Method for manufacturing single crystal silicon
By maintaining the pulling speed during the single-crystal silicon pulling process, the problem of decreased oxygen evolution nucleus density caused by dislocations is solved, ensuring the formation of oxygen evolution nuclei in single-crystal silicon and improving device performance.
CN122406360APending Publication Date: 2026-07-17SUMCO CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SUMCO CORP
- Filing Date
- 2018-04-05
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing technologies, when increasing heater output power and pull-up speed to address dislocations in monocrystalline silicon, result in a decrease in oxygen evolution nuclei density in monocrystalline silicon, affecting device performance.
Method used
When dislocations occur during the single-crystal silicon pulling process, the pulling speed is kept constant until the temperature band is formed by oxygen evolution nuclei, ensuring that the pulling is carried out within a temperature range of below 800℃ and above 600℃.
Benefits of technology
Maintaining the oxygen evolution nucleus density ensures the formation of oxygen evolution nuclei within single-crystal silicon, thereby enhancing the device's gettering ability and electrical performance.
✦ Generated by Eureka AI based on patent content.
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Figure CN122406360A_ABST
Abstract
本发明涉及单晶硅的制造方法。本发明提供一种单晶硅（10）的制造方法，其利用提拉法从硅熔液中提拉单晶硅（10）而使其生长，在该方法中，当单晶硅（10）的提拉过程中发生位错时，直至位错化开始位置（101）通过氧析出核形成温度带（TBMD）为止维持提拉速度而进行单晶硅（10）的提拉。
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