Memory device and method of reading thereof
By setting multiple word line signals to the same voltage value during the setup period and selecting and maintaining the selected word line signal at the selected voltage value during the read period, the latency problem of memory device read operation is solved, enabling fast continuous read operation and improving performance.
CN122417104APending Publication Date: 2026-07-17MACRONIX INTERNATIONAL CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- MACRONIX INTERNATIONAL CO LTD
- Filing Date
- 2025-04-22
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing memory devices require repeated setup, read, and restore operations when reading data, resulting in latency and reduced performance.
Method used
By setting multiple word line signals to the same voltage value during the setting period, and selecting and maintaining the selected word line signal at the selected voltage value and the unselected word line signal at the unselected voltage value during the reading period, continuous reading operation is achieved.
Benefits of technology
It improves the read operation speed of the memory device, reduces word line signal switching, and improves data acquisition efficiency.
✦ Generated by Eureka AI based on patent content.
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Abstract
本发明提供一种存储器装置及其读取方法。存储器装置例如为三维与非式闪存，且提供高性能以及高容量的储存介质。读取方法包括：在设定期间，设定多个字线信号为设定电压值，其中各字线信号为存储器子区块所共同接收；在多个读取期间，设定字线信号中的选中字线信号为选中电压值，设定字线信号中的至少一未选中字线信号为未选中电压值；以及，在各读取期间，选择各存储器子区块以执行读取操作，其中，读取期间为在设定期间之后的连续的多个时间区间。
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