光掩模版设计图形的处理方法、处理装置及存储介质
By dynamically adjusting the OPC strategy and MRC constraints based on the density of the underlying pattern, the problem of declining imaging quality in the lithography process in the existing technology is solved, and the consistency of the photomask design pattern and the reliability of the lithography process are improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NEXCHIP SEMICON CO LTD
- Filing Date
- 2026-06-22
- Publication Date
- 2026-07-17
AI Technical Summary
Existing optical proximity correction (OPC) models and OPC methods cannot accurately characterize the nonlinear effects related to the topography of the underlying layer caused by local focus shift, resulting in a decrease in the imaging quality of the lithography process. Furthermore, the fixed mask rule checking (MRC) constraint cannot balance the reliability of the lithography process with the correction capability of the OPC method.
By quantifying the density of the underlying pattern beneath the via layer, the OPC correction strategy and design MRC constraints are dynamically adjusted to achieve critical dimension correction and local MRC constraints for vias, thereby generating corrected design patterns.
It improves the consistency of photomask design patterns, reduces the problems of over-correction and/or under-correction in local areas of the design pattern, balances the reliability of the photolithography process and the correction capability of the OPC method, expands the process window and improves NILS performance.
Smart Images
Figure CN122410885A_ABST