一种外延生长设备
By designing a rotating support device and a gas supply component, the rotational ejection and flow rate control of the gas supply section were realized, solving the problems of complex structure of gas supply components and uneven gas flow rate in the prior art, and improving the productivity of epitaxial growth equipment and the substrate deposition quality.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SICENTURY SEMICONDUCTOR TECHNOLOGY (SUZHOU) CO LTD
- Filing Date
- 2026-06-17
- Publication Date
- 2026-07-17
AI Technical Summary
Existing gas supply components are complex in structure, cumbersome to maintain, and expensive. Furthermore, the gas flow rate varies greatly between the center and the edge when epitaxially growing on multiple substrates, which affects the quality and uniformity of epitaxial growth.
Design an epitaxial growth apparatus, including a rotating support device and a gas supply assembly. The gas supply unit can rotate to eject gas. The tray assembly is provided with multiple storage parts to realize the epitaxy of multiple substrates. The gas is uniformly distributed through a mixed gas supply unit and a flow rate control module.
It improved equipment capacity, compensated for the defects of slow central airflow velocity and fast edge airflow velocity, and achieved uniform gas delivery to the substrate growth surface, thereby improving the uniformity of substrate deposition quality and epitaxial growth quality.
Smart Images
Figure CN122406366A_ABST