Detection device
By setting a shielding part covering the incident area and a shielding structure extending along the edge of the incident area in the detection device, the problem of increased dark current caused by charged particle incident is solved, and signal stability and gas residue suppression are achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HAMAMATSU PHOTONICS KK
- Filing Date
- 2024-08-27
- Publication Date
- 2026-07-17
AI Technical Summary
In existing detection devices, when charged particles are incident on the pn junction region, it leads to an increase in crystal defects, which causes an increase in dark current. Furthermore, the increase in reflected electrons causes the insulating part to become charged, further increasing the dark current.
The detection device is provided with a first shielding part and a second shielding part. The first shielding part covers the incident area and does not expose the insulating part when viewed from above. The second shielding part extends along the edge of the incident area to suppress charged particles from directly reaching the insulating part and to prevent reflected electrons from reaching the insulating part.
It effectively suppresses the charging of the insulation part, reduces the increase of dark current, ensures the stability of the output signal, and reduces gas residue in a vacuum environment.
Smart Images
Figure CN122423331A_ABST