脑深部电刺激集成组件
By integrating the pulse generator and electrodes onto the same base, the invasiveness problem in traditional deep brain stimulation technology has been solved, resulting in a smaller implantation aperture and higher implantation stability, reducing surgical risks and complications, and improving surgical efficiency.
CN122399253APending Publication Date: 2026-07-17HANGZHOU NUOWEI MEDICAL TECH CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HANGZHOU NUOWEI MEDICAL TECH CO LTD
- Filing Date
- 2026-06-12
- Publication Date
- 2026-07-17
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Figure CN122399253A_ABST
Abstract
本发明提供了一种脑深部电刺激集成组件，涉及脑部医疗植入器械技术领域。该脑深部电刺激集成组件包括：底座、脉冲发生器和电极；底座设有安装槽和电极植入槽，安装槽与电极植入槽间隔设置；脉冲发生器安装于安装槽内，电极的尾端经导线连接至脉冲发生器，电极的头端经电极植入槽穿过并固定于底座。该集成设计显著减少开颅创伤与手术步骤，避免双窗铣削；通过精准匹配的植入槽实现小孔径穿刺、导向限位与机械锚定，降低皮质损伤及脑脊液漏风险，并提升电极空间稳定性；可兼容多模态电极组合，实现个性化适配，缩短手术时间并提高植入精度一致性。
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