Plasma processing apparatus and RF system
By employing pulsed RF power control in the plasma processing device to generate the waveforms of the source and bias RF signal, the problems of uneven etching and abnormal shape in high aspect ratio hole etching were solved, achieving high-efficiency plasma etching performance and ensuring the perpendicularity and precision of the etched shape.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2021-05-07
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies struggle to effectively control reaction types, free radicals, and byproducts during plasma etching of high aspect ratio holes, leading to uneven etching and abnormal shapes, especially at the bottom and sidewalls of the holes.
By applying RF power in a pulsed manner in the plasma processing device, the waveforms of the generator RF signal and the bias RF signal are controlled, and different power levels are supplied in different states, with the transition times staggered to control the physical quantities of plasma processing, such as ion energy, free radical flux, and the amount of byproducts.
It improves the processing performance of plasma etching, reduces etching inhomogeneity and shape abnormalities, realizes efficient processing of high aspect ratio holes, and ensures the perpendicularity and precision of the etched shape.
Smart Images
Figure CN122417752A_ABST