一种BiVO4 / TiC / C-C光电催化材料及其制备方法和应用
By constructing a BiVO4/TiC/CC gradient composite structure, the problems of low separation efficiency of photogenerated electron-hole pairs and fast carrier recombination rate in BiVO4 photoelectrocatalytic materials were solved, achieving high efficiency and stability in photoelectrocatalytic performance, suitable for photoelectrocatalytic water splitting to produce hydrogen.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHAANXI UNIV OF SCI & TECH
- Filing Date
- 2026-03-30
- Publication Date
- 2026-07-17
AI Technical Summary
Existing BiVO4 photoelectrocatalytic materials suffer from problems such as low separation efficiency of photogenerated electron-hole pairs, fast recombination rate of photogenerated carriers, and slow kinetics of surface oxygen evolution reaction, which result in their photoelectro-response current density and stability failing to meet the requirements of practical applications.
By constructing a BiVO4/TiC/CC gradient composite structure, the highly conductive TiC and carbon cloth substrate are used as electron transport channels to optimize the charge transport path. Furthermore, an embedded composite structure with a TiC bottom layer and a BiVO4 surface layer is formed through gradient electrodeposition, which enhances the interfacial bonding force and synergistically regulates the surface electronic structure.
It significantly improves photocurrent density, reduces the overpotential of oxygen evolution reaction, extends carrier lifetime, and enhances the structural stability and mechanical strength of the material, meeting the needs of long-term industrial applications.
Smart Images
Figure CN122406286A_ABST