A semiconductor wafer chemical mechanical polishing control method and system

By real-time monitoring of wafer surface temperature and material removal status, and combining the relationship between oxidant decomposition rate and temperature, abnormal areas in the chemical mechanical polishing process are identified and compensated for. This solves the problem of wafer flatness and material removal rate fluctuations caused by unstable polishing parameters, thereby improving wafer yield and reducing production costs.

CN122425605APending Publication Date: 2026-07-21JIANGSU SANJING SEMICON MATERIALS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JIANGSU SANJING SEMICON MATERIALS CO LTD
Filing Date
2026-04-30
Publication Date
2026-07-21

AI Technical Summary

Technical Problem

In the existing chemical mechanical polishing process for semiconductor wafers, problems such as unstable polishing parameters, localized changes in the chemical activity of the polishing slurry, and uneven temperature distribution lead to substandard wafer flatness and fluctuations in material removal rate. Existing control methods are unable to address these issues in real time, resulting in a decrease in wafer yield and an increase in production costs.

Method used

By monitoring the temperature distribution and material removal status of the wafer surface in real time, abnormal areas of temperature and material removal rate are identified. By combining the relationship between the decomposition rate of oxidant in the polishing slurry and temperature, the cause of the abnormality is determined and targeted local chemical compensation is carried out, including replenishing the abnormal area with fresh polishing slurry or increasing the concentration of oxidant.

Benefits of technology

It effectively solves the problems of substandard wafer flatness and material removal rate fluctuations caused by unstable polishing parameters, improves wafer yield, reduces production costs, and avoids over-polishing and resource waste.

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Abstract

The present application relates to the technical field of semiconductor wafer chemical mechanical polishing control, and particularly relates to a semiconductor wafer chemical mechanical polishing control method and system, the method comprising the following steps: determining a wafer surface local area with both temperature abnormality and material removal rate abnormality as a wafer surface local area to be analyzed; determining the temperature corresponding to the wafer surface local area to be analyzed at a current sampling time, and determining the actual decomposition rate of the oxidizing agent in the wafer surface local area to be analyzed; judging whether the material removal rate abnormality of the wafer surface local area to be analyzed is mainly caused by the chemical activity attenuation of the oxidizing agent in the slurry; if the judgment is yes, quantifying the local chemical activity attenuation degree of the wafer surface local area to be analyzed; and performing targeted local chemical compensation on the wafer surface local area to be analyzed whose material removal rate abnormality is mainly caused by the chemical activity attenuation of the oxidizing agent in the slurry. The present application can improve the wafer yield.
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