晶圆加工方法及装置、电子设备、存储介质
By determining wafer properties and calculating polishing parameters, the problem of lag in determining polishing pressure and removal rate was solved, improving the accuracy and efficiency of first wafer polishing and resulting in better film thickness uniformity.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HWATSING (BEIJING) TECH CO LTD
- Filing Date
- 2026-01-22
- Publication Date
- 2026-07-17
AI Technical Summary
In the existing technology, the determination of polishing pressure and removal rate in the polishing process of non-metallic thin film wafers is delayed. In particular, the polishing parameters of the first wafer lack accuracy after changing the polishing pad or process, which affects the polishing efficiency.
By determining wafer properties, obtaining reference polishing parameter information, and performing weighted summation based on weight values, suitable polishing parameters, including polishing pressure and removal rate, are calculated. The polishing parameter library is expanded and updated by combining historical polishing parameter items to optimize the polishing process of the first wafer.
This improved the timeliness and accuracy of first wafer polishing, ensured the reliability of polishing parameter data, and enhanced polishing efficiency and film thickness uniformity.
Smart Images
Figure CN122401271A_ABST