A laser chip far field divergence angle verification device

Abstract

The application relates to a kind of laser chip far field divergence angle verification devices, including fixed frame, Z-axis displacement mechanism, X-axis displacement mechanism, Y-axis displacement mechanism, beam quality analyzer and controller, fixed frame is used to install the laser chip to be measured;Z-axis displacement mechanism is oppositely arranged with the fixed frame;X-axis displacement mechanism is installed on the Z-axis displacement mechanism;Y-axis displacement mechanism is installed on the X-axis displacement mechanism;Beam quality analyzer is installed on the Y-axis displacement mechanism;The control end of controller is electrically connected with the controlled end of Z-axis displacement mechanism, X-axis displacement mechanism, Y-axis displacement mechanism and beam quality analyzer.This application adopts vector prediction and high-frequency closed-loop linkage interpolation, eliminates the dead time in traditional method, makes the divergence angle full stroke test time of single chip from conventional dozens of seconds to several seconds, opens the detection capacity bottleneck in the process that laser chip moves from early research and development stage to small batch and large-scale production.

Description

Technical Field

[0001] This invention relates to the field of laser detection technology, and more specifically to a laser chip far-field divergence angle verification device. Background Technology

[0002] The far-field divergence angle of a semiconductor laser is one of the core indicators for evaluating its beam quality. In chip manufacturing, packaging, and aging testing, it is necessary to accurately measure the laser spot size at different propagation distances to fit the far-field divergence angle. Traditional measurement devices typically include a Z-axis slide rail moving along the light propagation direction, an X / Y-axis adjustment stage perpendicular to the optical axis, and a beam quality analyzer, completing the full-stroke measurement through step-by-step movement and point-by-point acquisition.

[0003] However, existing technologies have the following prominent problems in practical applications: 1. Optical axis pointing deviation leads to low testing efficiency. The light emission direction of semiconductor laser chips is often not strictly perpendicular to the chip end face, but has a certain angle. When the measuring device moves along the Z-axis (light propagation direction), the center of the light spot will gradually deviate from the center of the detector's field of view. Existing equipment usually adopts a step-by-step pause process of "moving the Z-axis → stopping → adjusting the X / Y axes to find the center of the light spot → taking a picture". The full-stroke test of a single chip often requires dozens or even hundreds of pauses and adjustments, resulting in a single test taking tens of seconds, which is completely unable to meet the high-rate-of-time testing requirements of large-scale mass production lines.

[0004] 2. Fixed sampling strategies cannot balance efficiency and accuracy. Existing technologies generally employ equal-interval sampling throughout the entire beam travel (e.g., sampling once every 10mm). In the "near-field to far-field transition region" where beam changes drastically (typically 0 to 3 times the Rayleigh length), sparse sampling with equal intervals leads to distortion of the fitting curve and a significant increase in divergence angle calculation error; while in the "stable far-field region" where beam changes linearly, overly dense sampling results in a large amount of invalid time and data redundancy, severely slowing down the testing cycle.

[0005] 3. Difficulty in dynamic range matching. As the test distance increases, the beam energy attenuates inversely proportional to the square of the distance. If fixed exposure parameters are used, overexposure (saturated spot, invalid data) is likely to occur during near-end acquisition, while the signal-to-noise ratio drops sharply (blurred spot edges) during far-end acquisition. Existing equipment lacks an automated dynamic gain adjustment mechanism, and operators often need to manually set parameters in segments, which is not only cumbersome but also makes it difficult to ensure the consistency of data throughout the entire travel range. Summary of the Invention

[0006] Based on the above description, the present invention provides a laser chip far-field divergence angle verification device, which aims to solve the problems of low efficiency of step-pause measurement, inaccurate measurement due to optical axis pointing deviation, inability of fixed sampling strategy to balance accuracy and efficiency, and insufficient dynamic range in the prior art.

[0007] The technical solution of the present invention to solve the above-mentioned technical problems is as follows: A laser chip far-field divergence angle verification device includes: A mounting bracket for mounting the laser chip to be tested; The Z-axis displacement mechanism is arranged opposite to the fixed frame, and the moving direction of the Z-axis displacement mechanism is parallel to the optical axis of the laser chip. The X-axis displacement mechanism is mounted on the Z-axis displacement mechanism; The Y-axis displacement mechanism is mounted on the X-axis displacement mechanism; The moving directions of the X-axis displacement mechanism, the Y-axis displacement mechanism, and the Z-axis displacement mechanism are all perpendicular to each other. A beam quality analyzer is mounted on the Y-axis displacement mechanism; A controller, the control terminal of which is electrically connected to the controlled terminals of the Z-axis displacement mechanism, the X-axis displacement mechanism, the Y-axis displacement mechanism, and the beam quality analyzer, is configured to perform the following method: The beam waist radius and wavelength of the laser chip are obtained and the Rayleigh length is calculated. Multiple sampling points are generated based on the Rayleigh length. Obtain the three-dimensional coordinates of the near-field position and the three-dimensional coordinates of the far-field position, and establish the linear propagation equation of the laser chip beam in three-dimensional space based on the two three-dimensional coordinates. The actual position of the beam quality analyzer as it moves continuously along the Z-axis is obtained. The actual position is then substituted into the linear transmission equation to calculate the theoretical command coordinates of the X-axis and Y-axis. The theoretical command coordinates of the X-axis and Y-axis are then sent to the X-axis displacement mechanism and the Y-axis displacement mechanism in a one-to-one correspondence. When the beam quality analyzer reaches each sampling point, it is triggered to acquire an image and calculate the spot diameter data for each sampling point. The far-field divergence angle is calculated by linearly fitting all the light spot diameter data.

[0008] Based on the above technical solution, the present invention can be further improved as follows.

[0009] Furthermore, the step of obtaining the three-dimensional coordinates of the near-field position and the three-dimensional coordinates of the far-field position, and establishing the linear propagation equation of the laser chip beam in three-dimensional space based on the two three-dimensional coordinates, specifically includes: The Z-axis displacement mechanism is driven to move the beam quality analyzer to the near-field position. Then, the X-axis displacement mechanism and the Y-axis displacement mechanism are driven to perform two-dimensional optimization. If the deviation between the energy centroid coordinates of the laser chip spot and the physical center coordinates of the target surface of the beam quality analyzer is less than the preset following dead zone threshold, the alignment is determined to be complete. The three-dimensional coordinates of the current position are recorded to obtain the first three-dimensional coordinates. The Z-axis displacement mechanism is driven to move the beam quality analyzer to the far-field position. Then, the X-axis displacement mechanism and Y-axis displacement mechanism are driven to perform two-dimensional optimization. If the deviation between the energy centroid coordinates of the laser chip spot and the physical center coordinates of the target surface of the beam quality analyzer is less than the preset following dead zone threshold, the alignment is determined to be complete. The three-dimensional coordinates of the current position are recorded to obtain the second three-dimensional coordinates. The linear propagation equation of the laser chip beam in three-dimensional space is established based on the first three-dimensional coordinates and the second three-dimensional coordinates.

[0010] Furthermore, the calculation formula for the linear transmission equation is as follows:

[0011] In the formula: x is the X-axis coordinate parameter; y is the Y-axis coordinate parameter; z is the Z-axis coordinate parameter; k x k y This represents the directional deviation angle slope of the laser chip's optical axis.

[0012] Furthermore, the two-dimensional optimization includes coarse positioning and step approximation.

[0013] Furthermore, the step of sending the theoretical command coordinates of the X-axis and the theoretical command coordinates of the Y-axis to the X-axis displacement mechanism and the Y-axis displacement mechanism in a one-to-one correspondence specifically includes: The theoretical command coordinates of the X-axis and the theoretical command coordinates of the Y-axis are sent to the X-axis displacement mechanism and the Y-axis displacement mechanism in a one-to-one correspondence using linear interpolation.

[0014] Furthermore, when triggering the beam quality analyzer to perform image acquisition, the method further includes: The target integration time or gain of the beam quality analyzer is adjusted based on the coordinate parameters of each sampling point on the Z-axis.

[0015] Furthermore, the formula for calculating the target integration time is:

[0016] In the formula: d is the coordinate parameter of the sampling point on the Z-axis; For reference distance.

[0017] Furthermore, the controller is also configured to: The far-field divergence angle is compared with a preset threshold value, and a qualified or unqualified result is output.

[0018] Compared with the prior art, the technical solution of this application has the following beneficial technical effects: (1) The present invention uses vector prediction and high-frequency closed-loop linkage interpolation to eliminate the dead time of dozens of "stop-image correction-restart" in the traditional method, so that the divergence angle full-stroke test time of a single chip is reduced from tens of seconds to within a few seconds, thus breaking through the bottleneck of detection capacity in the process of laser chip moving from the early research and development stage to small batch and large-scale mass production.

[0019] (2) The present invention avoids the error in the calculation of the spot diameter caused by overexposure or underexposure through dynamic exposure strategy; 1ms real-time center locking ensures that the image is always in the optimal optical axis area of ​​the lens, strictly controls the alignment error in motion to within 5μm, and eliminates the measurement distortion caused by lens edge aberration.

[0020] (3) The adaptive sampling strategy of the present invention enables the same set of hardware to seamlessly switch between single-tube chips for testing micron-level divergence angles and bar chips for testing degree-level divergence angles. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the structure of a laser chip far-field divergence angle verification device provided in an embodiment of the present invention; Figure 2 This is a control flowchart of the controller in an embodiment of the present invention; Figure 3 This is a flowchart of S2 in an embodiment of the present invention.

[0023] Explanation of reference numerals in the attached drawings: 10, fixed frame; 20, Z-axis displacement mechanism; 30, X-axis displacement mechanism; 40, Y-axis displacement mechanism; 50, beam quality analyzer. Detailed Implementation

[0024] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate embodiments of the present application. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0026] It is understood that spatial relation terms such as "below," "under," "below," "below," "above," "above," etc., can be used here to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, the element or feature described as "below" or "below" of the other element or feature will be oriented "above" the other element or feature. Therefore, the exemplary terms "below" and "below" can include both upper and lower orientations. Furthermore, the device may also include other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptive terms used herein will be interpreted accordingly.

[0027] When used herein, the singular forms of “a,” “an,” and “the” may also include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising,” “including,” or “having,” etc., specify the presence of the stated feature, whole, step, operation, component, part, or combination thereof, but do not preclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof.

[0028] Reference Figure 1As shown, the present invention provides a technical solution: a laser chip far-field divergence angle verification device, comprising a mounting frame 10, a Z-axis displacement mechanism 20, an X-axis displacement mechanism 30, a Y-axis displacement mechanism 40, a beam quality analyzer 50, and a controller. The mounting frame 10 is used to mount the laser chip to be tested; the Z-axis displacement mechanism 20 is disposed opposite to the mounting frame 10, and the moving direction of the Z-axis displacement mechanism 20 is parallel to the optical axis of the laser chip; the X-axis displacement mechanism 30 is mounted on the Z-axis displacement mechanism 20; the Y-axis displacement mechanism 40 is mounted on the X-axis displacement mechanism 30; the moving directions of the X-axis displacement mechanism 30 and the Y-axis displacement mechanism 40 are perpendicular to the moving direction of the Z-axis displacement mechanism 20; the beam quality analyzer 50 is mounted on the Y-axis displacement mechanism 40; the control terminal of the controller is electrically connected to the controlled terminals of the Z-axis displacement mechanism 20, the X-axis displacement mechanism 30, the Y-axis displacement mechanism 40, and the beam quality analyzer 50.

[0029] Reference Figure 2 As shown, in some embodiments, the controller is configured to perform the following steps: S1, obtain the beam waist radius and wavelength of the laser chip and calculate the Rayleigh length, and generate multiple sampling points based on the Rayleigh length.

[0030] Specifically, by obtaining the beam waist radius and wavelength of the laser chip from a pre-built chip test database, and based on the Rayleigh length Z... R The Rayleigh length is calculated using the formula, and then the near-field nonlinear transition region and the far-field linear region are distinguished based on the Rayleigh length.

[0031] For example, in the nonlinear transition region of 0 to 3 Rayleigh lengths, the beam diameter of the laser chip increases rapidly and nonlinearly with distance, thus automatically generating high-density sampling points (e.g., a spacing of 2 mm between adjacent sampling points). In the linear far-field region greater than 3 Rayleigh lengths, the beam diameter of the laser chip expands approximately linearly, thus automatically generating sparse sampling points (e.g., a spacing of 20 mm between adjacent sampling points).

[0032] Adaptive sampling resolves the efficiency-accuracy conflict inherent in fixed-step sampling. In the near-field nonlinear transition region where the laser chip beam undergoes drastic changes, dense sampling ensures the accuracy of the fitted curve and avoids distortion in divergence angle calculation. In the gently changing far-field linear region, sparse sampling significantly reduces redundant data acquisition and storage time. Compared to equidistant sampling, this invention reduces the number of sampling points while maintaining the same fitting accuracy, thereby further shortening the total testing time.

[0033] S2, obtain the three-dimensional coordinates of the near-field position and the three-dimensional coordinates of the far-field position, and establish the linear propagation equation of the laser chip beam in three-dimensional space based on the two three-dimensional coordinates.

[0034] It should be noted that the near-field position refers to the position close to the light-emitting surface of the laser chip, while the far-field position refers to the position far from the light-emitting surface of the laser chip.

[0035] Reference Figure 3 As shown, in some embodiments, S2 includes the following steps: S21, drive the Z-axis displacement mechanism 20 to move the beam quality analyzer 50 to the near field position, and then drive the X-axis displacement mechanism 30 and the Y-axis displacement mechanism 40 to perform two-dimensional optimization. If the deviation between the energy centroid coordinates of the laser chip spot and the target physical center coordinates of the beam quality analyzer 50 is less than the preset following dead zone threshold, then the alignment is determined to be complete, and the three-dimensional coordinates of the current position are recorded to obtain the first three-dimensional coordinates.

[0036] For example, two-dimensional optimization may include coarse localization and step approximation. The following dead zone threshold may be 5 μm.

[0037] It should be noted that coarse positioning refers to rapidly scanning with the first step length to bring the light spot into the effective field of view of the target surface; step approximation refers to finely adjusting with the second largest step length until the deviation is less than the following dead zone threshold.

[0038] S22, drive the Z-axis displacement mechanism 20 to move the beam quality analyzer to the far field position, and then drive the X-axis displacement mechanism 30 and Y-axis displacement mechanism 40 to perform two-dimensional optimization. If the deviation between the energy centroid coordinates of the laser chip spot and the target physical center coordinates of the beam quality analyzer 50 is less than the preset following dead zone threshold, then the alignment is determined to be complete, and the three-dimensional coordinates of the current position are recorded to obtain the second three-dimensional coordinates. S23, establish the linear propagation equation of the laser chip beam in three-dimensional space based on the first three-dimensional coordinates and the second three-dimensional coordinates.

[0039] The formula for calculating the linear transmission equation is:

[0040] In the formula: x is the X-axis coordinate parameter; y is the Y-axis coordinate parameter; z is the Z-axis coordinate parameter; k x k y This represents the directional deviation angle slope of the laser chip's optical axis.

[0041] Specifically, the Z-axis displacement mechanism 20 moves the beam quality analyzer to the near-field position Z_min (corresponding to the near-field nonlinear transition region). Upon arrival, the X-axis displacement mechanism 30 and the Y-axis displacement mechanism 40 are driven to perform two-dimensional optimization. This two-dimensional optimization consists of two stages: a coarse positioning stage with a large step size for rapid scanning, ensuring the laser chip's spot enters the effective field of view of the target surface of the beam quality analyzer 50; and a step-approach stage switching to small step size for fine adjustment, while simultaneously calculating the deviation between the spot's energy centroid coordinates and the target surface's physical center coordinates in real time.

[0042] When the deviation is less than the preset dead zone threshold, the controller determines that alignment is complete and records the current three-dimensional coordinates P1(x1, y1, z1). Similarly, the controller drives the beam quality analyzer 50 to move to the far-field position Z_max (i.e., the corresponding far-field linear region), repeats the above alignment process, and records the current three-dimensional coordinates P2(x2, y2, z2). Based on the two points P1 and P2, the geometric principle that two points determine a straight line is used to establish the linear transmission equation of the beam in three-dimensional space.

[0043] By following the dead zone threshold, unnecessary time spent repeatedly oscillating to adjust to absolute zero deviation can be avoided. The strategy of coarse positioning and step approximation balances speed and accuracy, and the two-dimensional optimization time can be shortened compared to a single uniform step size search.

[0044] S3, obtain the actual position of the beam quality analyzer as it moves continuously along the Z-axis, substitute the actual position into the linear transmission equation to calculate the theoretical command coordinates of the X-axis and Y-axis, and send the theoretical command coordinates of the X-axis and Y-axis to the X-axis displacement mechanism 30 and the Y-axis displacement mechanism 40 in a one-to-one correspondence.

[0045] Specifically, during the formal verification phase, the beam quality analyzer continuously acquires data. The Z-axis displacement mechanism 20 drives the beam quality analyzer at a constant speed V. z Continuous movement along the Z-axis typically employs a backward scanning method from far to near (from the far-field position Z). max To the near field position Z min To avoid errors caused by motion gaps, a hard real-time control loop is initiated (control cycle as short as 1ms). Within each control cycle, the actual position Z-axis of the Z-axis displacement mechanism 20 is read at high frequency. real Immediately substitute the values ​​into the linear transmission equation to calculate the theoretical X-axis and Y-axis command coordinates corresponding to the current cycle.

[0046] Through the above high-frequency closed-loop tracking, in the continuous high-speed motion of the Z-axis at tens of millimeters per second, the dynamic tracking error between the center of the light spot and the center of the target surface is always constrained within the pixel size of the detector (such as within the range of 3~5μm), truly achieving uninterrupted alignment.

[0047] In some embodiments, the theoretical command coordinates of the X-axis and the theoretical command coordinates of the Y-axis are sent to the X-axis displacement mechanism 30 and the Y-axis displacement mechanism 40 in a one-to-one correspondence, specifically including: The theoretical command coordinates of the X-axis and the theoretical command coordinates of the Y-axis are sent to the X-axis displacement mechanism 30 and the Y-axis displacement mechanism 40 in a one-to-one correspondence using linear interpolation.

[0048] Specifically, linear interpolation is used to send the theoretical command coordinates of the X-axis and Y-axis to the X-axis displacement mechanism 30 and the Y-axis displacement mechanism 40 in a one-to-one correspondence. At the same time, interpolation pulses are continuously sent to the X-axis displacement mechanism 30 and the Y-axis displacement mechanism 40, so that the two axes move synchronously at the same speed ratio and finally reach the target point at the same time.

[0049] S4, when the beam quality analyzer 50 reaches each sampling point, it triggers the beam quality analyzer 50 to acquire images and calculates the spot diameter data for each sampling point.

[0050] It should be noted that the diameter data for each spot includes the diameter and the location information of its corresponding sampling point.

[0051] For example, the spot diameter can be determined using the D4σ algorithm.

[0052] Specifically, during continuous scanning, the actual position Z fed back by the Z-axis displacement mechanism 20 is monitored in real time. real And compare it with all sampling points. When Z real When the deviation from the position of a certain sampling point enters the preset trigger window, a trigger acquisition operation is performed: a microsecond-level hard trigger signal is generated through the hardware position comparison output function, which immediately triggers the beam quality analyzer to acquire images, and then calculates the diameter of the current light spot and stores it in the buffer.

[0053] Before or simultaneously with triggering the beam quality analyzer to acquire images, including: Adjust the target integration time or gain of the beam quality analyzer based on the coordinate parameters of each sampling point on the Z-axis.

[0054] The formula for calculating the target integration time is:

[0055] In the formula: d is the coordinate parameter of the sampling point on the Z-axis; For reference distance.

[0056] Specifically, when the acquisition is triggered, the analyzer’s integration time or analog gain is automatically adjusted according to the current distance Z_real and the physical law that the light intensity decreases inversely with the square of the propagation distance, so that the peak light intensity of the acquired spot is between 70% and 90% of the sensor’s dynamic range.

[0057] S5, perform linear fitting on all spot diameter data to calculate the far-field divergence angle.

[0058] S6 compares the far-field divergence angle with the preset threshold and outputs a pass / fail result.

[0059] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A laser chip far-field divergence angle verification device, characterized in that, include: A mounting bracket (10) is used to mount the laser chip to be tested; The Z-axis displacement mechanism (20) is arranged opposite to the fixed frame (10), and the moving direction of the Z-axis displacement mechanism (20) is parallel to the optical axis of the laser chip; The X-axis displacement mechanism (30) is mounted on the Z-axis displacement mechanism (20); The Y-axis displacement mechanism (40) is mounted on the X-axis displacement mechanism (30); The moving directions of the X-axis displacement mechanism (30), the Y-axis displacement mechanism (40), and the Z-axis displacement mechanism (20) are perpendicular to each other. A beam quality analyzer (50) is mounted on the Y-axis displacement mechanism (40); A controller, the control terminal of which is electrically connected to the controlled terminals of the Z-axis displacement mechanism (20), the X-axis displacement mechanism (30), the Y-axis displacement mechanism (40), and the beam quality analyzer (50), is configured to perform the following methods: The beam waist radius and wavelength of the laser chip are obtained and the Rayleigh length is calculated. Multiple sampling points are generated based on the Rayleigh length. Obtain the three-dimensional coordinates of the near-field position and the three-dimensional coordinates of the far-field position, and establish the linear propagation equation of the laser chip beam in three-dimensional space based on the two three-dimensional coordinates. Drive the Z-axis displacement mechanism (20) to make the beam quality analyzer (50) move continuously along the Z-axis; start the hard real-time control cycle, and acquire the actual position of the beam quality analyzer (50) when it moves continuously along the Z-axis at high frequency in each control cycle. Substitute the actual position into the linear transmission equation to calculate the theoretical command coordinates of the X-axis and the theoretical command coordinates of the Y-axis, and send the theoretical command coordinates of the X-axis and the theoretical command coordinates of the Y-axis to the X-axis displacement mechanism and the Y-axis displacement mechanism in a linear interpolation manner. When the beam quality analyzer (50) reaches each sampling point, it triggers the beam quality analyzer (50) to acquire images and calculates the spot diameter data for each sampling point; The far-field divergence angle is calculated by linearly fitting all the light spot diameter data.

2. The laser chip far-field divergence angle verification device according to claim 1, characterized in that, The process of obtaining the three-dimensional coordinates of the near-field position and the three-dimensional coordinates of the far-field position, and establishing the linear propagation equation of the laser chip beam in three-dimensional space based on the two three-dimensional coordinates, specifically includes: The Z-axis displacement mechanism (20) is driven to move the beam quality analyzer (50) to the near-field position, and then the X-axis displacement mechanism (30) and the Y-axis displacement mechanism (40) are driven to perform two-dimensional optimization. If the deviation between the energy centroid coordinates of the laser chip spot and the target physical center coordinates of the beam quality analyzer (50) is less than the preset following dead zone threshold, the alignment is determined to be complete, the three-dimensional coordinates of the current position are recorded, and the first three-dimensional coordinates are obtained. The Z-axis displacement mechanism (20) is driven to move the beam quality analyzer (50) to the far-field position, and then the X-axis displacement mechanism (30) and Y-axis displacement mechanism (40) are driven to perform two-dimensional optimization. If the deviation between the energy centroid coordinates of the laser chip spot and the target physical center coordinates of the beam quality analyzer (50) is less than the preset following dead zone threshold, the alignment is determined to be complete, the three-dimensional coordinates of the current position are recorded, and the second three-dimensional coordinates are obtained. The linear propagation equation of the laser chip beam in three-dimensional space is established based on the first three-dimensional coordinates and the second three-dimensional coordinates.

3. The laser chip far-field divergence angle verification device according to claim 2, characterized in that, The formula for calculating the linear transmission equation is as follows: In the formula: x is the X-axis coordinate parameter; y is the Y-axis coordinate parameter; z is the Z-axis coordinate parameter; k x k y This represents the directional deviation angle slope of the laser chip's optical axis.

4. The laser chip far-field divergence angle verification device according to claim 2, characterized in that, The two-dimensional optimization includes coarse localization and step approximation.

5. The laser chip far-field divergence angle verification device according to claim 1, characterized in that, When triggering the beam quality analyzer (50) to perform image acquisition, the method further includes: The target integration time or gain of the beam quality analyzer is adjusted based on the coordinate parameters of each sampling point on the Z-axis.

6. The laser chip far-field divergence angle verification device according to claim 5, characterized in that, The formula for calculating the target integration time is: In the formula: d is the coordinate parameter of the sampling point on the Z-axis; For reference distance.

7. The laser chip far-field divergence angle verification device according to any one of claims 1 to 6, characterized in that, The controller is also configured to: The far-field divergence angle is compared with a preset threshold value, and a qualified or unqualified result is output.

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