Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device

Abstract

A manufacturing apparatus (10) of a semiconductor device includes: a stage (32) for placing a substrate (110); a bonding head (40) for bonding a chip (100) to the substrate (110); and a controller (70), the bonding head (40) includes: a bonding tool (42) for holding the chip (100) in a non-contact manner; a suction source (64) for applying a negative pressure to a holding surface (48) of the bonding tool (42) to suction the chip (100); and a vibration source (60) for applying ultrasonic vibrations to the holding surface (48) to restrict movement of the chip (100) relative to the holding surface (48), the controller (70) is configured to ground the chip (100) in a state in which the chip (100) is spaced apart from the holding surface (48).

Description

Technical Field

[0001] This specification discloses a manufacturing apparatus and a method for manufacturing a semiconductor device by bonding a chip to a substrate. Background Technology

[0002] In recent years, in order to further miniaturize and increase the density of semiconductor devices, technologies for holding semiconductor chips in a non-contact manner have been proposed. For example, Patent Document 1 discloses a chip holder that uses ultrasonic compression effect to hold semiconductor chips in a non-contact manner.

[0003] In Patent Document 1, the chip holder is used as a pick-up collet. By configuring the structure as described, chip contamination or damage during chip pick-up can be effectively prevented.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2023-045216 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] Here, typically, the chip picked up by the pick-up chuck is transferred to the bonding tool. The bonding tool then presses the chip received from the pick-up chuck against the substrate for bonding.

[0009] Patent Document 1 did not adequately explore the application of the chip holder technology to the bonding tool. Therefore, this specification discloses a manufacturing apparatus for a semiconductor device and a method for manufacturing a semiconductor device having a bonding tool that holds a chip in a non-contact manner.

[0010] Technical means to solve the problem

[0011] The semiconductor device manufacturing apparatus disclosed in this specification is characterized by comprising: a stage for placing a substrate; a bonding head for bonding a chip to the substrate; and a controller, the bonding head comprising: a bonding tool for holding the chip in a non-contact manner; a suction source for applying negative pressure to the holding surface of the bonding tool to suction the chip; and a vibration source for applying ultrasonic vibration to the holding surface to restrict movement of the chip relative to the holding surface, the controller being configured to ground the chip while the chip is isolated from the holding surface.

[0012] In this case, it may also include a pressure sensor that detects the pressure of the suction path as the suction pressure, and the controller detects the grounding of the chip based on the change of the suction pressure.

[0013] Alternatively, the controller may stop the suction from the suction source when it detects the grounding.

[0014] Alternatively, the controller may be configured to selectively select a first mode and a second mode, wherein in the first mode, the chip is grounded while the chip is separated from the holding surface; in the second mode, the chip is horizontally moved together with the bonding tool while the chip is separated from the holding surface; and in a state where the chip is in contact with the holding surface, the chip is lowered together with the bonding tool, thereby grounding the chip.

[0015] Alternatively, it may also include a pick-up chuck for picking up the chip from a chip supply source, wherein the bonding tool receives the chip from the pick-up chuck in a non-contact manner.

[0016] In this case, the pick-up clip can also hold the chip in a non-contact manner.

[0017] Alternatively, the outer dimensions of the retaining surface may be larger than the outer dimensions of the chip, and a positioning recess with a shape that follows at least a portion of the outer dimensions of the chip may be formed on the retaining surface.

[0018] The method for manufacturing a semiconductor device disclosed in this specification is characterized in that, while a bonding tool holds a chip in a non-contact manner, the chip is moved together with the bonding tool to bond the chip to a substrate placed on a stage; while the bonding tool holds the chip in a non-contact manner, a negative pressure is applied to the holding surface of the bonding tool, and ultrasonic vibration is applied to the holding surface to form a compression film between the holding surface and the chip; and while the chip is separated from the holding surface, the chip is grounded.

[0019] The effects of the invention

[0020] According to the technology disclosed in this specification, the chip is grounded while keeping it isolated from the holding surface, which reduces the load on the chip and effectively prevents chip damage. Attached Figure Description

[0021] [ Figure 1 [] is a schematic diagram showing the structure of the manufacturing apparatus.

[0022] [ Figure 2 [] is a schematic diagram showing the structure of the joint.

[0023] [ Figure 3 [ ] is a bottom view of the joining tool.

[0024] [ Figure 4 [ ] is an image diagram illustrating the function of the positioning recess.

[0025] [ Figure 5 [ ] is a diagram illustrating the function of airflow forming grooves.

[0026] [ Figure 6 [] is a schematic diagram representing the first mode.

[0027] [ Figure 7 [] is a schematic diagram representing the second mode. Detailed Implementation

[0028] Hereinafter, the structure of the semiconductor device manufacturing apparatus 10 will be described with reference to the accompanying drawings. Figure 1 This is a schematic diagram showing the structure of the manufacturing apparatus 10. Additionally, Figure 2 This is a schematic diagram showing the structure of the connector 40. Figure 3 This is a bottom view of the joining tool 42.

[0029] Manufacturing apparatus 10 is an apparatus for manufacturing semiconductor devices by bonding one or more semiconductor chips 100 onto a substrate 110. The manufacturing apparatus 10 includes a chip supply source 12, a pick-up unit 14, and a bonding unit 30. Semiconductor chips 100 attached to a dicing tape 16 are prepared at the chip supply source 12. The pick-up unit 14 includes an upward pusher 20 that pushes the semiconductor chip 100 attached to the dicing tape 16 upward from below, and a pick-up chuck 18 that picks up the pushed-up semiconductor chip 100.

[0030] The semiconductor chip 100 is bonded to the substrate 110 at the bonding surface (i.e., the bonding surface). Figure 1 The thicker portion of the die (the part in the image) is attached to the cutting strip 16 with its orientation upwards. A pick-up collet 18 holds the mating surface. If the pick-up collet 18 receives the semiconductor chip 100 from the cutting strip 16, it rotates 180 degrees around a predetermined axis of rotation. This changes the mating surface from a downward-facing state to an upward-facing state.

[0031] The bonding portion 30 has a stage 32 for placing the substrate 110 and a bonding head 40 for holding and transporting the semiconductor chip 100. For example... Figure 2 As shown, the joint head 40 has a joint tool 42, a vibration source 60, and a suction source 64.

[0032] The bonding tool 42 holds and transports the semiconductor chip 100. The bonding tool 42 is movable in both the horizontal and vertical directions via a moving mechanism (not shown). A holding plate 46 is provided at the end of the bonding tool 42. The bottom surface of the holding plate 46 functions as a holding surface 48 for holding the semiconductor chip 100.

[0033] like Figure 3 As shown, a suction hole 50, an airflow forming groove 54, and a positioning recess 56 are formed on the retaining surface 48. Furthermore, in Figure 3 In the diagram, the obliquely shaded areas represent recesses that do not penetrate the retaining plate 46, while the cross-shaded areas represent holes that penetrate the retaining plate 46. The suction port 50 is fluidly connected to the suction source 64, described later. The suction source 64 applies negative pressure to the suction port 50. The airflow forming groove 54 is a groove connected to the suction port 50. Figure 3 In this structure, the airflow forming groove 54 includes four radially extending lines from the suction port 50 and a rectangular line surrounding the four radially extending lines. The shape of the airflow forming groove 54 can be adapted as long as it is connected to the suction port 50. The positioning recess 56 is a groove independent of the airflow forming groove 54 and is located outside the airflow forming groove 54. The reasons for providing the airflow forming groove 54 and the positioning recess 56 will be described later.

[0034] The vibration source 60 imparts ultrasonic vibration to the holding surface 48. For example, Figure 2 As shown, the vibration source 60 includes an ultrasonic vibration element 62 and an AC power supply 63. The ultrasonic vibration element 62 receives a voltage signal, i.e., a drive signal, to generate longitudinal vibration. The ultrasonic vibration element 62 may be, for example, a lead zirconate titanate (PZT) that vibrates upon receiving an AC voltage. It is a bolt-clamped Langevin type transducer (BLT, or BL transducer) that uses a metal block to clamp the PZT and applies tightening pressure using a screw (bolt). The AC power supply 63 applies an alternating voltage at a frequency equivalent to a predetermined resonant frequency to the ultrasonic vibration element 62. By driving the vibration source 60, a compression film Sf is generated between the holding surface 48 and the semiconductor chip 100, which will be described later.

[0035] The suction source 64 generates negative pressure and may include, for example, an air pump. The suction source 64 is connected to the suction path 52. By driving the suction source 64, negative pressure is applied to the suction hole 50, generating a suction force that adsorbs the semiconductor chip 100 onto the holding surface 48.

[0036] A positioning camera 68 is further provided at the joint 30. The camera 68 captures images from below of the bonding tool 42 holding the semiconductor chip 100. Hereinafter, the images captured by the camera 68 will be referred to as inspection images. The controller 70, described later, analyzes the inspection images and calculates the position and angle of the semiconductor chip 100 relative to the bonding tool 42. Then, based on the calculated position and angle, the movement of the bonding tool 42 is corrected.

[0037] The controller 70 controls the driving of the coupling head 40, etc. For example... Figure 1 As shown, the controller 70 is a computer that physically includes a processor 72 and a memory 74. Furthermore, in Figure 1 In the illustration, controller 70 is shown as a single computer, but controller 70 may also be configured as a combination of physically separate computers.

[0038] like Figure 1 As shown, the bonding tool 42 receives the semiconductor chip 100 from the upward-facing pick-up chuck 18 and holds the side of the semiconductor chip 100 opposite to the bonding surface. Then, the bonding tool 42 moves directly above the designated bonding position and descends toward the substrate 110. The bonding tool 42 then presses the semiconductor chip 100 against the substrate 110 and bonds the semiconductor chip 100 to the substrate 110. A semiconductor device is manufactured by bonding the required number of semiconductor chips 100 onto a single substrate 110.

[0039] Here, the bonding method is not particularly limited. In this example, the semiconductor chip 100 is directly bonded to the substrate 110. Direct bonding is a bonding method in which the semiconductor chip 100 is directly bonded to the substrate 110 without the use of an adhesive. For example, in direct bonding, the chip-side electrode formed on the bonding surface of the semiconductor chip 100 is bonded to the substrate-side electrode formed on the substrate 110. In this case, the electrodes can be fused using heat or bonded at room temperature.

[0040] Furthermore, in this type of direct bonding, it is susceptible to the influence of foreign objects or gaps on the bonding surface. Even the presence of minute foreign objects or gaps can easily lead to bonding defects. Therefore, the bonding tool 42 in this example utilizes the ultrasonic extrusion effect to hold the semiconductor chip 100 in a non-contact manner. This will be explained in detail below.

[0041] When the semiconductor chip 100 is held by the bonding tool 42, the controller 70 drives the suction source 64 to apply negative pressure to the suction hole 50, and drives the vibration source 60 to impart ultrasonic vibration to the holding surface 48. With the holding surface 48 vibrating ultrasonically, when the semiconductor chip 100 is brought close to the holding surface 48, an ultrasonic squeezing effect is generated between the holding surface 48 and the semiconductor chip 100. The ultrasonic squeezing effect has the following effect: when one of two plates facing each other with a tiny gap is vibrated, a higher pressure is generated within the gap due to the viscosity within the gap. When the ultrasonic squeezing effect occurs, an ultrasonic squeezing film Sf is formed between the semiconductor chip 100 and the holding surface 48, hindering contact between them, and a holding force is generated on the surface of the squeezing film Sf on the semiconductor chip 100.

[0042] Here, a holding force (hereinafter referred to as "ultrasonic holding force") generated by the ultrasonic compression effect is generated in two directions: the direction perpendicular to the holding surface 48 and the direction parallel to it (i.e., the surface direction). That is, when the ultrasonic compression effect is generated, a force acts on the semiconductor chip 100, remaining at a predetermined distance from the holding surface 48; in other words, a force in the direction of levitation from the holding surface 48. In addition, when the ultrasonic compression effect is generated, the semiconductor chip 100 wants to remain within the vibrating surface. Therefore, even if the semiconductor chip 100 is temporarily displaced in the surface direction due to an external force, the semiconductor chip 100 moves in the surface direction with its entire body located within the vibrating surface, and wants to return to a state facing the holding surface 48.

[0043] In this example, to assist this ultrasonic holding force, a suction force caused by negative pressure is also generated on the holding surface 48. The controller 70 controls the drive of the vibration source 60 and the suction source 64 so that when the semiconductor chip 100 is lifted from the holding surface 48, the suction force, the ultrasonic holding force and the gravity acting on the semiconductor chip 100 are balanced.

[0044] Furthermore, as described above, when the ultrasonic compression effect is generated, the semiconductor chip 100 is intended to be located within the vibrating surface. Therefore, if the holding surface 48 is made to have approximately the same shape as the semiconductor chip 100, the semiconductor chip 100 will automatically move in the planar direction by means of the ultrasonic compression effect, with its entire body located within the vibrating surface (i.e., in the region inside the outer shape of the holding surface 48). That is, self-alignment of the semiconductor chip 100 in the planar direction is possible.

[0045] However, the holding force in the surface direction caused by the ultrasonic compression effect is not very large. Therefore, depending on the magnitude of the gravity or inertial force acting on the semiconductor chip 100, there are cases where the surface positioning of the semiconductor chip 100 cannot be achieved with sufficient accuracy. Therefore, in this example, in order to further improve the positioning accuracy of the semiconductor chip 100 in the surface direction, the holding surface 48 is made larger than the semiconductor chip 100, and an airflow forming groove 54 and a positioning recess 56 are formed on the holding surface 48. The groove 54 and the recess 56 will be described below.

[0046] like Figure 3As shown, a suction hole 50, an airflow forming groove 54, and a positioning recess 56 are formed on the holding surface 48. The positioning recess 56 has a shape that is substantially the same as the outer shape of the semiconductor chip 100. In this example, the semiconductor chip 100 is a square with one side approximately L1, so the inner periphery of the positioning recess 56 is also a square with one side approximately L1. At least a portion of the positioning recess 56 is a recess that is sufficiently shallow compared to the wall thickness of the holding plate 46, and the remaining portion of the positioning recess 56 is a hole that penetrates the holding plate 46 along the thickness direction.

[0047] Reference Figure 4 The function of this positioning recess 56 will be explained. Figure 4 This is an image illustrating the function of the positioning recess 56. Furthermore, in Figure 4 The airflow forming groove 54 is omitted from the illustration. With the positioning recess 56 formed, the positioning accuracy of the semiconductor chip 100 in the surface direction is improved compared to the case where the positioning recess 56 is not formed. It is speculated that the principle behind this effect is that the amplitude of the ultrasonic vibration changes drastically around the positioning recess 56.

[0048] With the positioning recess 56 formed, the strength of the retaining surface 48 is locally reduced at the location where the positioning recess 56 is formed. When ultrasonic vibration is applied to the retaining surface 48, the outer portion, which is further outward than the positioning recess 56, tends to oscillate around the positioning recess 56. As a result, compared to the inner portion, which is further inward than the positioning recess 56, the vibration amplitude of the outer portion increases more sharply, and the ultrasonic retaining force changes drastically with respect to the positioning recess 56.

[0049] Therefore, as Figure 4 As shown, when one end of the semiconductor chip 100 in the planar direction crosses the positioning recess 56 and is located outside in the planar direction, the balance of the left and right sides of the ultrasonic holding force acting on the semiconductor chip 100 is greatly disrupted. In order to eliminate this imbalance, the semiconductor chip 100 automatically moves inward toward the positioning recess 56. Moreover, as a result, the self-alignment accuracy of the semiconductor chip 100 can be improved when the positioning recess 56 is present, compared to the case without the positioning recess 56.

[0050] Next, the airflow forming groove 54 will be described. As described above, a suction hole 50 is formed at the center of the holding surface 48, and the suction hole 50 is in communication with the suction source 64. (Refer to...) Figure 5 The function of the airflow forming groove 54 will be explained. Figure 5 This is an image illustrating the function of the airflow forming groove 54. Furthermore, in Figure 5 The illustration of the positioning recess 56 is omitted in the text.

[0051] With the airflow forming groove 54 formed, the positioning accuracy of the semiconductor chip 100 in the planar direction is improved compared to the case where the airflow forming groove 54 is not formed. It is speculated that the principle behind this effect is that by forming the airflow forming groove 54, the airflow velocity in the planar direction flowing between the semiconductor chip 100 and the holding surface 48 is increased and stabilized.

[0052] That is, when the semiconductor chip 100 is kept levitated by the ultrasonic squeezing effect, and a suction force generated by the suction source 64 is generated, an airflow in the planar direction and towards the center is generated in the gap between the semiconductor chip 100 and the holding surface 48. Here, without the airflow forming groove 54, the airflow in the planar direction towards the center is slow due to the influence of fluid viscosity and is prone to instability. In addition, the suction force only works locally near the suction hole 50. In this case, even if the semiconductor chip 100 experiences a positional shift in the planar direction, it is difficult to move in the planar direction, making it difficult to self-correct the positional shift.

[0053] On the other hand, such as Figure 5 As shown, with the airflow forming groove 54 formed, the thickness of the gap between the semiconductor chip 100 and the holding surface 48 increases near the airflow forming groove 54, reducing the influence of fluid viscosity on the overall airflow. As a result, the airflow velocity in the surface direction increases, and the airflow in the surface direction stabilizes. Compared to the case without the airflow forming groove 54, in particular, the area near the outer periphery of the semiconductor chip 100 (…) Figure 5 The airflow near region A in the diagram is significantly stabilized. This stable airflow in the planar direction exerts a force on the semiconductor chip 100, causing its center to approach the suction hole 50 (and consequently, the center of the holding surface 48). Furthermore, the semiconductor chip 100 is automatically positioned relative to the holding surface 48. Additionally, by forming the airflow forming groove 54, the peak suction force generated near the suction hole 50 is reduced, allowing the suction force to be dispersed in the planar direction. This makes it easier for the semiconductor chip 100 to move in the planar direction, thus facilitating self-correction of positional deviations in the planar direction.

[0054] As explained above, this example enables automatic positioning, or self-alignment, of the semiconductor chip 100. Furthermore, this further improves the positioning accuracy when bonding the semiconductor chip 100 to the substrate 110.

[0055] Furthermore, in recent years, the miniaturization of semiconductor devices has continued to advance, leading to higher precision requirements in the positioning of the semiconductor chip 100 relative to the substrate 110. Therefore, to meet the required positioning accuracy, the position and angle of the semiconductor chip 100 relative to the bonding tool 42 are detected, and the movement of the bonding tool 42 is corrected based on the detection results. By applying this position correction, the positioning accuracy of the semiconductor chip 100 relative to the substrate 110 can be improved to some extent. However, when the positional offset of the semiconductor chip 100 relative to the bonding tool 42 is large, it is difficult to perform high-precision and rapid positioning correction of the bonding tool 42. For example, consider a situation where a positioning accuracy of 0.1 μm is required, but a positional offset of 100 μm occurs in the initial stage. In this case, it is difficult to meet the required accuracy with a single correction; typically, after a low-precision position correction, a high-precision position correction is required, which takes time to meet the required accuracy. On the other hand, if the initial positional offset is about 1 μm, a high-precision position correction can be performed from the beginning, thus meeting the high accuracy requirement in a short processing time.

[0056] Therefore, when transferring the semiconductor chip 100 from the pick-up chuck 18 to the bonding tool 42, it is desirable that the semiconductor chip 100 be correctly positioned relative to the bonding tool 42. However, with the existing bonding tool 42, it is difficult to receive the semiconductor chip 100 at the appropriate position and angle.

[0057] Here, as described above, the bonding tool 42 in this example has a self-alignment function. Therefore, even if the semiconductor chip 100 is not properly positioned relative to the holding surface 48 immediately after receiving the chip, the semiconductor chip 100 automatically moves to the ideal position through the self-alignment function. As a result, the positional offset of the semiconductor chip 100 relative to the bonding tool 42, and consequently the amount of movement correction of the bonding tool 42, can be minimized. Moreover, by reducing the correction amount, more precise positioning can be performed in a shorter time.

[0058] Next, the bonding process based on this bonding tool 42 will be described. The bonding tool 42 descends toward the substrate 110 while holding the semiconductor chip 100, bonding the semiconductor chip 100 to the substrate 110. In this example, a first mode and a second mode can be selected as the descent operation modes of the bonding tool 42. Figure 6 This is a schematic diagram illustrating the first scenario. Figure 7 This is a schematic diagram illustrating the second mode.

[0059] like Figure 6As shown, when the first mode is selected, the controller 70 grounds the semiconductor chip 100 to the substrate 110 while keeping the semiconductor chip 100 separated from the holding surface 48. Subsequently, the bonding tool 42 is lowered to contact the holding surface 48 with the semiconductor chip 100, and the semiconductor chip 100 is pressed by the bonding tool 42.

[0060] Thus, with the semiconductor chip 100 separated from the holding surface 48, the semiconductor chip 100 is grounded, thereby ensuring that the stress acting on the semiconductor chip 100 during the process before pressing begins is approximately zero. As a result, notches or deformations of the semiconductor chip 100 can be effectively prevented.

[0061] Furthermore, in the first mode, the grounding of the semiconductor chip 100 can also be detected by the change in back pressure of the suction path 52. That is, when the semiconductor chip 100 is grounded, although slightly, the gap between the semiconductor chip 100 and the holding surface 48 narrows. Moreover, due to the narrowing of the gap, the pressure in the suction path 52 decreases. Therefore, a pressure sensor 65 for detecting the pressure in the suction path 52 can also be provided (see reference). Figure 2 The timing of a rapid change in pressure is determined as the grounding timing.

[0062] After grounding is detected, the controller 70 can continue to apply ultrasonic vibrations to the holding surface 48. While ultrasonic vibrations continue to be applied, the compression film Sf between the holding surface 48 and the semiconductor chip 100 functions as a damper. Furthermore, this mitigates the impact when the holding surface 48 contacts the semiconductor chip 100, effectively preventing damage to the semiconductor chip 100. Additionally, upon detecting grounding, the controller 70 can release the negative pressure applied to the suction hole 50 by the suction source 64. This structure effectively prevents the semiconductor chip 100, once grounded on the substrate 110, from floating due to suction force and colliding with the holding surface 48.

[0063] Next, the second mode will be explained. For example... Figure 7 As shown, when the second mode is selected, the controller 70 stops the vibration source 60 before the semiconductor chip 100 is grounded, bringing the semiconductor chip 100 into contact with the holding surface 48. Then, with the semiconductor chip 100 in contact with the holding surface 48, the semiconductor chip 100 is grounded to the substrate 110. In this case, the controller 70 detects the grounding of the semiconductor chip 100 based on the reaction force acting on the bonding tool 42. After detecting the grounding, the controller 70 presses the semiconductor chip 100 with the bonding tool 42.

[0064] For example, Figure 7As shown, this second mode becomes effective when the semiconductor chip 100 is flexed. The flex is corrected by bringing the flexed semiconductor chip 100 into contact with the holding surface 48 before grounding. Moreover, by making the semiconductor chip 100 flat, the semiconductor chip 100 can be properly grounded to the substrate 110.

[0065] The first and second modes can be selected by the user. Alternatively, the controller 70 can selectively select either the first or second mode depending on the state of the semiconductor chip 100. For example, an inspection device 66 can be provided in the manufacturing apparatus 10 to detect the state (e.g., deflection) of the semiconductor chip 100 held by the bonding tool 42, and the first and second modes can be switched based on the detection results. The inspection device 66 may also include, for example, one or more cameras that capture images of the semiconductor chip 100, and detect the state of the semiconductor chip 100 based on the captured images. Alternatively, the inspection device 66 may also include a shape sensor utilizing laser or infrared light.

[0066] Furthermore, the structures described so far are all examples; other structures can be appropriately modified as long as they include the structure described in technical solution 1. For example, the airflow forming groove 54 can also be of other shapes as long as it is connected to the suction hole 50. Alternatively, the airflow forming groove 54 may not be present. In addition, not only the bonding tool 42, but also the pick-up collet 18 can hold the semiconductor chip 100 in a non-contact manner. That is, the pick-up collet 18 can also have a vibration source that imparts ultrasonic vibration to the end face of the pick-up collet 18 and a suction source that imparts negative pressure to the end face, just like the bonding head 40. By adopting the above structure, contamination or damage to the semiconductor chip 100 can be prevented more effectively.

[0067] Explanation of icon numbers

[0068] 10: Manufacturing equipment

[0069] 12: Chip Supply Source

[0070] 14: Pick-up Department

[0071] 16: Cutting strip

[0072] 18: Pick up the collet

[0073] 20: Sales Promotion

[0074] 30: Joint

[0075] 32: Platform

[0076] 40: Connector

[0077] 42: Joining tools

[0078] 46: Holding plate

[0079] 48: Maintain the surface

[0080] 50: Suction hole

[0081] 52: Suction Path

[0082] 54: Airflow Formation Groove

[0083] 56: Positioning recess

[0084] 60: Vibration source

[0085] 62: Ultrasonic vibration element

[0086] 63: AC power supply

[0087] 64: Suction Source

[0088] 65: Pressure sensor

[0089] 66: Inspection device

[0090] 68: Camera

[0091] 70: Controller

[0092] 72: Processor

[0093] 74: Memory

[0094] 100: Semiconductor chip

[0095] 110: Substrate

Claims

1. A semiconductor device manufacturing apparatus, characterized in that... include: A stage is used to hold a substrate. A bonding head is used to bond the chip to the substrate. as well as Controller The joint includes: A bonding tool is used to hold the chip in a non-contact manner; A suction source applies negative pressure to the holding surface of the bonding tool to suction the chip; and A vibration source imparts ultrasonic vibrations to the holding surface, thereby restricting the movement of the chip relative to the holding surface. The controller is configured to ground the chip while keeping the chip isolated from the holding surface.

2. The semiconductor device manufacturing apparatus according to claim 1, characterized in that, It also includes a pressure sensor that detects the pressure along the suction path as the suction pressure. The controller detects the grounding of the chip based on the change in the suction pressure.

3. The semiconductor device manufacturing apparatus according to claim 1 or 2, characterized in that, The controller stops the suction from the suction source when it detects the grounding.

4. The semiconductor device manufacturing apparatus according to claim 1, characterized in that, The controller is configured to selectively choose between a first mode and a second mode. The controller is configured as follows: In the first mode, with the chip separated from the holding surface, the chip is grounded. In the second mode, with the chip separated from the holding surface, the chip is moved horizontally together with the bonding tool, and with the chip in contact with the holding surface, the chip is lowered together with the bonding tool, thereby grounding the chip.

5. The semiconductor device manufacturing apparatus according to claim 1, characterized in that, It also includes a pick-up chuck for picking up the chip from the chip supply source. The bonding tool receives the chip from the pick-up collet in a non-contact manner.

6. The semiconductor device manufacturing apparatus according to claim 5, characterized in that, The pick-up clip holds the chip in a non-contact manner.

7. The semiconductor device manufacturing apparatus according to claim 1, characterized in that, The outer dimensions of the retaining surface are larger than the outer dimensions of the chip. A positioning recess is formed on the retaining surface, the shape of which is at least a portion of the outline of the chip.

8. A method for manufacturing a semiconductor device, characterized in that, With the chip held in a non-contact manner by the bonding tool, the chip is moved together with the bonding tool to bond the chip to a substrate placed on a stage. When the bonding tool holds the chip in a non-contact manner, a negative pressure is applied to the holding surface of the bonding tool, and ultrasonic vibration is applied to the holding surface to form a compression film between the holding surface and the chip. The chip is grounded while it is separated from the holding surface.

Images