An epitaxial growth apparatus

Abstract

The application discloses an epitaxial growth device, which comprises a reaction cavity, gas supply parts arranged at axial two ends of the reaction cavity and a rotating support device, the rotating support device comprises a rotating assembly and a support assembly arranged at an output end of the rotating assembly, a tray assembly is arranged on the support assembly, at least two receiving parts are arranged on the tray assembly, the gas supply assembly comprises at least two gas supply parts and at least two driving pieces, the receiving parts are matched with the gas supply parts one by one, the driving pieces are connected with the corresponding gas supply parts, and the driving pieces drive the gas supply parts to rotate, so that the gas of the gas supply parts is sprayed to the growth surface of a substrate in a rotating mode. The growth device can improve the uniformity of the deposition quality of the substrate.

Description

Technical Field

[0001] This application relates to the field of semiconductor deposition technology, and more specifically to an epitaxial growth apparatus. Background Technology

[0002] In semiconductor deposition manufacturing, the gas supply component is a key component of the film deposition equipment, and its performance directly affects the quality and uniformity of the film. However, the existing gas supply component structure has problems such as complex components, cumbersome maintenance process, long time consumption, and high equipment price. These problems limit the integration of the equipment and the flexibility of operation. Moreover, when multiple substrates are epitaxially grown, the gas flow rate of the existing gas supply component differs greatly between the center and the edge of the substrate, resulting in poor uniformity adjustability and affecting the quality of epitaxial growth. Summary of the Invention

[0003] To overcome the above-mentioned shortcomings, the purpose of this application is to provide an epitaxial growth device that can improve the quality of epitaxial growth.

[0004] To achieve the above objectives, this application adopts the following technical solution:

[0005] An epitaxial growth apparatus includes a reaction chamber, a gas supply component at one axial end of the reaction chamber, and a rotating support device at the other end. The rotating support device includes a rotating component and a support component at the output end of the rotating component. A tray component is provided on the support component, and the tray component has at least two receiving parts for placing a substrate. The gas supply component includes at least two gas supply parts and a driving member matching the gas supply parts. The receiving parts and gas supply parts are matched one-to-one. The driving member is connected to the corresponding gas supply part and drives the gas supply part to rotate, so that the gas supplied by the gas supply part is rotated out and flows to the growth surface of the substrate.

[0006] In one embodiment, the gas supply assembly further includes a connecting plate, with at least two gas supply sections spaced apart on the connecting plate. Each gas supply section includes a first mounting section, a first pipeline, and a second pipeline. The first mounting section is located on the connecting plate and communicates with the reaction chamber. The first pipeline is connected to the first mounting section, and one end of the first pipeline extends into the reaction chamber. The first pipeline is used to transport a first gas. The second pipeline is connected to the first mounting section, and one end of the second pipeline extends into the reaction chamber. In the axial direction, the second pipeline includes a first pipe section and a second pipe section that communicate with each other. The first pipe section is located on the outer periphery of the first pipeline and is used to transport a second gas. The second pipe section communicates with the outlet of the first pipeline. A driving member is connected to the first pipeline and / or the second pipeline. Based on the rotation of the second pipeline and / or the first pipeline, the first gas and the second gas are mixed in the second pipe section and then rotated and ejected.

[0007] In one embodiment, a first air outlet is provided on the side surface of the second pipe segment facing away from the first pipe segment;

[0008] Alternatively, the sidewall of the second pipe section is provided with multiple second air outlets arranged circumferentially, and the center line of the second air outlet is inclined relative to both the radial line and the axial line of the second pipe section.

[0009] Alternatively, the sidewall of the second pipe section is provided with multiple air outlet pipes that communicate with the second pipe section, and the multiple air outlet pipes are arranged obliquely along the circumference of the second pipe section, and the whole is radiating outward in a trumpet shape.

[0010] In one embodiment, the cross-sectional width of the second pipe segment is equal to or gradually increases from the direction from the first pipe segment to the second pipe segment.

[0011] In one embodiment, the first gas includes a process gas, and the second gas includes a protective gas;

[0012] Alternatively, the first gas may include a protective gas, and the second gas may include a process gas;

[0013] Alternatively, both the first gas and the second gas include a protective gas, and the first gas and the second gas are the same;

[0014] Alternatively, both the first gas and the second gas may include a protective gas, but the first gas and the second gas may be different.

[0015] In one embodiment, the gas supply unit further includes a first bearing and a second bearing, which are axially spaced within the first mounting portion along the second pipe section, and the second pipe section is disposed within the first bearing and the second bearing.

[0016] The gas supply unit also includes a third bearing, which is located at the connection between the first pipeline and the first mounting unit.

[0017] The gas supply unit also includes a first bearing, a second bearing, and a third bearing. The first bearing and the second bearing are axially spaced within the first mounting part along the second pipe section. The second pipe section is disposed within the first bearing and the second bearing. The third bearing is located at the connection between the first pipe and the first mounting part.

[0018] In one embodiment, the epitaxial growth apparatus further includes a first magnetohydrodynamic seal and a second magnetohydrodynamic seal. The first magnetohydrodynamic seal is located on the side of the first mounting portion closer to the connecting plate and is sleeved on the outer periphery of the second pipeline. The second magnetohydrodynamic seal is located on the side of the first mounting portion away from the connecting plate and is sleeved on the outer periphery of the second pipeline.

[0019] In one embodiment, the gas supply assembly is located on the bottom side of the reaction chamber, and the rotary support device is located on the top side of the reaction chamber.

[0020] Alternatively, the gas supply assembly is located on the top side of the reaction chamber, and the rotating support device is located on the bottom side of the reaction chamber.

[0021] In one embodiment, the epitaxial device further includes a gas supply system, which includes a first flow rate control module and a second flow rate control module. The first flow rate control module is used to control the gas flow rate entering the first pipeline, and the second flow rate control module is used to control the gas flow rate entering the second pipeline segment.

[0022] In one embodiment, the driving member includes a driving part fixedly disposed on the outer periphery of the first mounting part and a transmission part connecting the driving part and the first pipeline or the second pipeline, wherein the driving part drives the first pipeline or the second pipeline to rotate through the transmission part.

[0023] Alternatively, the driving component includes a first driving part, a second driving part, a first transmission part, and a second transmission part. The first transmission part connects the first driving part and the first pipeline, and the first driving part drives the first pipeline to rotate in a first direction. The second transmission part connects the second driving part and the second pipeline, and the second driving part drives the second pipeline to rotate in a second direction, the first direction being opposite to the second direction.

[0024] Beneficial effects

[0025] The epitaxial growth equipment provided in this application has at least two receiving sections for placing substrates on the tray assembly, and each receiving section corresponds to a gas supply section. This design enables the simultaneous epitaxial growth of multiple substrates, thereby increasing the equipment's productivity. It also compensates for the defects caused by the substrates on the tray assembly not being able to rotate and the slow airflow velocity at the center and fast airflow velocity at the edge of the spray assembly's air intake method. In addition, the gas supply section in this application is rotatable, and the gas in the gas supply section can be rotatably sprayed onto the growth surface of the substrate. This allows the gas sprayed from the gas supply section to reach the growth surface of the substrate evenly, thereby improving the uniformity of substrate deposition quality (such as thickness and doping). Attached Figure Description

[0026] The accompanying drawings are provided to illustrate the technical solutions of this disclosure and form part of the specification. They are used together with the embodiments of this disclosure to explain the technical solutions of this disclosure and do not constitute a limitation on the technical solutions of this disclosure. The shapes and sizes of the components in the drawings do not reflect actual proportions and are only intended to illustrate the content of this application.

[0027] Figure 1 Schematic diagram of the epitaxial growth apparatus provided in the embodiments of this application Figure 1 ;

[0028] Figure 2 A bottom view of the gas supply assembly provided in an embodiment of this application;

[0029] Figure 3 A schematic diagram of the gas supply section structure provided in the embodiments of this application. Figure 1 ;

[0030] Figure 4 A schematic diagram of the gas supply section structure provided in the embodiments of this application. Figure 2 ;

[0031] Figure 5 Schematic diagram of the first and second pipeline structures provided in the embodiments of this application Figure 1 ;

[0032] Figure 6 Schematic diagram of the first and second pipeline structures provided in the embodiments of this application Figure 2 ;

[0033] Figure 7 for Figure 6 A cross-sectional schematic diagram;

[0034] Figure 8 A schematic diagram of the gas supply unit provided in the embodiments of this application. Figure 3 ;

[0035] Figure 9 for Figure 8 A cross-sectional schematic diagram;

[0036] Figure 10 This is a schematic diagram of the structure of the rotating support device provided in the embodiments of this application;

[0037] Figure 11 Schematic diagram of the epitaxial growth apparatus provided in the embodiments of this application Figure 2 . Detailed Implementation

[0038] The above-described solution will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of this application. The implementation conditions used in the embodiments may be further adjusted according to the conditions of specific manufacturers, and the implementation conditions not specified are generally those in routine experiments.

[0039] Unless otherwise defined, the technical or scientific terms used in the embodiments of this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the element or object listed following the word and its equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. In this document, "electrical connection" includes the situation where constituent elements are connected together by an element having some electrical function. There is no particular limitation on the "electrically functioning element," as long as it enables the transmission and reception of electrical signals between the connected constituent elements. An "electrically functioning element" can be, for example, an electrode or wiring, a switching element such as a transistor, or other functional elements such as a resistor, inductor, or capacitor. "Up," "down," "left," and "right" are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0040] In this application, the terms "upper," "lower," "inner," "middle," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0041] This application discloses an epitaxial growth apparatus, which includes a reaction chamber, gas supply units and a rotating support device disposed at both ends of the reaction chamber along its axial direction. The rotating support device includes a rotating component and a support component disposed at the output end of the rotating component. A tray component is disposed on the support component, and at least two receiving parts are disposed on the tray component. The gas supply component includes at least two gas supply units and matching driving components. The number of receiving parts corresponds to the number of gas supply units. The driving components are connected to the corresponding gas supply units and drive the gas supply units to rotate, so that the gas supplied by the gas supply units rotates and is ejected and flows to the growth surface of the substrate. In this application, the tray assembly is provided with at least two receiving sections for placing substrates, and each receiving section corresponds to a gas supply section. This design enables the simultaneous epitaxial growth of multiple substrates, thereby increasing equipment productivity and compensating for the defects caused by the inability of the substrates on the tray assembly to rotate and the slow airflow velocity at the center and fast airflow velocity at the edge of the spray assembly. At the same time, the gas supply section in this application is rotatably configured, and the gas in the gas supply section can be rotatably sprayed out to the growth surface of the substrate. This allows the gas sprayed out by the gas supply section to reach the growth surface of the substrate evenly (precisely supplying the gas required for epitaxial growth, improving gas utilization, and reducing losses), thereby improving the uniformity of substrate deposition quality (such as thickness and doping).

[0042] Next, combine Figures 1-11 The epitaxial growth apparatus provided in this application embodiment includes a reaction chamber 100, a gas supply assembly 200, and a rotating support device 300. The reaction chamber 100 is cylindrical. The gas supply assembly 200 is disposed at one axial end of the reaction chamber 100, and the rotating support device 300 is disposed at the other axial end of the reaction chamber 100. The gas supply assembly 200 is connected to a gas supply system (not shown) through a pipeline and is used to supply process gas and / or protective gas to the growth surface of the substrate to enable epitaxial growth of the substrate. The rotating support device 300 is used to support the substrate and the tray assembly 90 and to drive the substrate and the tray assembly 90 to rotate synchronously.

[0043] Exemplarily, the gas supply assembly 200 is located on the top side of the reaction chamber 100, and the rotating support device 300 is disposed opposite to the gas supply assembly 200 and located on the bottom side of the reaction chamber 100; or, the gas supply assembly 200 is located on the bottom side of the reaction chamber 100, and the rotating support device 300 is disposed opposite to the gas supply assembly 200 and located on the top side of the reaction chamber 100. Preferably, in this application, the gas supply assembly 200 is disposed on the bottom side of the reaction chamber 100, and the rotating support device 300 is located on the top side of the reaction chamber 100, that is, in the Z direction (height direction), the rotating support device 300 and the tray assembly 90 are located above the gas supply assembly 200, and the growth surface of the substrate placed on it faces the gas supply assembly 200 (i.e., the surface used for growing the epitaxial layer faces the gas supply assembly 200). During epitaxial growth, the gas supplied by the gas supply component 200 rises from the lower side of the substrate, is heated, reaches the substrate surface, and grows an epitaxial layer on the substrate surface. This avoids particles falling onto the substrate surface, greatly reduces particle generation, and improves the yield of epitaxial growth. At the same time, this structure can reduce the pre-reaction of process gases at the gas supply component 200.

[0044] The following description will take the example of a gas supply assembly 200 located at the bottom of the reaction chamber 100 and a rotary support device 300 located at the top of the reaction chamber 100.

[0045] A top plate 120 is provided on the top side of the reaction chamber 100. The top plate 120 has a hollow hole in the middle. The rotating support device 300 includes a rotating component 310 and a support component 320 provided at the output end of the rotating component 310. The rotating component 310 is located on the side of the top plate 120 away from the bottom plate 110. The output end of the rotating component 310 extends through the top plate 120 (hollow hole) into the reaction chamber 100 and is connected to the support component 320. A tray component 90 is provided on the support component 320. The tray component 90 is provided with at least two storage parts for placing substrates. A bottom plate 110 is provided on the bottom side of the reaction chamber 100, opposite to the top plate 120. The bottom plate 110 has a hollowed-out center. A gas supply assembly 200 is provided on the side of the bottom plate 110 away from the reaction chamber 100. The gas supply assembly 200 includes a connecting plate 210, at least two gas supply sections 220, and a driving member 40 that matches the gas supply sections 220. The gas supply sections 220 are disposed on the connecting plate 210 and extend through the connecting plate 210 into the reaction chamber 100. The driving member 40 is connected to the corresponding gas supply section 220 and is used to drive the gas supply section 220 to rotate, so that the gas in the gas supply section 220 is rotated and ejected to the growth surface of the substrate. In this application, the tray assembly is provided with at least two receiving sections for placing substrates, and each receiving section corresponds to a gas supply section. This design enables the simultaneous epitaxy of multiple substrates, thereby increasing equipment productivity and compensating for the defects caused by the inability of the substrates on the tray assembly to rotate and the slow airflow velocity at the center and fast airflow velocity at the edge of the single spray assembly. At the same time, the gas supply section in this embodiment is rotatably arranged, and the gas in the gas supply section can be rotated and sprayed out and flow to the growth surface of the substrate (precisely providing gas quantity and improving utilization efficiency). This allows the gas sprayed out by the gas supply section to reach the growth surface of the substrate evenly, thereby improving the uniformity of substrate deposition quality (such as thickness and doping).

[0046] In one example, the tray assembly 90 is provided with two or more storage sections. The center of the combination of multiple storage sections is located on the central axis of the support cylinder 80 in the support assembly 320 or on the central axis of the support cylinder 80 and the output end of the drive device. The size of the substrate can be 4 inches, 6 inches, 8 inches or 12 inches, etc., and the material of the substrate can be silicon, silicon carbide, gallium oxide, gallium nitride, sapphire or diamond. The center of the combination of multiple gas supply sections 220 is located on the central axis of the support cylinder 80, that is, the gas supply section 220 is arranged opposite to the storage section.

[0047] In one specific embodiment, each gas supply unit 220 includes a first mounting part 10, a first pipeline 20, a second pipeline 30, and a driving component 40. The first mounting part 10 is fixedly disposed on the side of the base plate 110 opposite to the reaction chamber 100. The first mounting part 10 is used to connect the first pipeline 20 and the second pipeline 30, and the first mounting part 10 has a mounting cavity communicating with the inside of the reaction chamber 100. The mounting cavity can accommodate part of the first pipeline 20 and part of the second pipeline 30. Both the first pipeline 20 and the second pipeline 30 are hollow tubes, and the aperture of the first pipeline 20 is smaller than the aperture of the second pipeline 30. The second pipeline 30 (coaxial) is sleeved on the first pipeline 20. The first pipeline 20 is connected to the first mounting part 10 and one end extends into the reaction chamber 100. The first pipeline 20 has a first channel Q1 arranged along its axial direction, and the first channel Q1 is used to transmit a first gas. The second conduit 30 is connected to the first mounting portion 10, and one end of the second conduit 30 extends into the reaction chamber 100. In the axial direction of the second conduit 30, the second conduit 30 includes a first section 31 and a second section 32 that are interconnected. The first section 31 is located on the outer periphery of the first conduit 20, and at least a portion of the first section 31 has a gap with the outer wall surface of the first conduit 20 to form a second channel Q2 for transmitting the second gas. The second section 32 is connected to the outlet of the first conduit 20, that is, the second section 32 has a third channel Q3 that simultaneously connects the outlet of the first channel Q1 and the outlet of the second channel Q2. The driving member 40 is connected to the first conduit 20 and / or the second conduit 30 and is used to drive the first conduit 20 and / or the second conduit 30 to rotate. Based on the rotation of the second conduit 30 and / or the first conduit 20, the first gas and the second gas are mixed in the third channel Q3 of the second section 32 and then ejected, flowing towards the growth surface of the substrate. In this embodiment, the first gas output from the first pipeline 20 and the second gas output from the first section 31 of the second pipeline 30 are mixed in a rotary manner in the second section 32. This rotary mixing can make the first gas and the second gas mix more evenly, which is beneficial to the epitaxial growth of the substrate. Furthermore, the mixed gas ejected from the second section 32 of the gas supply unit 220 is ejected in a rotary manner, which can make the gas ejected from the gas supply unit reach the growth surface of the substrate evenly, thereby improving the uniformity of the substrate deposition quality (such as thickness and doping). At the same time, the gas supply unit in this embodiment has a simple structure, which can further reduce the equipment cost.

[0048] Furthermore, the end of the first pipe 20 facing away from the reaction chamber 100 extends outside the first mounting portion 10. This design facilitates communication between the first pipe 20 and the gas supply system, allowing for the input of the first gas into the first pipe 20. Additionally, when the first pipe 20 rotates, the portion outside the first mounting portion 10 can connect to the drive component 40, thereby driving the first pipe 20 to rotate. The end of the second pipe 30 facing away from the reaction chamber 100 is located inside the mounting portion and is sealed to the surface of the first mounting portion 10 facing away from and towards the reaction chamber 100. The first mounting portion 10 has an inlet 11 on the side facing away from the reaction chamber 100 that communicates with the second pipe 30, facilitating communication between the second pipe 30 and the gas supply system, and allowing for the input of the second gas into the second pipe 30. The gas supply system includes a first flow rate control module (not shown) and a second flow rate control module (not shown). The first flow rate control module is located between the gas supply system and the first pipeline 20 and is used to control the gas flow rate entering the first pipeline 20. The second flow rate control module is located between the gas supply system and the second pipeline 30 and is used to control the gas flow rate entering the second channel of the second pipeline 30. In this embodiment, the rotation speed of the first pipeline 20 and / or the second pipeline 30 is controlled by the drive component 40, and the gas flow rates in the first pipeline 20 and the second pipeline 30 are controlled by the first flow rate control module and the second flow rate control module. This allows the first gas in the first pipeline 20 and the second gas in the second pipeline 30 to be fully mixed in the third channel Q3 of the second pipe section 32, thereby improving the quality of epitaxial growth.

[0049] For example, the first gas can be a process gas and the second gas can be a carrier gas, or the first gas can be a carrier gas and the second gas can be a process gas, or both the first gas and the second gas can be process gases. The process gas corresponding to the first gas and the process gas corresponding to the second gas can be the same or different. There is no specific limitation on the first gas and the second gas, and they can be selected according to actual needs.

[0050] In some embodiments, the drive unit 40 of the gas supply assembly 200 includes at least one drive part 41 (such as a motor) and at least one transmission part 42. The drive part 41 drives the first pipeline 20 and / or the second pipeline 30 to rotate synchronously through the transmission part 42. The transmission part 42 includes a drive gear 422 disposed at the output end of the drive unit 40, a driven gear 423 sleeved on the second pipeline 30 and / or the first pipeline 20, and a conveyor belt 421 connecting the drive gear 422 and the driven gear 423. In this embodiment, by driving the first pipeline 20 and / or the second pipeline 30 to rotate, on the one hand, the first gas in the first pipeline 20 and the second gas in the second pipeline 30 can be fully mixed in the third channel Q3 of the second pipe section 32, thereby further improving the epitaxial quality. On the other hand, the mixed gas ejected from the entire gas supply section 220 can be rotated and ejected, which can further increase the spray area, thereby enabling the gas ejected from the gas supply section to reach the growth surface of the substrate quickly and uniformly, thereby improving the uniformity of substrate deposition quality (such as thickness and doping).

[0051] In one embodiment, the first conduit 20 and / or the second conduit 30 are rotatably connected to the first mounting portion 10 via a bearing assembly.

[0052] refer to Figure 3 In one optional embodiment, the first pipe 20 is fixedly inserted into the side of the first mounting part 10 away from the base plate 110, the second pipe 30 is rotatably disposed in the first mounting part 10, the driving member 40 is connected to the second pipe 30 and is used to drive the second pipe 30 to rotate, the driving part 41 is disposed on the outside of the first mounting part 10 through the first mounting plate, and the side wall of the first mounting part 10 is provided with an opening 12, the driven gear 423 of the transmission part 42 is sleeved on the outer periphery of the second pipe 30 located in the first mounting part 10, and the conveyor belt 421 passes through the opening and connects the driving gear 422 and the driven gear 423.

[0053] In this embodiment, the bearing assembly includes a first bearing 61 and a second bearing 62 located within the first mounting portion 10 and sleeved around the outer periphery of the second pipeline 30. The first bearing 61 is located on the side of the first pipe segment 31 in the second pipeline 30 near the reaction chamber 100, and the second bearing 62 is located on the side of the first pipe segment 31 in the second pipeline 30 away from the reaction chamber 100. Further, the first bearing 61 and the second bearing 62 are respectively located on both sides of the driven gear 423 in the axial direction of the first pipe segment 31 in the second pipeline 30. This can also be understood as the driven gear 423 being located between the first bearing 61 and the second bearing 62. This design makes the rotation of the first pipe segment 31 in the second pipeline 30 smoother. In addition, since the driven gear 423 only applies a rotational torque to the first pipe segment 31 in the second pipeline 30 without any lateral force, the wear on the first bearing 61 cover and the second bearing 62 is very small, greatly increasing their service life. This avoids the problem of decreased rotational stability of the equipment due to bearing wear.

[0054] refer to Figure 4 In another alternative embodiment, the first pipe 20 is rotatably mounted on the side of the first mounting part 10 away from the base plate 110, and the second pipe 30 is fixedly disposed inside the first mounting part 10. That is, in this embodiment, the driving member 40 is connected to the first pipe 20 and is used to drive the first pipe 20 to rotate. The driving part 41 is disposed on the outside of the first mounting part 10 through the first mounting plate. The driven gear 423 of the transmission part 42 is sleeved on the outer periphery of the side of the first pipe 20 away from the reaction chamber 100. In this embodiment, the conveyor belt 421 is directly connected to the driving gear 422 and the driven gear 423, and there is no need to open the opening 12 on the first mounting part 10.

[0055] In this embodiment, the bearing assembly includes a third bearing 63 located at the connection between the first mounting portion 10 and the first pipeline 20.

[0056] In another alternative embodiment, the first conduit 20 is rotatably inserted into the side of the first mounting portion 10 opposite to the base plate 110, and the second conduit 30 is rotatably disposed within the first mounting portion 10, with the rotation direction of the first conduit 20 opposite to that of the second conduit 30. The driving member 40 includes two driving portions 41 and two transmission portions 42. For example, the driving member 40 includes a first driving portion, a second driving portion, a first transmission portion, and a second transmission portion. The first transmission portion connects the first driving portion and the first conduit 20, and drives the first conduit 20 to rotate in a first direction. The second transmission portion connects the second driving portion and the second conduit 30, and drives the second conduit 30 to rotate in a second direction, with the first direction opposite to the second direction.

[0057] In this embodiment, the bearing assembly includes a first bearing 61 and a second bearing 62 located within the first mounting portion 10 and sleeved on the outer periphery of the second pipeline 30, and a third bearing 63 located at the connection between the first mounting portion 10 and the first pipeline 20. The first bearing 61 is located on the side of the first pipe segment 31 in the second pipeline 30 closer to the reaction chamber 100, and the second bearing 62 is located on the side of the first pipe segment 31 in the second pipeline 30 away from the reaction chamber 100.

[0058] In some embodiments, the gas supply unit 220 further includes a first magnetohydrodynamic (MHD) seal 51 and a second MHD seal 52 located within the first mounting portion 10 and sleeved around the outer periphery of the second pipeline 30. The first MHD seal 51 and the second MHD seal 52 are spaced apart axially along the second pipeline 30. The first MHD seal 51 is located on the side of the first mounting portion 10 closer to the reaction chamber 100, and the second MHD seal 52 is located on the side of the first mounting portion 10 away from the reaction chamber 100. Thus, the first MHD seal 51 isolates the reaction chamber 100 from the atmosphere, and the second MHD seal 52 isolates the second channel Q2 of the second pipeline 30 in the gas supply unit 220 from the atmosphere, thereby improving the isolation of the process gas and protective gas from the external environment and preventing process gas mixing. The first bearing 61 and the second bearing 62 are located between the first MHD seal 51 and the second MHD seal 52.

[0059] refer to Figure 5 In one optional embodiment, a first air outlet 321 is provided on the side surface of the second pipe section 32 opposite to the first pipe section 31, that is, a first through hole is opened on the side surface of the second pipe section 32 opposite to the first pipe section 31 to form the first air outlet 321. Further, the cross section of the second pipe section 32 along its axial direction is V-shaped or trumpet-shaped, specifically in the direction from the first mounting part 10 to the reaction chamber 100 (in the direction from the first pipe section 31 to the second pipe section 32). The cross-sectional width of the third channel Q3 gradually increases. This arrangement can expand the spray area. In this embodiment, after the first gas and the second gas are mixed in the second pipe section 32, they are rotated and sprayed out through the first air outlet 321.

[0060] refer to Figure 6 and Figure 7In another optional embodiment, the sidewall of the second pipe section 32 is provided with a plurality of second gas outlets 322 arranged circumferentially, and the center line of the second gas outlets 322 is inclined relative to the radial line and axial line of the second pipe section 32. This facilitates the generation of a spiral flow of the gas ejected from the second pipe section 32. This design can further compensate for the insufficient rotation of the mixed gas ejected from the second pipe section 32 when the second pipe 30 is not rotating. At the same time, when the second pipe 30 is rotating, the rotation of the mixed gas ejected from the second pipe section 32 can be further increased, which is beneficial to improving the uniformity of the distribution of film growth thickness and doping concentration.

[0061] For example, the second air outlet 322 has an elongated opening.

[0062] For example, the cross-sectional width of the third channel Q3 can be equal.

[0063] refer to Figure 8 and Figure 9 In another optional embodiment, the sidewall of the second pipe section 32 is provided with a plurality of air outlet pipes 323 communicating with the second pipe section 32, and the plurality of air outlet pipes 323 are arranged obliquely along the circumference of the second pipe section 32 and are radiating outward in a trumpet shape. This design allows the airflow to be ejected from multiple directions, which can further expand the spray area, thereby enabling the gas ejected from the gas supply section 220 to reach the growth surface of the substrate quickly and evenly, thereby improving the uniformity of substrate deposition quality (such as thickness and doping).

[0064] In one embodiment, a vacuum port 1202 is provided on the top plate 120, which is connected to a vacuum device (not shown) via a pipeline. In other embodiments, the vacuum port 1202 may be provided on the reaction chamber 100 (e.g., the vacuum port 1202 may be provided on the side of the reaction chamber 100 near the top plate 120, and its height may be slightly higher than the gas equalization cylinder, so that the gas after the reaction and after being equalized by the gas equalization cylinder is extracted through the vacuum port 1202).

[0065] In some embodiments, the rotating assembly 310 includes a second mounting part, a rotating shaft (not shown), and a frameless motor (not shown). The second mounting part is disposed on the side of the top plate 120 away from the bottom plate 110. The second mounting part has a receiving cavity, which is connected to the reaction chamber 100 through a hollowed-out portion in the middle of the bottom plate 110. The rotating shaft is rotatably disposed in the receiving cavity of the second mounting part around its own axis. The frameless motor includes a rotor and a stator. The stator is fixedly disposed on the housing, and the rotor is sleeved on the outer wall of the rotating shaft and correspondingly disposed inside the stator. When the frameless motor is energized, it drives the rotor to perform circular motion, thereby driving the rotating shaft and the support assembly 320 to rotate synchronously. Since the rotating shaft is directly driven by the frameless motor, only a rotational torque is applied to the rotating shaft, and there is no lateral force, making the rotation of the rotating device more stable and reliable. In addition, the drive structure using a frameless motor has higher transmission efficiency than the drive structure with transmission components such as a gearbox, transmission belt, and gears, which reduces energy consumption and saves costs. Synchronous belts are prone to fatigue damage when operating at high speeds, and the belt teeth are prone to wear and even breakage. When a synchronous belt is worn or broken and needs to be replaced, all parts must be completely disassembled, resulting in poor maintainability.

[0066] In some embodiments, the support assembly 320 includes a rotating disk 70 and a support cylinder 80. The rotating disk 70 is connected to one end of a rotating shaft extending into the reaction chamber 100. The support cylinder 80 is located on the side of the rotating disk 70 opposite to the rotating shaft. The tray assembly 90 is positioned on the side of the support cylinder 80 opposite to the rotating disk 70. In this embodiment, the tray assembly 90 and the support cylinder 80 are relatively stationary and have no dynamic friction, thus improving the service life of the tray assembly 90. Preferably, the rotational speed of the support cylinder 80 is less than 200 rpm (i.e., the substrate rotational speed is less than 200 rpm). Further, the rotational speed of the support cylinder 80 is less than 100 rpm to avoid the risk of substrate flyaway or wafer flyaway.

[0067] In some embodiments, the support cylinder 80 includes a body 81, which is a hollow cylinder with a first protrusion 82 extending radially outward on one side surface and a second protrusion 83 extending radially outward on the opposite side surface. The second protrusion 83 abuts against a rotating disk 70, and the body 81 is secured to the rotating disk 70 by fasteners. The first protrusion 82 connects to a tray assembly 90, which has a connecting portion 91 (connected by a snap-fit) that matches the first protrusion 82. The tray assembly 90 has a receiving portion that is a perforated / cylindrical shape extending axially along the body 81, and its bottom side has a protrusion extending radially upward that abuts against an inserted substrate. With this configuration, the tray assembly 90 and its first heater 84 are positioned above and inside the reaction chamber 100, while the gas supply assembly 200 is located at the bottom of the reaction chamber 100. Specifically, in the Z-direction (height direction), the tray assembly 90 is positioned above the gas supply assembly 200, with the substrate's growth surface (the side for epitaxial layer growth) facing the gas supply assembly 200. During epitaxial growth, the gas introduced from the gas supply assembly 200 rises from below the substrate, is heated, and easily reaches the substrate surface to grow the epitaxial layer. This avoids particles falling onto the substrate surface, significantly reducing particle generation and improving the yield of epitaxial growth. This structure also reduces the pre-reaction of process gases at the gas supply assembly 200.

[0068] Furthermore, a first heater 84 is provided inside the support cylinder 80. The first heater 84 includes a heat insulation element 841, a first heating element 842, and a second heating element 843. The first heating element 842 is connected to the heat insulation element 841 through a first lead-out fixing end, and the second heating element 843 is located around the first heating element 842 and is connected to the heat insulation element 841 through a second lead-out fixing end. The first heating element 842 and the second heating element 843 are respectively connected to an external power source and are controlled by them individually.

[0069] For example, in this application, the first heating element 842 and the second heating element 843 are resistance heaters, and their material is graphite.

[0070] In one embodiment, the reaction chamber 100 is provided with a first graphite component 410 and a second graphite component 420 arranged axially therein. The first graphite component 410 is fixedly disposed within the reaction chamber and close to the gas supply assembly 200, while the second graphite component 420 is located on the side of the first graphite component 410 away from the gas supply assembly 200. A first heat-insulating component 510 is fitted onto the first graphite component 410, and only a second heat-insulating component 520 is fitted onto the second graphite component 420. The first graphite component 410, the second graphite component 420, the first heat-insulating component 510, and the second heat-insulating component 520 are all hollow cylindrical designs. There is a gap between the first heat-insulating component and the first heat-insulating component 510, and a second heater 600 (also referred to as a sidewall heater) is disposed within this gap. The second heater 600 preheats the gas introduced from the gas supply assembly 220.

[0071] Furthermore, a lifting assembly 700 is provided on the side of the second insulation component 520 away from the first insulation component 510. The lifting assembly 700 connects the second insulation component 520 and the second graphite component 420 through a support plate. During the epitaxial growth of the substrate, the lifting assembly 700 drives the second insulation component 520 and the second graphite component 420 to rise and abut against the first insulation component 510 and the first graphite component 410, so that the first graphite component 410 and the second part enclose to form a sealed cavity. After the epitaxial growth of the substrate, the lifting assembly 700 drives the second insulation component 520 and the second graphite component 420 to fall, and the gas output from the gas supply unit 220 is drawn out of the reaction chamber 100 by the vacuum system.

[0072] The above embodiments are only for illustrating the technical concept and features of this application, and are intended to enable those skilled in the art to understand the content of this application and implement it accordingly. They should not be used to limit the scope of protection of this application. All equivalent changes or modifications made in accordance with the spirit and essence of this application should be included within the scope of protection of this application.

Claims

1. An epitaxial growth apparatus, characterized in that, include: The reaction chamber has a gas supply assembly at one axial end and a rotary support device at the other end. The rotating support device includes a rotating component and a support component disposed at the output end of the rotating component. The support component is provided with a tray component, and the tray component is provided with at least two storage parts for placing a substrate. The gas supply assembly includes at least two gas supply sections and a driving member that matches the gas supply sections. The receiving section matches the gas supply section one by one. The driving member is connected to the corresponding gas supply section and drives the gas supply section to rotate so that the gas supplied by the gas supply section is rotated out and flows to the growth surface of the substrate. The gas supply assembly further includes a connecting plate, and at least two gas supply units are spaced apart and disposed on the connecting plate, wherein each gas supply unit includes: The first mounting part is located on the connecting plate and communicates with the reaction chamber; A first pipeline is connected to the first mounting part and one end of the first pipeline extends into the reaction chamber. The first pipeline is used to transmit a first gas. The second pipeline is connected to the first mounting part and one end of the second pipeline extends into the reaction chamber. In the axial direction, the second pipeline includes a first pipe section and a second pipe section that are interconnected. The first pipe section is located on the outer periphery of the first pipeline and is used to transmit the second gas. The second pipe section is connected to the gas outlet of the first pipeline. The drive unit is connected to the first pipeline and / or the second pipeline, and rotates the second pipeline and / or the first pipeline to mix the first gas and the second gas in the second pipeline section before rotating and spraying them out.

2. The epitaxial growth apparatus as described in claim 1, characterized in that, The second pipe section has a first air outlet on the side surface opposite to the first pipe section; Alternatively, the sidewall of the second pipe section is provided with a plurality of second air outlets arranged circumferentially, and the center line of the second air outlet is inclined relative to both the radial line and the axial line of the second pipe section. Alternatively, the sidewall of the second pipe section is provided with multiple air outlet pipes that communicate with the second pipe section, and the multiple air outlet pipes are arranged obliquely along the circumference of the second pipe section and radiate outward in a trumpet shape.

3. The epitaxial growth apparatus as described in claim 2, characterized in that, From the direction of the first pipe segment to the second pipe segment, the cross-sectional width of the second pipe segment is equal or gradually increases.

4. The epitaxial growth apparatus as described in claim 1, characterized in that, The first gas includes process gas, and the second gas includes protective gas; Alternatively, the first gas may include a protective gas, and the second gas may include a process gas; Alternatively, both the first gas and the second gas include a protective gas, and the first gas and the second gas are the same; Alternatively, both the first gas and the second gas include a protective gas, and the first gas and the second gas are not the same.

5. The epitaxial growth apparatus as described in claim 1, characterized in that, The gas supply unit also includes: The first bearing and the second bearing are spaced apart along the axial direction of the second pipe section within the first mounting portion, and the second pipe section is disposed within the first bearing and the second bearing; And / or, a third bearing, located at the connection between the first pipeline and the first mounting portion.

6. The epitaxial growth apparatus as described in claim 5, characterized in that, Also includes: A first magnetohydrodynamic seal is located on the inner side of the first mounting portion near the connecting plate, and is sleeved on the outer periphery of the second pipeline; and The second magnetohydrodynamic seal is located on the side of the first mounting portion away from the connecting plate, and is sleeved on the outer periphery of the second pipeline.

7. The epitaxial growth apparatus as described in claim 1, characterized in that, The gas supply assembly is located at the bottom of the reaction chamber, and the rotating support device is located at the top of the reaction chamber. Alternatively, the gas supply assembly is located on the top side of the reaction chamber, and the rotating support device is located on the bottom side of the reaction chamber.

8. The epitaxial growth apparatus as described in claim 1, characterized in that, The epitaxial growth apparatus further includes a gas supply system, which includes a first flow rate control module and a second flow rate control module. The first flow rate control module is used to control the gas flow rate entering the first pipeline, and the second flow rate control module is used to control the gas flow rate entering the second pipeline section.

9. The epitaxial growth apparatus as described in claim 1, characterized in that, The driving component includes a driving part fixedly disposed on the outer periphery of the first mounting part and a transmission part connecting the driving part and the first pipeline or the second pipeline. The driving part drives the first pipeline or the second pipeline to rotate through the transmission part. Alternatively, the driving component includes a first driving part, a second driving part, a first transmission part, and a second transmission part. The first transmission part connects the first driving part to the first pipeline, and the first driving part drives the first pipeline to rotate in a first direction. The second transmission part connects the second driving part to the second pipeline, and the second driving part drives the second pipeline to rotate in a second direction, wherein the first direction is opposite to the second direction.

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