Through-electrode substrate and method for manufacturing through-electrode substrate

Abstract

A through electrode substrate includes a substrate including a first surface, a second surface located on an opposite side of the first surface, and a plurality of through holes that pass through from the first surface to the second surface, and a plurality of through electrodes that reach the second surface from the first surface through the through holes. The plurality of through electrodes each includes a plurality of internal portions located inside the plurality of through holes, a first portion located on the first surface and connected to the plurality of internal portions, and a second portion located on the second surface and connected to the plurality of internal portions. The first portions of the plurality of through electrodes each have an outline that surrounds the plurality of through holes in a plan view.

Description

Technical Field

[0001] Embodiments of this disclosure relate to a through-electrode substrate and a method for manufacturing the through-electrode substrate. Background Technology

[0002] Through-electrode substrates are used in various applications. A through-electrode substrate is a component comprising a substrate including a first surface and a second surface, a through-hole formed in the substrate, and a through-electrode located in the through-hole. Through-electrode substrates are used, for example, as interposers. An interposer is a component that lies between two electrical components. For example, a through-electrode substrate may lie between two LSI chips in the thickness direction. Through-electrode substrates are sometimes also used between components such as LSI chips and mounting substrates such as motherboards. Through-electrode substrates are also used as components constituting passive components such as inductors and capacitors.

[0003] For example, as disclosed in Patent Document 1, the through electrode of the through electrode substrate has various structures. A first example of a through electrode is one where the entire through hole is filled with a conductive material such as copper. A second example is one where a layer of conductive material such as copper is formed on the wall surface of the through hole. A third example is one where a layer of conductive material such as copper is formed on the wall surface of the through hole, and a layer of conductive material is formed that closes the through hole along a first or second surface of the substrate. In the second and third examples, the space in the through hole where no conductive material exists is filled with a resin material.

[0004] Prior art literature

[0005] Patent documents

[0006] Patent Document 1: International Publication No. 2022 / 173057 Summary of the Invention

[0007] -The problem the invention aims to solve-

[0008] The aim is to increase the maximum value of the current flowing through the through-electrode (hereinafter also referred to as the allowable current). In the first example of the through-electrode, the larger the size of the through-hole in the planar direction, the higher the allowable current of the through-electrode. However, the larger the size of the through-hole, the more likely it is to generate defects such as pores in the conductive material filling the through-hole. In the second and third examples of the through-electrode, the larger the size of the through-hole in the planar direction, the higher the allowable current of the through-electrode. The larger the size of the through-hole, the more likely it is to generate defects such as pores in the resin material filling the through-hole.

[0009] The purpose of this disclosure is to provide a through electrode substrate and a method for manufacturing the through electrode substrate that can effectively solve such problems.

[0010] -Methods for solving problems-

[0011] The embodiments of this disclosure relate to the following [1] to

[23] .

[0012] [1] A through-electrode substrate, comprising:

[0013] A substrate includes a first surface, a second surface located opposite the first surface, and a plurality of through holes extending from the first surface to the second surface; and

[0014] Multiple through electrodes extend from the first surface through the through holes to the second surface.

[0015] Each of the plurality of through electrodes comprises: a plurality of internal portions located inside the plurality of through holes; a first portion located on the first surface and connected to the plurality of internal portions; and a second portion located on the second surface and connected to the plurality of internal portions.

[0016] The first portion of each of the plurality of through electrodes has a contour that surrounds the plurality of through holes when viewed from above.

[0017] [2] In the through electrode substrate described in [1], the plurality of through holes may each have: a wall surface, including a first end connected to the first surface, a second end connected to the second surface, and a minimum portion located between the first end and the second end. Alternatively, the through hole in the minimum portion may have the minimum value of the through hole size in the surface direction of the first surface, i.e., the minimum size. Alternatively, the plurality of internal portions may each include: a closing portion that closes the through hole at least in the minimum portion, a third portion located on the wall surface between the first portion and the closing portion, and a fourth portion located on the wall surface between the second portion and the closing portion.

[0018] [3] In the through electrode substrate described in [2], the closed portion may include a first closed surface and a second closed surface. Alternatively, the first closed surface may be the surface of the closed portion facing the first surface. Alternatively, the second closed surface may be the surface of the closed portion facing the second surface. Alternatively, the through electrode may have: a first distance, which is the maximum value of the distance from the first surface to the first closed surface in the thickness direction of the substrate, and a second distance, which is the maximum value of the distance from the second surface to the second closed surface in the thickness direction of the substrate. Alternatively, the ratio of the first distance to the thickness of the substrate may be 0.10 or more. Alternatively, the ratio of the second distance to the thickness of the substrate may be 0.10 or more.

[0019] [4] In the through electrode substrate described in [2] or [3], it may also include: a plurality of internal resins located inside each of the plurality of through holes, or the plurality of internal resins may respectively include: a first internal resin located inside the third part and a second internal resin located inside the fourth part.

[0020] [5] In the through electrode substrate described in [1], the plurality of through holes may each have a wall surface, including a first end connected to the first surface and a second end connected to the second surface. Alternatively, the plurality of internal portions may each extend from the first end to the second end and be located on the wall surface. Alternatively, the through electrode substrate may have a plurality of internal resins located inside the internal portions of the through electrodes within each of the plurality of through holes.

[0021] [6] In the through electrode substrate described in [5], the plurality of through holes may each include a minimum portion located between the first end and the second end, or the minimum size of the through hole in the direction of the surface where the first surface of the minimum portion is located may be the minimum value of the through hole size.

[0022] [7] In any of the through electrode substrates described in [4] to [6], the first portion of the plurality of through electrodes may respectively include a plurality of openings where the internal resin is located.

[0023] [8] In the through electrode substrate described in [1], the ratio of the thickness of the internal portion to the thickness of the substrate may be 0.80 or more and 1.20 or less.

[0024] [9] In any one of [1] to [8], the through electrode substrate may also include: a plurality of first conductive layers, each connected to the first portion of the plurality of through electrodes; and a first resin layer located in the thickness direction of the substrate between the first portion of the plurality of through electrodes and the plurality of first conductive layers.

[0025]

[10] In the through electrode substrate described in [9], the plurality of the first conductive layers may each have an outline that surrounds the plurality of through holes when viewed from above.

[0026]

[11] In the through electrode substrate described in

[10] , it may also include: a plurality of third conductive layers connected to one of the first conductive layers; and a third resin layer located between one of the first conductive layers and the plurality of third conductive layers in the thickness direction of the substrate.

[0027]

[12] In the through electrode substrate described in

[10] or

[11] , the plurality of through electrodes may include: a first through electrode and a second through electrode adjacent to the first through electrode when viewed from above. Alternatively, the first conductive layer connected to the first through electrode may extend outward beyond the outline of the first portion of the first through electrode. Alternatively, the first portion of the second through electrode may extend outward beyond the outline of the first conductive layer connected to the second through electrode. Alternatively, in the thickness direction of the substrate, a portion of the first conductive layer connected to the first through electrode and a portion of the first portion of the second through electrode may face each other.

[0028]

[13] In any of the through electrode substrates in [9] to

[12] , the first resin layer may include an opening with a fourth size when viewed from above, where a portion of the first conductive layer is located; the through hole may have a first size on the first surface; or the fourth size may be larger than the first size.

[0029]

[14] A through-electrode substrate, comprising:

[0030] The substrate includes a first surface, a second surface located on the opposite side of the first surface, and a plurality of through holes extending from the first surface to the second surface;

[0031] Multiple through electrodes extend from the first surface through the through holes to the second surface; and

[0032] The first wiring layer, located on the first surface, includes at least one insulating layer and at least one conductive layer.

[0033] The plurality of through electrodes each comprises a plurality of internal portions located inside the plurality of through holes.

[0034] The ratio of the thickness of the internal portion to the thickness of the substrate is 0.80 or more and 1.20 or less.

[0035] The at least one insulating layer includes a first resin layer located on the first surface.

[0036] The first resin layer includes multiple openings, each of which overlaps with the interior portion when viewed from above.

[0037] When viewed from above, the first resin layer overlaps with the boundary between the wall of the through hole and the internal portion.

[0038] The at least one conductive layer comprises: a conductive layer electrically connected to the plurality of the internal portions.

[0039]

[15] In the through electrode substrate described in

[14] , the at least one conductive layer may include a first conductive layer that connects the plurality of openings in the first resin layer to the plurality of internal portions, or the first conductive layer may be the conductive layer that is electrically connected to the plurality of internal portions.

[0040]

[16] In the through electrode substrate described in

[14] , the at least one conductive layer may include: a plurality of first conductive layers respectively connected to the internal portion of the plurality of openings in the first resin layer; and the conductive layer electrically connected to the plurality of first conductive layers.

[0041]

[17] In any of the through electrode substrates described in [1] to

[16] , the plurality of through electrodes may be arranged at a first spacing in the surface direction of the first surface, or the plurality of through holes in the plurality of internal portions contained in one through electrode may be arranged at a second spacing in the surface direction of the first surface, or the ratio of the first spacing to the second spacing may be 2.0 or more.

[0042]

[18] In the through electrode substrate described in

[17] , the ratio of the first spacing to the second spacing may be 5.0 or less.

[0043]

[19] In the through electrode substrate described in

[17] or

[18] , the through hole may have a first dimension on the first surface, or the ratio of the second spacing to the first dimension may be 1.5 or more.

[0044]

[20] In the through electrode substrate described in

[19] , the first dimension may be 50 μm or more and 100 μm or less.

[0045]

[21] A mounting substrate comprising:

[0046] The through-electrode substrate as described in any one of [1] to

[20] ; and

[0047] The element is electrically connected to a plurality of the through electrodes of the through electrode substrate.

[0048]

[22] A method for manufacturing a through-electrode substrate, comprising:

[0049] A process for preparing a substrate comprising a first surface, a second surface located opposite the first surface, and a through hole extending from the first surface to the second surface; and

[0050] A through-electrode forming process is performed to form a plurality of through electrodes extending from the first surface through the through-hole to the second surface.

[0051] Each of the plurality of through electrodes comprises: a plurality of internal portions located inside the plurality of through holes; a first portion located on the first surface and connected to the plurality of internal portions; and a second portion located on the second surface and connected to the plurality of internal portions.

[0052] The first portion of each of the plurality of through electrodes has a contour that surrounds the plurality of through holes when viewed from above.

[0053]

[23] A method for manufacturing a through-electrode substrate, comprising:

[0054] A process for preparing a substrate comprising a first surface, a second surface located on the opposite side of the first surface, and a through hole extending from the first surface to the second surface;

[0055] A through-electrode forming process for forming a plurality of through electrodes extending from the first surface through the through-hole to the second surface; and

[0056] The process of forming a first wiring layer located on the first surface, comprising at least one insulating layer and at least one conductive layer.

[0057] Each of the plurality of through electrodes comprises a plurality of internal portions located inside the plurality of through holes.

[0058] The multiple internal portions are filled with through holes,

[0059] The at least one insulating layer includes a first resin layer located on the first surface.

[0060] The first resin layer includes multiple openings, each of which overlaps with the interior portion when viewed from above.

[0061] When viewed from above, the first resin layer overlaps with the boundary between the wall of the through hole and the internal portion.

[0062] The at least one conductive layer comprises a conductive layer electrically connected to the plurality of the internal portions.

[0063] -Invention Effects-

[0064] According to embodiments of this disclosure, defects such as pores can be suppressed while increasing the allowable current of the through electrode. Attached Figure Description

[0065] Figure 1 This is a top view showing a through electrode substrate according to one embodiment.

[0066] Figure 2 It means Figure 1 A top view of a portion of the through-electrode substrate.

[0067] Figure 3 yes Figure 2 A cross-sectional view of the through electrode substrate along line III-III.

[0068] Figure 4 This is a cross-sectional view showing an example of a through electrode in a through electrode substrate.

[0069] Figure 5 This is a cross-sectional view showing an example of a through-hole in a substrate.

[0070] Figure 6 This is a cross-sectional view showing an example of a through-electrode.

[0071] Figure 7 This is a cross-sectional view showing an example of the dimensions of a through electrode.

[0072] Figure 8 This is a cross-sectional view illustrating an example of the process of preparing a substrate.

[0073] Figure 9 This is a cross-sectional view illustrating an example of the seed crystal layer formation process.

[0074] Figure 10 This is a cross-sectional view illustrating an example of the coating formation process.

[0075] Figure 11 This is a cross-sectional view illustrating an example of the coating formation process.

[0076] Figure 12 This is a cross-sectional view illustrating an example of the coating formation process.

[0077] Figure 13 This is a cross-sectional view illustrating an example of the process of removing a portion of the seed crystal layer.

[0078] Figure 14 This is a cross-sectional view illustrating an example of the resin layer formation process.

[0079] Figure 15 This is a cross-sectional view showing a modified example of a through electrode in a through electrode substrate.

[0080] Figure 16 This is a cross-sectional view showing a modified example of a through electrode in a through electrode substrate.

[0081] Figure 17 This is a cross-sectional view showing a modified example of a through electrode in a through electrode substrate.

[0082] Figure 18 This is a cross-sectional view showing a modified example of a through electrode in a through electrode substrate.

[0083] Figure 19 This is a top view showing a modified example of a through-electrode substrate.

[0084] Figure 20 yes Figure 19 A cross-sectional view of the through electrode substrate along line XX-XX.

[0085] Figure 21 yes Figure 19 Cross-sectional view of the XXI-XXI line of the through electrode substrate.

[0086] Figure 22 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0087] Figure 23 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0088] Figure 24 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0089] Figure 25 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0090] Figure 26 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0091] Figure 27 This is a top view showing a modified example of a through-electrode substrate.

[0092] Figure 28 This is a diagram showing an example of a product equipped with a through-electrode substrate.

[0093] Figure 29 This is a table showing the evaluation results of Examples 1 to 5.

[0094] Figure 30 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0095] Figure 31 This is a top view showing a modified example of a through-electrode substrate.

[0096] Figure 32 yes Figure 31 A cross-sectional view of the through electrode substrate along line XXXII-XXXII.

[0097] Figure 33 This is a top view showing a modified example of a through-electrode substrate.

[0098] Figure 34 yes Figure 33 A cross-sectional view of the through electrode substrate along line XXXIV-XXXIV.

[0099] Figure 35 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0100] Figure 36 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0101] Figure 37 This is a cross-sectional view showing a modified example of a through-electrode substrate.

[0102] Figure 38 This is a cross-sectional view showing a modified example of a through-electrode substrate. Detailed Implementation

[0103] The structure of the through-electrode substrate and its manufacturing method will be described in detail with reference to the accompanying drawings. The embodiments shown below are examples of embodiments of this disclosure, and this disclosure is neither limited to these embodiments nor omitted. In this specification, the terms "substrate," "material substrate," "sheet," and "film" are not distinguished from each other solely based on differences in terminology. For example, "substrate" also includes the concept of components that can be called sheets or films. The term "surface" refers to a surface whose plane direction coincides with that of the plate-like component when viewed as a whole and in a general sense. The term "normal direction" used for the plate-like component refers to the normal direction relative to the surface of the component. Terms such as "parallel" and "orthogonal," and values ​​of length and angle used in this specification to define shape, geometry, and their degree are not strictly defined and are interpreted within a range of degrees to which the same function can be expected.

[0104] In this specification, when multiple upper limit values ​​and multiple lower limit values ​​are given for a certain parameter, the numerical range of the parameter can be constructed by combining any one candidate upper limit value and any one candidate lower limit value. For example, consider the case described as "Parameter B is, for example, above A1, or above A2, or above A3. Parameter B is, for example, below A4, or below A5, or below A6." In this case, the numerical range of parameter B can be above A1 and below A4, above A1 and below A5, above A1 and below A6, above A2 and below A4, above A2 and below A5, above A2 and below A6, above A3 and below A4, above A3 and below A5, or above A3 and below A6.

[0105] In the accompanying drawings referenced in this embodiment, parts having the same characteristics or the same function are labeled with the same or similar reference numerals, and sometimes repeated descriptions are omitted. Furthermore, the dimensional ratios in the drawings sometimes differ from the actual ratios for ease of explanation, and some parts of the structure are omitted from the drawings.

[0106] The embodiments of this disclosure will be described. Figure 1 This is a top view showing an example of a through electrode substrate 10. Figure 2 It means Figure 1 A top view of a portion of the through electrode substrate 10. Figure 3 yes Figure 2 A cross-sectional view of the through electrode substrate 10 along line III-III.

[0107] The through-electrode substrate 10 includes a substrate 12 and a plurality of through electrodes 20. The substrate 12 includes a first surface 13 and a second surface 14 located on the opposite side of the first surface 13 in the thickness direction of the substrate 12. The thickness direction is also referred to as the third direction D3. The substrate 12 also includes a plurality of through holes 15 extending from the first surface 13 to the second surface 14. The plurality of through electrodes 20 respectively reach the second surface 14 from the first surface 13 through the through holes 15.

[0108] like Figure 1 As shown, the plurality of through electrodes 20 can be arranged along the surface direction of the first surface 13. For example, the plurality of through electrodes 20 can be arranged in a first direction D1. The first direction D1 is one of the surface directions of the first surface 13. For example, the plurality of through electrodes 20 can also be arranged in a second direction D2, which is different from the first direction D1. The second direction D2 is also one of the surface directions of the first surface 13. The second direction D2 can be orthogonal to the first direction D1.

[0109] Multiple through electrodes 20 can be arranged at a first spacing P1 along the surface direction of the first surface 13. For example, multiple through electrodes 20 can be arranged at a first spacing P1 along both the first direction D1 and the second direction D2. The first spacing P1 is the distance between the center points C1 of two adjacent through electrodes 20 when viewed from above. "Viewed from above" refers to observing the object along the normal direction of the first surface 13.

[0110] The first spacing P1 can be 200 μm or more, or 400 μm or more, or 600 μm or more. The first spacing P1 can be 3000 μm or less, or 2000 μm or less, or 1000 μm or less.

[0111] The first spacing P1 can vary depending on its position in the first direction D1 or its position in the second direction D2. When multiple values ​​of the first spacing P1 are measured, the minimum value among the multiple first spacings P1 is used to determine whether the first spacing P1 meets the numerical range described in this specification.

[0112] The substrate 12 and the through electrode 20 will be described in detail.

[0113] (Substrate)

[0114] The substrate 12 comprises an inorganic material with insulating properties. For example, the substrate 12 is a glass substrate, a quartz substrate, a sapphire substrate, a resin substrate, a silicon substrate, a silicon carbide substrate, an alumina (Al2O3) substrate, an aluminum nitride (AlN) substrate, a zirconium oxide (ZrO2) substrate, or a structure in which these substrates are stacked. The substrate 12 may also partially comprise a substrate containing a conductive material such as an aluminum substrate or a stainless steel substrate.

[0115] Examples of glass used in substrate 12 include alkali-free glass. Alkali-free glass is glass that does not contain alkali components such as sodium or potassium. For example, alkali-free glass may contain boric acid instead of alkali components. In addition, alkali-free glass may contain alkaline earth metal oxides such as calcium oxide or barium oxide.

[0116] The thickness T0 of the substrate 12 is, for example, 100 μm or more, or 200 μm or more, or 300 μm or more. The thickness T0 of the substrate 12 is, for example, 800 μm or less, or 600 μm or less, or 400 μm or less.

[0117] like Figure 2 as well as Figure 3 As shown, the through hole 15 includes a wall 16 extending from the first surface 13 to the second surface 14. The wall 16 includes a first end 161 and a second end 162. The first end 161 is the portion of the wall 16 connected to the first surface 13. The second end 162 is the portion of the wall 16 connected to the second surface 14. The first end 161 and the second end 162 may have a circular outline when viewed from above.

[0118] (Through electrode)

[0119] Figure 4 This is a cross-sectional view showing an example of the through electrode 20. For example... Figures 2-4 As shown, the plurality of through electrodes 20 each include a first portion 21, a second portion 22, and a plurality of internal portions 26. The internal portions 26 are conductive materials that constitute the through electrodes 20 and are located inside the through holes 15. The plurality of internal portions 26 are located inside the corresponding through holes 15. In other words, one internal portion 26 is located inside one corresponding through hole 15. Therefore, the plurality of through electrodes 20 each include a first portion 21, a second portion 22, and a plurality of internal portions 26 located inside the plurality of through holes 15. In this embodiment, the plurality of through electrodes 20 each include a first portion 21, a second portion 22, and four internal portions 26 located inside four through holes 15.

[0120] A through electrode 20 comprising multiple internal portions 26 located within multiple through holes 15 is also called a multi-hole structure.

[0121] The number of through holes 15 overlapping one of the first part 21 when viewed from above is, for example, two or more, or four or more. The number of through holes 15 overlapping one of the first part 21 when viewed from above is, for example, 16 or less, or 12 or less, or 9 or less, or 8 or less, or 6 or less.

[0122] Each through electrode 20 has multiple internal portions 26 connected to a first portion 21 on the first surface 13 and to a second portion 22 on the second surface 14. The first portion 21 is located on the first surface 13. The second portion 22 is located on the second surface 14.

[0123] Part 1, 21, has an outline 211. Outline 211 is the outer edge of Part 1, 21, when viewed from above. For example... Figure 2 As shown, the contour 211 of the first portion 21 of the plurality of through electrodes 20 can respectively surround the first end 161 of the wall 16 of the plurality of through holes 15 when viewed from above. In the entire region of the contour 211, the distance from the center point C1 to the contour 211 when viewed from above can be greater than the distance from the center point C1 to the first end 161 when viewed from above.

[0124] The plurality of through holes 15 located in the plurality of internal portions 26 contained in a single through electrode 20 can be arranged at a second spacing P2 in the surface direction of the first surface 13. For example, the plurality of through holes 15 can be arranged at a second spacing P2 in both the first direction D1 and the second direction D2. The second spacing P2 is the distance between the center points C2 of two adjacent through holes 15 when viewed from above. In this embodiment, the plurality of through holes 15 located in the plurality of internal portions 26 contained in a single through electrode 20 are surrounded by the outline of a first portion 21 when viewed from above.

[0125] The second spacing P2 can be, for example, 80 μm or more, or 100 μm or more, or 125 μm or more, or 150 μm or more, or 175 μm or more, or 200 μm or more, or 300 μm or more, or 350 μm or more. The second spacing P2 can be, for example, less than 1000 μm, or less than 700 μm, or less than 500 μm. The smaller the second spacing P2, the higher the distribution density of the through-holes 15, and therefore the higher the allowable current of the through-electrode 20. The larger the second spacing P2, the easier it is to alleviate the stress generated in the internal portion 26, and therefore the higher the reliability of the through-electrode substrate 10.

[0126] The second spacing P2 is smaller than the first spacing P1. The ratio of the first spacing P1 to the second spacing P2, i.e., P1 / P2, is, for example, greater than 2.0, greater than 2.5, or greater than 3.0. P1 / P2 is, for example, less than 5.0, less than 4.5, or less than 4.0.

[0127] exist Figure 2 In the attached figure, reference numeral P3 indicates the shortest distance between the through holes 15 of two adjacent through electrodes 20. The two adjacent through electrodes 20 are also referred to as the first through electrode 20A and the second through electrode 20B. The shortest distance P3 is measured between the center point C2 of the through hole 15 of the first through electrode 20A and the center point C2 of the through hole 15 of the second through electrode 20B.

[0128] The smaller the difference between the second spacing P2 and the shortest distance P3, the more uniform the distribution density of the through holes 15 in the substrate 12. Higher uniformity of the through hole distribution density better suppresses stress deviations in the substrate 12 due to position. The ratio of the shortest distance P3 to the second spacing P2, i.e., P3 / P2, is, for example, 0.90 or more, or 0.95 or more, or 1.00 or more. P3 / P2 is, for example, 2.00 or less, or 1.50 or less, or 1.20 or less.

[0129] Part 22 has a profile 221. Profile 221 is the outer edge of part 22 when viewed from above. Although not shown, the profile 221 of the second part 22 of the plurality of through electrodes 20 may, when viewed from above, surround the second end 162 of the wall 16 of the plurality of through holes 15. In the entire region of profile 221, the distance from the center point C1 when viewed from above to profile 221 may be greater than the distance from the center point C1 when viewed from above to the second end 162.

[0130] The through-electrode substrate 10 may have multiple internal resins 30. The internal resins 30 are resin materials located inside the through-holes 15. For example... Figure 3 As shown, the portion of the space inside the through hole 15 that does not have an internal portion 26 can be fitted with an internal resin 30.

[0131] like Figures 2-4 As shown, the first portion 21 of the plurality of through electrodes 20 may each contain a plurality of openings 212 that overlap with the through hole 15 when viewed from above. One opening 212 may overlap with one through hole 15. The internal resin 30 may be located in each of the plurality of openings 212. By forming a plurality of openings 212 in the first portion 21, the stress generated in the through electrodes 20 is easily mitigated.

[0132] The second portion 22 of the plurality of through electrodes 20 may also be comprised of a plurality of openings 222 that overlap with the through hole 15 when viewed from above. One opening 222 may overlap with one through hole 15. The internal resin 30 may be located in each of the plurality of openings 222.

[0133] The structure of the through hole 15 and the through electrode 20 is described in detail. Figure 5 This is a cross-sectional view showing an example of a through hole 15 in substrate 12.

[0134] The through hole 15 has a first dimension R1 at its first end 161 in the surface direction of the first surface 13. The through hole 15 has a second dimension R2 at its second end 162 in the surface direction of the first surface 13. The through hole 15 may include a minimum portion 163 located between the first end 161 and the second end 162. The through hole 15 has a minimum dimension R3 at the minimum portion 163 in the surface direction of the first surface 13. The minimum portion 163 is defined as the portion of the wall surface 16 in the surface direction of the first surface 13 where the dimension of the through hole 15 is the minimum value.

[0135] The first end 161, the second end 162, and the smallest part 163 can have a circular outline when viewed from above. In this case, the first dimension R1, the second dimension R2, and the smallest dimension R3 refer to the diameters of the first end 161, the second end 162, and the smallest part 163.

[0136] The first end 161, the second end 162, and the smallest part 163 may also have contours other than circles when viewed from above. When using contours other than circles, the first dimension R1, the second dimension R2, and the smallest dimension R3 may be equivalent circle diameters. For example, the first dimension R1 may be the diameter of a circle having an area equal to the area enclosed by the contour of the first end 161. For example, the second dimension R2 may be the diameter of a circle having an area equal to the area enclosed by the contour of the second end 162. For example, the smallest dimension R3 may be the diameter of a circle having an area equal to the cross-sectional area of ​​the through hole 15 in the smallest part 163.

[0137] The minimum dimension R3 is smaller than the first dimension R1. The dimension of the through hole 15 can also be monotonically reduced from the first end 161 to the minimum part 163. The minimum dimension R3 is smaller than the second dimension R2. The dimension of the through hole 15 can also be monotonically reduced from the second end 162 to the minimum part 163.

[0138] The minimum dimension R3 can be 40 μm or more, or 50 μm or more, or 60 μm or more. The larger the minimum dimension R3, the higher the allowable current through the internal portion 26 of the electrode 20. The minimum dimension R3 can be 90 μm or less, or 80 μm or less, or 70 μm or less. The smaller the minimum dimension R3, the easier it is to form the closed portion 25 (described later) in the minimum portion 163.

[0139] The first dimension R1 can be 50 μm or more, or 60 μm or more, or 70 μm or more. The first dimension R1 can be 100 μm or less, or 90 μm or less, or 80 μm or less.

[0140] The ratio of the first dimension R1 to the smallest dimension R3, i.e., R1 / R3, is, for example, 2.0 or more, or 2.2 or more, or 2.5 or more. Since the ratio R1 / R3 is 2.0 or more, the allowable current of the internal portion 26 of the through electrode 20 is sufficiently increased. The ratio R1 / R3 is, for example, 3.0 or less, or 2.8 or less.

[0141] The ratio of the second dimension R2 to the smallest dimension R3, i.e., R2 / R3, is, for example, 2.0 or more, or 2.2 or more, or 2.5 or more. Since the ratio R2 / R3 is 2.0 or more, the allowable current of the internal portion 26 of the through electrode 20 is sufficiently increased. The ratio R2 / R3 is, for example, 3.0 or less, or 2.8 or less. The ratio R2 / R3 can be the same as or different from the ratio R1 / R3.

[0142] Preferably, the difference between the first dimension R1 and the second dimension R2 is small. The ratio of the second dimension R2 to the first dimension R1, i.e., R2 / R1, is, for example, 0.8 or more, or 0.9 or more. The ratio R2 / R1 is, for example, 1.2 or less, or 1.1 or less. By reducing the difference between the first dimension R1 and the second dimension R2, defects such as pores can be suppressed while the allowable current of the through electrode 20 can be increased efficiently.

[0143] Preferably, the first dimension R1 is sufficiently small relative to the second spacing P2 of the through hole 15. The ratio of the second spacing P2 to the first dimension R1, i.e., P2 / R1, is, for example, 1.5 or more, or 1.6 or more, or 1.8 or more, or 2.0 or more. P2 / R1 is, for example, 3.0 or less, or 2.5 or less, or 2.3 or less.

[0144] As described in the embodiments, the size of the through-hole 15 can be determined to satisfy the condition that "when a DC current of 1A flows through the through-electrode 20, the temperature rise generated in the through-electrode 20 is less than 10°C". The test of flowing current through the through-electrode 20 and measuring the temperature is performed based on JIS C 5012:1993. Current flows through the through-electrode 20 until the temperature stabilizes. In the following description, the above condition is also referred to as the current-resistance condition. The through-electrode 20 that satisfies the current-resistance condition is also referred to as "the through-electrode 20 having current-resistance".

[0145] The through electrode 20 that meets the current resistance requirement preferably includes four or more internal portions 26, having a first dimension R1 and a second dimension R2 of 70 μm or more, and a minimum dimension R3 of 35 μm or more.

[0146] like Figure 5 As shown, the smallest part 163 can be located between the first surface 13 and the second surface 14 in the thickness direction of the substrate 12. Figure 5 In the figure, reference numeral K3 indicates the distance from the first surface 13 to the smallest portion 163 in the thickness direction of the substrate 12. When the smallest portion 163 is located between the first surface 13 and the second surface 14, the ratio of distance K3 to the thickness T0 of the substrate, i.e., K3 / T0, is 0.50.

[0147] Although not shown in the figure, the position of the minimum portion 163 in the thickness direction of the substrate 12 can be offset from the midpoint between the first surface 13 and the second surface 14. That is, the ratio K3 / T0 can also be offset from 0.50. The ratio K3 / T0 is, for example, 0.40 or more, or 0.45 or more. The ratio K3 / T0 is, for example, 0.60 or less, or 0.55 or less.

[0148] Figure 6 This is a cross-sectional view showing an example of the through electrode 20. The internal portion 26 of the through electrode 20 is partially located within the through hole 15. The term "partially" means that the entire space of the through hole 15 is not entirely occupied by the internal portion 26. The internal portion 26 extends along the wall 16 of the through hole 15 from the first surface 13 to the second surface 14.

[0149] The through electrode 20 comprises a conductive material. The through electrode 20 includes at least a plating layer 201. The plating layer 201 is a conductive layer formed by plating methods such as electroplating. The through electrode 20 may include a seed layer 202. The seed layer 202 is located between the surface of the substrate 12, such as the first surface 13, the second surface 14, and the wall surface 16, and the plating layer 201. The seed layer 202 is a conductive layer formed by physical film deposition such as sputtering.

[0150] The through electrode 20 is mostly composed of a plating layer 201. The ratio of the thickness of the plating layer 201 to the thickness of the through electrode 20 located on the wall surface 16 is, for example, 0.80 or more, or 0.90 or more.

[0151] The plating layer 201 may contain metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, titanium, chromium, and zinc, or alloys of these metals. The seed layer 202 may contain metal materials such as copper, nickel, titanium, chromium, and zinc. The seed layer 202 may contain compounds of these metal materials.

[0152] The internal portion 26 of the through electrode 20 may include a third portion 23, a fourth portion 24, and a closing portion 25. The closing portion 25 is located on the smallest portion 163 of the wall surface 16 of the through hole 15. The closing portion 25 closes the through hole 15 at the smallest portion 163. The third portion 23 is located on the wall surface 16 between the first portion 21 and the closing portion 25. The third portion 23 is connected to the first portion 21 and the closing portion 25. The fourth portion 24 is located on the wall surface 16 between the second portion 22 and the closing portion 25. The fourth portion 24 is connected to the second portion 22 and the closing portion 25.

[0153] The closed portion 25 includes a first closed surface 251 and a second closed surface 252. The first closed surface 251 is the surface of the closed portion 25 facing the first surface 13. The second closed surface 252 is the surface of the closed portion 25 facing the second surface 14.

[0154] Parts 3 and 4 extend along the wall 16 of the through hole 15 when viewed from above, so as to surround the center of the through hole 15.

[0155] The first part 21, the second part 22, the third part 23, the fourth part 24 and the closed part 25 of the through electrode 20 may each include the above-mentioned plating layer 201 and seed crystal layer 202.

[0156] (Internal resin)

[0157] The internal resin 30 is partially located in the through hole 15. The internal resin 30 contains resin material that fills the space in the through hole 15 where the through electrode 20 is not present. The internal resin 30 includes a first internal resin 31 located inside the third portion 23 of the through electrode 20 and a second internal resin 32 located inside the fourth portion 24 of the through electrode 20. The term "inner side" refers to the orientation close to the center point C2 of the through hole 15 when viewed from above. The term "outer side" (described later) refers to the orientation away from the center point C2 of the through hole 15 when viewed from above.

[0158] The internal resin 30 contains an insulating resin material. The resin material may be, for example, an organic material such as polyimide, epoxy resin, acrylic resin, or polyphenylene ether.

[0159] refer to Figure 7 To illustrate the dimensions of the structural elements of the through electrode 20. Figure 7 This is a cross-sectional view showing an example of the dimensions of the through electrode 20. Figure 7 In the text, the internal resin 30 is omitted.

[0160] exist Figure 7 In the attached figures, reference numeral K1 represents the maximum value of the distance in the thickness direction of the substrate 12 from the first surface 13 to the first closing surface 251 of the closing portion 25. Distance K1 is also called the first distance. Reference numeral K2 represents the maximum value of the distance in the thickness direction of the substrate 12 from the second surface 14 to the second closing surface 252 of the closing portion 25. Distance K2 is also called the second distance. Reference numeral T5 represents the thickness of the closing portion 25. The thickness T5 is calculated by subtracting the first distance K1 and the second distance K2 from the thickness T0 of the substrate 12. That is, T5 = T0 - (K1 + K2).

[0161] The greater the thickness T5 of the closed portion 25, the higher the allowable current through the electrode 20. However, the greater the thickness T5 of the closed portion 25, the more likely it is to generate defects such as pores in the plating layer 201. Taking these aspects into consideration, it is preferable that the first distance K1 and the second distance K2 are large enough to be acceptable.

[0162] The ratio of the first distance K1 to the thickness T0 of the substrate 12, i.e., K1 / T0, is, for example, 0.10 or more, or 0.15 or more, or 0.20 or more. The ratio K1 / T0 is, for example, 0.40 or less, or 0.35 or less, or 0.30 or less.

[0163] The ratio of the second distance K2 to the thickness T0 of the substrate 12, i.e., K2 / T0, is, for example, 0.10 or more, or 0.15 or more, or 0.20 or more. The ratio K2 / T0 is, for example, 0.40 or less, or 0.35 or less, or 0.30 or less. The ratio K2 / T0 can be the same as or different from the ratio K1 / T0.

[0164] The ratio of the thickness T5 of the closed portion 25 to the thickness T0 of the substrate 12, i.e., T5 / T0, is, for example, 0.20 or more, or 0.25 or more. The ratio T5 / T0 is, for example, 0.40 or less, or 0.35 or less.

[0165] exist Figure 7In the attached drawing, reference numeral θ1 indicates the angle between the first surface 13 at the first end 161 and the wall surface 16. Angle θ1 can be greater than 90°. Since the through hole 15 includes the minimum portion 163, angle θ1 can be greater than 90°. Angle θ1 can be, for example, 95° or more, or 100° or more, or 105° or more. Angle θ1 can be, for example, 150° or less, or 135° or less, or 120° or less.

[0166] exist Figure 7 In the attached figure, reference θ2 represents the angle between the second surface 14 at the second end 162 and the wall surface 16. Similar to angle θ1, angle θ2 can also be greater than 90°. The numerical range of angle θ2 can be the same as that of angle θ1 described above.

[0167] When the coefficients of thermal expansion of the through electrode 20 and the substrate 12 are different, if the temperature of the through electrode 20 changes, expansion or contraction of the through electrode 20 relative to the substrate 12 will occur. This expansion or contraction will generate stress between the substrate 12 and the through electrode 20. The stress caused by temperature changes is also called thermal stress. It is assumed that if expansion or contraction occurs in the internal portion 26 of the through electrode 20, large thermal stresses will be generated at the first end 161 and the second end 162 of the through hole 15.

[0168] In this embodiment, since the through hole 15 includes a minimum portion 163, the angles θ1 and θ2 can be greater than 90°. Angles θ1 and θ2 being greater than 90° can reduce thermal stress at the first end 161 and the second end 162.

[0169] exist Figure 7 In the attached figures, reference numeral T3 indicates the thickness of the third portion 23 of the through electrode 20. The thickness T3 of the third portion 23 in the thickness direction of the substrate 12 is determined by a position at a distance S3 from the first surface 13. The distance S3 is 50 μm. Reference numeral T4 indicates the thickness of the fourth portion 24 of the through electrode 20. The thickness T4 of the fourth portion 24 in the thickness direction of the substrate 12 is determined by a position at a distance S4 from the second surface 14. The distance S4 is 50 μm. Both thickness T3 and thickness T4 are dimensions of the through electrode 20 in the surface direction of the first surface 13.

[0170] The greater the thicknesses T3 and T4, the higher the allowable current through electrode 20. However, the greater the thicknesses T3 and T4, the lower the uniformity of the thicknesses of the third part 23 and the fourth part 24.

[0171] Thicknesses T3 and T4 can be 20 μm or more, or 25 μm or more, or 30 μm or more. Thicknesses T3 and T4 can be 50 μm or less, or 40 μm or less, or 35 μm or less.

[0172] By appropriately determining the upper limits of thickness T3 and thickness T4, the uniformity of the thickness of the third part 23 and the fourth part 24 can be ensured.

[0173] The uniformity of the thickness of the third portion 23 is evaluated by measuring the thickness of the third portion 23 at multiple locations in the thickness direction of the substrate 12. For example, if the difference between the maximum and minimum values ​​of the thicknesses T3, T31, and T32 of the third portion 23 is 0.10 μm or less, the thickness deviation of the third portion 23 is determined to be 0.10 μm or less. Thickness T3 is the thickness of the third portion 23 measured at a distance S3 from the first surface 13 in the thickness direction of the substrate 12. Thickness T31 is the thickness of the third portion 23 measured at a distance (S3 + 20 μm) from the first surface 13 in the thickness direction of the substrate 12. Thickness T32 is the thickness of the third portion 23 measured at a distance (S3 - 20 μm) from the first surface 13 in the thickness direction of the substrate 12.

[0174] Similar to the case of Part 3, 23, the uniformity of the thickness of Part 4 is evaluated by measuring the thickness of Part 4 at multiple locations in the thickness direction of the substrate 12. For example, if the difference between the maximum and minimum values ​​of the thicknesses T4, T41, and T42 of Part 4 is 0.10 μm or less, the thickness deviation of Part 4 is determined to be 0.10 μm or less. Thickness T4 is the thickness of Part 4 measured at a distance S4 from the second surface 14 in the thickness direction of the substrate 12. Thickness T41 is the thickness of Part 4 measured at a distance (S4 + 20 μm) from the second surface 14 in the thickness direction of the substrate 12. Thickness T42 is the thickness of Part 4 measured at a distance (S4 - 20 μm) from the second surface 14 in the thickness direction of the substrate 12.

[0175] The ratio of the minimum dimension R3 to the thickness T3 of the third part 23, i.e., R3 / T3, is, for example, 1.2 or more, or 1.5 or more, or 1.8 or more. Since the ratio R3 / T3 is 1.2 or more, the reliability of the through electrode 20 can be improved. The ratio R3 / T3 is, for example, 3.0 or less, or 2.4 or less, or 2.2 or less. Since the ratio R3 / T3 is 3.0 or less, the allowable current of the through electrode 20 is sufficiently increased.

[0176] The ratio of the minimum dimension R3 to the thickness T4 of part 4 24, i.e., R3 / T4, is similar to the ratio R3 / T3, for example, 1.2 or more, or 1.5 or more, or 1.8 or more. The ratio R3 / T4 is similar to the ratio R3 / T3, for example, 3.0 or less, or 2.4 or less, or 2.2 or less.

[0177] The first portion 21 located on the first surface 13 has a thickness T1. The thickness T1 of the first portion 21 can be the same as the thickness T3 of the third portion 23. The thickness T1 of the first portion 21 can be greater than the thickness T3 of the third portion 23, or it can be less than the thickness T3 of the third portion 23.

[0178] The second portion 22 located on the second surface 14 has a thickness T2. The thickness T2 of the second portion 22 can be the same as the thickness T4 of the fourth portion 24. The thickness T2 of the second portion 22 can be greater than the thickness T4 of the fourth portion 24, or it can be less than the thickness T4 of the fourth portion 24.

[0179] The aforementioned distance and dimensions of the substrate 12 and the through electrode 20 are calculated based on an image of the plane or cross-section of the through electrode substrate 10 obtained by an electron microscope.

[0180] (Manufacturing method of through electrode substrate)

[0181] An example of a method for manufacturing the through electrode substrate 10 will be described.

[0182] (Through hole formation process)

[0183] Prepare substrate 12. Next, a resist layer is formed on at least one of the first surface 13 or the second surface 14. Then, an opening is formed in the resist layer at a position corresponding to the through hole 15. Next, the substrate 12 is processed through the opening in the resist layer. As a result, as shown... Figure 8 As shown, a through-hole 15 is formed in the substrate 12. The through-hole 15 includes a wall 16 extending from the first surface 13 to the second surface 14. Methods for processing the substrate 12 include dry etching, wet etching, etc. Dry etching methods include reactive ion etching, deep-penetration reactive ion etching, etc.

[0184] A through-hole 15 can also be formed on the substrate 12 by irradiating it with a laser. In this case, a resist layer may not be required. Excimer lasers, Nd:YAG lasers, femtosecond lasers, etc., can be used as the laser. When using an Nd:YAG laser, a fundamental wavelength of 1064 nm, a second harmonic wavelength of 532 nm, a third harmonic wavelength of 355 nm, etc., can be used.

[0185] The process of forming a through-hole 15 on the substrate 12 may include: irradiating a first surface 13 and a second surface 14 of the substrate 12 with a laser; and a wet etching process. In this case, the laser is not used for processing the substrate 12, but for partially forming a modification layer on the first surface 13 and the second surface 14 of the substrate 12. In the wet etching process, the modification layer is etched with priority over other parts. A recess is formed in the modification layer on the first surface 13 and a recess is formed in the modification layer on the second surface 14 by wet etching. By connecting the recesses on the first surface 13 and the recesses on the second surface 14, a through-hole 15 having a wall extending from the first surface 13 to the second surface 14 is formed.

[0186] (Through electrode forming process)

[0187] Next, a through electrode forming process is performed to form a through electrode 20 in the through hole 15. The through electrode forming process includes a seed layer forming process and a plating layer forming process.

[0188] like Figure 9 As shown, in the seed layer formation process, a seed layer 202 is formed on the first surface 13, the second surface 14, and the wall surface 16 of the substrate 12. For example, the seed layer 202 is formed by sputtering.

[0189] The coating process includes a resist layer formation process, a coating process, and a resist layer removal process. Figure 10 This is a cross-sectional view illustrating an example of the resist layer formation process. In the resist layer formation process, a first resist layer 81 is partially formed on the seed layer 202 located on the first surface 13, and a second resist layer 82 is partially formed on the seed layer 202 located on the second surface 14. The first resist layer 81 and the second resist layer 82 are configured to cover the areas of the seed layer 202 where the plating layer 201 is not formed.

[0190] Figure 11 This is a cross-sectional view illustrating an example of the plating process. In the plating process, a plating layer 201 is formed on a seed layer 202 by electrolytic plating. For example, a substrate 12 on which the seed layer 202 and resist layers 81 and 82 are formed can be immersed in an electrolytic plating solution. By flowing current through the seed layer 202, the plating layer 201 is deposited on the seed layer 202.

[0191] The through-hole 15 of the substrate 12 includes a minimum portion 163. As the growth of the plating layer 201 progresses, the plating layers 201 formed at the minimum portion 163 along the circumferential direction of the through-hole 15 become interconnected. That is, as... Figure 11As shown, in the smallest portion 163, the through hole 15 is closed by the plating layer 201. That is, a closed portion 25 is formed. In the subsequent plating process, the electrolytic plating solution circulates in the first space SP1 and the second space SP2. The first space SP1 is the space between the smallest portion 163 and the first surface 13 in the thickness direction of the substrate 12. The second space SP2 is the space between the smallest portion 163 and the second surface 14 in the thickness direction of the substrate 12.

[0192] The plating process before the through hole 15 is sealed by the plating layer 201 in the smallest part 163 is called the first plating process. The plating process after the through hole 15 is sealed by the plating layer 201 in the smallest part 163 is called the second plating process.

[0193] In the second coating process, the growth of the coating layer 201 progresses in the first space SP1 and the second space SP2. For example, Figure 12 As shown, the closed portion 25 is grown in the thickness direction of the substrate 12. The timing of the second plating process is adjusted to achieve a numerical range related to the first distance K1, the second distance K2, and the thickness T5 of the closed portion 25, as described above. For example, the second plating process is performed such that the ratio of the thickness T5 of the closed portion 25 to the thickness T0 of the substrate 12 is 0.20 or more and 0.40 or less.

[0194] Next, as Figure 13 As shown, a resist layer removal process is performed to remove the first resist layer 81 and the second resist layer 82. Next, a seed layer removal process is performed to remove a portion of the seed layer 202. In the seed layer removal process, as... Figure 13 As shown, the seed layer 202, which overlaps with the first resist layer 81 and the second resist layer 82 when viewed from above, is removed. Thus, the through electrode 20 is obtained.

[0195] (Resin layer formation process)

[0196] Next, a resin layer forming process for forming the internal resin 30 is performed. For example, a layer containing resin material is formed on the first surface 13 and the second surface 14. For example, a resin film having a layer containing resin material is adhered to the first surface 13 and the second surface 14. Next, the layer containing resin material on the first surface 13 is pressed into the space inside the third portion 23. Furthermore, the layer containing resin material on the second surface 14 is pressed into the space inside the fourth portion 24. Next, the resin material is cured. For example, the layer containing resin material is irradiated with ultraviolet light. As a result, as... Figure 14 As shown, a first internal resin 31 and a second internal resin 32 are formed. In this way, a through electrode substrate 10 having a substrate 12, a through electrode 20 and an internal resin 30 can be obtained.

[0197] In this embodiment, the through-electrode substrate 10 has multiple through-electrodes 20, each comprising multiple internal portions 26 located inside multiple through holes 15. That is, in this embodiment, a multi-through-hole structure is employed. Compared to conventional through-electrodes, the through-electrodes 20 of this embodiment can suppress defects such as pores while increasing the allowable current of the through-electrodes 20.

[0198] The existing through-electrode consists of only one internal portion 26 located inside a single through-hole 15. This configuration, where a single through-electrode 20 consists of only one internal portion 26 located inside a single through-hole 15, is also called a single-through-hole configuration. Two methods can be considered to improve the allowable current of the through-electrode 20 in a single-through-hole configuration. The first method is to increase the first dimension R1 and the second dimension R2 of the through-hole 15. The second method is to increase the thickness of the plating layer 201.

[0199] In the first approach, to meet the aforementioned current resistance requirements, it is preferable that the first dimension R1 and the second dimension R2 are 180 μm or more, and the minimum dimension R3 is 60 μm or more. If the first dimension R1 and the second dimension R2 are increased, the space of the through-hole 15 without the coating layer becomes larger. As a result, there is concern that defects such as pores may occur in the resin material. In the second approach, if the thickness of the coating layer is increased, defects such as pores are more likely to occur in the coating layer. Furthermore, deviations in the thickness and position of the coating layer are also more likely to occur.

[0200] In this embodiment, a multi-hole structure is employed. In this multi-hole structure, by increasing the number of through-holes 15 overlapping one of the first portions 21 when viewed from above, the allowable current of the through electrode 20 can be increased. Therefore, according to this embodiment, even when the size of the through-holes 15 is small and the thickness of the plating layer 201 is small, a sufficient allowable current of the through electrode 20 can be achieved. For example, even if the first dimension R1 and the second dimension R2 are less than 180 μm, and the minimum dimension R3 is less than 60 μm, the aforementioned current withstand capability conditions can be met. Therefore, compared to conventional through electrodes, the through electrode 20 of this embodiment can suppress defects such as porosity while increasing the allowable current of the through electrode 20.

[0201] Preferably, the through electrode 20 includes a first portion 21, a second portion 22, a third portion 23, a fourth portion 24, and a sealing portion 25, and the internal resin 30 includes a first internal resin 31 and a second internal resin 32. In other words, in the third direction D3, the internal resin 30 is divided into the first internal resin 31 and the second internal resin 32 by the sealing portion 25. With this structure, the volume of the first internal resin 31 and the second internal resin 32 is restricted, thereby suppressing the generation of defects such as pores in the resin material.

[0202] Various modifications can be made to the above-described embodiment. Modifications will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the description, parts that can be constructed in the same manner as the corresponding parts in the above-described embodiment are referred to by the same reference numerals. Repeated descriptions are omitted. Furthermore, when it is clear that the effects obtained in the above-described embodiment can also be obtained in the modifications, their descriptions are sometimes omitted as well.

[0203] (Example 1)

[0204] Figure 15 This is a cross-sectional view showing the through-electrode substrate 10 in the first modified example. The internal portion 26 of the through-electrode 20 of the through-electrode substrate 10 may not include the closed portion 25. For example, the internal portion 26 may be located on the wall surface 16, extending from the first end 161 to the second end 162. The through-electrode 20 including such an internal portion 26 is also called a conformal through-hole. The numerical range of the thickness of the internal portion 26 can be a range related to the thicknesses T3 and T4 mentioned above.

[0205] like Figure 15 As shown, the through electrode substrate 10 may have a plurality of internal resins 30 located inside the internal portion 26 within each of the plurality of through holes 15. The plurality of internal resins 30 may extend continuously from the first surface 13 to the second surface 14 within the through holes 15.

[0206] like Figure 15 As shown, the through-hole 15 through the electrode substrate 10 may include a minimum portion 163 located between the first end 161 and the second end 162. By including the minimum portion 163 in the through-hole 15, the volume of the internal resin 30 can be reduced. By reducing the volume of the internal resin 30, the generation of defects such as pores in the resin material can be suppressed. The numerical range of the size of the through-hole 15 can be a range related to the first size R1, the second size R2, and the minimum size R3 mentioned above.

[0207] In the first modification, each of the multiple through electrodes 20 also includes multiple internal portions 26 located inside the multiple through holes 15. That is, the first modification also employs a multi-through-hole structure. The first modification can suppress defects such as pores while increasing the allowable current of the through electrodes 20.

[0208] (Second variation)

[0209] Figure 16 This is a cross-sectional view showing the through electrode substrate 10 in the second modified example. Figure 16 The through hole 15 of the through electrode substrate 10 does not include the minimum portion 163, in relation to Figure 15The through-hole 15 of the through electrode substrate 10 is different. For example, Figure 16 The through hole 15 of the through electrode substrate 10 can have a fixed size regardless of its position in the third direction D3.

[0210] In order for the conformal through-hole structure, which is composed of a through-hole 15 that does not include the minimum portion 163, to meet the above-mentioned current resistance conditions, for example, it is preferable that the first dimension R1 and the second dimension R2 are 104 μm or more, and the thickness of the internal portion 26 is 30 μm or more.

[0211] In the second modification, each of the multiple through electrodes 20 also includes multiple internal portions 26 located inside the multiple through holes 15. That is, the second modification also employs a multi-through-hole structure. According to the second modification, even when the size of the through holes 15 is small, defects such as pores can be suppressed while the allowable current of the through electrodes 20 can be increased. For example, even if the first dimension R1 and the second dimension R2 are less than 104 μm, the above-mentioned current withstand capability conditions can be met.

[0212] (3rd variation)

[0213] Figure 17 This is a cross-sectional view showing the through-electrode substrate 10 in the third modified example. (See diagram below.) Figure 17 As shown, the entire space of the through-hole 15 can be occupied by the internal portion 26. The through electrode 20 containing such an internal portion 26 is also called a filled through-hole.

[0214] The reference numeral T6 in the attached figure indicates the thickness of the internal portion 26. (As shown) Figure 17 As shown, when the entire space of the through hole 15 is occupied by the inner portion 26, the thickness T6 of the inner portion 26 is equal to the thickness T0 of the substrate 12.

[0215] like Figure 17 As shown, the through-hole 15 through the electrode substrate 10 may include a minimum portion 163 located between the first end 161 and the second end 162. By including the minimum portion 163 in the through-hole 15, the volume of the internal portion 26 can be reduced. By reducing the volume of the internal portion 26, the generation of defects such as pores in the conductive material can be suppressed. The numerical range of the size of the through-hole 15 can be a range related to the first size R1, the second size R2, and the minimum size R3 described above.

[0216] In the third modification, each of the multiple through electrodes 20 also includes multiple internal portions 26 located inside the multiple through holes 15. That is, the first modification also employs a multi-through-hole structure. The third modification can also suppress defects such as pores while increasing the allowable current of the through electrodes 20.

[0217] (4th variation)

[0218] Figure 18 This is a cross-sectional view showing the through electrode substrate 10 in the fourth modified example. Figure 18 The through hole 15 of the through electrode substrate 10 does not include the minimum portion 163, in relation to Figure 17 The through-hole 15 of the through electrode substrate 10 is different. For example, Figure 18 The through hole 15 of the through electrode substrate 10 can have a fixed size regardless of its position in the third direction D3.

[0219] In order for the filled through-hole structure consisting of a through-hole 15 that does not include the minimum part 163 to meet the above-mentioned current resistance conditions, for example, the first dimension R1 and the second dimension R2 are preferably 94 μm or more.

[0220] In the fourth modification, each of the multiple through electrodes 20 also includes multiple internal portions 26 located inside the multiple through holes 15. That is, the fourth modification also employs a multi-through-hole structure. According to the fourth modification, even when the size of the through holes 15 is small, defects such as pores can be suppressed while the allowable current of the through electrodes 20 can be increased. For example, even if the first dimension R1 and the second dimension R2 are less than 94 μm, the above-mentioned current withstand capability conditions can be met.

[0221] (5th variation)

[0222] Figure 19 This is a top view showing the through electrode substrate 10 in the fifth modified example. Figure 20 yes Figure 19 A cross-sectional view of the through electrode substrate 10 along line XX-XX. Figure 21 yes Figure 19 A cross-sectional view of the through electrode substrate 10 along the XXI-XXI line.

[0223] The through-electrode substrate 10 may include a first wiring layer 50A and a second wiring layer 50B. The first wiring layer 50A is located on the first surface 13 of the substrate 12. The second wiring layer 50B is located on the second surface 14 of the substrate 12. The first wiring layer 50A includes at least one insulating layer and at least one conductive layer. The second wiring layer 50B includes at least one insulating layer and at least one conductive layer.

[0224] The first wiring layer 50A of the through electrode substrate 10 may include a plurality of first conductive layers 35 and a first resin layer 33. The plurality of first conductive layers 35 are respectively connected to the first portion 21 of the corresponding through electrode 20. In other words, a corresponding first conductive layer 35 is connected to the first portion 21 of the plurality of through electrodes 20. The first resin layer 33 is located between the plurality of first portions 21 and the plurality of first conductive layers 35 in the third direction D3.

[0225] The first conductive layer 35 contains a conductive material. The conductive material may contain metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, titanium, chromium, and zinc, or alloys of these metals.

[0226] like Figure 19 As shown, the plurality of first conductive layers 35 may each have a contour 351 surrounding the plurality of through holes 15 when viewed from above. The contour 351 of the first conductive layer 35 may extend along the contour 211 of the first portion 21 when viewed from above.

[0227] The first resin layer 33 contains an insulating resin material. The resin material may be, for example, an organic material such as polyimide, epoxy resin, acrylic resin, or polyphenylene ether.

[0228] like Figure 19 as well as Figure 21 As shown, the first resin layer 33 may include a plurality of openings 331. The plurality of openings 331 of the first resin layer 33 overlap with the first portion 21 when viewed from above. The portion of the first resin layer 33 that overlaps with one of the first portions 21 when viewed from above may have one opening 331. A portion of the first conductive layer 35 may be located at the opening 331. For example, the first conductive layer 35 may be connected to the first portion 21 of the through electrode 20 at the opening 331 of the first resin layer 33.

[0229] The opening 331 of the first resin layer 33 has a fourth dimension R4 when viewed from above. The opening 331 may have a circular outline when viewed from above. In this case, the fourth dimension R4 refers to the diameter of the opening 331. The opening 331 may also have an outline other than a circle when viewed from above. When an outline other than a circle is used, the fourth dimension R4 may be an equivalent circle diameter. For example, the fourth dimension R4 may be the diameter of a circle having an area equal to the area of ​​the opening 331 when viewed from above.

[0230] The fourth dimension R4 of the opening 331 can be larger than the first dimension R1 of the through hole 15. The ratio of the fourth dimension R4 to the first dimension R1, i.e., R4 / R1, is, for example, 1.2 or more, or 1.5 or more, or 2.0 or more. The larger R4 / R1 is, the lower the contact resistance between the first portion 21 of the through electrode 20 and the first conductive layer 35. R4 / R1 is, for example, 5.0 or less, or 4.0 or less, or 3.0 or less.

[0231] exist Figure 19In the attached drawing, reference numeral P4 indicates the shortest distance between the center point C4 of the opening 331 and the center point C2 of the through hole 15 when viewed from above. The shortest distance P4 can be less than the second spacing P2. The ratio of the shortest distance P4 to the second spacing P2, i.e., P4 / P2, is, for example, 0.9 or less, or 0.8 or less, or 0.7 or less.

[0232] like Figure 20 as well as Figure 21 As shown, the first resin layer 33 may include a portion that is in contact with the first surface 13. The first resin layer 33 may also include a portion that is in contact with the first portion 21.

[0233] like Figure 21 As shown, the first resin layer 33 can be integral with the first internal resin 31 of the internal resin 30. For example, the first resin layer 33 and the first internal resin 31 can be formed from the same resin film in the resin layer forming process.

[0234] like Figures 19-21 As shown, the second wiring layer 50B of the through electrode substrate 10 may include a plurality of second conductive layers 36 and a second resin layer 34. The plurality of second conductive layers 36 are respectively connected to the second portion 22 of the corresponding through electrode 20. In other words, a corresponding second conductive layer 36 is connected to each of the second portions 22 of the plurality of through electrodes 20. The second resin layer 34 is located between the plurality of second portions 22 and the plurality of second conductive layers 36 in the third direction D3.

[0235] The second conductive layer 36 contains a conductive material. The conductive material may contain metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, titanium, chromium, and zinc, or alloys of these metals.

[0236] The plurality of second conductive layers 36 may each have a profile 361 that includes a plurality of through holes 15 when viewed from above. The profile 361 of the second conductive layer 36 may extend along the profile 221 of the second portion 22 when viewed from above.

[0237] The second resin layer 34 contains an insulating resin material. The resin material may be, for example, an organic material such as polyimide, epoxy resin, acrylic resin, or polyphenylene ether.

[0238] The second resin layer 34 may include a plurality of openings 341. The plurality of openings 341 of the second resin layer 34 overlap with the second portion 22 when viewed from above. A portion of the second conductive layer 36 may be located in the openings 341. For example, the second conductive layer 36 may be connected to the second portion 22 of the through electrode 20 through the openings 341 of the second resin layer 34.

[0239] like Figure 20 as well as Figure 21As shown, the second resin layer 34 may include a portion that is in contact with the second surface 14. The second resin layer 34 may also include a portion that is in contact with the second portion 22.

[0240] like Figure 21 As shown, the second resin layer 34 can be integral with the second inner resin 32 of the inner resin 30. For example, the second resin layer 34 and the second inner resin 32 can be formed from the same resin film in the resin layer forming process.

[0241] (Sixth variation)

[0242] Figure 22 This is a cross-sectional view showing the through electrode substrate 10 in the sixth modified example. Figure 22 The through electrode substrate 10 has multiple first bumps 51, which is consistent with... Figure 21 The through electrode substrate 10 is different. The through electrode substrate 10 may have a plurality of second bumps 52.

[0243] Multiple first bumps 51 may be located on the conductive layer of the first wiring layer 50A. For example, multiple first bumps 51 may be located on the first conductive layer 35 connected to the first portion 21 of the through electrode 20. The first bumps 51 may contain solder.

[0244] Multiple second bumps 52 may be located on the conductive layer of the second wiring layer 50B. For example, multiple second bumps 52 may be located on the second conductive layer 36 connected to the second portion 22 of the through electrode 20. The second bumps 52 may contain solder.

[0245] (Seventh variation)

[0246] Figure 23 This is a cross-sectional view showing the through electrode substrate 10 in the 7th modified example. Figure 23 The through electrode substrate 10, in terms of having the element 60, is similar to... Figure 22 The through electrode substrate 10 is different. The through electrode substrate 10 on which the component 60 is mounted is also called a mounting substrate.

[0247] Component 60 can be a semiconductor component. A semiconductor component includes a transistor formed from semiconductors such as silicon. Examples of semiconductor components include CPUs, GPUs, FPGAs, sensors, and memory. A semiconductor component can also be a chip formed by functionally dividing semiconductor components such as CPUs, GPUs, FPGAs, sensors, and memory.

[0248] Component 60 may include multiple terminals 61. The multiple terminals 61 may be connected to the corresponding first protrusion 51 respectively.

[0249] Although not shown in the figure, the through electrode substrate 10, which carries the component 60, can be mounted on a wiring substrate such as a motherboard. For example, multiple second bumps 52 can be connected to corresponding pads on the wiring substrate.

[0250] (8th variation)

[0251] Figure 24 This is a cross-sectional view showing the through electrode substrate 10 in the 8th modified example. Figure 24 The first wiring layer 50A of the through electrode substrate 10 has multiple third conductive layers 39 and third resin layers 37, which is consistent with... Figure 21 The through electrode substrate 10 is different.

[0252] like Figure 24 As shown, multiple third conductive layers 39 can be connected to each of the multiple first conductive layers 35. In other words, multiple third conductive layers 39 can be connected to one first conductive layer 35. The third resin layer 37 is located between the first conductive layer 35 and the multiple third conductive layers 39 in the third direction D3.

[0253] The third conductive layer 39 contains a conductive material. The conductive material may contain metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, titanium, chromium, and zinc, or alloys of these metals.

[0254] The third resin layer 37 contains an insulating resin material. The resin material may be, for example, an organic material such as polyimide, epoxy resin, acrylic resin, or polyphenylene ether.

[0255] like Figure 24 As shown, the through electrode substrate 10 may have a plurality of first bumps 51 located on a plurality of third conductive layers 39.

[0256] like Figure 25 As shown, the through electrode substrate 10 may include an element 60. The element 60 may include a plurality of terminals 61. The plurality of terminals 61 may be connected to a corresponding first bump 51.

[0257] The number and configuration of the third conductive layers 39 connected to one first conductive layer 35 are determined according to the number and configuration of the terminals 61 of the element 60. According to the eighth variation, by connecting multiple third conductive layers 39 to one first conductive layer 35, the through electrode substrate 10 can be adapted to various configurations of multiple terminals 61.

[0258] (9th variation)

[0259] Figure 26This is a cross-sectional view showing the through electrode substrate 10 in the 9th modified example. The two adjacent through electrodes 20 are also referred to as the first through electrode 20A and the second through electrode 20B. The first through electrode 20A can be connected to the power supply potential, and the second through electrode 20B can be connected to the ground potential.

[0260] The first conductive layer 35 connected to the first through electrode 20A may extend outward beyond the outline 211 of the first portion 21 of the first through electrode 20A. The first portion 21 of the second through electrode 20B may extend outward beyond the outline 351 of the first conductive layer 35 connected to the first portion 21 of the second through electrode 20B. In the third direction D3, a portion of the first conductive layer 35 connected to the first through electrode 20A and a portion of the first portion 21 of the second through electrode 20B may face each other. A portion of the first resin layer 33 is located between the face-to-face portions of the first conductive layer 35 and the first portion 21. The capacitor 70 is formed by the portion of the first conductive layer 35, the portion of the first portion 21, and the portion of the first resin layer 33.

[0261] The electrostatic capacitance of capacitor 70 is, for example, 1 pF or more, or 10 pF or more. The electrostatic capacitance of capacitor 70 is, for example, less than 1 nF, or less than 100 pF. Capacitor 70 improves the stability of the power supply voltage of component 60.

[0262] (Example 10)

[0263] Figure 27 This is a cross-sectional view showing the through-electrode substrate 10 in the 10th modification. In addition to the plurality of through-electrodes 20 having a multi-hole structure, the through-electrode substrate 10 may also have a plurality of through-electrodes 80 having a single-hole structure. The plurality of through-electrodes 20 can be electrically connected to a power supply potential or a ground potential. The plurality of through-electrodes 80 can be electrically connected to data transmission wiring or terminals.

[0264] Figure 28 This diagram illustrates an example of a product equipped with the through electrode substrate 10. The through electrode substrate 10 can be used in various products. For example, it can be used in a notebook computer 110, a tablet computer 120, a mobile phone 130, a smartphone 140, a digital camera 150, a digital camera 160, a digital watch 170, a server 180, etc.

[0265] (Example 11)

[0266] Figure 30 This is a cross-sectional view showing the through electrode substrate 10 in the 10th modified example. Figure 30 The example shown relates to the connection of the plurality of terminals 61 of element 60 with the second protrusion 52. Figure 23The examples shown are different.

[0267] Although not shown in the figure, the through electrode substrate 10 carrying the component 60 can be mounted on a wiring substrate such as a motherboard. For example, a plurality of first bumps 51 can be respectively connected to corresponding pads on the wiring substrate.

[0268] (12th variation)

[0269] Figure 31 This is a top view showing a portion of the through electrode substrate 10 in the 12th variation. Figure 32 yes Figure 31 A cross-sectional view of the through electrode substrate 10 along line XXXII-XXXII.

[0270] The first wiring layer 50A may include a plurality of first conductive layers 35 respectively connected to a plurality of first portions 21. That is, a plurality of first conductive layers 35 may be connected to a single first portion 21. The plurality of first conductive layers 35 connected to a single first portion 21 may be spaced apart from each other in the in-plane direction of the first surface 13.

[0271] The first resin layer 33 of the first wiring layer 50A may include a plurality of openings 331. The plurality of openings 331 of the first resin layer 33 overlap with the first portion 21 when viewed from above. The plurality of openings 331 of the first resin layer 33 may overlap with the through-hole 15 and the internal portion 26 when viewed from above. A plurality of first conductive layers 35 connected to one of the first portions 21 may be connected to the first portion 21 at the openings 331.

[0272] The second wiring layer 50B may include a plurality of second conductive layers 36 respectively connected to a plurality of second portions 22. That is, a plurality of second conductive layers 36 may be connected to one second portion 22. The plurality of second conductive layers 36 connected to one second portion 22 may be spaced apart from each other in the in-plane direction of the second surface 14.

[0273] The second resin layer 34 of the second wiring layer 50B may include a plurality of openings 341. The plurality of openings 341 of the second resin layer 34 overlap with the second portion 22 when viewed from above. The plurality of openings 341 of the second resin layer 34 may overlap with the through-hole 15 and the internal portion 26 when viewed from above. A plurality of second conductive layers 36 connected to one second portion 22 may be connected to the second portion 22 at the openings 341.

[0274] The plurality of internal portions 26 connected to a first portion 21 can be filled through holes respectively.

[0275] Although not shown in the figure, the multiple internal portions 26 can be through holes of a type other than those that fill through holes. When the multiple internal portions 26 are through holes of a type other than those that fill through holes, the multiple openings 331 of the first resin layer 33 can be respectively not overlapped with the through hole 15 and the internal portions 26 when viewed from above.

[0276] (Example 13)

[0277] Figure 33 This is a top view showing a portion of the through electrode substrate 10 in the 13th modified example. Figure 34 yes Figure 33 A cross-sectional view of the through electrode substrate 10 along line XXXIV-XXXIV. The through electrode substrate 10 includes a substrate 12, a plurality of through electrodes 20, a first wiring layer 50A, and a second wiring layer 50B.

[0278] The through electrode substrate 10 in the 13th variation differs from the above-described embodiments and variations in that the through electrode 20 does not include the first part 21 and the second part 22.

[0279] In the through-electrode substrate 10 of the 13th modification, the internal portions 26 of the plurality of through holes 15 are filled through holes. Each of the plurality of internal portions 26 includes a first end face 261 and a second end face 262. The first end face 261 and the second end face 262 are end faces of the internal portions 26 in the thickness direction of the substrate 12. The first end face 261 is close to the first surface 13. The second end face 262 is close to the second surface 14.

[0280] The internal portion 26 has a thickness T6 in the thickness direction of the substrate 12. The thickness T6 of the internal portion 26 can be almost equal to the thickness T0 of the substrate 12. The ratio of the thickness T6 of the internal portion 26 to the thickness T0 of the substrate 12, i.e., T6 / T0, is, for example, 0.80 or more, or 0.85 or more, or 0.90 or more. The ratio T6 / T0 is, for example, 1.20 or less, or 1.15 or less, or 1.10 or less. The thickness T6 is measured along an imaginary straight line passing through the center point of the through hole 15 when viewed from above and extending in the thickness direction. The internal portion 26 that satisfies the above-mentioned numerical range related to T6 / T0 is also called a filled through hole.

[0281] In this modified example, similarly to the embodiments and modifications described above, a single through-hole electrode 20 is formed by electrically connecting multiple internal portions 26 to each other. That is, a multi-hole structure is also employed in this modified example. Therefore, even with a small size of the through-hole 15, sufficient allowable current can be achieved in the through-hole electrode 20. Because the through-hole 15 is small, defects such as pores in the internal portions 26 are suppressed.

[0282] In this modified example, multiple internal portions 26 are electrically connected to each other through at least one conductive layer contained in the first wiring layer 50A. The first wiring layer 50A will be described below.

[0283] like Figure 33 As shown, the first wiring layer 50A may include a first resin layer 33 and a plurality of first conductive layers 35. For example... Figure 34 As shown, the first resin layer 33 is located on the first surface 13. The first resin layer 33 can be in contact with the first surface 13.

[0284] The first resin layer 33 includes a plurality of openings 331 extending through the first resin layer 33. For example... Figure 33 as well as Figure 34 As shown, the plurality of openings 331 of the first resin layer 33 can overlap with a through hole 15 and an internal portion 26 respectively when viewed from above. Figure 33 as well as Figure 34 In the example shown, the four openings 331 overlap with one of the four internal portions 26.

[0285] The first resin layer 33 may overlap with the boundary between the wall surface 16 and the interior portion 26 of the through hole 15 when viewed from above. For example, the first resin layer 33 may overlap with the first end 161 of the wall surface 16 when viewed from above. The first end 161 defines the boundary between the wall surface 16 and the interior portion 26 in the first surface 13.

[0286] During the manufacturing process of the through-electrode substrate 10, gas is sometimes generated. For example, gas is generated from the internal portion 26. The gas is, for example, water vapor. The gas is generated, for example, during the process of heating the structural elements of the through-electrode substrate 10.

[0287] Gas may be trapped in gaps within the electrode substrate 10. For example, gas may be trapped in the gap between the wall 16 and the interior portion 26. If gas continues to be trapped in gaps within the electrode substrate 10, there is a concern that the gas pressure may cause deformation or damage within the electrode substrate 10.

[0288] In this modified example, the first resin layer 33 overlaps with the boundary between the wall 16 and the internal portion 26 of the through hole 15 when viewed from above. The molecular structure of the resin material constituting the first resin layer 33 is larger than that of gases such as water vapor. Gas in the gap between the wall 16 and the internal portion 26 is released to the outside of the through electrode substrate 10 through the first resin layer 33. Therefore, deformation, damage, etc., that occur inside the through electrode substrate 10 are suppressed.

[0289] Multiple first conductive layers 35 are respectively located on the first resin layer 33. Each of the multiple first conductive layers 35 has a contour 351. The contour 351 is the outer edge of the first conductive layer 35 when viewed from above. Figure 33 As shown, the outlines 351 of the plurality of first conductive layers 35 can respectively surround the first ends 161 of the walls 16 of the plurality of through holes 15 when viewed from above. That is, the first ends 161 of the walls 16 of the plurality of through holes 15 can be located inside the outline 351 of one first conductive layer 35.

[0290] Each first conductive layer 35 can be connected to multiple internal portions 26 through multiple openings 331. As a result, the multiple internal portions 26 are electrically connected to each other through a first conductive layer 35. The multiple internal portions 26 electrically connected through a first conductive layer 35 constitute a through electrode 20.

[0291] Multiple internal portions 26 can also be electrically connected to each other through at least one conductive layer contained in the second wiring layer 50B. The second wiring layer 50B will be described below.

[0292] The second wiring layer 50B may include a second resin layer 34 and a plurality of second conductive layers 36. The second resin layer 34 is located on the second surface 14. The second resin layer 34 may be in contact with the second surface 14.

[0293] The second resin layer 34 includes a plurality of openings 341 extending through the second resin layer 34. The plurality of openings 341 of the second resin layer 34 may overlap with the through hole 15 and the internal portion 26 respectively when viewed from above.

[0294] The second resin layer 34 can overlap with the boundary between the wall surface 16 and the interior portion 26 of the through hole 15 when viewed from above. For example, the second resin layer 34 can overlap with the second end 162 of the wall surface 16 when viewed from above. The second end 162 defines the boundary between the wall surface 16 and the interior portion 26 in the second surface 14.

[0295] Similar to the case of the first resin layer 33, the molecular structure of the resin material constituting the second resin layer 34 is larger than that of gases such as water vapor. Gas in the gap between the wall surface 16 and the internal portion 26 is released to the outside of the electrode substrate 10 through the second resin layer 34. Therefore, deformation, damage, etc., that occur inside the electrode substrate 10 are suppressed.

[0296] Multiple second conductive layers 36 are respectively located on the second resin layer 34. The outlines 361 of the multiple second conductive layers 36 can respectively surround the second ends 162 of the wall surfaces 16 of the multiple through holes 15 when viewed from above. That is, the second ends 162 of the wall surfaces 16 of the multiple through holes 15 can be located inside the outline 361 of one second conductive layer 36.

[0297] Each of the second conductive layers 36 can be connected to a plurality of internal portions 26 through a plurality of openings 341. As a result, the plurality of internal portions 26 are electrically connected to each other through a single second conductive layer 36.

[0298] The specific structure of the internal portion 26, which is formed by the filled through-hole, and the specific structure of the through-hole 15 are not particularly limited. For example, as... Figure 34 As shown, the internal portion 26 and the through hole 15 can have fixed dimensions regardless of their positions in the third direction D3.

[0299] Figure 35 This is a cross-sectional view showing an example of a through-hole electrode substrate 10. The through-hole 15 may include a minimum portion 163. In this case, the size of the internal portion 26 in the surface direction of the substrate 12 becomes the smallest at the minimum portion 163.

[0300] Figure 36 This is a cross-sectional view showing an example of a through-hole substrate 10. The internal portion 26, formed by the filled through-hole, may include a plating layer 201 and a seed layer 202. The plating layer 201 is configured to overlap with the center point of the through-hole 15 when viewed from above. The seed layer 202 is located between the plating layer 201 and the wall surface 16.

[0301] (Example 14)

[0302] Figure 37 This is a cross-sectional view showing the through electrode substrate 10 in the 14th modification. The through electrode substrate 10 includes a substrate 12, a plurality of through electrodes 20, a first wiring layer 50A, and a second wiring layer 50B.

[0303] The through electrode substrate 10 in the 14th modification differs from the through electrode substrate 10 in the 13th modification in that the first wiring layer 50A includes a plurality of insulating layers and a plurality of conductive layers stacked in the thickness direction of the substrate 12.

[0304] like Figure 37 As shown, the first wiring layer 50A may include a first resin layer 33, a third resin layer 37, a fifth resin layer 41, a first conductive layer 35, and a third conductive layer 39.

[0305] Similar to the case of the 13th variation, multiple internal portions 26 can be electrically connected to each other through a first conductive layer 35.

[0306] The third resin layer 37 is located on the first resin layer 33 and the first conductive layer 35. The third resin layer 37 includes a plurality of openings 371. The third conductive layer 39 is located on the third resin layer 37. The third conductive layer 39 can be connected to the first conductive layer 35 through the plurality of openings 371 of the third resin layer 37.

[0307] The fifth resin layer 41 is located on the third resin layer 37 and the third conductive layer 39. The fifth resin layer 41 includes at least one opening 411. The opening 411 of the fifth resin layer 41 can overlap with the third conductive layer 39 when viewed from above. In other words, a portion of the third conductive layer 39 can be exposed through the opening 411 of the fifth resin layer 41.

[0308] The through-electrode substrate 10 may have a first bump 51 located on the conductive layer of the first wiring layer 50A. For example, as Figure 37 As shown, the first bump 51 can be located on the third conductive layer 39 through the opening 411 of the fifth resin layer 41.

[0309] A first protrusion 51 can be electrically connected to multiple internal portions 26. Figure 37 In the example shown, one first bump 51 is electrically connected to a plurality of internal portions 26 via a third conductive layer 39 and a first conductive layer 35. The through electrode substrate 10 may have a plurality of first bumps 51 respectively electrically connected to the plurality of internal portions 26.

[0310] Although not shown in the figure, the through electrode substrate 10 having multiple first bumps 51 can be mounted on a wiring substrate such as a motherboard. For example, the multiple first bumps 51 can be connected to corresponding pads on the wiring substrate.

[0311] The in-plane dimension of the first surface 13 of the opening of the resin layer of the first wiring layer 50A, which relates to the electrical path between the internal portion 26 and the first bump 51, is preferably 50 μm or more. For example, the dimensions of the opening 331 of the first resin layer 33 and the opening 371 of the third resin layer 37 are preferably both 50 μm or more. As a result, the resistance on the path between the internal portion 26 and the first bump 51 is reduced. Therefore, sufficient allowable current for the first bump 51 can be achieved.

[0312] like Figure 37 As shown, the second wiring layer 50B may include a second resin layer 34, a fourth resin layer 38, a second conductive layer 36, and a plurality of fourth conductive layers 40.

[0313] Similar to the case of the 13th variation, multiple internal portions 26 can be electrically connected to each other through a second conductive layer 36.

[0314] The fourth resin layer 38 is located on the second resin layer 34 and the second conductive layer 36. The fourth resin layer 38 includes a plurality of openings 381. A plurality of fourth conductive layers 40 are respectively located on the fourth resin layer 38. The plurality of fourth conductive layers 40 can be respectively connected to one second conductive layer 36 through the plurality of openings 381 of the fourth resin layer 38. The plurality of fourth conductive layers 40 connected to one second conductive layer 36 can be separated from each other in the in-plane direction of the second surface 14.

[0315] Although not shown, the through electrode substrate 10 may have a plurality of second bumps respectively located on a plurality of fourth conductive layers 40. Although not shown, a plurality of terminals of the component may be connected to the corresponding second bumps.

[0316] (Example 15)

[0317] Figure 38 This is a cross-sectional view showing the through electrode substrate 10 in the 15th modified example. The through electrode substrate 10 includes a substrate 12, a plurality of through electrodes 20, a first wiring layer 50A, and a second wiring layer 50B.

[0318] like Figure 38 As shown, the first wiring layer 50A may include a first resin layer 33, a third resin layer 37, a fifth resin layer 41, a plurality of first conductive layers 35 and a third conductive layer 39.

[0319] The through electrode substrate 10 in the 15th modification differs from the through electrode substrate 10 in the 14th modification in that the plurality of internal portions 26 are electrically connected to each other through the third conductive layer 39 instead of the first conductive layer 35.

[0320] In this modified example, multiple first conductive layers 35 are respectively connected to an internal portion 26 through an opening 331 of the first resin layer 33. For example, four first conductive layers 35 are respectively connected to an internal portion 26 through a corresponding opening 331 of the four openings 331. The multiple first conductive layers 35 are spaced apart from each other in the in-plane direction of the first surface 13. Therefore, the multiple internal portions 26 are not electrically connected through the first conductive layers 35.

[0321] A third resin layer 37 is located on the first resin layer 33 and on a plurality of first conductive layers 35. The third resin layer 37 includes a plurality of openings 371. The plurality of openings 371 overlap with the first conductive layers 35 respectively. A third conductive layer 39 is connected to the plurality of first conductive layers 35 through the plurality of openings 371. As a result, a plurality of internal portions 26 are electrically connected to each other through the third conductive layer 39. In this modified example, the plurality of electrically connected internal portions 26 also constitute a through electrode 20. That is, in this modified example, a multi-hole structure is also used.

[0322] The through-electrode substrate 10, like the embodiments and variations described above, may have a plurality of through electrodes 20. Each of the plurality of through electrodes 20 may include a plurality of internal portions 26 electrically connected to each other through the third conductive layer 39.

[0323] The conductive layer of the first wiring layer 50A that electrically connects the multiple internal portions 26 can be a conductive layer other than the third conductive layer 39. For example, although not shown, the fifth conductive layer located on the fifth resin layer 41 can also electrically connect the multiple internal portions 26.

[0324] The in-plane dimension of the first surface 13 of the opening of the resin layer of the first wiring layer 50A, which relates to the electrical path between the internal portion 26 and the first bump 51, is preferably 50 μm or more. For example, the dimensions of the opening 331 of the first resin layer 33 and the opening 371 of the third resin layer 37 are preferably both 50 μm or more. As a result, the resistance on the path between the internal portion 26 and the first bump 51 is reduced. Therefore, sufficient allowable current for the first bump 51 can be achieved.

[0325] like Figure 38 As shown, the second wiring layer 50B may include a second resin layer 34, a fourth resin layer 38, a plurality of second conductive layers 36, and a plurality of fourth conductive layers 40.

[0326] Multiple second conductive layers 36 can be connected to the internal portions 26 through openings 341 in the second resin layer 34. The multiple second conductive layers 36 can be spaced apart from each other in the in-plane direction of the second surface 14. In this case, the multiple internal portions 26 are not electrically connected through the second conductive layers 36.

[0327] Multiple fourth conductive layers 40 can be connected to the second conductive layer 36 through openings 381 in the fourth resin layer 38. The multiple fourth conductive layers 40 can be separated from each other in the in-plane direction of the second surface 14. In this case, the multiple internal portions 26 are not electrically connected through the fourth conductive layers 40.

[0328] Several variations of the above-described embodiments have been described, but of course, multiple variations can also be combined and applied to the above-described embodiments.

[0329] Example

[0330] The embodiments of this disclosure will be further described in detail below, but the embodiments of this disclosure are not limited to the following embodiments as long as they do not depart from its spirit.

[0331] (Example 1-1)

[0332] As substrate 12, a glass substrate with a thickness T0 of 800 μm is prepared. Next, a [missing information - likely a process or structure] is formed on substrate 12. Figure 4 The diagram shows a plurality of through holes 15. Each through hole 15 includes a first end 161 having a first dimension R1, a second end 162 having a second dimension R2, and a smallest portion 163 having a minimum dimension R3. The first end 161, the second end 162, and the smallest portion 163 have circular outlines when viewed from above. The first dimension R1, the second dimension R2, and the minimum dimension R3 are 85 μm, 85 μm, and 50 μm, respectively.

[0333] Next, a substrate 12 is formed Figure 4The diagram shows multiple through electrodes 20 and multiple internal resins 30. Each through electrode 20 includes a copper-plated layer 201 and a seed layer 202. Each through electrode 20 includes one first portion 21, one second portion 22, and four internal portions 26. Each internal portion 26 includes a third portion 23, a fourth portion 24, and a sealing portion 25. The thickness T3 of the third portion 23 and the thickness T4 of the fourth portion 24 are both 20 μm. The distance K1 in the thickness direction of the substrate 12 from the first surface 13 to the first sealing surface 251 of the sealing portion 25, i.e., the first distance K1, is 150 μm. The distance K2 in the thickness direction of the substrate 12 from the second surface 14 to the second sealing surface 252 of the sealing portion 25, i.e., the second distance K2, is 150 μm. The thickness T5 of the sealing portion 25 in the thickness direction of the substrate 12 is 500 μm. The second spacing P2 of the plurality of through holes 15 overlapping with the first part 21 of the through electrode 20 is 100 μm.

[0334] The reliability of the through electrode substrate 10 in Example 1-1 is evaluated.

[0335] In the reliability evaluation, the appearance of the through-electrode substrate 10 is observed after 1000 thermal cycles. Specifically, it is checked whether defects such as cracks have occurred in the appearance of the through-electrode 20 of the through-electrode substrate 10. If defects such as cracks have occurred, the through-electrode substrate 10 is judged as "NG". If no defects such as cracks have occurred, the appearance of the through-electrode substrate 10 is observed after another 1000 thermal cycles. If defects such as cracks have occurred after a total of 2000 thermal cycles, the through-electrode substrate 10 is judged as "Good". If no defects such as cracks have occurred after a total of 2000 thermal cycles, the through-electrode substrate 10 is judged as "Excellent".

[0336] One thermal cycle includes a heating process, a high-temperature holding process, a cooling process, and a low-temperature holding process. The heating process involves changing the ambient temperature of the through-electrode substrate 10 from -55°C to +125°C over 30 minutes. The high-temperature holding process involves maintaining the ambient temperature of the through-electrode substrate 10 at +125°C for 30 minutes. The low-temperature holding process involves maintaining the ambient temperature of the through-electrode substrate 10 at -55°C for 30 minutes.

[0337] In the through-electrode substrate 10 of Example 1-1, defects such as cracks occurred after 1000 thermal cycles. The through-electrode substrate 10 of Example 1-1 was determined to be "NG".

[0338] (Examples 1-2 to 1-9)

[0339] By changing the second spacing P2 of the plurality of through holes 15 from the value in Example 1-1, a through electrode substrate 10 was fabricated. Next, the reliability of the through electrode substrate 10 was evaluated in the same manner as in Example 1-1. The results are shown below. Figure 29 .

[0340] (Example 2-1)

[0341] As substrate 12, a glass substrate with a thickness T0 of 400 μm is prepared. Next, a [missing information - likely a process or structure] is formed on substrate 12. Figure 15 The diagram shows a plurality of through holes 15. Each through hole 15 includes a first end 161 having a first dimension R1, a second end 162 having a second dimension R2, and a smallest portion 163 having a minimum dimension R3. The first end 161, the second end 162, and the smallest portion 163 have circular outlines when viewed from above. The first dimension R1, the second dimension R2, and the minimum dimension R3 are 85 μm, 85 μm, and 70 μm, respectively.

[0342] Next, a substrate 12 is formed Figure 15 The diagram shows multiple through-electrodes 20 and multiple internal resins 30. Each through-electrode 20 includes a copper-plated layer 201 and a seed layer 202. Each through-electrode 20 includes a first portion 21, a second portion 22, and four internal portions 26. Each internal portion 26 extends from a first end 161 to a second end 162 and is located on a wall surface 16. The thickness of each internal portion 26 is 20 μm. The second spacing P2 of the multiple through holes 15 overlapping the first portion 21 of the through-electrode 20 is 100 μm.

[0343] The reliability evaluation of the through-electrode substrate 10 was performed in the same manner as in Example 1-1. The results are shown below. Figure 29 .

[0344] (Examples 2-2~2-9)

[0345] By changing the second spacing P2 of the plurality of through holes 15 from the value in Example 2-1, a through electrode substrate 10 was fabricated. Next, the reliability of the through electrode substrate 10 was evaluated in the same manner as in Example 1-1. The results are shown below. Figure 29 .

[0346] (Example 3-1)

[0347] As substrate 12, a glass substrate with a thickness T0 of 400 μm is prepared. Next, a [missing information - likely a process or structure] is formed on substrate 12. Figure 16The diagram shows a plurality of through holes 15. Each through hole 15 includes a first end 161 having a first dimension R1 and a second end 162 having a second dimension R2. The first end 161 and the second end 162 have a circular outline when viewed from above. The first dimension R1 and the second dimension R2 are 85 μm and 85 μm, respectively.

[0348] Next, a substrate 12 is formed Figure 16 The diagram shows multiple through-electrodes 20 and multiple internal resins 30. Each through-electrode 20 includes a copper-plated layer 201 and a seed layer 202. Each through-electrode 20 includes a first portion 21, a second portion 22, and four internal portions 26. Each internal portion 26 extends from a first end 161 to a second end 162 and is located on a wall surface 16. The thickness of each internal portion 26 is 20 μm. The second spacing P2 of the multiple through holes 15 overlapping the first portion 21 of the through-electrode 20 is 100 μm.

[0349] The reliability evaluation of the through-electrode substrate 10 was performed in the same manner as in Example 1-1. The results are shown below. Figure 29 .

[0350] (Examples 3-2~3-9)

[0351] By changing the second spacing P2 of the plurality of through holes 15 from the value in Example 3-1, a through electrode substrate 10 was fabricated. Next, the reliability of the through electrode substrate 10 was evaluated in the same manner as in Example 1-1. The results are shown below. Figure 29 .

[0352] (Example 4-1)

[0353] As substrate 12, a glass substrate with a thickness T0 of 500 μm is prepared. Next, a [missing information - likely a process or structure] is formed on substrate 12. Figure 17 The diagram shows a plurality of through holes 15. Each through hole 15 includes a first end 161 having a first dimension R1, a second end 162 having a second dimension R2, and a smallest portion 163 having a minimum dimension R3. The first end 161, the second end 162, and the smallest portion 163 have circular outlines when viewed from above. The first dimension R1, the second dimension R2, and the minimum dimension R3 are 85 μm, 85 μm, and 50 μm, respectively.

[0354] Next, a substrate 12 is formed Figure 17The diagram shows multiple through electrodes 20. Each through electrode 20 includes a copper plating layer 201 and a seed layer 202. Each through electrode 20 includes a first portion 21, a second portion 22, and four internal portions 26. Each internal portion 26 occupies the entire space of the through hole 15. The second spacing P2 of the multiple through holes 15 overlapping with the first portion 21 of the through electrode 20 is 100 μm.

[0355] The reliability evaluation of the through-electrode substrate 10 was performed in the same manner as in Example 1-1. The results are shown below. Figure 29 .

[0356] (Examples 4-2~4-9)

[0357] By changing the second spacing P2 of the plurality of through holes 15 from the value in Example 4-1, a through electrode substrate 10 was fabricated. Next, the reliability of the through electrode substrate 10 was evaluated in the same manner as in Example 1-1. The results are shown below. Figure 29 .

[0358] (Example 5-1)

[0359] As substrate 12, a glass substrate with a thickness T0 of 600 μm is prepared. Next, a [missing information - likely a process or structure] is formed on substrate 12. Figure 18 Multiple through holes 15 are shown. Each through hole 15 includes a first end 161 having a first dimension R1 and a second end 162 having a second dimension R2. The first end 161 and the second end 162 have a circular outline when viewed from above. The first dimension R1 and the second dimension R2 are 50 μm and 50 μm, respectively.

[0360] Next, a substrate 12 is formed Figure 18 The diagram shows multiple through electrodes 20. Each through electrode 20 includes a copper plating layer 201 and a seed layer 202. Each through electrode 20 includes a first portion 21, a second portion 22, and four internal portions 26. Each internal portion 26 occupies the entire space of the through hole 15. The second spacing P2 of the multiple through holes 15 overlapping with the first portion 21 of the through electrode 20 is 100 μm.

[0361] The reliability evaluation of the through-electrode substrate 10 was performed in the same manner as in Example 1-1. The results are shown below. Figure 29 .

[0362] (Examples 5-2~5-9)

[0363] By changing the second spacing P2 of the plurality of through holes 15 from the value in Example 5-1, a through electrode substrate 10 was fabricated. Next, the reliability of the through electrode substrate 10 was evaluated in the same manner as in Example 1-1. The results are shown below. Figure 29 .

[0364] exist Figure 4 or Figure 15 In the through electrode 20 shown, the second spacing P2 is preferably 125 μm or more, and more preferably 300 μm or more. Figure 16 In the through electrode 20 shown, the second spacing P2 is preferably 150 μm or more, and more preferably 350 μm or more. Figure 17 In the through electrode 20 shown, the second spacing P2 is preferably 175 μm or more, and more preferably 350 μm or more. Figure 18 In the through electrode 20 shown, the second spacing P2 is preferably 200 μm or more.

[0365] (Example 6)

[0366] A through-electrode substrate 10 is designed, comprising: a filled through-hole consisting of a single through-hole 15 excluding the minimum portion 163; and a copper plate located on the surface of a substrate 12. The substrate 12 contains FR4 and has a thickness T0 of 400 μm. The copper plate has a width of 0.5 mm and a thickness of 18 μm. Next, a simulation of heat dissipation of the through-electrode substrate 10 is performed. In the simulation, the finite element method is used. In the simulation, heat is assumed to be released through convection at the surface of the copper plate. The formula for heat flux is as follows.

[0367] q=h(T) Cu -T air )

[0368] q is heat flux. The unit of heat flux q is W / m³. 2 h is the thermal conductivity during convection. The unit of thermal conductivity h is W / m. 2 •K. T Cu This is the temperature of the copper plate. T air It is the temperature of the air. The value of thermal conductivity h is 373 [W / m]. 2 •K]. This value is calculated based on the heat dissipation characteristics of the wiring substrate as described in JIS C 5012:1993. Specifically, in the test described in JIS C 5012:1993, a copper plate with a width of 0.6 mm and a thickness of 18 μm is placed on the substrate. If a DC current of 1 A flows through the copper plate, a temperature rise of 10 °C occurs. If this test result is applied to the above formula for heat flux, 373 [W / m] is calculated. 2 •K〕This is the value of the thermal conductivity h. Other conditions in the simulation are as follows.

[0369] • Thermal conductivity of copper: 400 [W / m•K]

[0370] • Resistivity of copper: 1.68 × 10⁻⁶ -8 [Ω•m]

[0371] • Thermal conductivity of FR4: 0.3 [W / m•K]

[0372] Based on simulation, the first dimension R1 and the second dimension R2 of the through-electrode substrate 10 in Example 6 were calculated to satisfy the aforementioned current resistance conditions. When the first dimension R1 and the second dimension R2 are 94 μm, the current flowing through the copper plate and filling the via is 0.96 A when the temperature rises to 10 °C. Therefore, it is presumed that the aforementioned current resistance conditions are satisfied when the first dimension R1 and the second dimension R2 are 94 μm or more.

[0373] Even if the first dimension R1 and the second dimension R2 are less than 94μm, it is presumed that the above-mentioned current resistance conditions are met when a multi-hole structure is adopted.

[0374] Based on simulation, the thermal stress generated between the substrate 12 and the filled via was calculated when the first dimension R1 and the second dimension R2 are 94 μm, the current flowing through the copper plate and the filled via is 0.96 A, and the temperature of the through electrode substrate 10 is 260 °C. At the first end 161 of the through hole 15, the thermal stress showed a maximum value of 187 MPa.

[0375] (Example 7)

[0376] The through electrode substrate 10 is designed with: a conformal through hole consisting of a single through hole 15 that does not include the minimum portion 163; and a copper plate located on the surface of the substrate 12.

[0377] Similar to Example 6, based on simulation, the thicknesses of the first dimension R1, the second dimension R2, and the internal portion 26 of the through-electrode substrate 10 in Example 7 were calculated to satisfy the aforementioned current resistance conditions. When the first dimension R1 and the second dimension R2 are 104 μm and the thickness of the internal portion 26 is 30 μm, the current flowing through the copper plate and the conformal via is 0.97 A when the temperature rises to 10°C. Therefore, it is presumed that the aforementioned current resistance conditions are satisfied when the first dimension R1 and the second dimension R2 are 104 μm or more and the thickness of the internal portion 26 is 30 μm or more.

[0378] Even if the first dimension R1 and the second dimension R2 are less than 104 μm and the thickness of the internal portion 26 is less than 30 μm, it is presumed that the above-mentioned current resistance conditions are met when a multi-hole structure is adopted.

[0379] With dimensions R1 and R2 both 104 μm, the thickness of the internal portion 26 30 μm, a current flowing through the copper plate and filling the via 0.97 A, and a temperature of 260 °C for the through electrode substrate 10, the thermal stress generated between the substrate 12 and the conformal via was calculated based on simulation. The maximum thermal stress of 171 MPa was observed at the first end 161 of the via 15.

[0380] (Example 8)

[0381] A through-electrode substrate 10 is designed, comprising: a through-hole structure consisting of a through-hole 15 including a minimum portion 163; and a copper plate located on the surface of a substrate 12. The through-electrode includes: Figure 4 The internal portion 26 is shown.

[0382] Similar to Example 6, based on simulation, the thicknesses of the first dimension R1, the second dimension R2, the minimum dimension R3, and the internal portion 26 of the through-electrode substrate 10 in Example 8 were calculated to satisfy the aforementioned current resistance conditions. When the first dimension R1 and the second dimension R2 are 180 μm, the minimum dimension R3 is 60 μm, and the thicknesses T3 and T4 of the internal portion 26 are 30 μm, the current flowing through the copper plate and the conformal via is 0.96 A when the temperature rises to 10°C. Therefore, it is presumed that the aforementioned current resistance conditions are satisfied when the first dimension R1 and the second dimension R2 are 180 μm or more, the minimum dimension R3 is 60 μm or more, and the thicknesses T3 and T4 of the internal portion 26 are 30 μm or more.

[0383] In the case of a multi-hole structure, even if the first dimension R1 and the second dimension R2 are less than 180μm, the smallest dimension R3 is less than 60μm, and the thicknesses T3 and T4 are less than 30μm, it is presumed that the above-mentioned current resistance conditions are met.

[0384] Based on simulation, the thermal stress generated between the substrate 12 and the through electrode was calculated when the first dimension R1 and the second dimension R2 are 180 μm or more, the minimum dimension R3 is 60 μm or more, the thicknesses T3 and T4 of the internal portion 26 are 30 μm or more, the current flowing through the copper plate and filling the via is 0.96 A, and the temperature of the through electrode substrate 10 is 260 °C. At the first end 161 of the through hole 15, the thermal stress showed a maximum value of 93 MPa.

[0385] The maximum value of thermal stress in Example 8 is approximately half that of the maximum values ​​of thermal stress in Examples 6 and 7. In the example shown in Example 8, since the through hole 15 includes the minimum portion 163, the angles θ1 and θ2 become greater than 90°, which is considered to reduce thermal stress.

[0386] (Example 9)

[0387] A through-electrode substrate 10 is designed, comprising: a through-hole structure consisting of through holes 15 including a minimum portion 163; and a copper plate located on the surface of a substrate 12. One through-electrode 20 includes... Figure 4 The four internal sections 26 shown have a second spacing P2 of 250 μm between the four through holes 15.

[0388] Similar to Example 6, based on simulation, the thicknesses of the first dimension R1, the second dimension R2, the minimum dimension R3, and the internal portion 26 of the through-electrode substrate 10 in Example 9 were calculated to satisfy the aforementioned current resistance conditions. When the first dimension R1 and the second dimension R2 are 70 μm, the minimum dimension R3 is 35 μm, and the thicknesses T3 and T4 of the internal portion 26 are 30 μm, the aforementioned current resistance conditions are satisfied. Therefore, when the through-electrode 20 includes four or more internal portions 26, the first dimension R1 and the second dimension R2 are 70 μm or more, the minimum dimension R3 is 35 μm or more, and the thicknesses T3 and T4 of the internal portion 26 are 30 μm or more, it is presumed that the aforementioned current resistance conditions are satisfied.

[0389] -Explanation of Figure Markers-

[0390] 10 Through-electrode substrate

[0391] 12 substrate

[0392] 13 Page 1

[0393] 14 Page 2

[0394] 15 Through holes

[0395] 16 wall

[0396] 161 First End

[0397] 162 End 2

[0398] 163 Minimum Department

[0399] 20 Through-electrode

[0400] 201 Coating

[0401] 202 Seed Crystal Layer

[0402] 21 Part 1

[0403] 211 Outline

[0404] 212 Opening

[0405] 22 Part 2

[0406] 23 Part 3

[0407] 24 Part 4

[0408] 25. Closed section

[0409] 26. Internal Parts

[0410] 30 Internal Resin

[0411] 31 First internal resin

[0412] 32 Second internal resin

[0413] 33 First resin layer

[0414] 331 Opening

[0415] 34 Second resin layer

[0416] 35 First conductive layer

[0417] 351 Outline

[0418] 36 Second conductive layer

[0419] 37 Third resin layer

[0420] 38 Fourth resin layer

[0421] 39 Third conductive layer

[0422] 40 Fourth conductive layer

[0423] 41 Fifth resin layer

[0424] 50A, 1st wiring layer

[0425] 50B Second Wiring Layer

[0426] 51 1st Bump

[0427] 52 2nd Bump

[0428] 60 components

[0429] 61 terminal

[0430] 70 capacitor

[0431] 81 First resist layer

[0432] 82 Second resist layer.

Claims

1. A through-electrode substrate, comprising: A substrate includes a first surface, a second surface located opposite the first surface, and a plurality of through holes extending from the first surface to the second surface; and Multiple through electrodes extend from the first surface through the through holes to the second surface. Each of the plurality of through electrodes comprises: a plurality of internal portions located inside the plurality of through holes; a first portion located on the first surface and connected to the plurality of internal portions; and a second portion located on the second surface and connected to the plurality of internal portions. The first portion of each of the plurality of through electrodes has a contour that surrounds the plurality of through holes when viewed from above.

2. The through-electrode substrate according to claim 1, wherein, Each of the plurality of through holes comprises: a wall surface, including a first end connected to the first surface, a second end connected to the second surface, and a minimum portion located between the first end and the second end. The minimum size of the through hole in the smallest part is the minimum value of the size of the through hole in the surface direction of the first surface. Each of the plurality of internal portions includes: a closed portion that closes the through hole at least in the smallest portion, a third portion located on the wall between the first portion and the closed portion, and a fourth portion located on the wall between the second portion and the closed portion.

3. The through-electrode substrate according to claim 2, wherein, The closed portion includes a first closing surface and a second closing surface. The first closed surface is the surface facing the closed portion of the first surface. The second closing surface is the surface facing the closing portion of the second surface. The through electrode has: a first distance, which is the maximum value of the distance from the first surface to the first closed surface in the thickness direction of the substrate, and a second distance, which is the maximum value of the distance from the second surface to the second closed surface in the thickness direction of the substrate. The ratio of the first distance to the thickness of the substrate is 0.10 or higher. The ratio of the second distance to the thickness of the substrate is 0.10 or more.

4. The through-electrode substrate according to claim 2, wherein, The through-hole electrode substrate includes: a plurality of internal resins located inside each of the plurality of through holes. The plurality of internal resins respectively include: a first internal resin located inside the third portion and a second internal resin located inside the fourth portion.

5. The through-electrode substrate according to claim 1, wherein, Each of the plurality of through holes comprises: a wall surface, including a first end connected to the first surface and a second end connected to the second surface. The plurality of said internal portions are respectively located on the wall surface from the first end to the second end. The through electrode substrate has a plurality of internal resins located inside the internal portion of the through hole, respectively.

6. The through-electrode substrate according to claim 5, wherein, Each of the plurality of through holes includes a minimum portion located between the first end and the second end. The minimum size is the smallest value of the through hole in the direction of the face with the first face in the smallest part.

7. The through-electrode substrate according to any one of claims 4 to 6, wherein, The first portion of each of the plurality of through electrodes includes a plurality of openings in which the internal resin is located.

8. The through-electrode substrate according to claim 1, wherein, The ratio of the thickness of the internal portion to the thickness of the substrate is 0.80 or more and 1.20 or less.

9. The through-electrode substrate according to any one of claims 1 to 6 and 8, wherein, The through-electrode substrate comprises: A plurality of first conductive layers are respectively connected to the first portions of the plurality of through electrodes; and The first resin layer is located in the thickness direction of the substrate between the first portion of the plurality of through electrodes and the plurality of first conductive layers.

10. The through-electrode substrate according to claim 9, wherein, Each of the first conductive layers has a contour that surrounds the plurality of through holes when viewed from above.

11. The through-electrode substrate according to claim 10, wherein, The through-electrode substrate includes: Multiple third conductive layers are connected to one of the first conductive layers; and The third resin layer is located between one of the first conductive layers and multiple third conductive layers in the thickness direction of the substrate.

12. The through-electrode substrate according to claim 10, wherein, The plurality of through electrodes includes: a first through electrode, and a second through electrode adjacent to the first through electrode in a top view. The first conductive layer connected to the first through electrode extends outward from the contour of the first portion of the first through electrode. The first portion of the second through electrode extends outward from the outline of the first conductive layer connected to the second through electrode. In the thickness direction of the substrate, a portion of the first conductive layer connected to the first through electrode and a portion of the first part of the second through electrode face each other.

13. The through-electrode substrate according to claim 9, wherein, The first resin layer includes an opening of size 4 when viewed from above, located in part of the first conductive layer. The through hole has a first dimension on the first surface. The fourth dimension is larger than the first dimension.

14. A through-electrode substrate, comprising: The substrate includes a first surface, a second surface located on the opposite side of the first surface, and a plurality of through holes extending from the first surface to the second surface; Multiple through electrodes extend from the first surface through the through holes to the second surface; and The first wiring layer, located on the first surface, includes at least one insulating layer and at least one conductive layer. The plurality of through electrodes each comprises a plurality of internal portions located inside the plurality of through holes. The ratio of the thickness of the internal portion to the thickness of the substrate is 0.80 or more and 1.20 or less. The at least one insulating layer includes a first resin layer located on the first surface. The first resin layer includes multiple openings, each of which overlaps with the interior portion when viewed from above. When viewed from above, the first resin layer overlaps with the boundary between the wall of the through hole and the internal portion. The at least one conductive layer comprises: a conductive layer electrically connected to the plurality of the internal portions.

15. The through-electrode substrate according to claim 14, wherein, The at least one conductive layer comprises: a first conductive layer in which the plurality of openings in the first resin layer are connected to the plurality of internal portions. The first conductive layer is the conductive layer that is electrically connected to the plurality of the internal portions.

16. The through-electrode substrate according to claim 14, wherein, The at least one conductive layer comprises: a plurality of first conductive layers respectively connected to the internal portion of the plurality of openings in the first resin layer; and a conductive layer electrically connected to the plurality of first conductive layers.

17. The through-electrode substrate according to any one of claims 1 to 6, 8, and 14 to 16, wherein, The plurality of through electrodes are arranged at a first spacing in the surface direction of the first surface. The plurality of through holes in the plurality of internal portions contained in the through electrode are arranged at a second spacing in the surface direction of the first surface. The ratio of the first spacing to the second spacing is 2.0 or more.

18. The through-electrode substrate according to claim 17, wherein, The ratio of the first spacing to the second spacing is 5.0 or less.

19. The through-electrode substrate according to claim 17, wherein, The through hole has a first dimension on the first surface. The ratio of the second spacing to the first dimension is 1.5 or more.

20. The through-electrode substrate according to claim 19, wherein, The first dimension is greater than 50μm and less than 100μm.

21. A mounting substrate comprising: Through-electrode substrate as described in any one of claims 1-6, 8, and 14-16; and The element is electrically connected to a plurality of the through electrodes of the through electrode substrate.

22. A method for manufacturing a through-electrode substrate, comprising: A process for preparing a substrate comprising a first surface, a second surface located opposite the first surface, and a through hole extending from the first surface to the second surface; and A through-electrode forming process is performed to form a plurality of through electrodes extending from the first surface through the through-hole to the second surface. Each of the plurality of through electrodes comprises: a plurality of internal portions located inside the plurality of through holes; a first portion located on the first surface and connected to the plurality of internal portions; and a second portion located on the second surface and connected to the plurality of internal portions. The first portion of each of the plurality of through electrodes has a contour that surrounds the plurality of through holes when viewed from above.

23. A method for manufacturing a through-electrode substrate, comprising: A process for preparing a substrate comprising a first surface, a second surface located on the opposite side of the first surface, and a through hole extending from the first surface to the second surface; A through-electrode forming process for forming a plurality of through electrodes extending from the first surface through the through-hole to the second surface; and The process of forming a first wiring layer located on the first surface, comprising at least one insulating layer and at least one conductive layer. Each of the plurality of through electrodes comprises a plurality of internal portions located inside the plurality of through holes. The multiple internal portions are filled with through holes, The at least one insulating layer includes a first resin layer located on the first surface. The first resin layer includes multiple openings, each of which overlaps with the interior portion when viewed from above. When viewed from above, the first resin layer overlaps with the boundary between the wall of the through hole and the internal portion. The at least one conductive layer comprises a conductive layer electrically connected to the plurality of the internal portions.

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