GaN pressure sensor
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- GUANGXI YUNXIN SEMICON TECH CO LTD
- Filing Date
- 2026-06-11
- Publication Date
- 2026-07-17
AI Technical Summary
Existing GaN-based pressure sensors have low sensitivity in extreme environments and cannot be dynamically adjusted. They are also expensive and lack flexibility.
A GaN pressure sensor was designed by etching a back cavity on the back of a substrate to construct a pressure-sensitive element. Combined with a gate to control the conduction state of a two-dimensional electron gas, the sensor utilizes the piezoelectric effect and high-temperature resistance of GaN material to achieve efficient transmission of mechanical stress and accurate output of electrical signals.
It significantly improves the sensor's detection sensitivity, enables stable operation in high-temperature and high-pressure environments, and dynamically adjusts the sensor's sensitivity and measurement range by regulating the gate voltage, thereby reducing research and development and manufacturing costs.
Smart Images
Figure CN122409017A_ABST