Liquid metal alloy feed for ion implantation
By using a liquid metal alloy precursor composition as an ion source, the problems of long heating and cooling times and incomplete material evaporation in the prior art are solved, achieving efficient ion implantation and stable beam current, and improving the ion source lifetime and the selectivity of implanted ions.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- AXCELIS TECHNOLOGIES INC
- Filing Date
- 2024-12-23
- Publication Date
- 2026-07-17
AI Technical Summary
In existing ion implantation technologies, conventional methods suffer from problems such as long heating and cooling times, incomplete material evaporation, introduction of unwanted atoms into the plasma, and unstable current, which lead to shortened ion source lifetime and unstable implanted ion dose.
Using a liquid metal alloy precursor composition as an ion source, a homogeneous or heterogeneous liquid metal alloy is formed by heating, which is then ionized into an ion beam and injected into the workpiece. The homogeneous or heterogeneous liquid metal alloy ion source is formed in the arc chamber by a metal alloy composition with a eutectic melting point below 550°C, and then vaporized and ionized in the plasma to form a stable ion beam.
This method achieves efficient ion implantation, improves beam current stability and ion source lifetime, reduces unwanted byproducts, and enhances the selectivity of implanted ions and the controllability of workpiece processing.
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Figure CN122422975A_ABST