Highly conformal coating on textured surfaces of process chamber components

Abstract

A plasma processing chamber component, wherein a body has an upper body surface having a plurality of underlying texture features disposed therein having a first root mean square (RMS) surface roughness; and a conformal layer disposed over the upper body surface forming an upper component surface having a second RMS surface roughness greater than or equal to about 90% of the first RMS surface roughness.

Description

Technical Field

[0001] Embodiments of this disclosure generally relate to chamber components used in plasma processing chambers for semiconductor processing. Background Technology

[0002] Plasma processing chambers can be used to process substrates with excited process gases (such as plasma) to manufacture semiconductor substrates (such as integrated circuit chips and the like). The processing chamber includes a process area defined by walls and other structures, and includes various components for introducing process gases, a gas exciter for exciting the process gases, and an exhaust system for exhausting and controlling the pressure of the process gases within the chamber. The processing chamber can be used, for example, to deposit materials onto a substrate, or onto chamber components within the process chamber, such as the inner surfaces of chamber sidewalls, top plates, liners, deposition rings, and / or the like. Such material unintentionally deposited on chamber components may peel off from the chamber components, or otherwise migrate or detach from the chamber components, thereby forming unwanted or irrelevant particles within the chamber, which can contaminate the substrate being processed.

[0003] There is a need for an improved chamber component that prevents or otherwise minimizes pseudo-detachment or peeling of material deposited thereon. Summary of the Invention

[0004] This paper provides a chamber component having a highly conformal coating disposed on top of a textured surface, along with a method for forming such a chamber component. The coating provides strong adhesion and a larger surface area for material deposited in the substrate processing chamber, thereby reducing material peeling from the chamber component.

[0005] In one embodiment, a plasma processing chamber component includes a body having an upper body surface having a plurality of underlying texture features disposed therein and having a first RMS surface roughness from about 150 micrometers to about 1500 micrometers; and a conformal layer disposed on the upper body surface to form an upper component surface having a second RMS surface roughness, wherein the second RMS surface roughness is greater than or equal to about 90% of the first RMS surface roughness.

[0006] In one embodiment, the plasma processing chamber includes a chamber housing; and a plasma processing chamber component disposed within the chamber housing; the plasma processing chamber component includes a body having an upper body surface having a plurality of underlying texture features disposed therein and having a first RMS surface roughness from about 150 micrometers to about 1500 micrometers; and a conforming layer disposed on the upper body surface, comprising alumina, titanium oxide, or a combination thereof, forming an upper component surface having a second RMS surface roughness and a porosity of less than or equal to about 5%, wherein the second RMS surface roughness is greater than or equal to about 90% of the first RMS surface roughness.

[0007] In one embodiment, the plasma processing chamber component includes a body having an upper body surface comprising a plurality of underlying texture features disposed in the body using an electron beam, the plurality of underlying texture features comprising a plurality of peaks separated by valleys having an average depth of about 150 micrometers to 1500 micrometers and an average peak-to-peak separation distance of about 100 micrometers to 500 micrometers, such that the upper body surface has a first RMS surface roughness; and a conforming layer disposed on the upper body surface, comprising alumina, titanium oxide, or a combination thereof, forming the upper component surface, wherein the conforming layer has an average thickness of about 40 micrometers to 500 micrometers, a uniform thickness of + / - 10% of the average thickness, and a porosity of less than or equal to about 2%, such that the upper component surface has a second RMS surface roughness greater than or equal to about 90% of the first RMS surface roughness.

[0008] Other and additional embodiments of this disclosure are described below. Attached Figure Description

[0009] The embodiments of this disclosure, which have been briefly summarized above and discussed in more detail below, can be understood with reference to the illustrative embodiments depicted in the accompanying drawings. However, the drawings only illustrate typical embodiments of this disclosure and should therefore not be considered as limiting its scope, as other equally effective embodiments are permissible.

[0010] Figure 1 This is a schematic cross-sectional side view of the PVD chamber.

[0011] Figure 2 This is a cross-sectional side view of a chamber component with a positive-form coating according to an embodiment disclosed herein.

[0012] Figure 3 This is a cross-sectional side view of a portion of a chamber component having an alternative positive coating according to an embodiment disclosed herein.

[0013] For ease of understanding, the same reference numerals have been used to denote common elements in the figures where possible. The figures are not drawn to scale and have been simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0014] The implementation includes a component of a substrate processing chamber, also referred to herein as a "chamber component," which has a highly positive coating disposed on top of a textured surface. This highly positive coating has strong adhesion and a larger surface area for materials deposited in the substrate processing chamber. This highly positive coating reduces the peeling or otherwise displacement of material previously deposited on the surface from the surface of the chamber component during substrate processing.

[0015] As used herein, root mean square roughness (RMS roughness) represents a dispersion parameter characterizing surface roughness, obtained by squaring each height value of the measured surface in the dataset and then taking the square root of the mean. For the purposes of this document, RMS roughness can be determined by contact or optical profilometer according to recognized methods and practices in the art.

[0016] In one embodiment, the chamber component includes a body having an upper body surface comprising a plurality of underlying texture features disposed therein and having a first RMS surface roughness; and a conformal layer disposed on the upper body surface to form an upper component surface having a second RMS surface roughness, wherein the second RMS surface roughness is greater than or equal to about 90% of the first RMS surface roughness. In one embodiment, the conformal layer disposed on the upper body surface comprises alumina, titanium oxide, tungsten oxide, or a combination thereof. In one embodiment, the conformal layer disposed on the upper body surface has a porosity of less than or equal to about 5%. In one embodiment, the first RMS surface roughness and the second RMS surface roughness are about 150 micrometers to about 1500 micrometers, respectively.

[0017] In one embodiment, the plurality of underlying texture features of the subject include a plurality of peaks separated by valleys, wherein the valleys have an average depth of about 150 micrometers to 1500 micrometers and an average peak-to-peak separation distance of about 100 micrometers to 500 micrometers.

[0018] In one embodiment, the conforming layer has an average thickness of approximately 40 micrometers to 500 micrometers. In another embodiment, the conforming layer has a uniform thickness of + / - 10% of the average thickness.

[0019] In one embodiment, the linear temperature expansion coefficient of the conformal layer is about 45% to 110% of the linear temperature expansion coefficient of the main component (e.g., the material used to make the processing chamber component or assembly). In one embodiment, the conformal layer comprises alumina, titanium oxide, or a combination thereof. In one embodiment, the conformal layer comprises alumina. In one embodiment, the conformal layer comprises titanium oxide. In one embodiment, the conformal layer is substantially composed of alumina. In one embodiment, the conformal layer is substantially composed of titanium oxide.

[0020] In one embodiment, the conformal layer comprises a first layer of aluminum metal disposed on the upper surface of the body, the first layer being arranged between the upper body surface and a second layer of aluminum oxide.

[0021] In one embodiment, the conformal layer has a porosity of less than or equal to about 2%. In another embodiment, the conformal layer is formed by plasma spraying. In yet another embodiment, the body of the chamber component is formed of stainless steel, titanium, or aluminum.

[0022] In one embodiment, the plurality of underlying texture features on the upper surface of the chamber component body are disposed within the body using an electron beam.

[0023] In one embodiment, the plasma processing chamber includes a chamber housing containing plasma processing chamber components disposed within one or more embodiments disclosed herein.

[0024] Figure 1 This is a cross-sectional side view of a substrate processing chamber 10 (in this case, a PVD chamber). Chamber 10 includes a vacuum chamber body 12 sealed to a sputtering target 16 via a ceramic insulator 14. The target 16 has at least a first surface 15 facing a substrate 18 and a second surface 17 opposite the first surface 15. The first surface 15 of the target 16 is composed of a material to be sputtered onto the surface of the substrate 18, which is mounted on a substrate support 20 housed within the chamber body 12. The substrate 18 may be secured by a substrate clamp 22. Instead of the substrate clamp 22, a cover ring or electrostatic chuck may be incorporated into the substrate support 20 to secure the substrate 18. Examples of target materials include carbon, aluminum, copper, titanium, tantalum, cobalt, tungsten, nickel, molybdenum, alloys of these metals containing alloying elements, or other materials, metals, and / or metal alloys suitable for DC sputtering. However, it should be understood that other forms of sputtering can be used to deposit materials onto a substrate, such as RF sputtering and the like, as well as other forms of deposition, such as plasma-enhanced PVD (PE-PVD), CVD PE-CVD, ALD, PE-ALD and / or the like.

[0025] A grounding shield 24 is housed within the chamber body 12 to protect it from sputtered material. The shield 24 also provides a grounding anode. An RF power supply 28 can be coupled via an AC capacitive coupling circuit 30 to an electrode (not shown) embedded in the substrate support 20, allowing the substrate support 20 to generate a DC self-bias voltage in the presence of plasma. This negative DC self-bias voltage will attract the positively charged sputtered ions created in the high-density plasma to the high aspect ratio via characteristics of advanced integrated circuits.

[0026] A first gas source 34 supplies a working gas, such as argon, to the chamber body 12 via a mass flow controller 36. In some embodiments, a second gas source 38 or more gas sources may be used to supply one or more additional gases, such as nitrogen and / or reactive gases, to the chamber body 12. Gas can be introduced from various locations within the chamber body 12. For example, one or more inlet pipes located near the bottom of the chamber body 12 supply gas to the back of the shroud 24. The gas penetrates a perforation at the bottom of the shroud 24 or through a gap 42 formed between the substrate clamp 22 and the shroud 24. A vacuum pumping system 44 connected to the chamber body 12 via a wide pumping port maintains the internal volume of the chamber body 12 at a low pressure. A computer-based controller 48 controls components of the chamber 10, including an RF power supply 28 and mass flow controllers 36 and 40.

[0027] To provide efficient sputtering, a magnetron 50 is positioned above the target 16. The magnetron 50 may be housed within a magnetron cavity 64, defined by a coolant chamber 66 positioned above the target 16. The magnetron 50 includes a plurality of magnets 52, 54 to generate a magnetic field within the chamber body 12. These magnets 52, 54 may be coupled via a backplate 56. Each magnet 52 may be arranged with one pole facing the target 16, and each magnet 54 may be arranged with the other pole facing the target 16. For example, as... Figure 1 As shown, each magnet 52 is arranged with its south pole facing the target 16, and each magnet 54 is arranged with its north pole facing the target 16. Figure 1 As shown, magnets 52 and 54 can be arranged alternately along the longitudinal dimension (in the X-axis direction) of magnetron 50. In some embodiments, a pair of adjacent magnets 52, 54 can be replaced by a single U-shaped magnet, and magnetron 50 includes multiple U-shaped magnets. Magnetron 50 is coupled to shaft 62 driven by motor 65. Motor 65 may also be able to move magnetron 50 along the Z-axis and rotate about shaft 62.

[0028] To counteract the large amount of power delivered to the target 16, the back of the target 16 can be sealed to a coolant chamber 66, which encloses the magnetron cavity 64. The coolant chamber 66 may include a coolant 68, such as refrigerated deionized water, to cool the target 16 and / or the magnetron 50. The magnetron 50 is immersed in the coolant 68, and the shaft 62 passes through the coolant chamber 66 via a rotary seal 70.

[0029] Figure 2 This is a schematic cross-sectional side view of a chamber component 200 having a bottom body 202 with an upper body surface 204 comprising a plurality of bottom texture features 206 disposed therein. The bottom texture features 206 result in an upper body surface 204 having a first RMS surface roughness 208. In one embodiment, a conformal layer 210 is disposed over and directly on the upper body surface 204. In one embodiment, the conformal layer 210 comprises alumina, titanium oxide, or a combination thereof. The conformal layer 210 is highly conformal to the bottom texture features 206 such that the conformal layer 210 forms an upper component surface 212 having a second RMS surface roughness 214 greater than or equal to about 90% of the first RMS surface roughness. In one embodiment, the conformal layer 210 has a porosity 216 less than or equal to about 5%.

[0030] In one embodiment, the first RMS surface roughness 208 and / or the second RMS surface roughness 214 are each from about 150 micrometers to about 1500 micrometers. In another embodiment, the first RMS surface roughness 208 and / or the second RMS surface roughness 214 are each greater than or equal to about 200 micrometers, or greater than or equal to about 400 micrometers, or greater than or equal to about 500 micrometers, or greater than or equal to about 700 micrometers, or greater than or equal to about 900 micrometers, or greater than or equal to about 1000 micrometers, and less than or equal to about 1200 micrometers or less than or equal to about 1500 micrometers.

[0031] In one embodiment, the multiple underlying texture features 206 of the body 202 include multiple peaks 218 separated by valleys 220 (only one is labeled for clarity). In one embodiment, the valleys 220 have an average depth 222 ranging from about 150 micrometers to about 1500 micrometers (defined from the top of the peak 218). In one embodiment, the average depth 222 of the valleys 220 is greater than or equal to about 200 micrometers, or greater than or equal to about 400 micrometers, or greater than or equal to about 500 micrometers, or greater than or equal to about 700 micrometers, or greater than or equal to about 900 micrometers, or greater than or equal to about 1000 micrometers, and less than or equal to about 1200 micrometers or less than or equal to about 1500 micrometers. In one embodiment, the average peak-to-peak separation distance 224 and the average peak width 228 range from about 100 micrometers to 1500 micrometers.

[0032] In one embodiment, the conformal layer 210 has an average thickness 226 ranging from about 40 micrometers to 500 micrometers. In another embodiment, the average thickness 226 is greater than or equal to about 50 micrometers, or greater than or equal to about 85 micrometers, or greater than or equal to about 100 micrometers, or greater than or equal to about 200 micrometers, or greater than or equal to about 300 micrometers, and less than or equal to about 400 micrometers or less than or equal to about 500 micrometers. In yet another embodiment, the conformal layer 210 has a uniform thickness of + / - 10%, + / - 7%, or + / - 5% of the average thickness 226.

[0033] In an embodiment, the conformal layer 210 has a porosity 216 of less than or equal to about 2%, or less than or equal to about 1%, or less than or equal to about 0.5%, that is, pores or discontinuities disposed in the layer.

[0034] In one embodiment, the conformal layer comprises a material selected to have a linear temperature expansion coefficient ranging from about 45% to 110% of the linear temperature expansion coefficient of the material forming the host. In another embodiment, the conformal layer comprises a material selected to have a linear temperature expansion coefficient greater than or equal to about 50%, or greater than or equal to about 70%, or greater than or equal to about 90%, or substantially equal to, the linear temperature expansion coefficient of the material forming the host, and less than or equal to about 105% or less than or equal to about 110% of the linear temperature expansion coefficient of the material forming the host.

[0035] In one embodiment, the conforming layer 210 comprises aluminum oxide, or is substantially composed of aluminum oxide, or is composed of aluminum oxide. In another embodiment, the conforming layer 210 comprises titanium oxide, or is substantially composed of titanium oxide, or is composed of titanium oxide.

[0036] Figure 3A cross-section of a plasma processing chamber component 300 with an alternative conformal layer 302 is depicted, the alternative conformal layer 302 comprising a first layer 304 of aluminum metal disposed between an upper body surface 204 and a second layer 306 of aluminum oxide.

[0037] In one embodiment, the body 202 is formed of stainless steel (e.g., stainless steel, austenitic steel, and the like), titanium or an alloy containing titanium, and / or aluminum or an alloy containing aluminum. In another embodiment, the conformal layer is formed by plasma spraying.

[0038] In one embodiment, the plurality of underlying texture features 206 may be formed by any suitable method, such as sandblasting. In another embodiment, the plurality of underlying texture features 206 are formed using an electron beam. In yet another embodiment, the underlying texture features are formed by moving an electromagnetic beam to a first region of the surface, scanning the electromagnetic beam across the first region of the surface to heat the surface, and scanning the electromagnetic beam across the heated surface of the first region to form underlying texture features including peaks, valleys, indentations, protrusions, and combinations thereof. (See, for example, US20100108641A1, US20210183657A1, and US11251024B2, the disclosures of which are incorporated herein by reference in their entirety).

[0039] Exemplary Implementation

[0040] The implementation methods of this application include, but are not limited to:

[0041] E1. A plasma processing chamber component comprising: a body having an upper body surface including a plurality of underlying texture features disposed therein and having a first root mean square (RMS) surface roughness; and a conformal layer disposed on the upper body surface to form an upper component surface having a second RMS surface roughness, wherein the second RMS surface roughness is greater than or equal to about 90% of the first RMS surface roughness.

[0042] E2. The plasma processing chamber component according to embodiment E1, wherein the conformal layer disposed above the upper body surface comprises aluminum oxide, titanium oxide, tungsten oxide, or a combination thereof.

[0043] E3. The plasma processing chamber component according to any one of embodiments E1 to E2, wherein the first RMS surface roughness and the second RMS surface roughness are about 150 micrometers to about 1500 micrometers, respectively.

[0044] E4. A plasma processing chamber component according to any one of embodiments E1 to E3, wherein the plurality of underlying texture features of the body comprises a plurality of peaks separated by valleys, the valleys having an average depth of about 150 micrometers to 1500 micrometers and an average peak-to-peak separation distance of about 100 micrometers to 1500 micrometers.

[0045] E5. The plasma processing chamber component according to any one of embodiments E1 to E4, wherein the conformal layer has an average thickness of about 40 micrometers to 500 micrometers and a uniform thickness of + / - 10% of the average thickness.

[0046] E6. The plasma processing chamber component according to any one of embodiments E1 to E5, wherein the linear temperature expansion coefficient of the positive shape layer is about 45% to 110% of the linear temperature expansion coefficient of the main body.

[0047] E7. A plasma processing chamber component according to any one of embodiments E1 to E6, wherein the positive shape layer is substantially composed of aluminum oxide.

[0048] E8. A plasma processing chamber component according to any one of embodiments E1 to E7, wherein the positive shape layer is substantially composed of titanium oxide.

[0049] E9. A plasma processing chamber component according to any one of embodiments E1 to E8, wherein the positive shape layer is substantially composed of aluminum oxide.

[0050] E10. A plasma processing chamber component according to any one of embodiments E1 to E9, wherein the positive shape layer comprises a first layer of aluminum metal disposed between the upper body surface and a second layer of aluminum oxide.

[0051] E11. A plasma processing chamber component according to any one of embodiments E1 to E10, wherein the positive shape layer has a porosity of less than or equal to about 5%.

[0052] E12. The plasma processing chamber component according to any one of embodiments E1 to E11, wherein the positive shape layer is formed by plasma spraying.

[0053] E13. A plasma processing chamber component according to any one of embodiments E1 to E12, wherein the plurality of underlying texture features are disposed in the body using an electron beam.

[0054] E14. A plasma processing chamber, comprising:

[0055] The outer shell of the chamber; and

[0056] A plasma processing chamber component, which is housed within a chamber housing;

[0057] The plasma processing chamber component includes:

[0058] A body having an upper body surface comprising a plurality of underlying texture features disposed therein and having a first RMS surface roughness; and

[0059] A conformal layer, disposed on the upper body surface, comprising aluminum oxide, titanium oxide, tungsten oxide or a combination thereof, forming an upper component surface having a second RMS surface roughness and a porosity of less than or equal to about 5%, wherein the second RMS surface roughness is greater than or equal to about 90% of the first RMS surface roughness.

[0060] E15. The plasma processing chamber component according to embodiment E14, wherein the underlying texture features of the body include multiple peaks separated by valleys, the valleys having an average depth of about 150 micrometers to 1500 micrometers, and an average peak-to-peak separation distance of about 100 micrometers to 500 micrometers.

[0061] E16. The plasma processing chamber component according to any one of embodiments E14 to E15, wherein the conformal layer has an average thickness of about 40 micrometers to 500 micrometers and a uniform thickness of + / - 10% of the average thickness.

[0062] E17. The plasma processing chamber component according to any one of embodiments E14 to E16, wherein the linear temperature expansion coefficient of the conformal layer is about 45% to 110% of the linear temperature expansion coefficient of the main body.

[0063] E18. A plasma processing chamber component according to any one of embodiments E14 to E17, wherein the positive shape layer is substantially composed of aluminum oxide.

[0064] E19. A plasma processing chamber component according to any one of embodiments E14 to E17, wherein the positive shape layer is substantially composed of titanium oxide.

[0065] E20. A plasma processing chamber component according to any one of embodiments E14 to E17, wherein the positive shape layer is substantially composed of tungsten oxide.

[0066] E21. The plasma processing chamber component according to any one of embodiments E14 to E20, wherein the positive shape layer has a porosity of less than or equal to about 2%.

[0067] E22. A plasma processing chamber component according to any one of embodiments E14 to E21, wherein the plasma processing chamber is a shroud, a clamp, or a substrate support.

[0068] E23. A plasma processing chamber component comprising:

[0069] A body having an upper body surface comprising multiple underlying texture features disposed within the body using an electron beam, the multiple underlying texture features comprising multiple peaks separated by valleys, the valleys having an average depth of approximately 150 micrometers to 1500 micrometers, and an average peak-to-peak separation distance of approximately 100 micrometers to 500 micrometers, such that the upper body surface has a first RMS surface roughness; and

[0070] A conformal layer, disposed on the surface of the upper body, comprising aluminum oxide, titanium oxide, or a combination thereof, forming the surface of the upper component, wherein the conformal layer has an average thickness of about 40 micrometers to 500 micrometers, a uniform thickness of + / - 10% of the average thickness, and a porosity of less than or equal to about 2%, such that the surface of the upper component has a second RMS surface roughness that is greater than or equal to about 90% of the first RMS surface roughness.

[0071] Although the foregoing describes an implementation of this disclosure, other and additional implementations of this disclosure may be designed without departing from its basic scope.

Claims

1. A plasma processing chamber component, the plasma processing chamber component comprising: A body having an upper body surface comprising a plurality of underlying texture features disposed therein, and having a first root mean square (RMS) surface roughness of approximately 150 micrometers to approximately 1500 micrometers; and A conformal layer is disposed on the upper body surface to form an upper component surface, the upper component surface having a second RMS surface roughness, wherein the second RMS surface roughness is greater than or equal to about 90% of the first RMS surface roughness.

2. The plasma processing chamber component of claim 1, wherein the conformal layer disposed above the upper body surface comprises alumina, titanium oxide, tungsten oxide, or a combination thereof.

3. The plasma processing chamber component as claimed in claim 1, wherein the first RMS surface roughness and the second RMS surface roughness are approximately 180 micrometers to approximately 1000 micrometers, respectively.

4. The plasma processing chamber component of claim 1, wherein the plurality of underlying texture features of the body comprises a plurality of peaks separated by valleys, the valleys having an average depth of about 150 micrometers to 1500 micrometers, and an average peak-to-peak separation distance of about 100 micrometers to 1500 micrometers.

5. The plasma processing chamber component of claim 1, wherein the conformal layer has an average thickness of about 40 micrometers to 500 micrometers and a uniform thickness of + / - 10% of the average thickness.

6. The plasma processing chamber component of claim 1, wherein the linear temperature expansion coefficient of the conformal layer is about 45% to 110% of the linear temperature expansion coefficient of the body.

7. The plasma processing chamber component of claim 1, wherein the conformal layer is substantially composed of aluminum oxide.

8. The plasma processing chamber component of claim 1, wherein the conformal layer is substantially composed of titanium oxide.

9. The plasma processing chamber component of claim 1, wherein the conformal layer comprises a first layer of aluminum metal disposed between the upper body surface and the second layer of alumina.

10. The plasma processing chamber component of claim 1, wherein the conformal layer has a porosity of less than or equal to about 5%.

11. The plasma processing chamber component of claim 1, wherein the conformal layer is formed by plasma spraying.

12. The plasma processing chamber component of claim 1, wherein the plurality of underlying texture features are disposed within the body using an electron beam.

13. A plasma processing chamber, the plasma processing chamber comprising: The outer shell of the chamber; and A plasma processing chamber component, wherein the plasma processing chamber component is disposed within the chamber housing; The plasma processing chamber component includes: A body having an upper body surface comprising a plurality of underlying texture features disposed therein, and having a first RMS surface roughness ranging from about 150 micrometers to about 1500 micrometers; and A conformal layer, disposed on the upper body surface, comprising aluminum oxide, titanium oxide, tungsten oxide or a combination thereof, forming an upper component surface, the upper component surface having a second RMS surface roughness and a porosity of less than or equal to about 5%, wherein the second RMS surface roughness is greater than or equal to about 90% of the first RMS surface roughness.

14. The plasma processing chamber of claim 13, wherein the plurality of underlying texture features of the body comprises a plurality of peaks separated by valleys, the valleys having an average depth of about 150 micrometers to 1500 micrometers and an average peak-to-peak separation distance of about 100 micrometers to 500 micrometers.

15. The plasma processing chamber of claim 13, wherein the conformal layer has an average thickness of about 40 micrometers to 500 micrometers and a uniform thickness of + / - 10% of the average thickness.

16. The plasma processing chamber of claim 13, wherein the linear temperature expansion coefficient of the conformal layer is about 45% to 110% of the linear temperature expansion coefficient of the body.

17. The plasma processing chamber of claim 13, wherein the conformal layer is substantially composed of alumina.

18. The plasma processing chamber of claim 13, wherein the conformal layer has a porosity of less than or equal to about 2%.

19. The plasma processing chamber of claim 13, wherein the plasma processing chamber component is a shroud, a clamp, or a substrate support.

20. A plasma processing chamber component, the plasma processing chamber component comprising: A body having an upper body surface, the upper body surface comprising a plurality of underlying texture features disposed therein using an electron beam, the plurality of underlying texture features comprising a plurality of peaks separated by valleys, the valleys having an average depth of approximately 150 micrometers to 1500 micrometers, and an average peak-to-peak separation distance of approximately 100 micrometers to 500 micrometers, such that the upper body surface has a first RMS surface roughness; and A conformal layer, disposed on the upper body surface, comprising aluminum oxide, titanium oxide, or a combination thereof, forming the upper component surface, wherein the conformal layer has an average thickness of about 40 micrometers to 500 micrometers, a uniform thickness of + / - 10% of the average thickness, and a porosity of less than or equal to about 2%, such that the upper component surface has a second RMS surface roughness greater than or equal to about 90% of the first RMS surface roughness.

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