Semiconductor manufacturing apparatus component
By using a double-layer ceramic plate structure and a highly corrosion-resistant bonding layer, the problems of insufficient corrosion resistance and power waste in components used in semiconductor manufacturing equipment are solved, plasma generation efficiency is improved, and a highly efficient semiconductor manufacturing process is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- NGK INSULATORS LTD
- Filing Date
- 2023-12-21
- Publication Date
- 2026-07-17
AI Technical Summary
Existing semiconductor manufacturing equipment components suffer from insufficient corrosion resistance, power waste, and low plasma generation efficiency when using metal bonding layers between ceramic plates and cooling plates.
The system employs a double-layer ceramic plate structure, using a first metal bonding layer as the RF electrode and a second bonding layer with high corrosion resistance and low thermal expansion coefficient formed by the TCB method. Combined with a metal-ceramic composite cooling plate, this ensures efficient power utilization and plasma generation efficiency.
It achieves high corrosion resistance, low power consumption, and high-efficiency plasma generation, avoiding defects caused by excessive wafer cooling and poor thermal expansion of the bonding layer, thus improving semiconductor manufacturing efficiency.
Smart Images
Figure CN122423364A_ABST
Abstract
Citation Information
Patent Citations
Wafer placement stand
WO2023037698A1