具有电激励调控结构的薄膜体声波谐振器及体声波滤波器
By introducing an electrically excited control structure into the thin-film bulk acoustic resonator, the local electric field intensity is adjusted, which solves the problems of parasitic vibration modes and stress concentration heating caused by the boundary ring structure, significantly improves the passband flatness and power capacity, and meets the requirements of high-performance communication.
CN122419408APending Publication Date: 2026-07-17GUANGZHOU AIFO LIGHT COMM TECH CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- GUANGZHOU AIFO LIGHT COMM TECH CO LTD
- Filing Date
- 2026-06-22
- Publication Date
- 2026-07-17
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Figure CN122419408A_ABST
Abstract
本发明公开了一种具有电激励调控结构的薄膜体声波谐振器及体声波滤波器，属于薄膜体声波谐振器技术领域，其中设置有边界环结构和电激励调控结构，电激励调控结构沿上下方向的投影，与边界环结构沿上下方向的投影重叠，或覆盖在顶电极的应力集中区域；电激励调控结构用于通过调节局部电场强度，以控制压电层的压电激励，从而抑制边界环结构诱发的寄生振动模式并调节整体热分布。本发明的具有电激励调控结构的薄膜体声波谐振器旨在解决现有技术中边界环结构诱发的寄生振动模式导致通带平整度恶化，以及应力集中区域局部发热严重、限制功率容量的问题，能够有效提高谐振器的功率容量和稳定性。
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