Aluminum substrate copper layer bond strength enhancement method and system
By performing hierarchical physical morphology reconstruction and intermetallic compound transition layer deposition on the surface of the aluminum substrate, combined with thermal coupling, the problem of insufficient bonding strength between the aluminum substrate and the copper layer was solved, thereby improving the interfacial bonding strength and releasing stress, and ensuring the stability and consistency of the copper clad layer on the aluminum substrate.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU RONGJIN ELECTRONICS CO LTD
- Filing Date
- 2026-06-23
- Publication Date
- 2026-07-21
AI Technical Summary
In existing technologies, the bonding strength between the aluminum substrate and the copper layer is insufficient, which cannot effectively cope with the stress caused by the difference in thermal expansion coefficients, resulting in the propagation of microcracks at the interface. Furthermore, the fixed traditional process parameters cannot be dynamically adjusted, leading to fluctuations in bonding performance.
A hierarchical microstructure layer is formed by physically reconstructing the surface of an aluminum substrate, and an intermetallic compound transition layer is deposited on it. Combined with thermal coupling, atomic diffusion behavior is controlled to form a metallurgical bonding interface. The bonding strength and stress release are optimized by adaptively adjusting process parameters.
It significantly improves the interfacial bonding strength between the aluminum substrate and the copper clad layer, effectively alleviates the stress caused by the difference in thermal expansion coefficients, ensures stable adhesion under extreme working conditions, and improves the high-temperature service reliability and bonding strength consistency of the product.
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