the processing chamber 300. The purge gas P2 then flows through multiple gas exhaust outlets 116 and into a common exhaust manifold 309. Figure 5 The processing gas P1 can be replaced by a cleaning (or etching) gas P4, such as that used to etch substrate 107. For example, Figure 5 The operation can be etched in Figure 3 The film deposited on the substrate 102, or Figure 5 The operation can be performed in Figure 3 The substrate 102 is cleaned before the deposition operation.

[0059] Figure 6 This is a schematic perspective view of a side view of a processing chamber 600 according to one or more embodiments. The processing chamber 600 is similar to... Figure 1 The processing chamber 100 shown includes one or more aspects, features, components, operations, and / or properties thereof.

[0060] Processing chamber 600 includes a remote plasma source (RPS) 610 fluidly coupled to a plurality of plasma connectors 630 fluidly connected to a plurality of plasma inlets 620 coupled to flow module 112. This allows plasma to flow from RPS 610 into processing chamber 600 to assist in deposition and / or cleaning processes. Plasma originating from RPS 610 may flow separately or together with plasma formed in flow housing 171 as described above. Flow housings 171A, 171B, and 171C and plasma connectors 630 facilitate the supply of plasma to individual flow levels 320, 321 in multiple zones.

[0061] Figure 7 This is a schematic block diagram view of a method 700 for substrate processing in semiconductor manufacturing according to one or more embodiments.

[0062] Operation 701 of method 700 includes heating a substrate positioned on a substrate support in a processing chamber from one side of the substrate. The substrate is disposed within a processing volume of the processing chamber. The substrate can be heated from either side or one side. Heating includes heating the substrate to a target temperature. In one or more embodiments, the target temperature is below 500 degrees Celsius. In one or more embodiments, the target temperature is 400 degrees Celsius or below.

[0063] Operation 702 includes flowing a first process gas to a first flow level. The first process gas flows over a substrate aligned with the first flow level.

[0064] Operation 703 includes supplying plasma to a first flow level within the processing volume of the processing chamber. The plasma may be generated outside the processing volume and then flow into the processing volume. For example, a plasma precursor gas may be used... Figure 1 The flow passes through the flow housing 171. Power can then be applied to an RF coil 172, which is disposed at least partially surrounding (e.g., around) the flow housing 171, to generate plasma. The generated plasma then flows to a first flow level. In one or more embodiments, the plasma for operation 703 is supplied during the first process gas flow of operation 702, and the plasma flows over the substrate. In one or more embodiments, the plasma for operation 703 is supplied before or after the first process gas flow of operation 702.

[0065] Operation 705 includes moving the substrate. The substrate can be moved, for example, by raising or lowering the substrate support.

[0066] Operation 707 includes flowing a second processing gas. After the movement in operation 705, the second processing gas may be supplied to a first flow level or a second flow level aligned with the substrate.

[0067] Operation 708 includes maintaining the processing volume under pressure. In one or more embodiments, the pressure is maintained below 60 Torr, such as in the range of 0 Torr to 30 Torr. In one or more embodiments, the pressure is maintained at less than 1 Torr, such as in the range of 0 Torr to 5 mTorr.

[0068] Advantages of this disclosure include reliable gas activation (e.g., at relatively low processing temperatures); adjustable gas activation; modularity of plasma operation and epitaxial deposition operation in a single chamber; modularity of chamber applications; more uniform gas activation; temperature uniformity (e.g., temperature uniformity of the outer regions of the substrate); reduced gas consumption and waste; increased growth rate; and more uniform film growth and / or dopant concentration. As an example, ions and / or free radicals can be used to activate the gas during processing, to supplement or replace electromagnetic radiation (such as infrared and / or ultraviolet radiation).

[0069] Advantages also include enhanced device performance; reduced or eliminated accidental doping diffusion; efficient processing; and increased throughput. As an example, gas activation facilitates substrate target temperatures below 500 degrees Celsius, such as target temperatures in the range of 380 to 500 degrees Celsius. For instance, when the substrate temperature is approximately 400 degrees Celsius, activated gases can be used for processing operations.

[0070] One or more aspects that can be incorporated into this disclosure are considered. As an example, one or more aspects, characteristics, components, operations, and / or properties of processing chamber 100, flow module 112,(multiple) flow housings 171A, 171B, 171C,(multiple) RF coils 172A, 172B, 172C, plasma gas source 158, cooling channel 271, processing chamber 300, first plate 310, second plate 311,(multiple) gaskets 315, first flow level 320, second flow level 321, processing chamber 600, RPS 610, and / or method 700 may be incorporated. Furthermore, one or more aspects of this disclosure are considered to include some or all of the advantages described above.

[0071] While the foregoing relates to embodiments of this disclosure, other and further embodiments of this disclosure may be devised without departing from its essential scope, the scope of which is defined by the following claims.

Claims

1. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: One or more sidewalls; A window, which at least partially defines the processing volume; A substrate support member disposed within the processing volume; One or more heat sources, the one or more heat sources being operable to heat the processing volume; A flow enclosure, wherein the flow enclosure is at least partially disposed outside the one or more sidewalls; and One or more radio frequency (RF) coils, said one or more RF coils being disposed at least partially around the flow housing.

2. The processing chamber of claim 1, wherein the flow housing includes one or more cooling channels.

3. The processing chamber of claim 1, wherein the flow housing comprises quartz or silicon carbide.

4. The processing chamber of claim 1, wherein the processing chamber further comprises a second flow housing and one or more second RF coils disposed at least partially around the flow housing.

5. The processing chamber of claim 4, wherein the first power supplied to the one or more RF coils is independently controllable relative to the second power supplied to the one or more second RF coils.

6. The processing chamber of claim 1, wherein the processing chamber further comprises a third flow housing and one or more third RF coils disposed at least partially around the third flow housing.

7. A chamber kit suitable for semiconductor manufacturing, the chamber kit comprising: A substrate support member having a first external dimension; A first plate, the first plate having a second external dimension larger than the first external dimension; and The second plate has a third external dimension that is larger than the second external dimension.

8. The chamber assembly of claim 7, wherein the first plate and the second plate are respectively composed of quartz or silicon carbide.

9. The chamber kit of claim 7, wherein the chamber kit further comprises a flow housing and one or more radio frequency (RF) coils.

10. The chamber assembly of claim 9, wherein the flow housing includes one or more cooling channels.

11. The chamber kit of claim 9, further comprising a second flow housing and one or more second RF coils disposed at least partially around the second flow housing.

12. The chamber assembly of claim 7, wherein the first plate has a solid cross-section spanning the second external dimension.

13. The chamber assembly of claim 7, wherein the second plate has a solid cross-section spanning the third external dimension.

14. The chamber assembly of claim 7, wherein the second plate comprises at least one reflective outer surface.

15. The chamber assembly of claim 7, wherein the first plate and the second plate each comprise at least one opaque outer surface.

16. A method for processing a substrate, the method comprising: Heat the substrate on the substrate support to the target temperature; The first processing gas is flowed to a first flow level aligned with the substrate; and The plasma is flowed to the first flow level.

17. The method of claim 16, wherein the plasma flows simultaneously with the flow of the first processing gas to the first flow level.

18. The method of claim 16, wherein: The flow of the first processed gas includes: causing the first processed gas to flow through a flow housing; and The flow of the plasma includes: The plasma gas flows through the flow shell; and Power is applied to the plasma gas to generate the plasma.

19. The method of claim 16, further comprising: Lower the substrate support; and The second processing gas is flowed to the first flow level.

20. The method of claim 16, further comprising: Lower the substrate support; The second processing gas is flowed to a second flow level aligned with the substrate.

Images