A physical vapor deposition chamber and physical vapor deposition apparatus

Abstract

The application relates to the technical field of semiconductors, and provides a physical vapor deposition (PVD) chamber and a PVD device. The PVD chamber comprises a cavity, a base, a deposition ring, a shielding ring and a cover ring. The base is telescopically arranged in the cavity, and the base forms a bearing surface and a mounting surface. The bearing surface is used for bearing a wafer. The deposition ring is arranged on the mounting surface, and an outer peripheral wall of the deposition ring forms a first connecting part. The shielding ring is annularly arranged on the outer periphery of the deposition ring, and an outer wall of the shielding ring is connected to an inner wall of the cavity. The inner wall forms a step. The cover ring movably overlaps the step, and an inner peripheral wall of the cover ring forms a second connecting part. When the base drives the deposition ring to ascend, the first connecting part can be connected to the second connecting part, the deposition ring lifts the cover ring, and the cover ring is separated from the shielding ring. When the base drives the deposition ring to descend, the first connecting part can be separated from the second connecting part. The PVD chamber and the PVD device provided by the application can reduce the contact probability of the cover ring and the shielding ring when the deposition ring lifts the cover ring.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a physical vapor deposition chamber and a physical vapor deposition apparatus. Background Technology

[0002] In physical vapor deposition (PVD), a cover ring is fastened to the top of a shield ring to define a closed reaction chamber, while a deposit ring is positioned above the substrate. This allows the deposit ring to be lifted by the substrate, separating it from the shield ring and facilitating the process. However, when the deposit ring lifts the cover ring, the cover ring is prone to shaking, which can cause occasional contact between the cover ring and the shield ring, resulting in them having the same potential. This can lead to voltage fluctuations, which in turn affect the deposition quality of the thin film. Summary of the Invention

[0003] This application provides a physical vapor deposition chamber and a physical vapor deposition apparatus, which can reduce the probability of contact between the cover ring and the shielding ring when the deposition ring lifts the cover ring.

[0004] The technical solution of this application embodiment is implemented as follows: One embodiment of this application provides a physical vapor deposition chamber, including: cavity; A base is extended and retracted within the cavity along the top-bottom direction. The base has a bearing surface and a mounting surface that is circumferentially disposed around the outer periphery of the bearing surface. The mounting surface is lower than the bearing surface along the top-bottom direction. The bearing surface is used to support the wafer. A deposition ring is disposed on the mounting surface, and a first connecting portion is formed on the outer peripheral wall of the deposition ring; A shielding ring is disposed around the outer periphery of the deposition ring, the outer wall of the shielding ring is connected to the inner wall of the chamber, and the inner wall of the shielding ring forms a step; A cover ring is movably attached to the step, and a second connecting portion is formed on the inner peripheral wall of the cover ring; During the process of the base driving the deposition ring to rise, the first connecting part can connect with the second connecting part, and the deposition ring lifts the covering ring and separates it from the shielding ring; during the process of the base driving the deposition ring to fall, the first connecting part can separate from the second connecting part, and the covering ring overlaps on the step.

[0005] In one embodiment, one of the first connecting portion and the second connecting portion is a spiral groove, and the other of the first connecting portion and the second connecting portion is a spiral protrusion, wherein the spiral protrusion is spirally engaged with the spiral groove.

[0006] In one embodiment, the spiral groove is spherical, the spiral protrusion is hemispherical, and the spiral groove and the spiral protrusion are in spherical contact; and / or, The spiral groove has a guide slope at its opening edge, and the spiral protrusion is guided to the spiral groove via the guide slope.

[0007] In one embodiment, a lubricating layer is provided in the spiral groove and / or on the surface of the spiral protrusion.

[0008] In one embodiment, one of the first connecting portion and the second connecting portion is a limiting groove, and the other of the first connecting portion and the second connecting portion is a limiting block, wherein the limiting block is engaged with the limiting groove for limiting.

[0009] In one embodiment, the covering ring has a first surface that contacts the shielding ring, the shielding ring has a second surface that contacts the covering ring, and the first surface and / or the second surface are provided with an elastic cushioning pad.

[0010] In one embodiment, there are multiple elastic buffer pads, which are spaced apart circumferentially along the cover ring, and the total length of the multiple elastic buffer pads accounts for 50% to 70% of the entire circumference.

[0011] In one embodiment, the surface of the elastic cushioning pad is provided with a corrosion-resistant layer.

[0012] In one embodiment, the thickness of the elastic cushioning pad is between 0.3 mm and 0.5 mm.

[0013] Another aspect of this application provides a physical vapor deposition apparatus, including the physical vapor deposition chamber of any of the above embodiments.

[0014] This application provides a physical vapor deposition (PVD) chamber and a PVD apparatus. On one hand, it can increase the contact area between the deposition ring and the capping ring, improving their self-alignment effect. This, in turn, can enhance the support stability of the deposition ring on the capping ring, reducing the probability of the capping ring wobbling and contacting the shielding ring when it is lifted. This reduces voltage fluctuations and improves the stability of the thin film deposition process and product yield. On the other hand, since it only involves structural optimization of consumable components, namely the capping ring and the deposition ring, it eliminates the need for large-scale structural modifications to the PVD chamber. This reduces the design and manufacturing difficulty of the PVD chamber, making it suitable for different types and models of PVD chambers. Attached Figure Description

[0015] Figure 1This is a schematic diagram of the structure of a deposition ring, a shielding ring, and a cover ring provided in an embodiment of this application, wherein the cover ring overlaps on a step, and the deposition ring is located outside the shielding ring; Figure 2 This is a schematic diagram of the structure of a deposition ring, a shielding ring, and a cover ring provided in another embodiment of the present application, wherein the cover ring overlaps on a step, and the base drives the deposition ring to rise into the shielding ring; Figure 3 This is a schematic diagram of the structure of a deposition ring, a shielding ring, and a cover ring provided in another embodiment of the present application, wherein the deposition ring pushes up the cover ring to separate it from the shielding ring; Figure 4 This is a schematic diagram of the structure of the deposition ring, shielding ring, and covering ring provided in another embodiment of this application.

[0016] Explanation of reference numerals in the attached figures 1. Deposition ring; 1a. Spiral protrusion; 2. Barrier ring; 2a. Step; 3. Covering ring; 3a. Spiral groove. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. The described embodiments should not be regarded as limitations on this application. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0018] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification and the foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0019] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0020] The present application will now be described in further detail with reference to the accompanying drawings and specific embodiments. The terms "first," "second," etc., used in the embodiments of this application are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly including at least one feature.

[0021] In related technologies, during the lifting and lowering of the substrate, when the deposition ring lifts the cover ring, the cover ring may occasionally come into contact with the shielding ring, causing potential connection, which in turn causes fluctuations in the source DC voltage, thereby affecting the deposition uniformity, yield and stability of physical vapor deposition.

[0022] In view of this, one embodiment of this application provides a physical vapor deposition chamber, please refer to... Figures 1 to 4 The physical vapor deposition chamber includes a chamber, a base, a deposition ring 1, a shielding ring 2, and a cover ring 3. The base is telescopically disposed within the chamber along its top-to-bottom direction. The base has a bearing surface and a mounting surface that surrounds the bearing surface. The mounting surface is lower than the bearing surface along its top-to-bottom direction and is used to support the wafer. The deposition ring 1 is disposed on the mounting surface, and a first connecting portion is formed on its outer peripheral wall. The shielding ring 2 surrounds the outer periphery of the deposition ring 1, and its outer wall is connected to the inner wall of the chamber. A step 2a is formed on the inner wall of the shielding ring 2. The cover ring 3 movably overlaps the step 2a, and a second connecting portion is formed on its inner peripheral wall.

[0023] During the process of the base driving the deposition ring 1 to rise, the first connecting part can connect with the second connecting part, and the deposition ring 1 lifts the covering ring 3 and separates from the shielding ring 2; during the process of the base driving the deposition ring 1 to fall, the first connecting part can separate from the second connecting part, and the covering ring 3 overlaps on the step 2a.

[0024] For example, the physical vapor deposition chamber provided in this application can be the physical vapor deposition chamber of a physical vapor deposition apparatus, which can be used to deposit titanium nitride (TiN) thin films on wafers.

[0025] The base is a device used to support the wafer and the deposition ring 1, as well as to heat the wafer.

[0026] The location of step 2a can be the process position of the thin film deposition process.

[0027] For example, the base may include a telescopic support and a suction cup. The bottom of the telescopic support is disposed in the bottom wall of the cavity, and the top is provided with a suction cup. The top edge of the telescopic support extends radially along the suction cup to form an annular support portion, the annular support portion forming a mounting surface, and the top surface of the suction cup forming a bearing surface.

[0028] The suction cup has the functions of adsorbing and heating the wafer.

[0029] Deposition ring 1 refers to a ring-shaped structure used to accommodate the deposited thin film, in order to reduce the deposition of the thin film on the substrate and the edges and back of the wafer.

[0030] For example, deposition ring 1 is formed with a top-open deposition tank for depositing thin films.

[0031] The shielding ring 2 refers to the protective component on the inner wall of the cavity, which can reduce the deposition of thin film on the inner wall of the cavity.

[0032] For example, the shielding ring 2 may include an annular portion, a connecting portion, and an overlapping portion. The connecting portion may be connected to the top of the annular portion and extend radially outward to connect with the inner wall of the cavity. The overlapping portion may be disposed at the bottom of the annular portion and extend radially inward to form a step 2a for overlapping with the covering ring 3. That is, when the covering ring 3 overlaps with the shielding ring 2, at least a portion of the covering ring 3 is located inside the shielding ring 2.

[0033] The capping ring 3 refers to the ring structure used in conjunction with the deposition ring 1 to reduce sputtered particles deposited on the edge and back of the wafer.

[0034] It should be noted that the outer diameter of the deposition ring 1 is approximately the same as the inner diameter of the cover ring 3. The outer diameter of the deposition ring 1 is smaller than the inner diameter of the shielding ring 2 where the step 2a is located, and the outer diameter of the cover ring 3 is larger than the inner diameter of the shielding ring 2 where the step 2a is located. This allows the deposition ring 1 to lift the cover ring 3 upwards, separating the cover ring 3 from the shielding ring 2, and to fall downwards, allowing the cover ring 3 to overlap the step 2a.

[0035] For example, the shielding ring 2, the covering ring 3, the deposition ring 1 and the base together form a reaction chamber with a top opening. A target material can be placed on the top of the reaction chamber. By applying a voltage to the target material and the base, the process gas enters the reaction chamber and forms plasma under the action of the electric field. Then the plasma bombards the target material to generate sputtered ions, which are finally deposited on the wafer, the shielding ring 2, the covering ring 3 and the deposition ring 1.

[0036] It should be noted that the shielding ring 2 is connected to the inner wall of the cavity and grounded. When the deposition process is underway, if the cover ring 3 is in contact with the shielding ring 2, the potential of the cover ring 3 and the shielding ring 2 will be the same, which is equivalent to the cover ring 3 being grounded as well. The cover ring 3 is in contact with the deposition ring 1 set on the base. This will cause the voltage between the base and the target to fluctuate. The fluctuation range can reach ±5V, which will affect the uniformity of the film deposition.

[0037] For example, the connection methods of the first connecting part and the second connecting part include, but are not limited to: threaded engagement, plugging, snap-fit ​​or magnetic attraction.

[0038] It should be noted that during the process of the base driving the deposition ring 1 to descend, the process of the first connecting part separating from the second connecting part can include at least three stages: In the first stage, the covering ring 3 descends with the base until it contacts and overlaps with the step 2a inside the shielding ring 2; In the second stage, due to the obstruction of the step 2a, the covering ring 3 can no longer descend. At this time, the downward pulling force of the base and the gravity of the deposition ring 1 itself can cause the connection between the first connecting part and the second connecting part to break; In the third stage, the deposition ring 1 continues to descend with the base and separates from the covering ring 3.

[0039] In other words, in the physical vapor deposition chamber provided in this application, when the base rises, the covering ring 3 can be connected to the deposition ring 1 to stably lift the covering ring 3 and separate it from the shielding ring 2.

[0040] For example, the deposition ring 1 may have a first connecting portion formed on the outer peripheral wall near the top, and the cover ring 3 may have a second connecting portion formed on the inner peripheral wall near the bottom. This not only speeds up the connection between the first connecting portion and the second connecting portion, but also facilitates their separation.

[0041] The physical vapor deposition chamber provided in this application forms a first connecting portion on the outer peripheral wall of the deposition ring 1 and a second connecting portion on the inner peripheral wall of the cover ring 3. When the base drives the deposition ring 1 to rise, the first connecting portion can connect with the second connecting portion, causing the deposition ring 1 to lift the cover ring 3 and separate it from the shielding ring 2. This increases the contact area between the deposition ring 1 and the cover ring 3, improving their self-alignment effect and thus enhancing the support stability of the deposition ring 1 on the cover ring 3. It also reduces the probability of the cover ring 3 wobbling and contacting the shielding ring 2 when lifted, thereby reducing voltage fluctuations and improving the stability of the thin film deposition process and product yield. Furthermore, since it only involves structural optimization of consumable components, namely the cover ring 3 and the deposition ring 1, it eliminates the need for large-scale structural modifications to the physical vapor deposition chamber. This reduces the design and manufacturing difficulty of the physical vapor deposition chamber, making it suitable for different types and models of physical vapor deposition chambers. When the base drives the deposition ring 1 to descend, the first connecting part can separate from the second connecting part, so that the covering ring 3 can overlap on the step 2a.

[0042] In one embodiment, please refer to Figures 1 to 3 One of the first connecting part and the second connecting part is a spiral groove 3a, and the other of the first connecting part and the second connecting part is a spiral protrusion 1a, which is spirally engaged with the spiral groove 3a.

[0043] For example, the first connecting part can be a spiral protrusion 1a, and the second connecting part can be a spiral groove 3a; of course, the first connecting part can also be a spiral groove 3a, and the second connecting part can be a spiral protrusion 1a.

[0044] For example, the groove depth of the spiral groove 3a can be 0.2 mm, and the pitch of the spiral groove 3a can be 5 mm.

[0045] Here, when the base drives the deposition ring 1 to rise, the cover ring 3 is lifted and separated from the step 2a by the spiral protrusion 1a and the spiral groove 3a. At this time, the cover ring 3 can be connected to the deposition ring 1 by the spiral guide of the spiral protrusion 1a and the spiral groove 3a under its own weight, which can limit the radial swaying of the cover ring 3 when it is lifted, thus reducing the probability of contact between the cover ring 3 and the shielding ring 2. When the base drives the deposition ring 1 to fall, the cover ring 3 can abut against the step 2a. At this time, the deposition ring 1 can be separated from the cover ring 3 by the guide of the spiral groove 3a and the spiral protrusion 1a under its own weight.

[0046] In one embodiment, the spiral groove 3a is spherical, the spiral protrusion 1a is hemispherical, and the spiral groove 3a and the spiral protrusion 1a are in spherical contact.

[0047] For example, the radius of curvature of the spiral groove 3a can be 1.55 mm, and the radius of curvature of the spiral protrusion 1a can be 1.5 mm.

[0048] Here, by designing the spiral groove 3a as spherical and the spiral protrusion 1a as hemispherical, a ball-hinged fit is formed, making the two spherically contacting each other. This reduces the contact stress between the spiral protrusion 1a and the groove wall of the spiral groove 3a, thereby reducing wear between them and improving their service life. On the other hand, the ball-hinged fit allows the cover ring 3 to adaptively adjust its posture during lifting and lowering, reducing the sway amplitude and further reducing the probability of contact with the shielding ring 2.

[0049] In some embodiments, simulation software shows that the contact stress of spherical contact can be reduced from 350 MPa to 120 MPa compared to planar contact, resulting in a 70% reduction in wear rate.

[0050] In some embodiments, the groove edge of the spiral groove 3a is provided with a guide slope, and the spiral protrusion 1a is guided to the spiral groove 3a via the guide slope.

[0051] For example, the first connecting part is a spiral groove 3a, the second connecting part is a spiral protrusion 1a, the groove opening of the spiral groove 3a is located at its bottom, and the edge of the groove opening is provided with a guide slope.

[0052] In this way, the spiral protrusion 1a can be guided into the spiral groove 3a, thereby reducing the alignment accuracy requirements between the spiral protrusion 1a and the spiral groove 3a.

[0053] In one embodiment, a lubricating layer is provided inside the spiral groove 3a and / or on the surface of the spiral protrusion 1a.

[0054] For example, the form of the lubricating layer is not limited; for instance, the surfaces to be in contact may be polished, or a lubricant, lubricating oil, or lubricating grease may be applied to the surfaces to be in contact.

[0055] The method of setting the lubrication layer is not limited. For example, the lubrication layer can be set only in the spiral groove 3a, or only on the surface of the spiral protrusion 1a, or both in the spiral groove 3a and on the surface of the spiral protrusion 1a.

[0056] Specifically, the surface of the spiral protrusion 1a can be polished to a roughness of no more than 0.1 μm, and a diamond coating can be sprayed into the spiral groove 3a.

[0057] Here, by providing a lubricating layer inside the spiral groove 3a and / or on the surface of the spiral protrusion 1a, not only can frictional resistance be reduced and jamming reduced, but wear can also be significantly reduced and service life increased.

[0058] In one embodiment, one of the first connecting part and the second connecting part is a limiting groove, and the other of the first connecting part and the second connecting part is a limiting block, and the limiting block and the limiting groove are mutually limiting.

[0059] For example, the first connecting part can be a limiting block and the second connecting part can be a limiting groove; of course, it is also possible that the first connecting part is a limiting groove and the second connecting part is a limiting block.

[0060] The specific limiting form of the limiting groove and the limiting block is not limited. Taking the first connecting part as the limiting block and the second connecting part as the limiting groove as an example: A limiting groove is formed on the inner wall of the cover ring 3, and the opening of the limiting groove can be set downward. An upwardly extending limiting block is formed on the outer wall of the deposition ring 1. When the base drives the deposition ring 1 to rise, the limiting block can be inserted into the limiting groove from bottom to top, thereby lifting the cover ring 3 and separating it from the shielding ring 2. Due to the limiting groove and the limiting block, the shaking of the cover ring 3 when it is lifted can be reduced, thereby reducing the probability of contact with the shielding ring 2. When the base drives the deposition ring 1 to fall, the cover ring 3 will first overlap the step 2a as the base falls. Then, under the action of the gravity of the deposition ring 1 and / or the downward pulling force of the base, the limiting block can be dislodged from the bottom of the limiting groove to complete the separation of the deposition ring 1 and the cover ring 3.

[0061] The limiting groove forms the inner wall of the covering ring 3. The limiting groove can be formed by multiple limiting ribs spaced apart along the top and bottom directions, so that the opening of the limiting groove is radially inward, and the radial dimension of the limiting ribs increases from bottom to top. The limiting block can be set on the outer wall of the deposition ring 1 and protrudes radially outward. When the base drives the deposition ring 1 to rise, the limiting block can squeeze the limiting ribs at the bottom into the limiting groove under the upward thrust of the base and the gravity of the covering ring 3, thereby lifting the covering ring 3 and separating it from the shielding ring 2. When the base drives the deposition ring 1 to fall, the covering ring 3 will first overlap the step 2a as the base falls. Then, under the gravity of the deposition ring 1 and / or the downward pull of the base, the limiting block can squeeze the limiting ribs out of the limiting groove from the bottom, thereby completing the separation of the deposition ring 1 and the covering ring 3.

[0062] In this way, by setting the limiting groove and the limiting block, not only can the support stability of the covering ring 3 be improved, but the deposition ring 1 and the covering ring 3 can also be easily separated when the base is lowered.

[0063] In some embodiments, there are multiple limiting grooves and multiple limiting blocks. The multiple limiting grooves are arranged at intervals along the circumference of the covering ring 3, and the arrangement of the multiple limiting blocks corresponds to the arrangement of the multiple limiting grooves. In this way, the shaking of the covering ring 3 when it is lifted can be further reduced.

[0064] In one embodiment, the covering ring 3 has a first surface that contacts the shielding ring 2, the shielding ring 2 has a second surface that contacts the covering ring 3, and the first surface and / or the second surface are provided with elastic cushioning pads.

[0065] For example, the first surface of the covering ring 3 that contacts the shielding ring 2 may include the bottom end surface of the covering ring 3 and a portion of the outer peripheral surface of the covering ring 3 near the bottom end; the second surface of the shielding ring 2 that contacts the covering ring 3 may include the top surface of the step 2a and a portion of the inner peripheral surface of the shielding ring 2 near the step 2a.

[0066] The way the elastic cushioning pad is set is not limited. For example, the elastic cushioning pad can be set only on the first surface, or only on the second surface, or both the first and second surfaces can be set with elastic cushioning pads.

[0067] The material for the elastic cushioning pad can be a high-temperature stable metal-based composite material, that is, a combination of a hard layer and a porous alloy layer, such as a combination of Mo-SiC composite material and porous titanium-nickel shape memory alloy.

[0068] For example, the arrangement of the elastic cushioning pad is not limited. For instance, the material of the cover ring 3 can be stainless steel. The Mo-SiC layer is welded to the cover ring 3 by welding, and then a porous titanium-nickel shape memory alloy is deposited on the Mo-SiC layer by laser cladding technology.

[0069] Here, by providing elastic buffer pads on the first and / or second surfaces, the covering ring 3 and the shielding ring 2 can be buffered when the base descends, so as to absorb the impact force when the two come into contact, reduce the occurrence of micro-deformation, and extend the service life of the covering ring 3 and the shielding ring 2.

[0070] In one embodiment, there are multiple elastic buffer pads, which are spaced apart circumferentially along the covering ring 3, and the total length of the multiple elastic buffer pads accounts for 50% to 70% of the entire circumference.

[0071] For example, the number of elastic cushioning pads can be two, three, or more.

[0072] The total length of multiple elastic cushioning pads can account for 50%, 55%, 60%, 65%, or 70% of the entire circumference, etc.

[0073] It should be noted that the "circle" here refers to a closed loop formed by connecting multiple elastic buffer pads spaced apart circumferentially.

[0074] In this way, while providing cushioning and absorbing impact, it can also reduce production and manufacturing costs to some extent.

[0075] In one embodiment, the surface of the elastic cushioning pad is provided with a corrosion-resistant layer.

[0076] For example, the corrosion-resistant layer can be a nano-yttrium oxide (Y2O3) coating with a thickness of 50 μm.

[0077] Here, by setting a corrosion-resistant layer on the surface of the elastic buffer pad, not only can plasma erosion be effectively reduced and the service life of the cover ring 3 be improved, but also material peeling and contamination of the wafer can be reduced, thus improving the wafer yield.

[0078] In some embodiments, a Mo-SiC layer, a porous titanium-nickel shape memory alloy, and a nano-yttrium oxide coating can be deposited using laser cladding technology, which can improve the bonding strength with the cover ring 3.

[0079] In some embodiments, the thickness of the elastic cushioning pad can be between 0.3 mm and 0.5 mm.

[0080] For example, the thickness of the elastic cushioning pad can be 0.3mm, 0.35mm, 0.4mm, 0.45mm or 0.5mm, etc.

[0081] It should be noted that the thickness mentioned here refers to the sum of the thicknesses of the hard layer, the porous alloy layer, and the corrosion-resistant layer.

[0082] Here, by setting an elastic buffer pad of appropriate thickness, not only can impact, tolerance and thermal stress be effectively absorbed, but also the situation of insufficient rebound causing crushing can be reduced.

[0083] Another aspect of this application provides a physical vapor deposition apparatus, including the physical vapor deposition chamber of any of the above embodiments.

[0084] The physical vapor deposition equipment provided in this application, based on the advantages of the aforementioned physical vapor deposition chamber, features high production reliability and good thin film deposition stability.

[0085] In this embodiment, for depositing a titanium nitride thin film on a wafer, the wafer can be adsorbed by a suction cup, and the deposition ring 1 can be raised to the process position by a telescopic support, so that the first connection part and the second connection part are connected. The deposition ring 1 can lift the cover ring 3 and separate it from the shielding ring 2. This can reduce source voltage fluctuations. Finally, the thin film deposition can be performed on the wafer by applying voltage to the target and the substrate. After the thin film deposition is completed, the deposition ring 1 can be lowered by the telescopic support. At this time, the first connection part can be separated from the second connection part, so that the cover ring 3 can overlap the step 2a.

[0086] The above embodiments are merely illustrative of the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and all should be covered within the scope of the specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way.

Claims

1. A physical vapor deposition chamber, characterized in that, include: cavity; A base is extended and retracted within the cavity along the top-bottom direction. The base has a bearing surface and a mounting surface that is circumferentially disposed around the outer periphery of the bearing surface. The mounting surface is lower than the bearing surface along the top-bottom direction. The bearing surface is used to support the wafer. A deposition ring is disposed on the mounting surface, and a first connecting portion is formed on the outer peripheral wall of the deposition ring; A shielding ring is disposed around the outer periphery of the deposition ring, the outer wall of the shielding ring is connected to the inner wall of the chamber, and the inner wall of the shielding ring forms a step; A cover ring is movably attached to the step, and a second connecting portion is formed on the inner peripheral wall of the cover ring; Wherein, one of the first connecting part and the second connecting part is a spiral groove, and the other of the first connecting part and the second connecting part is a spiral protrusion, wherein the spiral protrusion is spirally engaged with the spiral groove; During the process of the base driving the deposition ring to rise, the deposition ring lifts the cover ring and separates it from the step through the spiral protrusion and the spiral groove. Under its own weight, the cover ring connects to the deposition ring through the spiral guide of the spiral protrusion and the spiral groove, and the cover ring separates from the shielding ring. As the base drives the deposition ring to descend, the cover ring abuts against the step, and the deposition ring, under its own gravity, disengages from the cover ring through the guidance of the spiral groove and the spiral protrusion.

2. The physical vapor deposition chamber according to claim 1, characterized in that, The spiral groove is spherical, the spiral protrusion is hemispherical, and the spiral groove and the spiral protrusion are in spherical contact; and / or The spiral groove has a guide slope at its opening edge, and the spiral protrusion is guided to the spiral groove via the guide slope.

3. The physical vapor deposition chamber according to claim 1, characterized in that, A lubricating layer is provided in the spiral groove and / or on the surface of the spiral protrusion.

4. The physical vapor deposition chamber according to claim 1, characterized in that, The covering ring has a first surface that contacts the shielding ring, and the shielding ring has a second surface that contacts the covering ring. The first surface and / or the second surface are provided with elastic cushioning pads.

5. The physical vapor deposition chamber according to claim 4, characterized in that, The number of elastic buffer pads is multiple, and the multiple elastic buffer pads are arranged at intervals along the circumference of the covering ring. The total length of the multiple elastic buffer pads accounts for 50% to 70% of the entire circumference.

6. The physical vapor deposition chamber according to claim 4, characterized in that, The surface of the elastic buffer pad is provided with a corrosion-resistant layer.

7. The physical vapor deposition chamber according to claim 6, characterized in that, The thickness of the elastic cushioning pad is between 0.3 mm and 0.5 mm.

8. A physical vapor deposition apparatus, characterized in that, Includes the physical vapor deposition chamber as described in any one of claims 1 to 7.

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