Substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, and program

Abstract

The present application provides a technology, having: a processing chamber, which processes multiple substrates; a plasma generation section, which generates plasma in the processing chamber; a measurement section, which measures the light emission intensity of plasma at at least two positions in the region where multiple substrates are held.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, a substrate processing method, a method and procedure for manufacturing a semiconductor device. Background Technology

[0002] As a substrate processing apparatus used in the manufacturing process of semiconductor devices, there is an apparatus configured to activate a processing gas using plasma and process multiple substrates together (for example, see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-92637 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] This disclosure provides a technique for suppressing unevenness in the processing of multiple substrates.

[0008] Methods for solving problems

[0009] According to one aspect of this disclosure, a technology is provided that has:

[0010] The processing room handles multiple substrates;

[0011] A plasma generation unit that generates plasma within the processing chamber; and

[0012] The measuring unit measures the luminescence intensity of plasma at at least two locations in the region where the plurality of substrates are held.

[0013] Invention Effects

[0014] According to one aspect of this disclosure, it is possible to suppress uneven processing of multiple substrates. Attached Figure Description

[0015] Figure 1 This is an explanatory diagram illustrating a schematic structural example of a substrate processing apparatus according to one aspect of the present disclosure, showing the processing furnace portion in longitudinal section.

[0016] Figure 2 This is an explanatory diagram illustrating a schematic structural example of a substrate processing apparatus according to one embodiment of the present disclosure. Figure 1 The AA-line cross section represents the processing furnace section in the diagram.

[0017] Figure 3 This is an explanatory diagram showing an example of the electrode structure of the plasma generation section of a substrate processing apparatus according to one aspect of this disclosure.

[0018] Figure 4 This is an explanatory diagram illustrating other electrode structures of the plasma generation section of a substrate processing apparatus according to one aspect of this disclosure.

[0019] Figure 5 This is an explanatory diagram illustrating an example of the structure of the plasma measurement unit of a substrate processing apparatus according to one embodiment of the present disclosure.

[0020] Figure 6 This is a block diagram illustrating a schematic structural example of a controller for a substrate processing apparatus according to one embodiment of the present disclosure.

[0021] Figure 7 This is a flowchart illustrating a substrate processing procedure according to one aspect of the present disclosure.

[0022] Figure 8 This is an explanatory diagram (1) showing an example of the electrode structure of the plasma generation section of a substrate processing apparatus according to another aspect of the present disclosure. (a) is a perspective view of the entire electrode, and (b) is a cross-sectional view of the main part.

[0023] Figure 9 This is an explanatory diagram (2) showing an example of the electrode structure of the plasma generation section of a substrate processing apparatus according to another aspect of the present disclosure. (a) is a perspective view of the entire electrode, and (b) is a cross-sectional view of the main part. Detailed Implementation

[0024] <One way of this disclosure>

[0025] The present disclosure will now be described with reference to the accompanying drawings. Furthermore, the drawings used in the following description are schematic, and the dimensional relationships and scales of the elements in the drawings may not necessarily correspond to reality. Additionally, the dimensional relationships and scales of the elements in multiple drawings may not be consistent with each other.

[0026] (1) Structure of the substrate processing device

[0027] use Figures 1 to 3 A general structure of a substrate processing apparatus according to one aspect of the present disclosure will be described.

[0028] (Heating device)

[0029] like Figure 1 As shown, the substrate processing apparatus of this method includes a processing furnace 202. This processing furnace 202 is a so-called vertical furnace capable of accommodating multiple substrates in a vertical direction, and has a heater 207 as a heating device (heating mechanism). The heater 207 is cylindrical in shape and is vertically mounted by being supported by a heater base (not shown) that serves as a holding plate.

[0030] (Processing Room)

[0031] Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and is formed into a cylindrical shape that is closed at the top and open at the bottom. Below the reaction tube 203, a manifold (inlet flange) 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS) and is formed into a cylindrical shape that is open at both the top and bottom. The upper end of the manifold 209 engages with the lower end of the reaction tube 203, thus supporting the reaction tube 203. An O-ring 220a is provided between the manifold 209 and the reaction tube 203 as a sealing component. The manifold 209 is supported by the heater base, thereby allowing the reaction tube 203 to be installed vertically. The processing container (reaction vessel) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow portion of the inner cylinder that serves as the processing container. The processing chamber 201 is housed within the reaction tube 203 and is configured to accommodate multiple wafers 200 serving as substrates. Furthermore, the processing container is not limited to the structure described above, and sometimes only the reaction tube 203 is referred to as the processing container.

[0032] (Gas Supply Department)

[0033] Nozzles 249a and 249b are installed inside the processing chamber 201, penetrating the side wall of the manifold 209. Gas supply pipes 232a and 232b are connected to the nozzles 249a and 249b, respectively. Thus, by providing two nozzles 249a and 249b and two gas supply pipes 232a and 232b to the reaction tube 203, various gases can be supplied to the processing chamber 201. Furthermore, when the manifold 209 is not provided and the reaction tube 203 is used solely as a processing container, the nozzles 249a and 249b can also be arranged to penetrate the side wall of the reaction tube 203.

[0034] Mass flow controllers (MFCs) 241a and 241b, serving as flow controllers (flow control units), and valves 243a and 243b, serving as on / off valves, are sequentially installed on gas supply pipes 232a and 232b, starting from the upstream side of the gas flow. Gas supply pipes 232c and 232d, supplying inert gas, are connected to gas supply pipes 232a and 232b, respectively, downstream of valves 243a and 243b. MFCs 241c and 241d, and valves 243c and 243d, are sequentially installed on gas supply pipes 232c and 232d, starting from the upstream side of the gas flow.

[0035] like Figure 2As shown, the nozzle 249a is configured such that it extends upwards from the lower part of the inner wall of the reaction tube 203 along the upper part, towards the stacking direction of the wafers 200, in the space between the inner wall of the reaction tube 203 and the wafer 200. That is, the nozzle 249a is provided along the wafer arrangement region, horizontally surrounding the wafer arrangement region (placement region) where the wafers 200 are arranged (placed). Specifically, the nozzle 249a is provided on the side of the end (peripheral portion) of each wafer 200 being moved into the processing chamber 201, in a direction perpendicular to the surface (flat surface) of the wafer 200.

[0036] A gas supply port 250a is provided on the side of the nozzle 249a. The gas supply port 250a opens toward the center of the reaction tube 203 and can supply gas toward the wafer 200. A plurality of gas supply ports 250a are provided from the bottom to the top of the reaction tube 203, each having the same opening area and the same opening spacing.

[0037] Nozzle 249b is disposed within buffer chamber 237, which serves as a gas dispersion space. For example... Figure 2 As shown, a buffer chamber 237 is provided in a ring-shaped space between the inner wall of the reaction tube 203 and the wafer 200 when viewed from above, and is provided from the lower part to the upper part of the inner wall of the reaction tube 203, along the stacking direction of the wafer 200. That is, in the region of the wafer arrangement region that horizontally surrounds the wafer arrangement region on the side, the buffer chamber 237 is formed by the buffer structure 300 along the wafer arrangement region. Here, the space in the reaction tube 203 divided by the buffer structure 300 in the buffer chamber 237 is referred to as the second buffer chamber. The buffer structure 300 is made of an insulating material such as quartz, and gas supply ports 302, 304, and 306 for supplying gas or the active species described later into the processing chamber 201 are formed on the arc-shaped wall surface of the buffer structure 300.

[0038] like Figure 2 As shown, gas supply ports 302, 304, and 306 are located in the plasma generation region 224a between rod electrodes 269 and 270, the plasma generation region 224b between rod electrodes 270 and 271, and the region between rod electrode 271 and nozzle 249b, respectively. Their walls are positioned opposite each other and open towards the center of the reaction tube 203, enabling gas supply to the wafer 200. Multiple gas supply ports 302, 304, and 306 are provided from the bottom to the top of the reaction tube 203, each having the same opening area and the same opening spacing.

[0039] Nozzle 249b is configured to rise upwards from the lower part of the inner wall of reaction tube 203 toward the stacking direction of wafer 200. That is, nozzle 249b is provided in a region that horizontally surrounds the wafer arrangement region on the side of the wafer arrangement region where wafers 200 are arranged, inside buffer structure 300, in a manner that runs along the wafer arrangement region. Specifically, nozzle 249b is provided on the side of the end of wafer 200 being fed into processing chamber 201, in a direction perpendicular to the surface of wafer 200.

[0040] A gas supply hole 250b is provided on the side of the nozzle 249b. The gas supply hole 250b opens towards a radially formed wall surface that is arc-shaped relative to the buffer structure 300, allowing gas to be supplied towards the wall surface. As a result, the reactive gas is dispersed within the buffer chamber 237 and does not directly blow onto the rod-shaped electrodes 269-271, thus suppressing particle generation. Similar to the gas supply hole 250a, multiple gas supply holes 250b are provided from the bottom to the top of the reaction tube 203.

[0041] A buffer structure 400, with the same structure as the buffer structure 300, is provided on the inner wall of the reaction tube 203. That is, in the region of the wafer alignment region horizontally surrounding the wafer alignment region, another part of the buffer chamber 237 is formed by the buffer structure 400 along the wafer alignment region. Here, the space within the reaction tube 203 divided by the buffer structure 400 in the buffer chamber 237 is referred to as the first buffer chamber. Figure 2 As shown, in top view, the buffer structures 300 and 400, sandwiching the exhaust pipe 231 (described later), are arranged in a line-symmetrical configuration with respect to a straight line passing through the center of the exhaust pipe 231 and the reaction pipe 203. Furthermore, in top view, the nozzle 249a is positioned opposite the exhaust pipe 231, sandwiching the wafer 200. Additionally, nozzles 249b and 249c are positioned within the respective buffer chambers 237 of the buffer structures 300 and 400, away from the exhaust pipe 231.

[0042] The gas supply pipe 232b is split in two, with the nozzle 249b connected to the front end of one side and the nozzle 249c connected to the front end of the other side. The nozzle 249c is disposed within the buffer chamber 237 on the buffer structure 400 side, which serves as a gas dispersion space. Furthermore, in Figure 1 In the diagram, buffer structure 400 overlaps with buffer structure 300, so the diagram is omitted.

[0043] Gas supply ports 402, 404, and 406 are formed on the arc-shaped wall surface of the buffer structure 400. For example... Figure 2As shown, gas supply ports 402, 404, and 406 are located in the plasma generation region 324a between rod electrodes 369 and 370, the plasma generation region 324b between rod electrodes 370 and 371, and the region between rod electrode 371 and nozzle 249c, respectively. Their walls are positioned opposite each other and open towards the center of the reaction tube 203, enabling gas supply to the wafer 200. Multiple gas supply ports 402, 404, and 406 are provided from the bottom to the top of the reaction tube 203, each having the same opening area and the same opening spacing.

[0044] Nozzle 249c is configured to rise upwards from the lower part of the inner wall of reaction tube 203 toward the stacking direction of wafer 200. That is, nozzle 249c is provided in a region that horizontally surrounds the wafer arrangement region on the side of the wafer arrangement region where wafers 200 are arranged, inside buffer structure 400, in a manner that runs along the wafer arrangement region. Specifically, nozzle 249c is provided on the side of the end of wafer 200 being fed into processing chamber 201, in a direction perpendicular to the surface of wafer 200. Gas supply hole 250c is provided on the side of nozzle 249c for supplying gas. Gas supply hole 250c opens toward a wall surface that is formed radially relative to the arc-shaped wall surface of buffer structure 400, allowing gas to be supplied toward the wall surface. As a result, the reactive gas is dispersed within buffer chamber 237 and does not directly blow onto rod electrodes 369-371, thereby suppressing particle generation. Similar to the gas supply port 250a, multiple gas supply ports 250c are provided from the bottom to the top of the reaction tube 203.

[0045] In this method, gas is transported via nozzles 249a, 249b, and 249c arranged within a cylindrical space (annular shape when viewed from above) and two buffer chambers 237, defined by the inner wall of the reaction tube 203 sidewall and the ends of multiple wafers 200 arranged within the reaction tube 203. Gas is then ejected from gas supply holes 250a, 250b, and 250c, and gas supply ports 302, 304, 306, 402, 404, and 406, respectively, opening near the wafers 200, into the space within the reaction tube 203 where the wafers 200 are arranged. Furthermore, the primary flow of gas within the reaction tube 203 is set in a direction parallel to the surface of the wafers 200, i.e., a horizontal direction. By configuring the structure in this way, gas can be supplied uniformly to each wafer 200, thereby improving the uniformity of the film thickness formed on each wafer 200. The gas flowing on the surface of the wafer 200, i.e., the residual gas after the reaction, flows toward the exhaust port, i.e., the exhaust pipe 231 described later. The flow direction of the residual gas is appropriately determined according to the position of the exhaust port and is not limited to the vertical direction.

[0046] A raw material gas containing, for example, silicon (Si) as a specified element is supplied into the processing chamber 201 from the gas supply pipe 232a via MFC 241a, valve 243a, and nozzle 249a.

[0047] Raw material gas refers to raw materials in a gaseous state, such as gas obtained by vaporizing raw materials that are liquid at room temperature and pressure, or raw materials that are gaseous at room temperature and pressure. In this specification, when the term "raw material" is used, it may refer to "liquid raw materials in a liquid state," "raw material gas in a gaseous state," or both.

[0048] Oxygen (O) gas is supplied, for example, from gas supply pipe 232b via MFC 241b, valve 243b, and nozzles 249b and 249c into processing chamber 201 as a reaction gas (reactant, reactant) with a chemical structure different from the raw materials. The O-containing gas acts as an oxidant (oxidizing gas), i.e., an O source. For example, this gas is plasma-excited using a plasma source described later and supplied as an excitation gas.

[0049] Inert gas is supplied to the processing chamber 201 from gas supply pipes 232c and 232d via MFC 241c and 241d, valves 243c and 243d, and nozzles 249a, 249b and 249c, respectively.

[0050] The primary gas supply system, consisting of gas supply pipe 232a, MFC 241a, and valve 243a, serves as the first gas supply system. The secondary gas supply system, consisting of gas supply pipe 232b, MFC 241b, and valve 243b, serves as the reaction gas supply system (reactant supply system). The inert gas supply system, consisting of gas supply pipes 232c and 232d, MFC 241c and 241d, and valves 243c and 243d, serves as the inert gas supply system. The primary gas supply system, reaction gas supply system, and inert gas supply system are collectively referred to as the gas supply system (gas supply unit). Furthermore, in this specification, the primary gases used for substrate processing of wafer 200, such as primary gases and reaction gases, are sometimes collectively referred to as processing gases, and the structures supplying these gases, such as the primary gas supply system and reaction gas supply system, are sometimes collectively referred to as the processing gas supply system (processing gas supply unit).

[0051] (Exhaust section)

[0052] An exhaust pipe 231 is provided in the reaction tube 203 to exhaust the atmosphere inside the processing chamber 201. The exhaust pipe 231 is connected to a vacuum pump 246, which serves as a vacuum exhaust device, via a pressure sensor 245 (pressure detection unit) that detects the pressure inside the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 (pressure adjustment unit). The APC valve 244 is configured such that by opening and closing the valve while the vacuum pump 246 is operating, vacuum exhaust from the processing chamber 201 can be performed and stopped; and by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating, the pressure inside the processing chamber 201 can be adjusted. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be included in the exhaust system. The exhaust pipe 231 is not limited to being provided in the reaction tube 203; it may also be provided in the manifold 209, similar to the nozzles 249a and 249b.

[0053] (Baseboard support)

[0054] like Figure 1 As shown, the crystal boat 217, serving as a substrate support (substrate support portion), is configured to support multiple wafers 200, for example, 25 to 200 wafers 200 arranged horizontally and aligned with each other in the vertical direction in multiple layers, i.e., arranged at intervals. The crystal boat 217 is made of heat-resistant materials such as quartz or SiC. A heat insulation plate 218, made of heat-resistant materials such as quartz or SiC, is supported in multiple layers at the lower part of the crystal boat 217. This structure makes it difficult for heat from the heater 207 to transfer to the sealing cover 219 side. However, this embodiment is not limited to this method. For example, the heat insulation plate 218 may not be provided at the lower part of the crystal boat 217, but instead a heat insulation cylinder made of a cylindrical component of heat-resistant materials such as quartz or SiC may be provided.

[0055] (Peripheral devices)

[0056] A sealing cap 219, serving as a furnace opening cover, is provided below the manifold 209 to airtightly seal the lower opening of the manifold 209. The sealing cap 219 is configured to abut against the lower end of the manifold 209 from the lower vertical direction. The sealing cap 219 is made of a metal such as SUS and is formed in a disc shape. An O-ring 220b, serving as a sealing member, is provided on the upper surface of the sealing cap 219 and abuts against the lower end of the manifold 209.

[0057] A rotation mechanism 267 is provided on the side of the sealing cover 219 opposite to the processing chamber 201, for rotating the crystal boat 217 (described later). The rotation shaft 255 of the rotation mechanism 267 passes through the sealing cover 219 and is connected to the crystal boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the crystal boat 217. The sealing cover 219 is configured to move vertically upwards and downwards via a crystal boat lift 115, which is vertically disposed outside the reaction tube 203 and serves as a lifting mechanism. The crystal boat lift 115 is configured to move the crystal boat 217 in and out of the processing chamber 201 by moving the sealing cover 219 upwards and downwards.

[0058] The crystal boat lift 115 is configured as a transport device (transport mechanism) for moving the crystal boat 217, i.e., the wafer 200, inside and outside the processing chamber 201. Additionally, a gate 219s, serving as a furnace opening cover, is provided below the manifold 209, capable of airtightly sealing the lower opening of the manifold 209 during the descent of the sealing cover 219 by the crystal boat lift 115. The gate 219s is made of, for example, a metal such as SUS, and is formed in a disc shape. An O-ring 220c, serving as a sealing member, is provided on the upper surface of the gate 219s, abutting against the lower end of the manifold 209. The opening and closing actions (lifting, rotating, etc.) of the gate 219s are controlled by the gate opening and closing mechanism 115s.

[0059] like Figure 2 As shown, a temperature sensor 263, serving as a temperature detector, is installed inside the reaction tube 203. The energizing of the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, thereby achieving the desired temperature distribution within the processing chamber 201. The temperature sensor 263, like the nozzles 249a and 249b, is installed along the inner wall of the reaction tube 203.

[0060] (Plasma Generation Unit)

[0061] Next, use Figures 2 to 4 The plasma generation unit will be explained.

[0062] like Figure 2 As shown, the plasma is generated using capacitively coupled plasma (CCP) inside a vacuum partition, i.e., buffer chamber 237, made of quartz or the like, when the reactive gas is supplied.

[0063] In this substrate processing apparatus, within the buffer chamber 237 of the buffer structure 300, three rod-shaped electrodes 269, 270, and 271, made of conductive material and having elongated structures, are arranged from the bottom to the top of the reaction tube 203 along the stacking direction of the wafer 200. The rod-shaped electrodes 269, 270, and 271 are arranged parallel to the nozzle 249b. The rod-shaped electrodes 269, 270, and 271 are protected by electrode protection tubes 275, which cover the rod-shaped electrodes 269, 271, and 270 from top to bottom. The electrode protection tubes 275 are composed of quartz tubes that protect the rod-shaped electrodes 269, 271, and 270 respectively. In this embodiment, the three quartz tubes are separated from each other. Alternatively, the electrode protection tubes can have other shapes, such as a partition shape, so that the rod-shaped electrodes 269, 270, and 271 do not contact each other. Rod-shaped electrodes 269 and 270 are configured such that their front ends are located at the upper part of the electrode protection tube 275, and rod-shaped electrode 271 is configured such that its front end is located at the lower part of the electrode protection tube 275. Rod-shaped electrodes 269 and 270 are of approximately the same length, while the length of rod-shaped electrode 271 is different from that of rod-shaped electrodes 269 and 270. More specifically, the lengths are different relative to the stacking direction of the wafer 200, and rod-shaped electrodes 269 and 270 are longer than rod-shaped electrode 271.

[0064] The rod-shaped electrodes 269 and 271 (the fourth and third application electrodes, respectively) positioned at their ends, are connected to the high-frequency power supply 273 via a matching connector 272 to receive high-frequency power. The rod-shaped electrode 270, serving as a second reference electrode, is connected to and grounded via a ground wire, thus receiving a reference potential. Therefore, the rod-shaped electrodes connected to the high-frequency power supply 273 and the grounded rod-shaped electrode are alternately arranged, with the rod-shaped electrode 270 positioned between the rod-shaped electrodes 269 and 271 connected to the high-frequency power supply 273 serving as a grounded rod-shaped electrode, shared by the rod-shaped electrodes 269 and 271. In other words, the rod-shaped electrodes 269 and 271 function as "power supply electrodes" to which high-frequency power is applied, while the rod-shaped electrode 270 functions as a grounded "ground electrode."

[0065] In other words, the grounded rod electrode 270 is configured to be sandwiched between adjacent rod electrodes 269 and 271 connected to the high-frequency power supply 273, and the rod electrodes 269 and 270 are configured as a pair, and similarly, the rod electrodes 271 and 270 are configured as a pair, thereby generating plasma. That is, the grounded rod electrode 270 is shared by the two adjacent rod electrodes 269 and 271 connected to the high-frequency power supply 273. This reduces the number of reference electrodes. Furthermore, by applying high-frequency (RF) power from the high-frequency power supply 273 to the rod electrodes 269 and 271, plasma is generated in the plasma generation region 224a between the rod electrodes 269 and 270 and the plasma generation region 224b between the rod electrodes 270 and 271.

[0066] The second plasma electrode unit 277 mainly consists of rod-shaped electrodes 269, 270, 271 and electrode protection tube 275 (see reference). Figure 3 (Electrode protection tube 275 is not shown in the figure). In addition, examples of two electrodes, 269 and 271, are given, but there may be one electrode or more than three electrodes.

[0067] Furthermore, within the buffer chamber 237 of the buffer structure 400, three rod-shaped electrodes 369, 370, and 371, made of conductive material and having elongated structures, are arranged from the bottom to the top of the reaction tube 203 along the stacking direction of the wafer 200. The rod-shaped electrodes 369, 370, and 371 are respectively arranged parallel to the nozzle 249c. The rod-shaped electrodes 369, 370, and 371 are protected by being covered from top to bottom by an electrode protection tube 375. The electrode protection tube 375 is composed of quartz tubes that protect the rod-shaped electrodes 369, 371, and 370 respectively. In this embodiment, the three quartz tubes are separated from each other. Alternatively, the electrode protection tube can have other shapes, such as a partition shape, so that the rod-shaped electrodes 369, 370, and 371 do not contact each other. The rod-shaped electrodes 369, 370, and 371 are configured such that their front ends are located at the top of the electrode protection tube 375.

[0068] Rod electrodes 369, 370, and 371 are approximately the same length, and also approximately the same length as rod electrodes 269 and 270. The lengths of rod electrodes 369, 370, and 371 differ from rod electrode 271; more specifically, their lengths differ relative to the stacking direction of wafer 200. Rod electrodes 369, 370, and 371 are longer than rod electrode 271.

[0069] The rod-shaped electrodes 369 and 371, positioned at their two ends as application electrodes (rod-shaped electrode 369 as the first application electrode and rod-shaped electrode 371 as the second application electrode), are connected to the high-frequency power supply 373 via a matching connector 372 to be subjected to high-frequency power. The rod-shaped electrode 370, serving as the first reference electrode, is connected to and grounded as a reference potential, thereby being given a reference potential. Thus, the rod-shaped electrode connected to the high-frequency power supply 373 and the grounded rod-shaped electrode are alternately arranged, with the rod-shaped electrode 370 positioned between the rod-shaped electrodes 369 and 371 connected to the high-frequency power supply 373 serving as a grounded rod-shaped electrode, shared by the rod-shaped electrodes 369 and 371. That is, the rod-shaped electrodes 369 and 371 function as "power supply electrodes" to which high-frequency power is applied, and the rod-shaped electrode 370 functions as a grounded "ground electrode."

[0070] In other words, the grounded rod electrode 370 is configured to be sandwiched between adjacent rod electrodes 369 and 371 connected to the high-frequency power supply 373, and the rod electrodes 369 and 370 are configured as a pair, and similarly, the rod electrodes 371 and 370 are configured as a pair, thereby generating plasma. That is, the grounded rod electrode 370 is shared by the two adjacent rod electrodes 369 and 371 connected to the high-frequency power supply 373. This reduces the number of reference electrodes. Furthermore, by applying high-frequency power from the high-frequency power supply 373 to the rod electrodes 369 and 371, plasma is generated in the plasma generation region 324a between the rod electrodes 369 and 370 and the plasma generation region 324b between the rod electrodes 370 and 371.

[0071] The first plasma electrode unit 377 mainly consists of rod-shaped electrodes 369, 370, and 371, and an electrode protection tube 375 (see reference). Figure 3 (Electrode protection tube 375 is not shown in the figure). In addition, examples of rod-shaped electrodes 369 and 371 have been described, but there can be one electrode or more than three electrodes.

[0072] The plasma generation unit, which serves as a plasma source, is composed of the first plasma electrode unit 377 and the second plasma electrode unit 277 as described above. Matching devices 272 and 372, and high-frequency power supplies 273 and 373 may also be included in the plasma generation unit. As described later, the plasma generation unit functions as a plasma excitation unit (activation mechanism) that excites (activates) gas plasma into a plasma state. That is, plasma is generated within the processing chamber 201 through such a plasma generation unit.

[0073] In this substrate processing apparatus, two buffer structures (buffer structures 300 and 400) with plasma generation sections are provided. Each buffer structure 300 and 400 has a high-frequency power supply 273 and 373 and a matching device 272 and 372, respectively. Each high-frequency power supply 273 and 373 is connected to a controller 121, enabling plasma control of each buffer chamber 237 of the buffer structures 300 and 400. That is, the controller 121 independently controls each high-frequency power supply 273 and 373, thereby allowing individual adjustment of the high-frequency power supplied to each plasma generation section of the buffer structures 300 and 400.

[0074] Furthermore, in this substrate processing apparatus, the lengths of the rod-shaped electrodes 269, 270, 369, 370, and 371 within the reaction tube 203 are approximately equal, while the length of rod-shaped electrode 271 is shorter than the others. That is, at least two power supply electrodes are provided in the plasma generation section, and the lengths of these at least two power supply electrodes are different. Therefore, by utilizing the length differences of the power supply electrodes in each plasma generation section of the buffer structures 300 and 400 and by individually adjusting the high-frequency power supplied to each plasma generation section, the density of the plasma generated within the reaction tube 203 can be individually adjusted on the upper and lower sides of the reaction tube 203.

[0075] Furthermore, the above structural example illustrates a case where the rod-shaped electrodes 369, 370, and 371 of the first plasma electrode unit 377 have approximately the same length as the rod-shaped electrodes 269 and 270 of the second plasma electrode unit 277, but this is not necessarily a limitation. For example, as... Figure 4 As shown, the length of the rod electrode 371 can also be set to be shorter than that of the rod electrodes 369, 370, 269, and 270 but longer than that of the rod electrode 271. The first plasma electrode unit in this structural example is represented by the symbol 377-1. In this way, even with a structure that sets the length of the rod electrode 371-1, the plasma distribution in the vertical direction of the processing chamber 201 can be adjusted.

[0076] That is, if the power electrode lengths of the multiple plasma generation units are different, the plasma distribution in the vertical direction of the processing chamber 201 can be adjusted. Therefore, the electrode structure in the plasma generation unit can also be adjusted as long as it can accommodate the adjustment of the plasma distribution. Figure 3 or Figure 4 Other than the structure.

[0077] (Plasma Measurement Department)

[0078] The substrate processing apparatus of this method includes a plasma measurement unit 500, which serves as a measurement unit and measures the luminescence intensity of the plasma within the reaction tube 203. Hereinafter, using... Figure 5 The plasma measurement unit 500 will be described.

[0079] The plasma measurement unit 500 mainly consists of an optical emission spectrometer (hereinafter referred to as "OES"). The OES 500 is configured to perform various measurements, including measuring the luminescence intensity of the plasma, by performing spectral analysis of the light generated by the plasma emission. The OES 500 is connected to the controller 121 and can notify the controller 121 of the results of various measurements.

[0080] To perform such measurements, the OES500 includes a main body 501 and a prism probe 502 connected by an optical fiber cable 503. The main body 501 includes a detection unit 501a, and the prism probe 502 has a reflective unit 502a near its front end. The reflective unit 502a is configured to reflect light generated by plasma emission, thereby changing the optical axis direction of the plasma light. With this structure, the light generated by plasma emission is detected by the detection unit 501a via the prism probe 502 with its reflective unit 502a and the optical fiber cable 503.

[0081] In such an OES500, at least the prism probe 502 is configured to be located within the reaction tube 203. More specifically, the prism probe 502 is configured to be located within a protective tube 505 disposed within the reaction tube 203.

[0082] The protective tube 505 is configured to penetrate the sealing cap 219 and stand upright along the stacking direction of the wafer 200, facing upwards into the reaction tube 203. The protective tube 505 is formed, for example, from a light-transmitting material such as quartz, into a tubular shape that is open at the lower end and sealed at the upper end. Thus, the space inside the protective tube 505 is isolated from the space inside the reaction tube 203.

[0083] By arranging a prism probe 502 inside a protective tube 505 extending vertically within the reaction tube 203, the reflective portion 502a of the prism probe 502 causes light from the lower side in the vertical direction within the reaction tube 203 to be reflected in the horizontal direction (i.e., in a direction parallel to the surface (flat surface) of each wafer 200 being moved into the processing chamber 201).

[0084] The prism probe 502 is configured to be movable within the protective tube 505, at least along the tube axis (e.g., the vertical direction if the reaction tube 203 extends vertically). For example, the prism probe 502 can be moved using a lifting mechanism (not shown). However, it is not limited to this method and can be moved by other means (e.g., manually). Furthermore, the prism probe 502 is preferably movable not only along the tube axis of the protective tube 505 but also in a rotational direction about the tube axis.

[0085] Thus, if the prism probe 502 can be moved along the tube axis within the protective tube 505, it can move to multiple locations within the protective tube 505 that are at different vertical positions, allowing for the measurement of plasma luminescence intensity at each location. The multiple locations where the prism probe 502 moves are the areas where the multiple wafers 200 are held by the crystal boat 217. That is, by moving the prism probe 502 within the protective tube 505, the OES 500 equipped with this prism probe 502 can measure the luminescence intensity of plasma at at least two locations within the area where the multiple wafers 200 are held. Furthermore, if the prism probe 502 can also be moved in the rotational direction, it is possible to position the prism probe 502 such that its reflective portion 502a faces the area where the wafers 200 are held.

[0086] (Control device)

[0087] Next, use Figure 6 The control device should be described. For example... Figure 6 As shown, the controller 121, serving as a control unit (control device), is configured as a computer having a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the controller 121.

[0088] The storage device 121c is configured such as flash memory or HDD (Hard Disk Drive). The storage device 121c stores, in a readable manner, control programs that control the operation of the substrate processing apparatus, and process flow diagrams that describe the film deposition process or conditions, as described later. The process flow diagram is a combination of processes that enable the controller 121 to execute the various processes (film deposition processes) described later to obtain a predetermined result, and functions as a program. Hereinafter, process flow diagrams, control programs, etc., will be collectively referred to as programs. Furthermore, process flow diagrams will be simply referred to as processes. In this specification, when the term "program" is used, there may be cases where only a process flow diagram is included, cases where only a control program is included, or cases where both are included. RAM 121b is configured as a storage area (working area) for temporarily storing programs and data read by CPU 121a.

[0089] I / O port 121d is connected to the aforementioned MFC241a~241d, valves 243a~243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, matching device 272, high-frequency power supply 273, impedance meter 274, rotating mechanism 267, crystal boat elevator 115, gate opening and closing mechanism 115s, etc.

[0090] CPU 121a is configured to read and execute control programs from storage device 121c, and to read process data from storage device 121c based on input commands from input / output device 122. CPU 121a is configured to perform the following controls according to the read process data: control of rotating mechanism 267; flow rate adjustment of various gases by MFCs 241a-241d; opening and closing of valves 243a-243d; adjustment of high-frequency power supply 273 by impedance measuring device 274 based on impedance monitoring; opening and closing of APC valve 244 and pressure adjustment by APC valve 244 based on pressure sensor 245; starting and stopping of vacuum pump 246; temperature adjustment of heater 207 based on temperature sensor 263; forward and reverse rotation, rotation angle and rotation speed adjustment of crystal boat 217 by rotating mechanism 267; and lifting and lowering of crystal boat 217 by crystal boat lift 115.

[0091] The controller 121 can be configured by installing the aforementioned program stored in an external storage device (e.g., a hard disk, a CD, an MO disk, a USB memory, or a semiconductor memory) 123 onto a computer. The storage device 121c and the external storage device 123 constitute a computer-readable storage medium. Hereinafter, they will also be collectively referred to as storage media. In this specification, when the term "storage medium" is used, there may be cases where only the storage device 121c is included, cases where only the external storage device 123 is included, or cases where both are included. Furthermore, the program may be provided to the computer using a communication unit such as the Internet or a dedicated line, without using the external storage device 123.

[0092] (2) Substrate processing process

[0093] Next, use Figure 7 An example of a process for forming a film on a substrate using the substrate processing apparatus with the above-described structure will be described as a step in the manufacturing process of a semiconductor device. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.

[0094] In this specification, for convenience, it is sometimes indicated as follows. Figure 7 The sequence of film-forming processes is shown. The same descriptions are used in the following descriptions of variations and other embodiments.

[0095] (Raw material gas → Reactant gas) × n

[0096] In this specification, when the term "wafer" is used, it may refer to "the wafer itself" or "a laminate of a wafer and a specified layer, film, etc., formed on its surface." Similarly, when the term "surface of a wafer" is used, it may refer to "the surface of the wafer itself" or "the surface of a specified layer, etc., formed on the wafer." Furthermore, when described as "forming a specified layer on the wafer," it may mean "forming a specified layer directly on the surface of the wafer itself" or "forming a specified layer on top of a layer, etc., formed on the wafer."

[0097] Furthermore, in this specification, the term "substrate" is used synonymously with the term "wafer".

[0098] (Moving in step: S1)

[0099] When multiple wafers 200 are loaded (wafer loading) into the crystal boat 217, the gate 219s is moved by the gate opening and closing mechanism 115s, opening the lower end of the manifold 209 (gate opening). Afterwards, as... Figure 1As shown, a crystal boat 217 supporting multiple wafers 200 is lifted by a crystal boat elevator 115 and moved into the processing chamber 201 (crystal boat loading). In this state, the sealing cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0100] (Pressure and temperature adjustment steps: S2)

[0101] Vacuum pump 246 performs vacuum venting (pressure reduction venting) to bring the interior of processing chamber 201, i.e., the space containing wafer 200, to the desired pressure (vacuum level). The pressure within processing chamber 201 is measured by pressure sensor 245, and the APC valve 244 is controlled based on this measured pressure information. Vacuum pump 246 remains operational at least until the completion of the film deposition step described later.

[0102] Additionally, heating is performed by heater 207 to bring the wafer 200 within processing chamber 201 to the desired temperature. At this time, based on temperature information detected by temperature sensor 263, feedback control is applied to the energizing of heater 207 to achieve the desired temperature distribution within processing chamber 201. Heating of processing chamber 201 by heater 207 continues at least until the completion of the film deposition step described later.

[0103] Next, the rotation of the crystal boat 217 and the wafer 200 by the rotation mechanism 267 begins. The rotation of the crystal boat 217 and the wafer 200 by the rotation mechanism 267 continues at least until the end of the film deposition step described later.

[0104] (Film-forming steps: S3, S4, S5, S6)

[0105] Then, the film-forming step is performed by sequentially executing steps S3, S4, S5, and S6.

[0106] (Raw gas supply steps: S3, S4)

[0107] In step S3, raw material gas is supplied to the wafer 200 in the processing chamber 201.

[0108] Valve 243a is opened, allowing the raw material gas to flow into the gas supply pipe 232a. The flow rate of the raw material gas is adjusted by MFC 241a, and it is supplied into the processing chamber 201 through nozzle 249a from gas supply port 250a, and exhausted from exhaust pipe 231. At this time, raw material gas is supplied to wafer 200. Simultaneously, valve 243c is opened, allowing inert gas to flow into the gas supply pipe 232c. The flow rate of the inert gas is adjusted by MFC 241c, and it is supplied into the processing chamber 201 together with the raw material gas, and exhausted from exhaust pipe 231.

[0109] In addition, to prevent the raw material gas from entering the nozzle 249b, valve 243d is opened to allow the inert gas to flow into the gas supply pipe 232d. The inert gas is supplied to the processing chamber 201 through the gas supply pipe 232d and the nozzle 249b, and is exhausted from the exhaust pipe 231.

[0110] The following conditions are examples of processing conditions in this step:

[0111] Processing temperature: room temperature (25℃) ~ 550℃, preferably 400~500℃

[0112] Processing pressure: 1~4000Pa, preferably 100~1000Pa

[0113] Raw material gas supply flow rate: 0.1~3 slm

[0114] Raw material gas supply time: 1~100 seconds, preferably 1~50 seconds

[0115] Inert gas supply flow rate (per gas supply pipe): 0~10slm.

[0116] Furthermore, the numerical range stated as "25~550℃" in this specification refers to the inclusion of both the lower and upper limits within that range. Therefore, for example, "25~550℃" means "above 25℃ and below 550℃". The same applies to other numerical ranges. Additionally, the processing temperature in this specification refers to the temperature of the wafer 200 or the temperature inside the processing chamber 201, and the processing pressure refers to the pressure inside the processing chamber 201. Furthermore, the gas supply flow rate of 0 slm indicates that the gas is not supplied. These same principles apply in the following descriptions.

[0117] By supplying a raw material gas to the wafer 200 under the above conditions, a first layer is formed on the substrate film on the surface of the wafer 200. For example, when using a silicon-containing (Si) gas as the raw material gas (described later), a Si-containing layer is formed as the first layer.

[0118] After the first layer is formed, valve 243a is closed, stopping the supply of raw material gas to the processing chamber 201. At this time, with APC valve 244 open, vacuum pump 246 is used to ventilate the processing chamber 201, removing any unreacted raw material gas or reaction byproducts that participated in the formation of the Si-containing layer, and other residues remaining in the processing chamber 201 (S4). Additionally, with valves 243c and 243d open, inert gas is supplied to the processing chamber 201. The inert gas serves as a purging gas.

[0119] As a feedstock gas, gases containing Si and halogens, i.e., halosilane gases, can be used. Halogens include chlorine (Cl), fluorine (F), bromine (Br), iodine (I), etc. As a halosilane gas, chlorosilane gases containing Si and Cl can be used, for example.

[0120] More specifically, chlorosilane gases such as monochlorosilane (SiH3Cl), trichlorosilane (SiHCl3), tetrachlorosilane (SiCl4), hexachlorodisilane (Si2Cl6), and octachlorotrisilane (Si3Cl8) can be used as silane feedstock gases. Additionally, tetrafluorosilane (SiF4), tetrabromosilane (SiBr4), and tetraiodosilane (SiI4) can also be used. In other words, various halosilane gases, including chlorosilanes, fluorosilanes, bromosilanes, and iodosilanes, can be used as silane feedstock gases.

[0121] As an inert gas, nitrogen (N2) can be used, and other rare gases such as argon (Ar), helium (He), neon (Ne), and xenon (Xe) can also be used. More than one of these gases can be used as an inert gas. This also applies to the steps described later.

[0122] (Reaction gas supply steps: S5, S6)

[0123] After the raw material gas supply step is completed, the plasma-excited reaction gas is supplied to the wafer 200 in the processing chamber 201 (S5).

[0124] In this step, the opening and closing of valves 243b to 243d are controlled in the same manner as the opening and closing control of valves 243a, 243c, and 243d in step S3. The reaction gas is regulated by MFC 241b and supplied to buffer chamber 237 via nozzles 249b and 249c. At this time, high-frequency power is supplied (applied) to rod electrodes 269, 270, and 271 from high-frequency power supply 273. Additionally, high-frequency power is supplied (applied) to rod electrodes 369, 370, and 371 from high-frequency power supply 373. The reaction gas supplied to each buffer chamber 237 is excited into a plasma state inside processing chamber 201, supplied as an active species to wafer 200, and exhausted from exhaust pipe 231.

[0125] The following conditions are examples of processing conditions in this step:

[0126] Processing temperature: room temperature (25℃) ~ 550℃, preferably 400~500℃

[0127] Processing pressure: 10~300Pa

[0128] Reactant gas supply flow rate: 0.1~10 slm

[0129] Reaction gas supply time: 10~100 seconds, preferably 1~50 seconds

[0130] Inert gas supply flow rate (per gas supply pipe): 0~10 slm

[0131] RF power: 50~1000W

[0132] RF frequency: 13.56MHz or 27MHz.

[0133] By exciting the reactive gas into a plasma state under the above conditions and supplying it to the wafer 200, the first layer formed on the surface of the wafer 200 is modified by the interaction between the reactive gas and the electrically neutral active species generated in the plasma, and the first layer is modified into the second layer.

[0134] When using an oxidizing gas (oxidant) such as oxygen (O) as the reactant gas, O-containing gas is excited into a plasma state to generate O-containing active species, which are then supplied to wafer 200. In this case, the first layer formed on the surface of wafer 200 is oxidized as a modification treatment by the action of the O-containing active species. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon oxide layer (SiO layer) as the second layer.

[0135] Furthermore, when using nitriding gases (nitriding agents) such as nitrogen (N) and hydrogen (H) gases as reacting gases, N and H active species are generated by exciting the N and H gases into a plasma state, and these N and H active species are supplied to the wafer 200. In this case, the first layer formed on the surface of the wafer 200 is nitrided as a modification treatment by the action of the N and H active species. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon nitride layer (SiN layer) as the second layer.

[0136] After the first layer is modified into the second layer, valve 243b is closed to stop the supply of reaction gas. Additionally, the supply of high-frequency power to rod electrodes 269, 271, 369, and 371 is stopped. Then, through the same processing procedure and conditions as in step S4, the reaction gas and reaction byproducts remaining in the processing chamber 201 are removed from the processing chamber 201 (S6). Alternatively, step S6 can be omitted as part of the reaction gas supply step.

[0137] As described above, gases containing O, N, and H can be used as reactant gases. Examples of O-containing gases include oxygen (O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), ozone (O3), hydrogen peroxide (H2O2), water vapor (H2O), ammonium hydroxide (NH4(OH)), carbon monoxide (CO), and carbon dioxide (CO2). Examples of N and H-containing gases include ammonia (NH3), diazepines (N2H2), hydrazine (N2H4), and N3H8, which are hydrogen nitride-based gases. One or more of these gases can be used as reactant gases.

[0138] As an inert gas, various inert gases, such as those exemplified in step S4, can be used.

[0139] (Number of times the regulations are implemented: S7)

[0140] By performing steps S3, S4, S5, and S6 in this order but not simultaneously (i.e., asynchronously) for one cycle, and repeating this cycle a predetermined number of times (n times, where n is an integer greater than or equal to 1), a film with a predetermined composition and thickness can be formed on wafer 200. It is preferable to repeat this cycle multiple times. That is, preferably, the thickness of the second layer formed in each cycle is less than the desired film thickness, and this cycle is repeated multiple times until the film thickness formed by stacking the second layer reaches the desired film thickness. Furthermore, when forming, for example, a Si-containing layer as the first layer and a SiO layer as the second layer, a silicon oxide film (SiO film) is formed. Conversely, when forming, for example, a Si-containing layer as the first layer and a SiN layer as the second layer, a silicon nitride film (SiN film) is formed.

[0141] (Atmospheric pressure recovery step: S8)

[0142] After the above film-forming process is completed, inert gas is supplied into the processing chamber 201 through gas supply pipes 232c and 232d, and exhaust gas is discharged through exhaust pipe 231. Thus, the processing chamber 201 is purged with inert gas, and any remaining reaction gases or other contaminants are removed (inert gas purging). Afterwards, the atmosphere in the processing chamber 201 is replaced with inert gas (inert gas replacement), and the pressure inside the processing chamber 201 is restored to atmospheric pressure (atmospheric pressure restoration: S8).

[0143] (Moving out step: S9)

[0144] Subsequently, the sealing cover 219 is lowered by the crystal boat lift 115, opening the lower end of the manifold 209, and the processed wafer 200, supported by the crystal boat 217, is moved from the lower end of the manifold 209 to the outside of the reaction tube 203 (crystal boat unloading). After the crystal boat is unloaded, the gate 219s is moved, and the lower end opening of the manifold 209 is sealed by the gate 219s via the O-ring 220c (gate closing). After the processed wafer 200 is moved to the outside of the reaction tube 203, it is removed from the crystal boat 217 (wafer unloading). Furthermore, after the wafer is unloaded, an empty crystal boat 217 can be moved into the processing chamber 201.

[0145] (3) Plasma control processing

[0146] Next, use Figures 3 to 5 This section describes the plasma control treatment performed on the process example described above.

[0147] In the reaction gas supply steps (S5, S6) of the above-mentioned film formation steps (S3, S4, S5, S6), the reaction gas excited by plasma is used for processing. Multiple wafers 200, which are loaded into the crystal boat 217 in a multi-layered stacked state, are processed together at this time. Therefore, regarding the plasma generated in the reaction tube 203, if there is a deviation or deflection of plasma density in the vertical direction within the reaction tube 203, the result of processing the multiple wafers 200 is that the film quality in the stacking direction of each wafer 200 may become uneven.

[0148] Therefore, in this type of substrate processing apparatus, plasma control processing is performed as follows. Furthermore, in the following description, the operation of each component constituting the substrate processing apparatus is controlled by the controller 121.

[0149] As part of the plasma control process, firstly, the luminescence intensity of the plasma within reaction tube 203 was measured using an OES500. Specifically, as... Figure 5As shown, a prism probe 502 of an OES 500 is inserted into a protective tube 505, and the reflective portion 502a of the prism probe 502 is positioned to correspond to the area (hereinafter also referred to as the "substrate holding area") in which multiple wafers 200 are held within the reaction tube 203. Then, for one location within the substrate holding area, light generated by plasma emission is reflected by the reflective portion 502a and detected via an optical cable 503 using a detection portion 501a. Spectral analysis is performed using the main body 501 of the OES 500, thereby determining the plasma emission intensity. Afterwards, the prism probe 502 is moved within the protective tube 505, and the plasma emission intensity is similarly measured for another location within the substrate holding area. Preferably, the plasma emission intensity measurement is performed for at least two locations within the substrate holding area, specifically the upper, central, and lower portions of the substrate holding area.

[0150] That is, by configuring the prism probe 502 of the OES500 to move within the protective tube 505, and holding multiple wafers 200 within the crystal boat 217 in the reaction tube 203, the luminescence intensity of the plasma is measured at at least two locations within the substrate holding area of ​​the reaction tube 203. Thus, in cases where there is a deviation or deflection in plasma density in the vertical direction within the reaction tube 203, the measurement results can be used to identify such situations.

[0151] When the luminescence intensity of the plasma is measured at at least two locations in the substrate holding region, the plasma generation section can be controlled based on the measurement results in order to adjust the uniformity of the plasma generated in the substrate holding region.

[0152] Specifically, in Figure 3 or Figure 4 In the structure shown, the high-frequency power supplied by high-frequency power supplies 273 and 373 to the rod-shaped electrodes 269, 271, 369, and 371 (377-1) serving as power supply electrodes in the buffer structures 300 and 400 is adjusted. The high-frequency power is adjusted based on the measurement results of the plasma luminescence intensity. Therefore, the vertical plasma distribution in the substrate holding area within the processing chamber 201 can be adjusted by utilizing the length differences of the rod-shaped electrodes 269, 271, 369, and 371 (377-1).

[0153] For example, if the plasma luminescence intensity is measured at at least two locations within the substrate holding region and the luminescence intensity at the upper part of the substrate holding region is weaker than that at the lower part, the high-frequency power supplies 273 and 373 are controlled such that the high-frequency power supplied from the high-frequency power supply 373 to the rod electrode 371 (377-1) is stronger than the high-frequency power supplied from the high-frequency power supply 273 to the rod electrode 271. As a result, since the rod electrode 371 (377-1) is longer than the rod electrode 271, the density of the plasma generated at the upper part of the substrate holding region can be adjusted to be higher, thereby achieving homogenization of the plasma generated in the substrate holding region.

[0154] That is, at least two rod-shaped electrodes 269, 271, 369, 371 (377-1) serving as power supply electrodes are provided. When the lengths of the at least two rod-shaped electrodes 269, 271, 369, 371 (377-1) are different, the controller 121 controls multiple high-frequency power supplies 273, 373 based on the plasma emission intensity measurement results using the prism probe 502 of the OES500, in order to adjust the high-frequency power supplied from the high-frequency power supplies 273, 373 to each rod-shaped electrode 269, 271, 369, 371 (377-1). As a result, in the plasma generation in the substrate holding region, the measurement results reflecting the plasma emission intensity of the substrate holding region can achieve homogenization of the generated plasma.

[0155] Furthermore, while the example provided illustrates adjusting the high-frequency power supplied from multiple high-frequency power sources 273 and 373, plasma homogenization can also be achieved without relying on such a control method. For instance, even when a single high-frequency power source selectively (e.g., in a time-division manner) supplies high-frequency power to multiple plasma generation units having power electrodes of different lengths, the plasma distribution in the vertical direction of the substrate holding region can be adjusted by utilizing the length difference of the power electrodes, thereby achieving plasma homogenization.

[0156] This means that if power electrodes of different lengths are prepared in advance, the length of the power electrodes to which the high-frequency power is supplied can be adjusted by selectively supplying high-frequency power. The phrase "able to adjust the length of the power electrodes" can include not only selectively supplying high-frequency power to power electrodes of different lengths, but also configuring the front end of the power electrode to be movable in the vertical direction, thereby adjusting the length of the power electrode by moving the power electrode. In either case, the length of the power electrodes can be adjusted based on the plasma emission intensity measurements at at least two locations in the substrate holding region, thereby achieving homogenization of the plasma generated in the substrate holding region.

[0157] The plasma control process described above can be considered to be performed in parallel with the reactive gas supply steps (S5, S6). That is, for the plasma generated in the substrate holding region during the reactive gas supply step (S5), the plasma luminescence intensity is measured using the prism probe 502 of the OES500, and feedback control is performed based on the measurement result to adjust the plasma distribution in the vertical direction in the substrate holding region.

[0158] However, the plasma control processing is not necessarily limited to being performed in parallel with the reactive gas supply steps (S5, S6), and can also be performed as described below. For example, during device maintenance, with multiple wafers 200 held in the reaction tube 203, the plasma emission intensity is measured at at least two locations in the substrate holding region within the reaction tube 203. Then, based on the measurement results, plasma control processing is performed for the subsequent reactive gas supply steps (S5, S6) to achieve homogenization of the plasma generated in the substrate holding region.

[0159] Furthermore, the plasma control process described above exemplifies an adjustment based on the plasma emission intensity measurement results of at least two locations in the substrate holding region to compensate for differences between the locations. However, this approach is not limited to this method, and control processing can also be performed in the manner described below. For example, normal values ​​for the plasma emission intensity of at least two locations in the substrate holding region are predetermined, and each normal value is stored in the storage device 121c of the controller 121. That is, the storage device 121c functions as a storage unit for pre-storing the normal values ​​of the plasma emission intensity of at least two locations. Then, the controller 121 compares the measurement results of the plasma emission intensity of at least two locations in the substrate holding region with the normal values ​​of each location stored in the storage device 121c. If the measured value deviates from the normal value, plasma control processing is performed to bring the measured value closer to the normal value. Even when performing control processing in this manner, by eliminating the deviation between the measured value and the normal value, the homogenization of the plasma generated in the substrate holding region can be achieved.

[0160] (4) Effects of this implementation method

[0161] According to this embodiment, one or more of the following effects are achieved.

[0162] (a) In this embodiment, the luminescence intensity of the plasma at at least two locations in the substrate holding region is measured. Therefore, even if there is a deviation or deflection of plasma density in the vertical direction within the reaction tube 203, this can be identified based on the measurement results of the plasma luminescence intensity. Furthermore, based on such plasma luminescence intensity measurement results, plasma control processing can be performed on the plasma generated in the substrate holding region to achieve plasma homogenization.

[0163] That is, according to this embodiment, when multiple wafers 200 are processed using plasma at the same time, by measuring the plasma luminescence intensity at at least two locations in the substrate holding region, it is possible to suppress uneven processing of each wafer 200.

[0164] (b) In this embodiment, the plasma measurement unit (OES) 500, which measures the luminescence intensity of the plasma, is configured to have a reflective part 502a, which reflects the light in a manner that changes the optical axis direction of the light generated by the plasma luminescence. As a result, even when the crystal boat 217 supports multiple wafers 200 in multiple layers in the vertical direction, the space within the reaction tube 203 can be used effectively and flexibly (i.e., space saving within the reaction tube 203 is achieved), and the plasma luminescence intensity of the region where multiple wafers 200 are held, i.e., the substrate holding region, can be measured.

[0165] (c) In this embodiment, the prism probe 502 of the plasma measurement unit (OES) 500 is configured to be located inside the protective tube 505 disposed within the reaction tube 203. Therefore, the luminescence intensity of the plasma generated in the substrate holding region within the reaction tube 203 can be measured using the prism probe 502 of the OES 500. If the OES 500 can be used in this way, the measurement of plasma luminescence intensity can be performed appropriately and reliably.

[0166] (d) In this embodiment, the prism probe 502 of the OES500 can move along the tube axis (e.g., vertically) within the protective tube 505. Therefore, the plasma luminescence intensity can be measured at at least two locations within the substrate holding region using a single prism probe 502. That is, even when measuring the plasma luminescence intensity at at least two locations within the substrate holding region, the resulting increase in device structure complexity or device size can be suppressed.

[0167] (e) In this embodiment, the plasma generation unit includes rod-shaped electrodes 269, 271, 369, 371 (377-1) serving as power supply electrodes and rod-shaped electrodes 270, 370 serving as ground electrodes. Furthermore, based on the measurement results of the plasma emission intensity at at least two locations in the substrate holding region, the length of the power supply electrodes or the high-frequency power supplied from the high-frequency power source can be adjusted, thereby achieving homogenization of the plasma generated in the substrate holding region.

[0168] Thus, if power supply electrodes and grounding electrodes are used, and plasma homogenization is achieved by adjusting the length of the power supply electrode and adjusting the supplied high-frequency power, it is possible to suppress the need for complex device structures or large-scale devices in order to achieve plasma homogenization.

[0169] In particular, if multiple plasma generation units are provided as in this embodiment, and multiple high-frequency power supplies adjust the high-frequency power individually for each plasma generation unit, the homogenization of plasma within the reaction tube 203 can be easily and reliably achieved.

[0170] (f) As described in this embodiment, if the plasma control process is performed in parallel with the reactive gas supply step, feedback control for plasma homogenization is performed in real time, and the responsiveness of the plasma control process is excellent.

[0171] On the other hand, if plasma control processing is performed by comparing it with the information stored in the storage device 121c, which functions as a storage unit, the processing load on the controller 121, OES500, etc., can be prevented from becoming excessive. Furthermore, by flexibly utilizing the normal values ​​stored in the storage device 121c, the reliability of plasma control processing can be improved.

[0172] <Another way of this disclosure>

[0173] Next, another embodiment of the substrate processing apparatus of this disclosure will be described.

[0174] In one of the above embodiments, the plasma generating unit is provided inside the reaction tube 203 as an example. However, in another embodiment described here, the difference is that the plasma generating unit is provided outside the reaction tube 203. Other structures are the same as in the embodiment described above, therefore, their description is omitted here.

[0175] (Plasma Generation Unit)

[0176] In another substrate processing apparatus described here, multiple plasma generation units are provided outside the reaction tube 203, i.e., outside the processing container (processing chamber 201). More specifically, electrodes 600 constituting one plasma generation unit and electrodes 700 constituting another plasma generation unit are respectively provided outside the reaction tube 203. Then, by applying electricity to the electrodes 600 and 700, the gas can be plasmaized and excited inside the reaction tube 203, i.e., inside the processing container (processing chamber 201), that is, the gas can be excited into a plasma state.

[0177] Specifically, as a plasma generation unit, such as Figure 8 As shown, an electrode 600 and an electrode holder 601 for fixing the electrode 600 are disposed between the heater 207 and the reaction tube 203. The electrode holder 601 is disposed inside the heater 207, the electrode 600 is disposed inside the electrode holder 601, and the reaction tube 203 is disposed inside the electrode 600.

[0178] In addition, as another plasma generation unit, such as Figure 9 As shown, an electrode 700 and an electrode holder 701 for fixing the electrode 700 are disposed between the heater 207 and the reaction tube 203. The electrode holder 701 is disposed inside the heater 207, the electrode 700 is disposed inside the electrode holder 701, and the reaction tube 203 is disposed inside the electrode 700.

[0179] In any configuration, electrodes 600 and 700 and electrode holders 601 and 701 are each arranged in a ring-shaped space (viewed from above) between the inner wall of heater 207 and the outer wall of reaction tube 203, extending from the lower part of the outer wall of reaction tube 203 along the upper part in the arrangement direction of wafer 200. Electrodes 600 and 700 are arranged parallel to nozzles 249a and 249b. Electrodes 600 and 700 and electrode holders 601 and 701 are arranged and configured in a concentric circle with reaction tube 203 and heater 207 (viewed from above), and do not contact heater 207. Electrode holders 601 and 701 are made of insulating material (insulator) and are arranged to cover at least a portion of electrodes 600 and 700 and reaction tube 203. Therefore, electrode holders 601 and 701 can also be referred to as covers (quartz covers, insulating walls, insulating plates) or cross-sectional arc covers (cross-sectional arc bodies, cross-sectional arc walls).

[0180] Multiple electrodes 600 and 700 are respectively provided and fixedly mounted on the inner walls of electrode fixing members 601 and 701. More specifically, protrusions (hooks) 610 and 710 for hooking the electrodes 600 and 700 are provided on the inner wall surfaces of electrode fixing members 601 and 701, and through holes (openings) 605 and 705 are provided on the electrodes 600 and 700 for inserting the protrusions 610 and 710. By hooking the electrodes 600 and 700 onto the protrusions 610 and 710 on the inner wall surfaces of electrode fixing members 601 and 701 through the openings 605 and 705, the electrodes 600 and 700 can be fixed to the electrode fixing members 601 and 701.

[0181] like Figure 8 As shown, electrode 600 includes a first electrode 600-1, a second electrode 600-2, and a zeroth electrode 600-0. The first electrode 600-1 and the second electrode 600-2 are connected to a high-frequency power supply (RF power supply) via a matching adapter and are subjected to arbitrary potentials. The zeroth electrode 600-0 is grounded, becoming a reference potential (0V). That is, the first electrode 600-1 and the second electrode 600-2 function as power supply electrodes, and the zeroth electrode 600-0 functions as a ground electrode. Therefore, if high-frequency power is supplied to the first electrode 600-1, plasma is generated in the region between the first electrode 600-1 and the zeroth electrode 600-0; similarly, if high-frequency power is supplied to the second electrode 600-2, plasma is generated in the region between the second electrode 600-2 and the zeroth electrode 600-0.

[0182] The first electrode 600-1, the second electrode 600-2, and the zeroth electrode 600-0 are each configured as plate-shaped components in the main view, arranged along the vertical direction (vertical direction, direction of the stacked substrate) extending from the reaction tube 203. However, the lengths of the first electrode 600-1 and the second electrode 600-2 in the vertical direction are different. Specifically, their upper ends in the vertical direction are different, and the length of the second electrode 600-2 is shorter than that of the first electrode 600-1. Therefore, by utilizing the difference in the lengths of these power supply electrodes, the plasma distribution in the vertical direction of the processing chamber 201 can be adjusted. That is, the length of the power supply electrode supplied with high-frequency power can also be adjusted among the electrodes 600.

[0183] In addition, such as Figure 9As shown, electrode 700 includes a first electrode 700-1, a second electrode 700-2, and a zeroth electrode 700-0, as well as a third electrode 700-3. The third electrode 700-3 is connected to a high-frequency power supply (RF power supply) via a matching adapter and functions as a power supply electrode. Therefore, if high-frequency power is supplied to the first electrode 700-1, plasma is generated in the region between the first electrode 700-1 and the zeroth electrode 700-0. Similarly, if high-frequency power is supplied to the second electrode 700-2, plasma is generated in the region between the second electrode 700-2 and the zeroth electrode 700-0. Likewise, if high-frequency power is supplied to the third electrode 700-3, plasma is generated in the region between the third electrode 700-3 and the zeroth electrode 700-0.

[0184] The first electrode 700-1, the second electrode 700-2, the third electrode 700-3, and the zeroth electrode 700-0 are each configured as a plate-shaped component in the main view, arranged along the vertical direction (vertical direction, direction of the stacked substrate) extending from the reaction tube 203. However, the lengths of the first electrode 700-1, the second electrode 700-2, and the third electrode 700-3 in the vertical direction are different. Specifically, their upper ends in the vertical direction are different from each other; the second electrode 700-2 is shorter than the first electrode 700-1, and the third electrode 700-3 is shorter than the second electrode 700-2. Therefore, by utilizing the different lengths of these power supply electrodes, the plasma distribution in the vertical direction of the processing chamber 201 can be adjusted more precisely. That is, the length of the power supply electrode supplied with high-frequency power can also be adjusted among the electrodes 700.

[0185] The electrodes 600 and 700 described above constitute a plasma generation unit (plasma excitation unit, plasma activation mechanism) that excites (activates) gas into a plasma state. The electrode holders 601 and 701, a matching device, and an RF power supply can also be included in the plasma generation unit. Through this plasma generation unit, plasma is generated within the processing chamber 201. Then, by performing plasma control processing using the individual electrodes 600 and 700, the generated plasma can be homogenized.

[0186] The substrate processing apparatus according to another method described above can obtain one or more of the effects shown below, in addition to the effects obtained in one of the above methods.

[0187] (g) In another type of substrate processing apparatus, a power supply electrode and a ground electrode may also be used, and the plasma generated in the substrate holding area may be homogenized by adjusting the length of the power supply electrode, adjusting the supplied high-frequency power, etc.

[0188] (h) In one of the above embodiments, a plasma generation unit is provided inside the reaction tube 203, thus enabling direct plasma generation in the substrate holding area. Furthermore, by using rod-shaped electrodes for plasma generation, the directional nature of the plasma generation can be suppressed.

[0189] On the other hand, according to another embodiment of the substrate processing apparatus described above, a plasma generation section is provided outside the reaction tube 203. Therefore, it is easier to simplify the structure inside the reaction tube 203, and it is also possible to suppress particle generation inside the reaction tube 203. This is preferable in terms of adjusting the processing environment inside the reaction tube 203. Furthermore, by using plate-shaped electrodes to form the plasma generation section provided outside the reaction tube 203, it is possible to suppress the enlargement of the structure around the reaction tube 203.

[0190] <Examples of variations, etc.>

[0191] The embodiments of this disclosure have been described in detail above, but this disclosure is not limited to the above embodiments and various changes can be made without departing from its core essence.

[0192] For example, the above embodiment illustrates the case where a film is formed on a substrate using a raw material gas and a reactant gas in a film-forming process performed in a substrate processing apparatus; however, this method is not limited to this. That is, other types of gases can also be used as processing gases for film-forming processes to form other types of thin films. Furthermore, even when using three or more processing gases, this method can be applied as long as they are supplied alternately for film-forming processes.

[0193] Furthermore, in the above embodiments, an example of supplying the reactant gas after supplying the raw materials was described. This disclosure is not limited to this method; the order of supplying the raw materials and reactant gas can also be reversed. That is, the raw materials can also be supplied after the reactant gas. By changing the supply order, the membrane quality and composition ratio of the formed membrane can be varied.

[0194] Furthermore, while film formation was cited as an example of the processing performed by the substrate processing apparatus in the above embodiments, this method is not limited to this. That is, in addition to the film formation processes exemplified in each embodiment, this method can also be applied to film formation processes other than the thin films exemplified in each embodiment. Furthermore, a portion of the structure of a certain embodiment can be replaced with a structure of another embodiment, and a structure of another embodiment can be added to the structure of a certain embodiment. Additionally, other structures can be added, deleted, or replaced for a portion of the structure of each embodiment.

[0195] In the above-described method, an example of forming a film using a batch substrate processing apparatus that processes multiple substrates at a time has been explained. This disclosure is not limited to the above-described method; for example, it can also be appropriately applied when forming a film using a monolithic substrate processing apparatus that processes one or several substrates at a time. Furthermore, in the above-described method, an example of forming a film using a substrate processing apparatus equipped with a hot-wall type furnace has been explained. This disclosure is not limited to the above-described method; it can also be appropriately applied when forming a film using a substrate processing apparatus equipped with a cold-wall type furnace.

[0196] When using these substrate processing apparatuses, each processing can be performed under the same processing procedures and conditions as described above or in the modified examples, and the same effects as described above or in the modified examples can be obtained.

[0197] Furthermore, it is preferable to prepare the processes used in film formation and etching processes separately according to the processing requirements, and store them in the storage device 121c via an electrical communication line or an external storage device 123. Then, when starting various processes, it is preferable that the CPU 121a appropriately selects a suitable process from the multiple processes stored in the storage device 121c according to the processing requirements. As a result, thin films of various types, compositions, qualities, and thicknesses can be formed universally and with good reproducibility using a single substrate processing device. In addition, it can reduce the operator's workload, avoid operational errors, and enable the rapid initiation of various processes.

[0198] Furthermore, the aforementioned process is not limited to the case of new manufacturing; for example, it can also be prepared by modifying an existing process already installed in the substrate processing apparatus. In the case of process modification, the modified process can be installed in the substrate processing apparatus via electrical communication lines or a storage medium recording the process. Alternatively, the existing process already installed in the substrate processing apparatus can be directly modified by operating the input / output device 122 of the existing substrate processing apparatus.

[0199] Furthermore, while the above embodiment describes a substrate processing apparatus, it can be applied to all semiconductor manufacturing apparatuses.

[0200] Symbol Explanation

[0201] 200…wafer, 201…processing chamber, 269, 271, 369, 371, 371-1…rod electrode (power electrode), 270, 370…rod electrode (ground electrode), 273, 373…high frequency power supply, 500…OES (plasma measurement unit), 600, 700…electrode, 600-1, 600-2…electrode (power electrode), 600-0…electrode (ground electrode), 700-1, 700-2, 700-3…electrode (power electrode), 700-0…electrode (ground electrode).

Claims

1. A substrate processing apparatus comprising: The processing room handles multiple substrates; A plasma generation unit that generates plasma within the processing chamber; as well as The measuring unit measures the luminescence intensity of plasma at at least two locations in the region where the plurality of substrates are held.

2. The substrate processing apparatus according to claim 1, wherein, The measuring unit is configured to include a reflective part that reflects light in a manner that alters the optical axis direction of the light generated by plasma emission.

3. The substrate processing apparatus according to claim 1, wherein, The measuring unit is located in the processing chamber.

4. The substrate processing apparatus according to claim 3, wherein, The measuring unit is housed within a protective tube installed in the processing chamber.

5. The substrate processing apparatus according to claim 4, wherein, The measuring unit is capable of moving along the tube axis within the protective tube.

6. The substrate processing apparatus according to claim 1, wherein, The measuring unit consists of a light emission spectrophotometer.

7. The substrate processing apparatus according to claim 1, wherein, The plasma generation unit has a power supply electrode and a grounding electrode.

8. The substrate processing apparatus according to claim 7, wherein, The length of the power electrode can be adjusted based on the measurement results from the measuring unit.

9. The substrate processing apparatus according to claim 7, wherein, The substrate processing apparatus has multiple plasma generation units.

10. The substrate processing apparatus according to claim 9, wherein, The substrate processing apparatus includes multiple high-frequency power supplies that supply high-frequency power to multiple plasma generation units.

11. The substrate processing apparatus according to claim 10, wherein, The power supply electrode disposed in the plasma generation unit is provided with at least two electrodes, and the at least two power supply electrodes have different lengths.

12. The substrate processing apparatus according to claim 11, wherein, The substrate processing apparatus includes a control unit configured to control the plurality of high-frequency power supplies based on the measurement results of the measurement unit, so as to adjust the high-frequency power supplied from the plurality of high-frequency power supplies to the plurality of plasma generation units.

13. The substrate processing apparatus according to claim 9, wherein, The plasma generation unit is located in the processing chamber.

14. The substrate processing apparatus according to claim 13, wherein, The power supply electrode and the grounding electrode are rod-shaped electrodes.

15. The substrate processing apparatus according to claim 9, wherein, The plasma generation unit is located outside the processing chamber.

16. The substrate processing apparatus according to claim 15, wherein, The power supply electrode and the grounding electrode are plate-shaped electrodes.

17. The substrate processing apparatus according to claim 1, wherein, The substrate processing apparatus includes: A storage unit that pre-stores normal values ​​of the luminescence intensity of the plasma at the at least two locations; and The control unit is configured to compare the measurement result measured by the measurement unit with the normal value stored in the storage unit.

18. A substrate processing method comprising the following steps: The process of generating plasma indoors; A process for measuring the luminescence intensity of plasma at at least two locations in a region containing multiple substrates; and The process of processing the multiple substrates.

19. A method for manufacturing a semiconductor device, wherein, A semiconductor device is manufactured using a substrate processed by the substrate processing method of claim 18.

20. A program that causes a substrate processing apparatus to perform the following steps via a computer: The process of generating plasma indoors; A process for measuring the luminescence intensity of plasma at at least two locations in a region containing multiple substrates; and The process of processing the multiple substrates.

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