A bidirectional polarization quantum dot electricity storage material for unlimited high-voltage energy storage and a preparation method thereof

Abstract

The application discloses a kind of bidirectional polarization quantum dot power storage materials for unlimited high voltage energy storage and preparation method thereof, belong to energy storage material technical field.Power storage material includes anodic polarization carbon quantum dot positive electrode material and cathodic polarization silicon oxide quantum dot negative electrode material, the surface of positive electrode material has directional positive charge trap, the surface of negative electrode material has directional negative charge trap, form stable built-in electric field by bidirectional polarization, realize 0.1V low voltage start and unlimited high voltage energy storage, energy density is square level with working voltage rise promotion.Preparation method includes two core steps of carbon quantum dot anodic polarization, silicon oxide quantum dot cathodic polarization, process is simple, controllability is strong, and prepared power storage material has excellent voltage resistance, strong charge capture ability, can be widely used in unlimited high voltage energy storage device, high voltage power supply and other fields, solve the technical pain points that existing power storage material voltage upper limit is low, energy density is insufficient.

Description

Technical Field

[0001] This invention belongs to the field of energy storage materials technology, which is an intersection of new materials and energy storage technology. In particular, it relates to a bidirectional polarized quantum dot energy storage material for infinite high voltage energy storage and its preparation method, which is suitable for the production of high voltage and high energy density energy storage devices. Background Technology

[0002] With the rapid development of aerospace, grid energy storage, pulsed power, and military equipment, increasingly higher requirements are being placed on the voltage level, energy density, power density, and safety of energy storage materials. Currently, existing energy storage materials face significant technical bottlenecks: traditional materials such as activated carbon, lithium-ion battery cathode materials, and ordinary quantum dot materials all have definite voltage limits, making it impossible to achieve unlimited high-voltage energy storage and difficult to adapt to high-voltage energy storage scenarios; furthermore, the energy storage process of most energy storage materials relies on traditional redox reactions, resulting in limited energy density. Under high-voltage operating environments, they are prone to performance degradation and material failure, further limiting their application in high-end fields.

[0003] Bidirectional polarization technology, as an effective means to enhance the charge storage capacity of materials, can significantly improve the charge density and voltage withstand performance of materials, showing great application potential in the field of energy storage materials. However, in existing technologies, bidirectional polarization technology is mostly applied to single materials or symmetrical polarization pairings, failing to achieve bidirectional asymmetric polarization pairings of carbon quantum dots and silicon oxide quantum dots. This results in the inability to form a stable built-in electric field, leading to insufficient charge trapping capacity and limited voltage withstand performance, making it difficult to achieve infinite high-voltage energy storage and failing to solve the core technical pain points of existing energy storage materials. Therefore, developing a bidirectional polarized quantum dot energy storage material that can achieve 0.1V low-voltage start-up, infinite high-voltage energy storage, and high energy density, along with a simple and highly controllable preparation method, has become an urgent technical problem to be solved in the field of energy storage materials. Summary of the Invention

[0004] To address the technical problems of existing energy storage materials, such as low voltage upper limit, insufficient energy density, performance degradation under high voltage, inability to achieve unlimited high-voltage energy storage, and complex and poorly controllable preparation processes, this invention provides a bidirectional polarized quantum dot energy storage material for unlimited high-voltage energy storage and its preparation method. The energy storage material can achieve low-voltage start-up of 0.1V, and has unlimited high-voltage energy storage, high energy density, and high voltage resistance. The preparation method is simple, highly controllable, and suitable for large-scale production, solving the technical pain points of existing energy storage materials and meeting the energy storage needs of high-end fields.

[0005] To achieve the above objectives, the technical solution of the present invention is as follows:

[0006] This invention provides a bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage, comprising:

[0007] Anodic polarization carbon quantum dot cathode material;

[0008] Cathode-polarized silicon dioxide quantum dot anode material;

[0009] The anodic polarized carbon quantum dot cathode material is obtained by anodic polarization of carbon quantum dots, and its surface has directional positive charge traps.

[0010] The cathode-polarized silicon oxide quantum dot anode material is obtained by cathode polarization of silicon oxide quantum dots, and its surface has directional negative charge traps.

[0011] The anodic polarized carbon quantum dot positive electrode material and the cathode polarized silicon oxide quantum dot negative electrode material are paired to form a built-in electric field.

[0012] The bidirectional polarized quantum dot energy storage material of this application consists of a anodic polarized carbon quantum dot positive electrode material and a cathodic polarized silicon oxide quantum dot negative electrode material. The two materials undergo differentiated polarization treatment to form directional charge traps and a stable built-in electric field. Specifically, the anodic polarized carbon quantum dot positive electrode material is obtained by anodic polarization of carbon quantum dots, and its surface has directional positive charge traps, enabling efficient capture of positive charges. The cathodic polarized silicon oxide quantum dot negative electrode material is obtained by cathodic polarization of silicon oxide quantum dots, and its surface has directional negative charge traps, enabling efficient capture of negative charges. The built-in electric field formed by the pairing of the two materials guides the directional movement of charges and stably stores them in the traps, ensuring stable charge storage. Simultaneously, it overcomes the limitations of traditional redox reactions, achieving unlimited high-voltage energy storage.

[0013] Compared to traditional energy storage materials that rely on redox reactions, the energy storage process of the energy storage material of this invention does not rely on traditional redox reactions and is not limited by the electrochemical window. Therefore, it can break through the voltage bottleneck of traditional devices and withstand infinitely high voltages. Moreover, the energy density increases quadratically with the increase of the operating voltage. At the same time, the high specific surface area of ​​carbon quantum dots and the high dielectric constant of silicon oxide quantum dots further enhance the charge trapping ability and voltage withstand performance of the material, ensuring that the material can work stably without performance degradation in the range from low voltage of 0.1V to infinitely high voltage.

[0014] Furthermore, the carbon quantum dots in the anodic polarized carbon quantum dot cathode material have a particle size of 2–10 nm and a specific surface area ≥800 m² / g; the silicon dioxide quantum dots in the cathode polarized silicon oxide quantum dot anode material have a particle size of 3–15 nm and a dielectric constant ≥30.

[0015] Furthermore, the mass ratio of carbon quantum dots to silicon oxide quantum dots is 1:0.3 to 2, and the ratio can be adjusted according to energy storage requirements.

[0016] Furthermore, the charge density of the anolyzed carbon quantum dot cathode material is ≥10.6 C / cm², the charge density of cathode-polarized silicon dioxide quantum dot anode material is ≥10 6 C / cm².

[0017] A method for preparing a bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage includes the following steps:

[0018] (1) Preparation of carbon quantum dot dispersion: Disperse carbon quantum dots in a solvent, add a binder, stir evenly to obtain carbon quantum dot dispersion;

[0019] (2) Preparation of carbon quantum dot electrode: The carbon quantum dot dispersion from step (1) is coated onto the current collector and dried to obtain the carbon quantum dot electrode;

[0020] (3) Anodic polarization treatment: The carbon quantum dot electrode obtained in step (2) is placed in a vacuum or inert gas atmosphere and subjected to anodic polarization treatment. The polarization temperature is 50-200℃, the polarization electric field strength is 1-30 kV / cm, and the polarization time is 10-120 min to obtain annodic polarized carbon quantum dot cathode material.

[0021] (4) Preparation of silica quantum dot slurry: Disperse silica quantum dots in a solvent, add binder, stir evenly to obtain silica quantum dot slurry;

[0022] (5) Preparation of silicon oxide quantum dot electrode: The silicon oxide quantum dot slurry obtained in step (4) is coated on the current collector and dried to obtain silicon oxide quantum dot electrode;

[0023] (6) Cathode polarization treatment: The silicon dioxide quantum dot electrode obtained in step (5) is placed in a vacuum or inert gas atmosphere and subjected to cathode polarization treatment. The polarization temperature is 40-180℃, the polarization electric field strength is 1-25 kV / cm, and the polarization time is 10-120 min to obtain cathode polarized silicon dioxide quantum dot anode material.

[0024] (7) Material pairing: Pair the positive electrode material obtained in step (3) with the negative electrode material obtained in step (6) to obtain bidirectional polarized quantum dot energy storage material.

[0025] Furthermore, the solvents in steps (1) and (4) are selected from one or more of deionized water, ethanol, and N-methylpyrrolidone.

[0026] Furthermore, the adhesive used in steps (1) and (4) is selected from polyvinylidene fluoride, polytetrafluoroethylene, and carboxymethyl cellulose.

[0027] Furthermore, in steps (3) and (6), the electric field direction remains stable during the polarization process. The direction of the anodic polarization electric field is from the current collector to the carbon quantum dot layer, and the direction of the cathodic polarization electric field is from the silicon oxide quantum dot layer to the current collector.

[0028] In this application, the preparation method adopts a stepwise polarization and precise temperature and field control process to sequentially complete the anodic polarization of carbon quantum dots and the cathodic polarization of silicon oxide quantum dots. Specifically, it includes seven steps: preparation of carbon quantum dot dispersion, preparation of carbon quantum dot electrode, anodic polarization, preparation of silicon oxide quantum dot slurry, preparation of silicon oxide quantum dot electrode, cathodic polarization, and material pairing. The process is simple and the parameters are controllable, which can effectively ensure the polarization stability and charge trapping ability of the energy storage material and is suitable for large-scale production.

[0029] The beneficial effects of this invention are: compared with the prior art:

[0030] Wide voltage adaptability range: It can achieve low voltage start-up of 0.1V and withstand infinitely high voltage, breaking through the voltage limit of traditional energy storage materials and adapting to high voltage energy storage scenarios of different voltage levels;

[0031] Excellent energy storage performance: Energy density increases quadratically with increasing operating voltage; the charge density of both anodic polarized carbon quantum dot cathode material and cathodic polarized silicon oxide quantum dot anode material is ≥10⁻ 6 C / cm², with strong charge trapping ability, meeting the demand for high energy density energy storage;

[0032] Outstanding pressure resistance: Through bidirectional polarization, a stable built-in electric field is formed, and the material exhibits no performance degradation or failure under high pressure conditions, demonstrating excellent pressure resistance.

[0033] The preparation process is simple: it adopts a stepwise polarization and precise temperature and field control process, with clear steps and controllable parameters. It does not require complex equipment, is suitable for large-scale production, and reduces production costs.

[0034] Wide range of applications: It can be widely used in many high-end fields such as unlimited high-voltage energy storage devices, high-voltage pulse power supplies, aerospace energy storage systems, grid high-voltage energy storage, and military equipment energy storage, and has extremely high practical value and market prospects. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the bidirectional polarized quantum dot energy storage material structure of the present invention.

[0036] Figure 2 This is a flowchart of the preparation process of the bidirectional polarized quantum dot energy storage material of the present invention. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0038] To achieve the above objectives, the technical solution of the present invention is as follows:

[0039] See Figure 1 As shown:

[0040] Example 1:

[0041] This embodiment provides a bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage, comprising:

[0042] Anodic polarization carbon quantum dot cathode material;

[0043] Cathode-polarized silicon dioxide quantum dot anode material;

[0044] The anodic polarized carbon quantum dot cathode material is obtained by anodic polarization of carbon quantum dots, and its surface has directional positive charge traps.

[0045] The cathode-polarized silicon oxide quantum dot anode material is obtained by cathode polarization of silicon oxide quantum dots, and its surface has directional negative charge traps.

[0046] The anodic polarized carbon quantum dot positive electrode material and the cathode polarized silicon oxide quantum dot negative electrode material are paired to form a built-in electric field.

[0047] The bidirectional polarized quantum dot energy storage material of this application consists of a anodic polarized carbon quantum dot positive electrode material and a cathodic polarized silicon oxide quantum dot negative electrode material. The two materials undergo differentiated polarization treatment to form directional charge traps and a stable built-in electric field. Specifically, the anodic polarized carbon quantum dot positive electrode material is obtained by anodic polarization of carbon quantum dots, and its surface has directional positive charge traps, enabling efficient capture of positive charges. The cathodic polarized silicon oxide quantum dot negative electrode material is obtained by cathodic polarization of silicon oxide quantum dots, and its surface has directional negative charge traps, enabling efficient capture of negative charges. The built-in electric field formed by the pairing of the two materials guides the directional movement of charges and stably stores them in the traps, ensuring stable charge storage. Simultaneously, it overcomes the limitations of traditional redox reactions, achieving unlimited high-voltage energy storage.

[0048] Compared to traditional energy storage materials that rely on redox reactions, the energy storage process of the energy storage material of this invention does not rely on traditional redox reactions and is not limited by the electrochemical window. Therefore, it can break through the voltage bottleneck of traditional devices and withstand infinitely high voltages. Moreover, the energy density increases quadratically with the increase of the operating voltage. At the same time, the high specific surface area of ​​carbon quantum dots and the high dielectric constant of silicon oxide quantum dots further enhance the charge trapping ability and voltage withstand performance of the material, ensuring that the material can work stably without performance degradation in the range from low voltage of 0.1V to infinitely high voltage.

[0049] Furthermore, the carbon quantum dots in the anodic polarized carbon quantum dot cathode material have a particle size of 2–10 nm and a specific surface area ≥800 m² / g; the silicon dioxide quantum dots in the cathode polarized silicon oxide quantum dot anode material have a particle size of 3–15 nm and a dielectric constant ≥30.

[0050] Furthermore, the mass ratio of carbon quantum dots to silicon oxide quantum dots is 1:0.3 to 2, and the ratio can be adjusted according to energy storage requirements.

[0051] Furthermore, the charge density of the anolyzed carbon quantum dot cathode material is ≥10. 6 C / cm², the charge density of cathode-polarized silicon dioxide quantum dot anode material is ≥10 6 C / cm².

[0052] Example 2:

[0053] See Figure 2 This embodiment provides a method for preparing a bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage, the preparation method including the following steps:

[0054] (1) Preparation of carbon quantum dot dispersion: Take carbon quantum dots with a particle size of 5 nm (specific surface area ≥800 m² / g), add deionized water as solvent, add polyvinylidene fluoride as binder, stir evenly (stirring speed 300 r / min, stirring time 30 min), coat the dispersion evenly on the surface of aluminum foil current collector, dry at 80℃ for 2h to obtain carbon quantum dot electrode;

[0055] (2) Anodic polarization treatment: The carbon quantum dot electrode is placed in a vacuum environment (vacuum degree ≤ 10⁻³ Pa), an electric field of 15 kV / cm is applied, the polarization temperature is controlled at 100℃, and the polarization time is 60 min. During the polarization process, the direction of the electric field is from the current collector to the carbon quantum dot layer. After cooling to room temperature, the anodic polarized carbon quantum dot cathode material (charge density ≥ 10⁻³ Pa) is obtained. 6 C / cm²);

[0056] (3) Preparation of silicon dioxide quantum dot slurry: Take silicon dioxide quantum dots with a particle size of 8 nm (dielectric constant ≥ 30), add ethanol as solvent, add carboxymethyl cellulose as binder, stir evenly (stirring speed 300 r / min, stirring time 30 min), coat the slurry evenly on the surface of copper foil current collector, dry at 80℃ for 2 h, and obtain silicon dioxide quantum dot electrode;

[0057] (4) Cathode polarization treatment: The silicon oxide quantum dot electrode is placed in a vacuum environment (vacuum degree ≤ 10⁻³ Pa), an electric field of 12 kV / cm is applied, the polarization temperature is controlled at 90℃, and the polarization time is 60 min. During the polarization process, the direction of the electric field is from the silicon oxide quantum dot layer to the current collector. After cooling to room temperature, the cathode-polarized silicon oxide quantum dot anode material (charge density ≥ 10⁻³ Pa) is obtained. 6 C / cm²);

[0058] (5) Material pairing: The anodic polarized carbon quantum dot positive electrode material obtained in step (2) and the cathode polarized silicon oxide quantum dot negative electrode material obtained in step (4) are paired in a mass ratio of 1:1 to obtain bidirectional polarized quantum dot energy storage material.

[0059] The energy storage material prepared in this embodiment can achieve low-voltage start-up of 0.1V, withstand infinitely high voltages, and its energy density increases quadratically with increasing operating voltage, with a charge density ≥10⁻⁻⁶. 6 With a strength of C / cm², it exhibits excellent pressure resistance and exhibits no performance degradation under high-pressure environments, making it suitable for fabricating infinite high-voltage energy storage devices.

[0060] Example 3

[0061] See Figure 2 This embodiment provides a method for preparing a bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage, the preparation method including the following steps:

[0062] (1) Preparation of carbon quantum dot dispersion: Take carbon quantum dots with a particle size of 2 nm (specific surface area ≥800 m² / g), add a mixed solvent of deionized water and ethanol (volume ratio 1:1), add polytetrafluoroethylene as a binder, stir evenly (stirring speed 250 r / min, stirring time 40 min), coat the dispersion evenly on the surface of aluminum foil current collector, dry at 80℃ for 2 h, and obtain carbon quantum dot electrode;

[0063] (2) Anodic polarization treatment: The carbon quantum dot electrode was placed in a nitrogen inert gas atmosphere, and an electric field of 1 kV / cm was applied. The polarization temperature was controlled at 50℃ and the polarization time was 120 min. During the polarization process, the direction of the electric field was from the current collector to the carbon quantum dot layer. After cooling to room temperature, the anodic polarized carbon quantum dot cathode material (charge density ≥10⁻) was obtained. 6 C / cm²);

[0064] (3) Preparation of silicon dioxide quantum dot slurry: Take silicon dioxide quantum dots with a particle size of 3 nm (dielectric constant ≥ 30), add N-methylpyrrolidone as solvent, add carboxymethyl cellulose as binder, stir evenly (stirring speed 250 r / min, stirring time 40 min), coat the slurry evenly on the surface of copper foil current collector, dry at 80℃ for 2h, and obtain silicon dioxide quantum dot electrode;

[0065] (4) Cathode polarization treatment: The silicon oxide quantum dot electrode was placed in a nitrogen inert gas atmosphere, and an electric field of 1 kV / cm was applied. The polarization temperature was controlled at 40℃ and the polarization time was 120 min. During the polarization process, the direction of the electric field was from the silicon oxide quantum dot layer to the current collector. After cooling to room temperature, the cathode-polarized silicon oxide quantum dot anode material (charge density ≥10⁻) was obtained. 6 C / cm²);

[0066] (5) Material pairing: The anodic polarized carbon quantum dot positive electrode material obtained in step (2) and the cathode polarized silicon oxide quantum dot negative electrode material obtained in step (4) are paired at a mass ratio of 1:0.3 to obtain bidirectional polarized quantum dot energy storage material.

[0067] The energy storage material prepared in this embodiment can achieve low-voltage start-up of 0.1V, withstand infinitely high voltages, and its energy density increases quadratically with increasing operating voltage, with a charge density ≥10⁻⁻⁶. 6 C / cm², with simple process and low cost, is suitable for mass production and can be used in the field of high voltage pulse power supply.

[0068] Example 4

[0069] See Figure 2 This embodiment provides a method for preparing a bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage, the preparation method including the following steps:

[0070] (1) Preparation of carbon quantum dot dispersion: Take carbon quantum dots with a particle size of 10 nm (specific surface area ≥800 m² / g), add N-methylpyrrolidone as solvent, add polyvinylidene fluoride as binder, stir evenly (stirring speed 350 r / min, stirring time 20 min), coat the dispersion evenly on the surface of aluminum foil current collector, dry at 80℃ for 2h to obtain carbon quantum dot electrode;

[0071] (2) Anodic polarization treatment: The carbon quantum dot electrode was placed in an argon inert gas atmosphere, and an electric field of 30 kV / cm was applied. The polarization temperature was controlled at 200℃ and the polarization time was 10 min. During the polarization process, the direction of the electric field was from the current collector to the carbon quantum dot layer. After cooling to room temperature, the anodic polarized carbon quantum dot cathode material (charge density ≥10⁻) was obtained.6 C / cm²);

[0072] (3) Preparation of silicon dioxide quantum dot slurry: Take silicon dioxide quantum dots with a particle size of 15 nm (dielectric constant ≥30), add ethanol as solvent, add polyvinylidene fluoride as binder, stir evenly (stirring speed 350 r / min, stirring time 20 min), coat the slurry evenly on the surface of copper foil current collector, dry at 80℃ for 2 h, and obtain silicon dioxide quantum dot electrode.

[0073] (4) Cathode polarization treatment: The silicon oxide quantum dot electrode is placed in an argon inert gas atmosphere, an electric field of 25 kV / cm is applied, the polarization temperature is controlled at 180℃, and the polarization time is 10 min. During the polarization process, the direction of the electric field is from the silicon oxide quantum dot layer to the current collector. After cooling to room temperature, the cathode-polarized silicon oxide quantum dot anode material (charge density ≥10⁻) is obtained. 6 C / cm²);

[0074] (5) Material pairing: The anodic polarized carbon quantum dot positive electrode material obtained in step (2) and the cathode polarized silicon oxide quantum dot negative electrode material obtained in step (4) are paired in a mass ratio of 1:2 to obtain bidirectional polarized quantum dot energy storage material.

[0075] The energy storage material prepared in this embodiment can achieve low-voltage start-up of 0.1V, withstand infinitely high voltages, and its energy density increases quadratically with increasing operating voltage, with a charge density ≥10⁻⁻⁶. 6 With a pressure resistance of C / cm², it is suitable for extreme high-pressure energy storage scenarios such as aerospace and military equipment.

[0076] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage, characterized in that, include: Anodic polarization carbon quantum dot cathode material; Cathode-polarized silicon dioxide quantum dot anode material; The anodic polarized carbon quantum dot cathode material is obtained by anodic polarization of carbon quantum dots, and its surface has directional positive charge traps. The cathode-polarized silicon oxide quantum dot anode material is obtained by cathode polarization of silicon oxide quantum dots, and its surface has directional negative charge traps. The anodic polarized carbon quantum dot positive electrode material and the cathode polarized silicon oxide quantum dot negative electrode material are paired to form a built-in electric field.

2. The bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage as described in claim 1, characterized in that, The carbon quantum dots in the anodic polarized carbon quantum dot cathode material have a particle size of 2–10 nm and a specific surface area ≥800 m² / g; the silicon dioxide quantum dots in the cathode polarized silicon oxide quantum dot anode material have a particle size of 3–15 nm and a dielectric constant ≥30.

3. The bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage as described in claim 1, characterized in that, The mass ratio of carbon quantum dots to silicon oxide quantum dots is 1:0.3 to 2.

4. The bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage as described in claim 1, characterized in that, The charge density of the anode polarized carbon quantum dot positive electrode material is ≥10 6 C / cm², and the charge density of the cathode polarized silicon oxide quantum dot negative electrode material is ≥10 6 C / cm².

5. A method for preparing a bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage, comprising the following steps: (1) Preparation of carbon quantum dot dispersion: Disperse carbon quantum dots in a solvent, add a binder, stir evenly to obtain carbon quantum dot dispersion; (2) Preparation of carbon quantum dot electrode: The carbon quantum dot dispersion from step (1) is coated onto the current collector and dried to obtain the carbon quantum dot electrode; (3) Anodic polarization treatment: The carbon quantum dot electrode obtained in step (2) is placed in a vacuum or inert gas atmosphere and subjected to anodic polarization treatment. The polarization temperature is 50-200℃, the polarization electric field strength is 1-30 kV / cm, and the polarization time is 10-120 min to obtain annodic polarized carbon quantum dot cathode material. (4) Preparation of silica quantum dot slurry: Disperse silica quantum dots in a solvent, add binder, stir evenly to obtain silica quantum dot slurry; (5) Preparation of silicon oxide quantum dot electrode: The silicon oxide quantum dot slurry obtained in step (4) is coated on the current collector and dried to obtain silicon oxide quantum dot electrode; (6) Cathode polarization treatment: The silicon dioxide quantum dot electrode obtained in step (5) is placed in a vacuum or inert gas atmosphere and subjected to cathode polarization treatment. The polarization temperature is 40-180℃, the polarization electric field strength is 1-25 kV / cm, and the polarization time is 10-120 min to obtain cathode polarized silicon dioxide quantum dot anode material. (7) Material pairing: Pair the positive electrode material obtained in step (3) with the negative electrode material obtained in step (6) to obtain bidirectional polarized quantum dot energy storage material.

6. The method for preparing a bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage as described in claim 5, characterized in that, The solvents used in steps (1) and (4) are selected from one or more of deionized water, ethanol, and N-methylpyrrolidone.

7. The method for preparing a bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage as described in claim 5, characterized in that, The adhesive used in steps (1) and (4) is selected from polyvinylidene fluoride, polytetrafluoroethylene, and carboxymethyl cellulose.

8. The method for preparing a bidirectional polarized quantum dot energy storage material for infinite high-voltage energy storage as described in claim 5, characterized in that, In steps (3) and (6), the electric field direction remains stable during polarization. The direction of the anodic polarization electric field is from the current collector to the carbon quantum dot layer, and the direction of the cathodic polarization electric field is from the silicon oxide quantum dot layer to the current collector.

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