半导体结构、半导体存储器及其制作方法
By widening the gate structure and setting a cavity structure, the problem of electrical performance degradation caused by the diffusion of active metal atoms in SRAM devices is solved, thereby improving the reliability and electrical performance of the devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-06-17
- Publication Date
- 2026-07-17
AI Technical Summary
In existing SRAM devices, the diffusion of active metal atoms such as aluminum atoms leads to a decline in electrical performance and reliability issues, especially the severe threshold voltage mismatch at the junction of pull-up and pull-down transistors.
By widening the gate structure in the second transistor region and setting a cavity structure at the junction, a closed cavity is formed using the first barrier layer and the second work function layer, blocking the diffusion path of active metal atoms and optimizing the interface stability of the gate structure.
It effectively prevents the diffusion of active metal atoms from the pull-up transistor to the pull-down transistor, improving the electrical performance and reliability of SRAM devices and ensuring the performance and reliability of the pull-up transistor.
Smart Images
Figure CN122421333A_ABST