A hole transport layer protective material, perovskite / crystalline silicon stacked solar cell and a preparation method thereof
By introducing a hole transport layer protective material composed of benzoxazole groups and triazine onto SAM, the problem of SAM being susceptible to corrosion by polar solvents was solved, and the interface stability and charge transport performance were improved, thereby enhancing the stability and performance of perovskite/crystalline silicon tandem solar cells.
CN122404299APending Publication Date: 2026-07-17WUHAN TEXTILE UNIV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WUHAN TEXTILE UNIV
- Filing Date
- 2026-04-27
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing SAM hole transport layers in perovskite/crystalline silicon tandem solar cells are susceptible to erosion by polar solvents, leading to interface instability and affecting device performance and consistency.
Method used
A hole transport layer protective material composed of benzocarbazole groups, triazine and benzene rings is introduced onto SAM. The material is dissolved in a non-polar solvent and spin-coated to form a dense protective layer, which blocks the penetration of polar solvents and enhances the interfacial stability.
Benefits of technology
It effectively prevents SAM molecule desorption, improves interface integrity and charge transport performance, and enhances device stability and repeatability.
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Figure CN122404299A_ABST
Abstract
本发明属于太阳能电池技术领域，具体涉及一种空穴传输层保护材料、钙钛矿 / 晶硅叠层太阳能电池及其制备方法。本发明在自组装单分子层（SAM）构成的空穴传输层之上引入一层专用小分子保护层（BCz），以抵御后续钙钛矿溶液沉积过程中极性溶剂对SAM的侵蚀，从而提升界面稳定性与器件性能。该保护层用在宽带隙钙钛矿及其晶硅叠层太阳能电池中，对器件性能及其稳定性具有明显提升作用，有效地解决了现有电池界面稳定性差的问题。
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Citation Information
Patent Citations
Hole transport layer, preparation method thereof and solar cell
CN121038502A