memory elements
By introducing a barrier layer made of amorphous material into the memory element, the problem of electrode element diffusion under high temperature conditions is solved, thereby improving the heat resistance and stability of the memory element.
CN122423318APending Publication Date: 2026-07-17SONY SEMICON SOLUTIONS CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SONY SEMICON SOLUTIONS CORP
- Filing Date
- 2024-12-20
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Under high temperature conditions, the electrode constituent elements of memory elements diffuse into the memory layer, leading to performance degradation.
Method used
A barrier layer made of amorphous material is introduced into the memory element and disposed between the second electrode and the memory section to prevent the diffusion of electrode elements.
Benefits of technology
It effectively prevents the diffusion of electrode elements, improves the heat resistance of memory elements, and ensures stability in high-temperature processes.
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Smart Images
Figure CN122423318A_ABST
Abstract
本发明防止电极的构成元素的扩散。该存储器元件具有存储部分、第一电极、第二电极和阻挡层。存储部分包括：存储层，该存储层是磁化方向可变的磁性层；参考层，该参考层是磁化方向不变的磁性层；以及第一非磁性层，第一非磁性层布置在存储层与参考层之间。第一电极和第二电极向存储部分施加写入电压和读取电压。阻挡层是布置在第二电极与存储部分之间的非磁性层并且包括非晶材料。
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