Substrate processing method
By using zoned processing and purification of gases in the substrate processing equipment, the problem of unreacted gas accumulation during the emission process is solved, resulting in more stable exhaust performance and equipment operation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JUSUNG ENG
- Filing Date
- 2021-05-17
- Publication Date
- 2026-07-17
AI Technical Summary
In substrate processing equipment, unreacted source gases can easily remain and accumulate during the emission process, leading to a decrease in the exhaust performance and stability of the exhaust unit, and potentially causing sparks or blockages.
A partitioned processing method is adopted, dividing the substrate processing space into first and second processing areas. Different gases and purification gases are sequentially injected through a gas injection unit. Combined with the rotation of the support unit, unreacted gases are prevented from mixing during the emission process. Purification gases are used to purify unreacted gases, and the reactivity is reduced through a decomposition mechanism.
It effectively reduces the generation of particulate matter, improves the performance and stability of exhaust gases, prevents blockage of the exhaust unit and the risk of sparks, and enhances the stability of the equipment.
Smart Images
Figure CN122421684A_ABST
Abstract
Description
[0001] This application is a divisional application of the invention patent application filed on May 17, 2021, with application number 202180041074.8 and the invention title "Substrate Processing Method". Technical Field
[0002] This invention relates to a substrate processing method for performing processes such as deposition and etching on a substrate. Background Technology
[0003] Generally, in order to manufacture solar cells, semiconductor devices, flat panel display devices, etc., it is necessary to form thin film layers, thin film circuit patterns, or optical patterns on a substrate. For this purpose, processing techniques are performed on the substrate, and examples of processing techniques include deposition processes that deposit thin films containing specific materials on the substrate, exposure processes that selectively expose a portion of the thin film using a photosensitive material, and etching processes that remove the selectively exposed portions of the thin film to form patterns.
[0004] This processing on the substrate is performed by a substrate processing apparatus. The substrate processing apparatus includes a chamber providing a processing space, a support unit supporting the substrate, a gas injection unit that injects gas towards the support unit, and an exhaust unit that discharges gas from the processing space. The substrate processing apparatus performs the processing on the substrate using source gas and reaction gas injected by the gas injection unit. The source gas and reaction gas are discharged through the exhaust unit. The exhaust unit is constructed with multiple exhaust pipes, each connected to the chamber. The exhaust unit may independently include exhaust pipes for discharging source gas and exhaust pipes for discharging reaction gas.
[0005] Therefore, unreacted source gases in the processing space should be completely discharged through the exhaust unit. These unreacted source gases contain highly reactive materials. Thus, when unreacted source gases remain and accumulate in the exhaust unit, or react with reactive gases discharged through the exhaust unit and deposit there, sparking or blockage can occur in the exhaust unit, potentially reducing its exhaust performance and stability. Summary of the Invention
[0006] Technical issues
[0007] The present invention addresses the above-mentioned problems and provides a substrate processing method that prevents unreacted source gases from remaining and accumulating in the exhaust unit during the gas emission process.
[0008] Technical solution
[0009] To achieve the above objectives, the present invention may include the following elements.
[0010] According to the substrate processing method of the present invention, a processing process is performed on a substrate supported by a support unit in a processing space divided into a first processing area and a second processing area.
[0011] The substrate processing method according to the present invention may include: sequentially injecting a first gas and a first purifying gas into a first processing region; and sequentially injecting a second purifying gas and a second gas reacting with the first gas into a second processing region. When the first gas is injected into the first processing region, the second purifying gas may be injected into the second processing region. When the second gas is injected into the second processing region, the first purifying gas may be injected into the first processing region.
[0012] The substrate processing method according to the present invention may include the steps of: injecting a first gas into a first processing region and injecting a second purified gas into a second processing region; and the steps of injecting the first purified gas into the first processing region and injecting a second gas that reacts with the first gas into the second processing region. The steps may be performed sequentially. When the first gas is injected into the first processing region, the second gas may not be injected into the second processing region. When the second gas is injected into the second processing region, the first gas may not be injected into the first processing region.
[0013] The substrate processing method according to the present invention may include the steps of: injecting a first gas into a first processing region, injecting a second purified gas into a second processing region, and discharging each of the first gas and the second purified gas; and the steps of injecting the first purified gas into the first processing region, injecting a second gas that reacts with the first gas into the second processing region, and discharging each of the first purified gas and the second gas. The steps may be performed sequentially. When the first gas is discharged from the first processing region, the second purified gas may be discharged from the second processing region. When the second gas is discharged from the second processing region, the first purified gas may be discharged from the first processing region.
[0014] The substrate processing method according to the present invention may include the steps of: injecting a first gas into a first processing region, injecting a second purified gas into a second processing region, and discharging each of the first gas and the second purified gas; and the steps of injecting the first purified gas into the first processing region, injecting a second gas that reacts with the first gas into the second processing region, and discharging each of the first purified gas and the second gas. The steps may be performed sequentially. When the first gas is discharged from the first processing region, the second gas may not be discharged from the second processing region. When the second gas is discharged from the second processing region, the first gas may not be discharged from the first processing region.
[0015] The substrate processing method according to the present invention may include the step of injecting a dividing gas for dividing a first processing region and a second processing region into a region between the first processing region and the second processing region.
[0016] The substrate processing method according to the present invention may include the step of rotating a support unit to move a substrate supported by the support unit between a first processing area and a second processing area.
[0017] In the substrate processing method according to the present invention, the step of rotating the support unit can be repeated.
[0018] Beneficial effects
[0019] According to the present invention, the following effects can be achieved.
[0020] This invention is implemented to prevent unreacted first gas from mixing with unreacted second gas during the emission of gas from the treatment space. Therefore, this invention can reduce the amount of particulate matter generated during the emission of gas from the treatment space. Furthermore, this invention can improve the emission performance of gas from the treatment space and enhance the stability of the emission process. Attached Figure Description
[0021] Figure 1 This is an exploded perspective view of the substrate processing apparatus according to the present invention.
[0022] Figure 2 For the substrate processing apparatus according to the present invention relative to Figure 1 A schematic diagram of the side section of the secant line II.
[0023] Figure 3 This is a plan view of a support unit in a substrate processing apparatus according to the present invention.
[0024] Figure 4 The substrate processing apparatus according to the present invention is along Figure 1 The side section diagram shown by section line II is used to describe the exhaust unit.
[0025] Figure 5 and Figure 6 A timing diagram is provided to illustrate the periods during which the substrate processing apparatus according to the present invention sprays each of the first gas, the first purifying gas, the second gas, and the second purifying gas, and the periods during which the substrate processing apparatus according to the present invention does not spray each of the first gas, the first purifying gas, the second gas, and the second purifying gas. Detailed Implementation
[0026] Hereinafter, embodiments of the substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
[0027] Please see Figure 1 and Figure 2 According to the present invention, the substrate processing apparatus 1 performs processing processes on a substrate S. The substrate S may be a glass substrate, a silicon substrate, a metal substrate, or a similar substrate. The substrate processing apparatus 1 according to the present invention can perform processing processes such as a deposition process to deposit a thin film on the substrate S and an etching process to remove a portion of the thin film deposited on the substrate S. Hereinafter, embodiments of processing processes performed by the substrate processing apparatus 1 according to the present invention will be mainly described; however, those skilled in the art can easily deduce from these embodiments another substrate processing apparatus according to the present invention that performs a processing process such as etching.
[0028] The substrate processing apparatus 1 according to the present invention may include a chamber 2, a support unit 3, a gas injection unit 4, a gas supply unit 5, and an exhaust unit 6.
[0029] <cavity>
[0030] Please see Figures 1 to 3 The chamber 2 provides a processing space 100. Within the processing space 100, processing processes such as deposition or etching can be performed on the substrate S. The processing space 100 within the chamber 2 may include a first processing region 110, a second processing region 120, and a third processing region 130 located between the first processing region 110 and the second processing region 120. A support unit 3 and a gas injection unit 4 may be installed within the chamber 2.
[0031] <Supporting Unit>
[0032] Please see Figures 1 to 3 The support unit 3 can be disposed in the chamber 2. The support unit 3 can support one substrate S, or can support multiple substrates S1~S3 (e.g., Figure 3 (As shown). In the case where the processing space 100 includes a first processing region 110, a second processing region 120, and a third processing region 130, a portion of the support unit 3 may be disposed in the first processing region 110, another portion of the support unit 3 may be disposed in the second processing region 120, and yet another portion of the support unit 3 may be disposed in the third processing region 130. In the case where multiple substrates S1 to S3 are supported by the support unit 3, some of the multiple substrates S1 to S3 may be disposed in the first processing region 110, and other substrates may be supported by the support unit 3 to be disposed in the second processing region 120.
[0033] The support unit 3 can rotate relative to the support shaft 30 of the support unit 3 within the chamber 2 (e.g., Figure 3(As shown). Based on the rotation of the support unit 3, the substrate S supported by the support unit 3 can be moved to different processing areas in the chamber 2. When the support unit 3 rotates, some of the multiple substrates S1 to S3 can move from the first processing area 110 through the third processing area 130 to the second processing area 120, and can again move from the second processing area 120 through the third processing area 130 to the first processing area 110. The rotation of the support unit 3 can be repeatedly stopped and started, or can be continuously started without stopping. Therefore, the substrate S supported by the support unit 3 can be moved to different processing areas by repeatedly performing stop operations and move operations, or can be continuously moved without stopping.
[0034] <Gas Injection Unit>
[0035] Please see Figures 1 to 3 Gas injection unit 4 injects gas toward support unit 3. Gas injection unit 4 can be connected to gas supply unit 5. Therefore, gas injection unit 4 can inject gas supplied from gas supply unit 5 toward support unit 3. Gas injection unit 4 can be positioned relative to substrate support unit 3. Processing space 100 can be disposed between gas injection unit 4 and support unit 3. Gas injection unit 4 can be coupled to chamber cover 20. Chamber cover 20 is coupled to chamber 2 to cover the top of chamber 2.
[0036] The gas injection unit 4 may include a first injection unit 41 and a second injection unit 42.
[0037] The first injection unit 41 injects gas into the first processing area 110. The first processing area 110 may correspond to a portion of the processing space 100. The first injection unit 41 may be disposed on and separate from the support unit 3. In this case, the first processing area 110 may be the area between the first injection unit 41 and the support unit 3. The first injection unit 41 may inject a first gas G1 and a first purified gas PG1 into the first processing area 110. The first gas G1 may be the source gas. The first purified gas PG1 may be an inert gas, such as argon (Ar).
[0038] Therefore, the processing using the first gas G1 can be performed on the substrate S disposed in the first processing region 110. When the first gas G1 is the source gas for reacting with the reactive gas to deposit a thin film, the processing can be a process that causes the source gas to be adsorbed onto the surface of the substrate S. Furthermore, the first purifying gas PG1 can purify the first gas G1 in the first processing region 110 that has not been adsorbed onto the substrate S. When some of the multiple substrates S1 to S3 supported by the support unit 3 are disposed in the first processing region 110, the first gas G1 and the first purifying gas PG1 ejected from the first ejection unit 41 can be sequentially ejected onto the substrates S1 and S2.
[0039] The second injection unit 42 injects gas into the second processing region 120. The second processing region 120 may correspond to a portion of the processing space 100. The second injection unit 42 may be disposed on and separate from the support unit 3. In this case, the second processing region 120 may be the region between the second injection unit 42 and the support unit 3.
[0040] The second injection unit 42 can inject the second gas G2 and the second purified gas PG2 into the second processing area 120. The second gas G2 can be the source gas, and in this case, the first gas G1 can be the reactant gas. The second purified gas PG2 can be an inert gas, such as argon. The second injection unit 42 can be connected to the gas supply unit 5.
[0041] Therefore, the processing using the second gas G2 can be performed on the substrate S disposed in the second processing region 120. In the case where the second gas G2 reacts with the first gas G1 to form a thin film, the processing can be a process in which the first gas G1 reacts with the second gas G2 adsorbed onto the substrate S to form a thin film on the surface of the substrate S. Furthermore, the second purifying gas PG2 can additionally purify the first gas G1 remaining on the surface of the substrate S in the second processing region 120, or it can purify the second gas G2 that has not reacted with the first gas G1. In the case where some substrates S1 and S2 of the plurality of substrates S1 to S4 supported by the support unit 3 are disposed in the first processing region 110, some other substrates S3 and S4 can be disposed in the second processing region 120. The second gas G2 and the second purifying gas PG2 ejected from the second ejection unit 42 can be ejected onto some other substrates S3 and S4. The second ejection unit 42 can sequentially eject the second purifying gas PG2 and the second gas G2.
[0042] The gas injection unit 4 may further include a third injection unit 43.
[0043] The third injection unit 43 injects gas into the third processing region 130. The third processing region 130 may correspond to a portion of the processing space 100. The third processing region 130 may be the region between the first processing region 110 and the second processing region 120. The third injection unit 43 may be disposed on and separate from the support unit 3. The third injection unit 43 may be disposed between the first injection unit 41 and the second injection unit 42.
[0044] The third injection unit 43 can inject division gas into the third processing region 130. The division gas can be an inert gas, such as argon. Because the third injection unit 43 injects the division gas into the third processing region 130, the first processing region 110 and the second processing region 120 can be spatially independent of each other, so that the gas will not mix between the first processing region 110 and the second processing region 120. The third injection unit 43 can be connected to the gas supply unit 5. In the case where some substrates S1 and S2 of the plurality of substrates S1 to S4 supported by the support unit 3 are disposed in the first processing region 110 and some other substrates S3 and S4 can be disposed in the second processing region 120, the third injection unit 43 can inject the division gas into the space between the substrates S1 and S2 disposed in the first processing region 110 and the substrates S3 and S4 disposed in the second processing region 120.
[0045] <Gas Supply Unit>
[0046] Please see Figures 1 to 3 The gas supply unit 5 supplies gas to the gas injection unit 4. The gas supply unit 5 can supply the gas injection unit 4 with a first gas G1, a first purified gas PG1, a second gas G2, and a second purified gas PG2. When the gas injection unit 4 injects dividing gas, the gas supply unit 5 can additionally supply dividing gas to the gas injection unit 4. In this case, the gas supply unit 5 can intermittently or continuously supply dividing gas to the third injection unit 43 while the processing is being performed on the substrate S.
[0047] <Exhaust Unit>
[0048] Please see Figures 1 to 4 The exhaust unit 6 discharges gas from the processing space 100. The exhaust unit 6 can be coupled to the chamber 2 to communicate with the interior of the chamber 2.
[0049] The exhaust unit 6 may include a first exhaust port 61, a second exhaust port 62, a first exhaust component 63, a second exhaust component 64, and an integrated component 65.
[0050] The first exhaust port 61 and the second exhaust port 62 can be formed as multiple exhaust ports in the chamber 2. The first exhaust port 61 can be formed in the chamber 2 to exhaust the first processing area 110. The second exhaust port 62 can be formed in the chamber 2 to exhaust the second processing area 120.
[0051] A first exhaust member 63 may be provided for venting the first processing area 110 through a first exhaust port 61. Gas injected into the first processing area 110 may be discharged to the outside of the chamber 2 through the first exhaust port 61 and the first exhaust member 63. One side of the first exhaust member 63 may be coupled to the first exhaust port 61 formed in the chamber 2, and the other side of the first exhaust member 63 may be coupled to the integrated member 65.
[0052] A second exhaust member 64 may be provided for venting the second processing area 120 through a second exhaust port 62. Gas injected into the second processing area 120 may be discharged to the outside of the chamber 2 through the second exhaust port 62 and the second exhaust member 64. One side of the second exhaust member 64 may be coupled to the second exhaust port 62 formed in the chamber 2, and the other side of the second exhaust member 64 may be coupled to the integrated member 65.
[0053] The integrated component 65 is connected to each of the first exhaust component 63 and the second exhaust component 64. Gases emitted through the first exhaust component 63 and the second exhaust component 64 can be mixed in the integrated component 65 and can be emitted. Each of the integrated component 65, the second exhaust component 64, and the first exhaust component 63 can be implemented using a hose, pipe, or the like.
[0054] When the first gas G1 is injected into the first processing area 110 and the second gas G2 is injected into the second processing area 120, the unreacted gas of the first gas G1 can be discharged from the chamber 2 through the first exhaust member 63, and the unreacted gas of the second gas G2 can be discharged from the chamber 2 through the second exhaust member 64.
[0055] In this case, when the first gas G1 is emitted from the first exhaust member 63 and the second gas G2 is emitted from the second exhaust member 64, the first gas G1 and the second gas G2 can be mixed and react with each other in the integrated member 65. The reaction between the first gas G1 and the second gas G2 in the emission process may be an undesirable reaction and may be an unstable reaction. Because the resultant material of the reaction accumulates in the integrated member 65 and the emission pipe connected to the integrated member 65, the emission space may become narrower, thereby reducing emission performance. There may also be a risk of sparks being generated during the replacement of the emission pipe, which may lead to problems with the stability of equipment management and maintenance.
[0056] To solve this problem, the substrate processing apparatus 1 according to the present invention can be implemented in the following manner.
[0057] Please see Figures 1 to 6 When the first injection unit 41 supplies the first gas G1 to the substrate S supported by the support unit 3 of the first processing area 110, the second injection unit 42 can supply the second purified gas PG2 to the substrate S supported by the support unit 3 of the second processing area 120.
[0058] Therefore, the adsorption process using the first gas G1 can be performed in the first processing region 110, and the purification process for purifying the surface of the substrate S disposed in the second processing region 120 can be performed in the second processing region 120 using the second purification gas PG2. The first gas G1 can be discharged through the first exhaust member 63 and the first exhaust port 61 formed in the bottom space of the chamber 2 corresponding to the first processing region 110. The second purification gas PG2 can be discharged through the second exhaust member 64 and the second exhaust port 62 formed in the bottom space of the chamber 2 corresponding to the second processing region 120. At this time, since the second gas G2 is not injected into the processing space 100 of the chamber 2, the second gas G2 may not flow into the first exhaust member 63 and the second exhaust member 64, or the amount of the second gas G2 flowing into the first exhaust member 63 and the second exhaust member 64 may be reduced.
[0059] The first exhaust component 63 may include a decomposition mechanism 60 for decomposing the first gas G1 to reduce reactivity (e.g., Figure 4 (As shown). For example, a first gas G1 containing highly reactive amine groups can be decomposed when passing through the decomposition mechanism 60, or the amine groups of the first gas G1 can be removed, thereby reducing the reactivity of the first gas G1 to the second gas G2.
[0060] The first gas G1 and the second purified gas PG2, which are produced by the first exhaust component 63 and the second exhaust component 64, can be mixed in the integrated component 65 and discharged by an exhaust pump (not shown) through a collection mechanism (not shown).
[0061] Despite contact with the second gas G2, the unreacted first gas G1 in the first treatment zone 110 can still be emitted through the emission process without any reaction.
[0062] Therefore, the substrate processing apparatus 1 according to the present invention can reduce the amount of particles generated in the integrated member 65, thereby improving stability.
[0063] Please see Figures 1 to 6 When the second injection unit 42 supplies the second gas G2 to the substrate S supported by the support unit 3 of the second processing area 120, the first injection unit 41 can supply the first purified gas PG1 to the substrate S supported by the support unit 3 of the first processing area 110.
[0064] Therefore, the process of purifying the first gas G1 using the first purification gas PG1 can be carried out in the first processing region 110, and the reaction process using the second gas G2 can be carried out in the second processing region 120. In this case, when the first gas G1 is adsorbed on the surface of the substrate S disposed in the second processing region 120, the second gas G2 can react with the adsorbed first gas G1 to form a thin film on the surface of the substrate S.
[0065] The first purified gas PG1 can be discharged through the first exhaust member 63 and the first exhaust port 61 formed in the bottom space of the chamber 2 corresponding to the first processing area 110. The second gas G2 can be discharged through the second exhaust member 64 and the second exhaust port 62 formed in the bottom space of the chamber 2 corresponding to the second processing area 120. At this time, since the first gas G1 is not injected into the processing space 100 of the chamber 2, the first gas G1 may not flow into the first exhaust member 63 and the second exhaust member 64, or the amount of second gas G2 flowing into the first exhaust member 63 and the second exhaust member 64 may be reduced.
[0066] The first purified gas PG1 and the second gas G2, which are produced by the first exhaust component 63 and the second exhaust component 64, can be mixed in the integrated component 65 and discharged by the exhaust pump via the collection mechanism.
[0067] Despite contact with the first gas G1, the unreacted second gas G2 in the second processing zone 120 can still be emitted through the emission process without any reaction.
[0068] Therefore, the substrate processing apparatus 1 according to the present invention can reduce the amount of particles generated in the integrated member 65, thereby improving stability.
[0069] Please see Figures 1 to 6 The substrate processing apparatus 1 according to the present invention may further include a rotating unit 7.
[0070] Rotating unit 7 rotates supporting unit 3. Rotating unit 7 allows supporting unit 3 to rotate relative to supporting shaft 30. Rotating unit 7 allows supporting unit 3 to rotate, causing at least one substrate S supported by supporting unit 3 to move between first processing region 110 and second processing region 120. Based on the rotation of supporting unit 3, at least one substrate S supported by supporting unit 3 can sequentially pass through first processing region 110, third processing region 130, second processing region 120, and third processing region 130. The rotation of supporting unit 3 can be performed intermittently, and the speed of supporting unit 3 can be adjusted. When at least one substrate S supported by supporting unit 3 is disposed in first processing region 110 and first gas G1 or first purified gas PG1 is injected into first processing region 110, supporting unit 3 can stop or its rotation speed can be reduced. Furthermore, when at least one substrate S is disposed in second processing region 120 and second purified gas PG2 or second gas G2 is injected from second processing region 120, supporting unit 3 can stop or its rotation speed can be reduced. When at least one substrate S supported by the support unit 3 passes through the third processing area 130, the rotation of the support unit 3 may not stop.
[0071] Furthermore, the substrate processing apparatus 1 according to the invention can be implemented to perform processing in a state where at least one substrate S is disposed only in one of the first processing region 110 and the second processing region 120. This will be described in detail below.
[0072] First, such as Figure 5 As shown, when at least one substrate S is positioned in the first processing area 110 as the rotation unit 7 stops the rotation of the support unit 3, a first gas G1 can be injected into the first processing area 110, thus enabling an adsorption process. At this time, a second purified gas PG2 can be injected into the second processing area 120. Therefore, the first gas G1 and the second purified gas PG2 can be discharged to the exhaust unit 6.
[0073] Next, after the first gas G1 is stopped from being injected into the first processing zone 110, the first purified gas PG1 can be injected into the first processing zone 110. Therefore, the first gas G1 can be purified from the first processing zone 110. At this time, the second purified gas PG2 can be injected into the second processing zone 120. Therefore, the first purified gas PG1 and the second purified gas PG2 can be discharged to the exhaust unit 6. Figure 5 The illustration shows that when the first gas G1 is stopped being injected into the first processing area 110, the second purified gas PG2 is stopped being injected into the second processing area 120. However, the present invention is not limited thereto, and when the first gas G1 and the first purified gas PG1 are sequentially injected from the first processing area 110, the second purified gas PG2 can be continuously injected into the second processing area 120.
[0074] Next, after stopping the sequential injection of the first gas G1 and the first purified gas PG1 into the first processing region 110 and stopping the injection of the second purified gas PG2 into the second processing region 120, the rotating unit 7 can rotate the supporting unit 3. Therefore, at least one substrate S disposed in the first processing region 110 can move from the first processing region 110 through the third processing region 130 to the second processing region 120. Figure 5 As shown, when at least one substrate S is positioned in the second processing region 120 as the rotation unit 7 stops the rotation of the support unit 3, a deposition process can be performed by injecting a second gas G2 into the second processing region 120. At this time, a first purifying gas PG1 can be injected into the first processing region 110. Therefore, the second gas G2 and the first purifying gas PG1 can be discharged to the exhaust unit 6.
[0075] Next, after the second gas G2 is stopped from being injected into the second processing zone 120, the second purified gas PG2 can be injected into the second processing zone 120. Therefore, the second gas G2 can be purified from the second processing zone 120. At this time, the first purified gas PG1 can be injected into the first processing zone 110. Therefore, the second purified gas PG2 and the first purified gas PG1 can be discharged to the exhaust unit 6. Figure 5 The illustration shows that the first purified gas PG1 is stopped being injected into the first processing area 110 at the same time as the second gas G2 is stopped being injected into the second processing area 120. However, the present invention is not limited thereto, and the first purified gas PG1 can be continuously injected into the first processing area 110 while the second gas G2 and the second purified gas PG2 are sequentially injected from the second processing area 120.
[0076] Next, after stopping the sequential injection of the second gas G2 and the second purified gas PG2 into the second processing region 120 and stopping the injection of the first purified gas PG1 into the first processing region 110, the rotating unit 7 can rotate the support unit 3. Therefore, at least one substrate S disposed in the second processing region 120 can be moved from the second processing region 120 to the first processing region 110 through the third processing region 130.
[0077] By repeating the above process, the substrate processing apparatus 1 according to the present invention can perform a processing process on at least one substrate S. The embodiments described above demonstrate that the processing process is performed when at least one substrate S is disposed only in one of the first processing region 110 and the second processing region 120. However, the substrate processing apparatus 1 according to the present invention can be implemented to perform the processing process when at least one substrate S is disposed in the first processing region 110 and at least one substrate S is disposed in the second processing region 120. In this case, as... Figure 6 As shown, the second purified gas PG2, the second purified gas PG2, the second gas G2 and the second purified gas PG2 can be sequentially sprayed from the second processing area 120, and at the same time the first gas G1, the first purified gas PG1, the first purified gas PG1 and the first purified gas PG1 can be sequentially sprayed from the first processing area 110, and then the rotating unit 7 can rotate the support unit 3.
[0078] Hereinafter, embodiments of the substrate processing method according to the present invention will be described in detail with reference to the relevant drawings.
[0079] Please see Figures 1 to 6 The substrate processing method according to the present invention performs a processing process on a substrate S. The substrate processing method according to the present invention can perform a deposition process and an etching process on the substrate S. Hereinafter, embodiments of the deposition process according to the substrate processing method of the present invention will be mainly described, but those skilled in the art can easily deduce another substrate processing method according to the present invention that performs a process such as etching. The substrate processing method according to the present invention can be performed using the substrate processing apparatus 1 according to the present invention.
[0080] The substrate processing method according to the present invention can perform processing on a substrate S in a processing space 100 divided into a first processing region 110 and a second processing region 120. The substrate processing method according to the present invention may include the following steps.
[0081] First, gas can be injected into the first processing area 110. This step can be performed by using a first injection unit 41 to inject gas into the first processing area 110. The step of injecting gas into the first processing area 110 may include sequentially injecting a first gas and a first purified gas into the first processing area. Because the first gas G1 is injected into the first processing area 110, the adsorption process using the first gas G1 can be performed on at least one substrate S disposed in the first processing area 110. Because the first purified gas PG1 is injected into the first processing area 110, the first gas G1 that was not adsorbed onto the substrate S can be purified from the first processing area 110.
[0082] Next, when the first gas G1 is injected into the first processing region 110, the second purified gas PG2 can be injected into the second processing region 120. This step can be performed by using the second injection unit 42 to inject the second purified gas PG2 into the second processing region 120 while the first injection unit 41 injects the first gas G1 into the first processing region 110. When the first gas G1 is discharged from the first processing region 110 to the first exhaust member 63, the second purified gas PG2 can be discharged from the second processing region 120 to the second exhaust member 64. Therefore, unreacted first gas G1 and second purified gas PG2 can be mixed in the integrated member 65, and thus the substrate processing method according to the invention can reduce the amount of particulate matter generated in the process of emitting gases from each of the first processing region 110 and the second processing region 120, thereby improving stability.
[0083] Next, when the second gas G2 is injected into the second processing region 120, the first purified gas PG1 can be injected into the first processing region 110. When the second injection unit 42 injects the second gas G2 into the second processing region 120, this step can be performed by using the first injection unit 41 to inject the first purified gas PG1 into the first processing region 110. Because the second gas G2 is injected into the second processing region 120, a deposition process can be performed on at least one substrate S disposed in the second processing region 120. The deposition process can be a process of depositing a thin film through the reaction between the second gas G2 adsorbed onto the substrate S and the first gas G1. When the second gas G2 is discharged from the second processing region 120 to the second exhaust member 64, the first purified gas PG1 can be discharged from the first processing region 110 to the first exhaust member 63. Therefore, the unreacted second gas G2 and the first purified gas PG1 can be mixed in the integrated component 65, thus the substrate processing method according to the present invention can reduce the amount of particulates generated in the process of emitting gases from each of the first processing region 110 and the second processing region 120, thereby improving stability.
[0084] Therefore, the step of injecting gas into the first processing area can be performed sequentially to inject the first gas into the first processing area and to inject the first purified gas into the first processing area, thereby purifying the first gas.
[0085] Furthermore, the step of injecting gas into the second processing area can be performed sequentially as follows: when the first gas is injected into the first processing area, the second purified gas is injected into the second processing area; and when the first purified gas is injected into the first processing area, the second gas is injected into the second processing area.
[0086] Therefore, in the process of emitting gases from each of the first and second processing regions, the substrate processing method according to the invention substantially prevents unreacted first gas G1 and unreacted second gas G2 from mixing in the integrated member 65. Thus, the substrate processing method according to the invention reduces the amount of particulate matter generated in the process of emitting gases from each of the first and second processing regions, thereby improving stability.
[0087] Please see Figures 1 to 6 The substrate processing method according to the present invention may include the step of injecting a dividing gas into a region between a first processing region and a second processing region. This step can be performed by using a third injection unit 43 to inject the dividing gas into a third processing region 130. Therefore, the substrate processing method according to the present invention can prevent the gas injected into the first processing region 110 from mixing with the gas injected into the second processing region 120.
[0088] Please see Figures 1 to 6 The substrate processing method according to the present invention may include the step of rotating the support unit. This step may be performed by rotating the support unit 3 to move at least one substrate S supported by the support unit 3 between the first processing region 110 and the second processing region 120.
[0089] The substrate processing method according to the present invention can be implemented to perform the processing process in a state where at least one substrate S is disposed only in one region of the first processing region 110 and the second processing region 120. In this case, as Figure 5 As shown, with at least one substrate S1 disposed in the first processing region 110, the step of injecting a second purified gas into the second processing region can be performed while the first gas and the first purified gas are sequentially injected into the first processing region. Next, the at least one substrate S can be moved from the first processing region 110 to the second processing region 120 via the third processing region 130 by rotating the support unit. With at least one substrate S1 disposed in the second processing region 120, the step of injecting a first purified gas into the first processing region can be performed while the second gas and the second purified gas are sequentially injected into the second processing region. By repeating these steps, the substrate processing method according to the present invention can perform processing on at least one substrate S.
[0090] The substrate processing method according to the present invention can be implemented to perform the processing process in a state where at least one substrate S is disposed in a first processing region 110 and at least one substrate S is disposed in a second processing region 120. In this case, as Figure 6As shown, with at least one substrate S1 disposed in each of the first processing region 110 and the second processing region 120, the step of injecting a second purified gas into the second processing region can be performed while the first gas and the first purified gas are sequentially injected into the first processing region. Next, the step of injecting the first purified gas into the first processing region can be performed while the second gas and the second purified gas are sequentially injected into the second processing region. Therefore, an adsorption process can be performed on at least one substrate S disposed in the first processing region 110, and a deposition process can be performed on at least one substrate S disposed in the second processing region 120. Next, by rotating the support unit, at least one substrate S can move from the first processing region 110 to the second processing region 120 via the third processing region 130, and at least one substrate S can move from the second processing region 120 to the first processing region 110 via the third processing region 130. By repeating this step, the substrate processing method according to the present invention can perform processing processes on multiple substrates S.
[0091] The present invention described above is not limited to the embodiments and related drawings described above, and those skilled in the art will clearly recognize that various modifications, variations and substitutions can be made without departing from the spirit and scope of the present invention.
[0092] [Symbol Explanation]
[0093] 1: Substrate processing equipment
[0094] 2: Chamber
[0095] 3: Support Unit
[0096] 4: Gas injection unit
[0097] 5: Gas supply unit
[0098] 6: Exhaust unit
[0099] 7: Rotating Unit
[0100] 20: Chamber cover
[0101] 30: Support shaft
[0102] 41: First injection unit
[0103] 42: Second Injection Unit
[0104] 43: Third Injection Unit
[0105] 60: Disassembly Mechanism
[0106] 61: First exhaust port
[0107] 62: Second exhaust port
[0108] 63: First exhaust component
[0109] 64: Second exhaust component
[0110] 65: Integrated Components
[0111] 100: Processing space
[0112] 110: First processing area
[0113] 120: Second Processing Area
[0114] 130: Third Processing Area
[0115] S, S1~S4: substrate
[0116] G1: First Gas
[0117] G2: Second gas
[0118] PG1: First purified gas
[0119] PG2: Secondary purified gas
Claims
1. A substrate processing method, comprising performing a processing process on a substrate supported by a support unit in a processing space divided into a first processing region and a second processing region, the substrate processing method comprising: The steps of sequentially injecting the first gas and the first purified gas into the first processing area; and The step of sequentially injecting the second purified gas and the second gas that reacts with the first gas into the second processing area; in, When the first gas is injected into the first processing area, the second purified gas is injected into the second processing area, and When the second gas is injected into the second processing area, the first purified gas is injected into the first processing area.
2. A substrate processing method, comprising performing a processing process on a substrate supported by a support unit in a processing space divided into a first processing region and a second processing region, the substrate processing method comprising: The steps of injecting a first gas into the first processing area and injecting a second purified gas into the second processing area; and The steps of injecting a first purified gas into the first processing area and injecting a second gas that reacts with the first gas into the second processing area. in, The steps are performed in sequence. When the first gas is injected into the first processing area, the second gas is not injected into the second processing area, and When the second gas is injected into the second processing area, the first gas is not injected into the first processing area.
3. A substrate processing method, comprising performing a processing process on a substrate supported by a support unit in a processing space divided into a first processing region and a second processing region, the substrate processing method comprising: The steps of injecting a first gas into the first processing area, injecting a second purified gas into the second processing area, and discharging each of the first gas and the second purified gas; and The steps of injecting a first purified gas into the first processing area, injecting a second gas that reacts with the first gas into the second processing area, and discharging each of the first purified gas and the second gas are as follows: in, The steps are performed in sequence. When the first gas is discharged from the first processing area, the second purified gas is discharged from the second processing area, and When the second gas is discharged from the second processing area, the first purified gas is discharged from the first processing area.
4. A substrate processing method, comprising performing a processing process on a substrate supported by a support unit in a processing space divided into a first processing region and a second processing region, the substrate processing method comprising: The steps of injecting a first gas into the first processing area, injecting a second purified gas into the second processing area, and discharging each of the first gas and the second purified gas; and The steps of injecting a first purified gas into the first processing area, injecting a second gas that reacts with the first gas into the second processing area, and discharging each of the first purified gas and the second gas are as follows: in, The steps are performed in sequence. When the first gas is discharged from the first processing area, the second gas is not discharged from the second processing area, and When the second gas is emitted from the second processing area, the first gas is not emitted from the first processing area.
5. The substrate processing method according to any one of claims 1 to 4, further comprising the step of injecting a dividing gas for dividing the first processing region and the second processing region into a region between the first processing region and the second processing region.
6. The substrate processing method according to any one of claims 1 to 4, further comprising the step of rotating the support unit to move at least one substrate supported by the support unit between the first processing region and the second processing region.
7. The substrate processing method of claim 6, wherein the step of rotating the support unit is repeated.