一种半导体热处理用高纯度石英器件的热变径成型及其制备方法
By using a dual-mold process with a split closed mold and annealing treatment, the problems of low precision and uneven wall thickness in the hot-difference forming of quartz devices in the existing technology have been solved. This has enabled the forming of quartz devices with high precision, low stress and high cleanliness, meeting the high requirements of semiconductor heat treatment equipment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- DONGHAI COUNTY KAIKAI QUARTZ PROD CO LTD
- Filing Date
- 2026-05-29
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies cannot achieve high-precision, uniform wall thickness, and low stress concentration hot-difference forming of quartz devices, and there is a risk of metal impurity contamination, which cannot meet the requirements of semiconductor heat treatment equipment for high purity and high precision.
The dual-mold process using a split closed mold includes roughing and finishing molds. Local heating and external radial compression are achieved through a rotating and axially fed processing device, combined with annealing and chemical cleaning treatments, to realize the hot-diameter forming of high-purity quartz devices.
The dimensional tolerance of quartz devices was controlled within ±0.1mm, and the wall thickness difference was ≤0.15mm. Stress concentration points were eliminated, the risk of metal impurity contamination was reduced, and the high precision and high cleanliness requirements of semiconductor heat treatment equipment were met.
Smart Images
Figure CN122403751A_ABST