一种单BJT支路高电源抑制比低温漂的带隙基准电路
By introducing a pre-regulator circuit and a feedback transistor into the bandgap reference circuit, combined with resistor adjustment, the problems of insufficient power supply rejection ratio and temperature drift in traditional bandgap reference circuits are solved, achieving high power supply rejection ratio and low temperature drift, which is suitable for ultra-low power IoT and SoC applications.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- UNIV OF ELECTRONICS SCI & TECH OF CHINA
- Filing Date
- 2026-05-28
- Publication Date
- 2026-07-17
AI Technical Summary
Traditional bandgap reference circuits suffer from insufficient power supply rejection ratio and temperature drift in low-power designs, making it difficult to meet the high-precision requirements of IoT and system-on-a-chip, and increasing chip area and cost.
A bandgap reference circuit with high power supply rejection ratio and low temperature drift using a single BJT branch includes a pre-regulator circuit, a PTAT operational amplifier, and a single BJT branch. Through the combined feedback effect of the pre-regulator circuit and the feedback transistor, combined with resistor adjustment, the power supply rejection ratio is improved and the temperature drift is reduced.
It achieves a bandgap reference circuit with high power supply rejection ratio, low temperature drift and low power consumption, simplifies the circuit structure, improves accuracy and energy efficiency, and is suitable for ultra-low power IoT and SoC applications.
Smart Images
Figure CN122411697A_ABST