split gate transistor
By introducing a cross-shaped shielding gate structure into the split-gate transistor, the problem of insufficient voltage withstand capability of the split-gate transistor is solved, and the uniformity of electric field distribution and the improvement of device performance are achieved.
CN122421402APending Publication Date: 2026-07-17LONG-TEK ELECTRONIC TECH CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LONG-TEK ELECTRONIC TECH CO LTD
- Filing Date
- 2026-04-24
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
How to improve the breakdown voltage of split-gate transistors, especially how to solve the problem of insufficient breakdown voltage in existing technologies.
Method used
By introducing a cross-shaped shielding gate structure into the split-gate transistor, the unique shape of the shielding gate is used to modulate the electric field distribution, balance the charge distribution, reduce electric field spikes, enhance capacitive coupling effect, and optimize electric field uniformity.
Benefits of technology
This significantly improves the breakdown voltage of split-gate transistors, avoids breakdown caused by electric field concentration, and enhances the electrical performance and reliability of the device.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN122421402A_ABST
Abstract
本发明提供一种分裂栅晶体管。一种分裂栅晶体管，包括：外延层，所述外延层内包括沟槽，所述沟槽内填充绝缘层；栅极，所述栅极埋设于绝缘层内，通过绝缘层控制外延层中的沟道层；屏蔽栅，所述屏蔽栅设置在栅极下方，通过绝缘层调制外延层内的分裂栅晶体管的源极漂移区的电场分布，其特征在于，所述屏蔽栅的截面形状为十字形。本发明将屏蔽栅的截面形状设计为十字形，该形状的屏蔽栅拉进了中部区域的屏蔽栅与漂移区的距离，使中部的屏蔽栅作用更明显，因此能够使电场分布趋势更为平滑，避免因为电场集中分布而发生击穿现象。
Need to check novelty before this filing date? Find Prior Art