Plasma processing apparatus
By introducing a counter and processing unit into the plasma processing device, and adjusting parameters such as radio frequency power, gas flow rate, and DC voltage in stages, the problem of unstable substrate processing caused by component consumption in the chamber was solved, and the component life was extended and the processing effect was stabilized.
CN122422976APending Publication Date: 2026-07-17TOKYO ELECTRON LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2024-11-06
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In the prior art, the consumption of components within the chamber affects the plasma treatment effect on the substrate, especially the unstable tilt shape generated at the edge of the substrate over time.
Method used
By introducing a counter and a processing unit into the plasma processing device, parameters such as radio frequency power, gas flow rate, and DC voltage are changed in stages according to the usage time of the components, so as to extend the life of the components and stabilize the processing effect.
Benefits of technology
It effectively reduces the impact of component consumption within the cavity on substrate processing, maintaining the shape stability and processing quality of the substrate edge area.
✦ Generated by Eureka AI based on patent content.
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Figure CN122422976A_ABST
Abstract
在等离子体处理装置中能够降低由于腔室内的部件消耗而导致基板的等离子体处理受到影响。等离子体处理装置具备：腔室；基板支撑部；边缘环；上部电极；第一气体供给部；射频电源；直流电源，构成为对边缘环施加直流电压；第一计数器，构成为响应于射频电源的操作时间而对第一时间进行计数，通过更换上部电极而重置第一时间；第二计数器，构成为响应于射频电源的操作时间而对第二时间进行计数，通过更换边缘环而重置第二时间；第一处理部，构成为响应于第一时间而阶段性地变更射频功率和第一气体中的至少一个；和第二处理部，构成为响应于第二时间而阶段性地变更直流电压。
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Citation Information
Patent Citations
Plasma processing device, processing method, and upper electrode structure
JP2021039924A