A continuous deposition system for fabricating a multilayer thin film structure of an array of light emitting devices

Abstract

The application provides a continuous deposition system for manufacturing a multilayer thin film structure of a light-emitting device array, and relates to the field of manufacturing equipment of semiconductor devices.The continuous deposition system for manufacturing a multilayer thin film structure of a light-emitting device array comprises a conveying mechanism, a control system and a plurality of functional cavities which are sequentially and serially arranged along a conveying direction of a substrate.The continuous deposition system for manufacturing a multilayer thin film structure of a light-emitting device array provided by the application can push the substrate together with the thin film into the next cavity without destroying the vacuum after depositing each layer of film, until the impurities in the thin film are activated by the activation cavity.The single-function cavity process is adopted, the influence of different thin films and different doping on the quality of the next layer of film is reduced, the influence of the pollution of the external environment on the quality of the thin film is also reduced, and the yield of the product is greatly improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device manufacturing equipment, and more particularly to a continuous deposition system for fabricating multilayer thin film structures of light-emitting device arrays. Background Technology

[0002] In modern optoelectronic technology, light-emitting devices are of paramount importance. Among them, semiconductor light-emitting devices (LEDs) are widely used due to their high efficiency and energy saving. The production of semiconductor thin films mainly relies on expensive MOCVD and MBE equipment. The former uses metal-organic compounds to grow thin films in the vapor phase on a substrate, which is the key to manufacturing various LEDs. The latter achieves atomic-level material deposition under ultra-high vacuum, which has the characteristics of high precision and high purity. Due to the high cost of the equipment, manufacturers often use one machine to deposit multiple layers of film. When fabricating a one-dimensional or two-dimensional light-emitting device array, its cross-sectional structure requires the deposition of a series of semiconductor layers on a substrate. Existing techniques for depositing multilayer semiconductors involve placing the substrate in a cavity, introducing the elements required for the first semiconductor layer into the cavity in the form of atoms or molecules, and then raising the temperature of the substrate to deposit the first semiconductor layer. After the first semiconductor layer is deposited, the elements required for the second semiconductor layer are introduced into the cavity in the form of atoms or molecules, and the temperature is raised again to deposit the second semiconductor layer. This process is repeated to complete the entire sequence of semiconductor layers. After a series of semiconductor layers are deposited, the temperature of the substrate is lowered, the cavity is opened, and the substrate is removed. Multiple heating of the substrate and deposition of multilayer films are performed using a single cavity of the device. However, this method suffers from atomic cross-contamination between adjacent film materials, which affects device performance. Secondly, the time required to deposit a series of semiconductor layers in the same cavity is relatively long. The yield per unit time using the same cavity is low and the deposited film area is small. In order to ensure the uniformity of film thickness, existing MOCVD or MBE equipment can only accept single crystal substrates with small diameters, which are generally 6 inches or smaller. They are also limited by structure and need to be placed on different planes. The substrates deposited in one go generally have to be placed on different planes to reduce the thickness non-uniformity, which causes inconvenience to practical use.

[0003] Therefore, it is necessary to provide a new continuous deposition system for fabricating multilayer thin film structures of light-emitting device arrays to solve the above-mentioned technical problems. Summary of the Invention

[0004] To solve the above technical problems: 1. Existing deposition equipment for thin film structures used to fabricate light-emitting devices, such as MOCVD or MBE, has a low throughput per unit time, meaning that the film thickness and area that can be deposited per unit time are small. 2. Existing MOCVD or MBE equipment requires high substrate temperatures when depositing thin films, and can generally only accept high-melting-point single-crystal substrates. It cannot accept large-area non-single-crystal substrates such as glass, ceramics or metals. The diameter and area of ​​single-crystal substrates are small, which means that mass production cannot be carried out on large-area substrates. 3. When depositing doped materials on MOCVD or MBE equipment, after introducing impurities and depositing a multilayer structure, impurity activation is required. The process involves several steps: cooling the substrate in the deposition chamber → removing it → placing it back into the activation system chamber → heating it to a predetermined temperature for impurity activation → rapid cooling. Therefore, this activation process requires multiple heating and cooling cycles, which is time-consuming and energy-intensive. In addition, this process exposes the substrate to the atmosphere, and the substrate surface will be contaminated by the ambient atmosphere. During high-temperature activation, atoms from the contaminants adsorbed on the surface can penetrate into the deposited film and affect the device quality. 4. In existing MOCVD or MBE deposition equipment, the substrate temperature is high during thin film deposition. After depositing thin film layers with different compositions, the interdiffusion of atoms between adjacent layers will affect the performance of the device.

[0005] This invention provides a continuous deposition system for fabricating a multilayer thin film structure of a light-emitting device array. The system includes: a transport mechanism, a control system, and multiple functional cavities arranged in series along the substrate transport direction. The multiple functional cavities include: Pre-vacuum chamber: It is equipped with a first air inlet, a first vacuum pump group and a first heating device, which are used to pre-evacuate and preheat the incoming substrate; Preheating and plasma cleaning chamber: It is equipped with a second air inlet, a second vacuum pump group, a second heating device and at least two plasma sources for plasma bombardment cleaning of the substrate; Multilayer thin film deposition chamber assembly: includes a lower contact layer deposition chamber, a lower injection layer deposition chamber, a light-emitting layer deposition chamber, an upper injection layer deposition chamber, and an upper contact layer deposition chamber. Each of the lower contact layer deposition chamber, lower injection layer deposition chamber, light-emitting layer deposition chamber, upper injection layer deposition chamber, and upper contact layer deposition chamber is equipped with a third air inlet, a third vacuum pump assembly, a third heating device, multiple sputtering targets, and corresponding pulse power supplies. Impurity activation chamber: It is equipped with a fourth air inlet, a fourth vacuum pump group, a first heater and a second heater, which are used to rapidly thermally anneal and activate the deposited film. Cooling chamber: It is equipped with a fifth air inlet, a fifth vacuum pump group and a cooling device to cool the substrate to room temperature; The transfer mechanism is located between the pre-vacuum chamber, the preheating and plasma cleaning chamber, the lower contact layer deposition chamber, the lower implantation layer deposition chamber, the light-emitting layer deposition chamber, the upper implantation layer deposition chamber and the upper contact layer deposition chamber, the impurity activation chamber and the cooling chamber, and is used to transfer the substrate sequentially from the pre-vacuum chamber to the cooling chamber in a vacuum environment. Control system: The vacuum pump group, heating device, plasma source, sputtering target power supply and transmission mechanism are electrically connected to the pre-vacuum chamber, preheating and plasma cleaning chamber, lower contact layer deposition chamber, lower injection layer deposition chamber, luminescent layer deposition chamber, upper injection layer deposition chamber and upper contact layer deposition chamber, impurity activation chamber and cooling chamber respectively, and are used to control gas pressure, temperature and process time; The internal structures of the lower contact layer cavity, lower injection layer cavity, luminescent layer cavity, upper injection layer cavity, and upper contact layer cavity in the multilayer thin film deposition cavity group are identical, all including: At least three strip targets arranged along the width direction of the substrate, denoted as target one, target two and target three, with a spacing of D between adjacent targets, and the power supply for the sputtering targets is a pulse power supply with an adjustable frequency range of 1kHz to 1000kHz. The substrate support is used to support the substrate and enable it to reciprocate linearly along a direction perpendicular to the transport direction during the deposition process. The distance of the movement is d, and d>D.

[0006] Preferably, valves 2, 3, 4, 5, 6, 7, 8, and 9 are sequentially arranged between the pre-vacuum chamber, the preheating and plasma cleaning chamber, the lower contact layer deposition chamber, the lower injection layer deposition chamber, the luminescent layer deposition chamber, the upper injection layer deposition chamber, the upper contact layer deposition chamber, the impurity activation chamber, and the cooling chamber. A valve 1 is also provided on the side of the pre-vacuum chamber away from the preheating and plasma cleaning chamber, and a valve 10 is also provided on the side of the cooling chamber away from the impurity activation chamber. Valve 2 is located between the pre-vacuum chamber and the preheating and plasma cleaning chamber. Valve 3 is located between the preheating and plasma cleaning chamber and the lower deposition contact layer chamber; valve 4 is located between the lower deposition contact layer chamber and the lower deposition injection layer chamber; valve 5 is located between the lower deposition injection layer chamber and the deposition luminescent layer chamber; valve 6 is located between the deposition luminescent layer chamber and the upper deposition injection layer chamber; valve 7 is located between the upper deposition injection layer chamber and the upper deposition contact layer chamber; valve 8 is located between the upper deposition contact layer chamber and the impurity activation chamber; and valve 9 is located between the impurity activation chamber and the cooling chamber.

[0007] Preferably, in the preheating and plasma cleaning chamber and the cooling chamber, the substrate support is also configured to drive the substrate to perform reciprocating linear motion, and the motion distance d is greater than D.

[0008] Preferably, the impurity activation cavity further includes a cooling plate, which is disposed below the substrate at a distance of [missing information]. It is connected to a circulating water pipe; the second heater is a rapid heating heater, used to raise the substrate temperature from T8 to the impurity activation temperature in a short time. .

[0009] Preferably, the target material in the lower contact layer cavity, the lower injection layer cavity, the deposition luminescent layer cavity, the upper injection layer cavity, and the upper contact layer cavity is strip-shaped.

[0010] A method for continuous deposition of a light-emitting device array includes the following specific steps: Step S1: Feeding and Pre-vacuuming: Open valve one of the pre-vacuum chamber, send the substrate into the pre-vacuum chamber, close valve one, start the first vacuum pump group to evacuate to the predetermined vacuum level, and simultaneously start the first heating device to heat the substrate to the first substrate temperature. To remove foreign matter adsorbed on the substrate surface, after a predetermined time, valve two is opened to push the substrate into the preheating and plasma cleaning chamber; Step S2: Preheating and Plasma Cleaning After the substrate enters the preheating and plasma cleaning chamber, valve two is closed, the second vacuum pump group is started to evacuate the vacuum, and the second heating device is started to heat the substrate to the second substrate temperature T2; cleaning gas is introduced through the second air inlet. Ar or While maintaining the predetermined gas pressure, at least two plasma sources are turned on to generate plasma to perform ion bombardment cleaning on the substrate surface. During the cleaning process, the substrate is controlled to reciprocate along its width direction, with a distance d greater than D. After cleaning, the plasma sources are turned off, valve three is opened, and the substrate is pushed into the cavity for depositing the lower contact layer. Step S3: Multilayer thin film deposition: After the substrate is pushed into the lower contact layer deposition cavity, valves four, five, six, and seven are opened in sequence. The substrate then enters the lower injection layer deposition cavity, the light-emitting layer deposition cavity, the upper injection layer deposition cavity, and the upper contact layer deposition cavity in sequence to deposit each functional layer. During the deposition process in the lower contact layer deposition cavity, the lower injection layer deposition cavity, the light-emitting layer deposition cavity, the upper injection layer deposition cavity, and the upper contact layer deposition cavity, the substrate temperature is maintained between 400°C and 700°C, and the substrate is controlled to reciprocate perpendicular to the transport direction with a movement distance d > D to ensure uniformity of large-area deposition. Step S4: Impurity Activation: After deposition, the substrate enters the impurity activation chamber, valve eight is closed and a vacuum is drawn, and the first heater is started to heat the substrate to [temperature missing]. An activation gas is introduced, and the second heater is activated, rapidly raising the substrate temperature from [previous temperature range]. Increase to impurity activation temperature and maintain the scheduled activation time. After activation, the second heater is turned off, and the cooling plate water circuit is turned on to lower the substrate temperature to [the desired temperature]. ; Step S5: Cooling and feeding: Wait until the substrate temperature drops to Then, the substrate is transferred to the cooling chamber, valve eight is closed, protective gas is introduced, and the cooling device is turned on to reduce the substrate temperature from T8 to room temperature. During the cooling process, the substrate is controlled to reciprocate, and the movement distance d is greater than D. When the substrate temperature reaches room temperature, valve nine is opened to push the substrate and its multilayer thin film structure out of the system, thus completing the fabrication of the light-emitting device.

[0011] Preferably, in step S3, the operations within the lower contact layer cavity, the lower injection layer cavity, the luminescent layer cavity, the upper injection layer cavity, and the upper contact layer cavity are as follows: Deposition of the contact layer cavity: controlling the substrate temperature to Sputtering gas is introduced, and the pulsed power supply for the lower contact layer target is turned on, allowing deposition to proceed to a thickness specified in the original text. ; Deposition of the implantation layer cavity: controlling the substrate temperature to Sputtering gas is introduced, and the pulsed power supply for the lower injection layer target is turned on, allowing deposition to proceed to the desired thickness. ; Deposition of the light-emitting layer cavity: controlling the substrate temperature to Sputtering gas is introduced, and the pulsed power supply to the luminescent target is turned on, allowing deposition to proceed to a thickness of [thickness value missing]. ; Deposition of the implantation layer cavity: controlling the substrate temperature to Sputtering gas is introduced, and the pulse power supply for the upper injection layer target is turned on, depositing to a thickness of [thickness value missing]. ; Depositing the upper contact layer cavity: controlling the substrate temperature to Sputtering gas is introduced, and the pulsed power supply to the upper contact layer target is turned on, allowing deposition to proceed to a thickness specified in the original text. .

[0012] Preferably, in step S3, if a high-efficiency device needs to be fabricated, a carrier blocking layer deposition step is added between the deposition of the injection layer cavity and the deposition of the light-emitting layer cavity, and another carrier blocking layer deposition step is added between the deposition of the injection layer cavity and the deposition of the contact layer cavity. The specific operation is as follows: After depositing the lower injection layer in the deposition lower injection layer cavity, the substrate enters the additional cavity 3B to deposit the first carrier blocking layer, the thickness of which is denoted as . The substrate then enters the deposition chamber to deposit the luminescent layer; after depositing the injection layer in the deposition chamber, the substrate enters the additional chamber 7B to deposit the second carrier blocking layer, the thickness of which is denoted as . Then, it enters the cavity for depositing the upper contact layer and deposits the upper contact layer.

[0013] Preferably, the duty cycle and frequency of the pulse power supply are adjustable. By adjusting the pulse parameters, high-density thin film deposition can be achieved at low temperatures of 400°C to 700°C, while avoiding atomic diffusion between adjacent thin film layers at high temperatures of 800°C to 1200°C.

[0014] Preferably, the substrate is an amorphous and low-melting-point substrate, and the multilayer thin film structure includes a lower contact layer, a lower injection layer, a light-emitting layer, an upper injection layer, and an upper contact layer, wherein the light-emitting layer is a single light-emitting layer or a stacked structure of multiple light-emitting layers to achieve broadband light emission.

[0015] Compared with related technologies, the continuous deposition system for fabricating multilayer thin film structures of light-emitting device arrays provided by this invention has the following advantages: 1. This invention employs the principle of magnetron sputtering, setting multiple rectangular targets in each sputtering cavity, along with a substrate holder that can swing left and right, allowing the substrate to move back and forth during thin film deposition. The arrangement of multiple targets generates multiple plasma sources, effectively improving the uniformity of the composition and thickness of the deposited film. This allows for the deposition of uniform multilayer thin films for fabricating light-emitting devices on large-area substrates without the need to cut the substrate into smaller pieces and place them in dish-shaped or spherical positions, overcoming the limitations of traditional MOCVD or MBE systems in large-area uniform deposition. 2. This invention allows the substrate and film to be pushed into the next chamber after each film deposition without breaking the vacuum, until the activation chamber activates the impurities in the film. The single-function chamber process reduces the impact of different films and dopants on the quality of the next film, and also reduces the impact of environmental pollution on the quality of the film, greatly improving the product yield. It solves the problems of traditional MOCVD or MBE systems where a single chamber is used to prepare multilayer films, and the upper and lower films with different materials and impurities will seriously affect the film quality. The impurity compensation problem is prominent, making it difficult to prepare high-performance devices. In addition, the activation process requires cooling, breaking the vacuum, removing the substrate, and then placing it in the activation system chamber for vacuuming, heating, and activation, which is susceptible to pollution caused by atmospheric adsorption.

[0016] 3. By employing pulsed power supplies in each deposition chamber, this invention increases the energy of material ions during deposition, thereby enabling the production of thin films with excellent structures at lower substrate temperatures. Due to the reduced deposition temperature, the deposited substrate can be made of materials with lower melting points and lower costs, such as glass, ceramic substrates, and plastics, thus reducing production costs. 4. This invention places multiple targets at a certain interval and simultaneously drives the substrate to move left and right during the deposition process. By controlling the distance and frequency of the left and right movement, the thickness and composition of the resulting film are effectively reduced as a function of distance, further improving the uniformity of film thickness and composition with position, which helps to improve the performance and stability of the light-emitting device. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the process for continuous deposition of light-emitting device arrays; Figure 2 This is a cross-sectional view of the one-dimensional and two-dimensional light-emitting device arrays fabricated on the same substrate according to the present invention; Figure 3 This is a block diagram of a multi-cavity vacuum system for continuous deposition fabrication of light-emitting devices and light-emitting device array thin film structures, as described in this invention. Figure 4 This is a thin film structure diagram used in the present invention for continuous deposition to manufacture light-emitting devices and light-emitting device arrays; Figure 5 This is a schematic diagram of the pre-vacuum chamber. Figure 6 A schematic diagram of the preheating and plasma cleaning chamber; Figure 7 This is a schematic diagram of the structure of one type of deposition cavity; Figure 8 This is a schematic diagram of the structure of the impurity activation chamber; Figure 9 This is a schematic diagram of the cooling chamber. Figure 10 The graph shows the thickness of a single target film as a function of distance, along with a structural schematic. Figure 11 This is a system block diagram of the deposited light-emitting device structure.

[0018] The diagram is labeled as follows: 1. Pre-vacuum chamber; 2. Preheating and plasma cleaning chamber; 3. Lower contact layer deposition chamber; 4. Lower injection layer deposition chamber; 5. Emissive layer deposition chamber; 6. Upper injection layer deposition chamber; 7. Upper contact layer deposition chamber; 8. Impurity activation chamber; 9. Cooling chamber; 10. Substrate; 11. Light-emitting element; 12. Conductive lead; 13. Conductive air bridge; 14. Valve 1; 15. Valve 2; 16. Valve 3; 17. Valve 4; 18. Valve 5; 19. Valve 6; 20. Valve 7; 21. Valve 8; 22. Valve 9; 23. Valve 10; 24. First heating device; 25. First air inlet; 26. Second air inlet; 27. Second heating device; 28. Third heating device; 29. ​​Third air inlet; 30. Baffle; 31. First heater; 32. Second heater; 33. Fourth air inlet; 34. Fifth air inlet. Detailed Implementation

[0019] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0020] For reference Figures 2-4 As shown in the figure, X1 is the first semiconductor layer; X2 is the second semiconductor layer; X3 is the third semiconductor layer; X4 is the fourth semiconductor layer; and X5 is the fifth semiconductor layer. The lower contact layer, lower injection layer, light-emitting layer, upper injection layer, and upper contact layer correspond to the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the fourth semiconductor layer, and the fifth semiconductor layer, respectively.

[0021] Example 1 For reference Figures 1 to 11 As shown, a continuous deposition system for fabricating a multilayer thin film structure of a light-emitting device array is disclosed. The system includes: a substrate transport mechanism, a control system, and multiple functional cavities arranged in series along the transport direction of the substrate 10. The multiple functional cavities include: Pre-vacuum chamber 1: It is equipped with a first air inlet 25, a first vacuum pump group and a first heating device 24, which are used to pre-vacuum and preheat the incoming substrate 10. Preheating and plasma cleaning chamber 2: It is equipped with a second air inlet 26, a second vacuum pump group, a second heating device 27 and at least two plasma sources for plasma bombardment cleaning of substrate 10. Multilayer thin film deposition chamber assembly: including a lower contact layer deposition chamber 3, a lower injection layer deposition chamber 4, a light-emitting layer deposition chamber 5, an upper injection layer deposition chamber 6, and an upper contact layer deposition chamber 7. Each of the lower contact layer deposition chamber 3, lower injection layer deposition chamber 4, light-emitting layer deposition chamber 5, upper injection layer deposition chamber 6, and upper contact layer deposition chamber 7 is equipped with a third air inlet 29, a third vacuum pump assembly, a third heating device 28, multiple sputtering targets, and corresponding pulse power supplies. Impurity activation chamber 8: It is equipped with a fourth air inlet 33, a fourth vacuum pump group, a first heater 31 and a second heater 32, which are used to rapidly thermally anneal and activate the deposited film. Cooling chamber 9: It is equipped with a fifth air inlet 34, a fifth vacuum pump group and a cooling device, which are used to cool the substrate 10 to room temperature; Substrate transfer mechanism: disposed between pre-vacuum chamber 1, preheating and plasma cleaning chamber 2, lower contact layer deposition chamber 3, lower implantation layer deposition chamber 4, light-emitting layer deposition chamber 5, upper implantation layer deposition chamber 6, upper contact layer deposition chamber 7, impurity activation chamber 8 and cooling chamber 9, used to transfer substrate 10 sequentially from pre-vacuum chamber 1 to cooling chamber 9 in a vacuum environment; Control system: It is electrically connected to the vacuum pump group, heating device, plasma source, sputtering target power supply and transmission mechanism of the pre-vacuum chamber 1, preheating and plasma cleaning chamber 2, deposition lower contact layer chamber 3, deposition lower injection layer chamber 4, deposition luminescent layer chamber 5, deposition upper injection layer chamber 6, deposition upper contact layer chamber 7, impurity activation chamber 8 and cooling chamber 9, respectively, and is used to control gas pressure, temperature and process time; Among them, the internal structures of the lower contact layer cavity 3, lower injection layer cavity 4, deposition luminescent layer cavity 5, upper injection layer cavity 6, and upper contact layer cavity 7 in the multilayer thin film deposition cavity group are the same, and all include: At least three strip targets are arranged along the width direction of the substrate 10, denoted as target one, target two and target three, with a spacing of D between adjacent targets. The power supply for the sputtering targets is a pulse power supply with an adjustable frequency range of 1kHz to 1000kHz. The substrate support is used to support the substrate 10 and make it reciprocate linearly along a direction perpendicular to the transport direction during the deposition process. The movement distance is d, and d>D.

[0022] Valves 15, 16, 17, 18, 19, 20, 21, and 22 are sequentially arranged between the pre-vacuum chamber 1, the preheating and plasma cleaning chamber 2, the lower contact layer deposition chamber 3, the lower injection layer deposition chamber 4, the luminescent layer deposition chamber 5, the upper injection layer deposition chamber 6, the upper contact layer deposition chamber 7, the impurity activation chamber 8, and the cooling chamber 9. Valve 14 is also located on the side of the pre-vacuum chamber 1 furthest from the preheating and plasma cleaning chamber 2. Valve 23 is also located on the side of the cooling chamber 9 furthest from the impurity activation chamber 8. Valve 25 is located between the pre-vacuum chamber 1 and the... Between the preheating and plasma cleaning chamber 2, valve 3 16 is located between the preheating and plasma cleaning chamber 2 and the lower contact layer chamber 3; valve 4 17 is located between the lower contact layer chamber 3 and the lower injection layer chamber 4; valve 5 18 is located between the lower injection layer chamber 4 and the deposition luminescent layer chamber 5; valve 6 19 is located between the deposition luminescent layer chamber 5 and the upper injection layer chamber 6; valve 7 20 is located between the upper injection layer chamber 6 and the upper contact layer chamber 7; valve 8 21 is located between the upper contact layer chamber 7 and the impurity activation chamber 8; and valve 9 22 is located between the impurity activation chamber 8 and the cooling chamber 9.

[0023] In the preheating and plasma cleaning chamber 2 and the cooling chamber 9, the substrate support is also configured to drive the substrate 10 to perform reciprocating linear motion, with a motion distance d greater than D.

[0024] The impurity activation chamber 8 also includes a cooling plate, which is disposed below the substrate 10 at a distance of [missing information]. It is connected to a circulating water pipe; the second heater 32 is a rapid heating heater, used to raise the temperature of the substrate 10 from T8 to the impurity activation temperature in a short time. .

[0025] The targets in the lower contact layer cavity 3, the lower injection layer cavity 4, the deposition luminescent layer cavity 5, the upper injection layer cavity 6, and the upper contact layer cavity 7 are strip-shaped; It should be noted that the first feature of this invention is that it provides a multi-cavity vacuum system, see [link to relevant documentation]. Figure 3 This allows for the continuous deposition of thin film structures used to fabricate light-emitting devices and light-emitting device arrays, see... Figure 4The thin film structure required for fabricating a light-emitting device includes a substrate 10, a conductive lower contact layer, a lower carrier injection layer, at least one light-emitting layer, an upper carrier injection layer, and an upper contact layer. To improve the luminous efficiency and frequency characteristics of the fabricated device, multiple light-emitting layers can be used, each emitting light within a specific frequency range, resulting in a broad overall emission spectrum. Furthermore, to achieve better electro-optical conversion efficiency, carrier confinement layers can be deposited between the upper injection layer and the light-emitting layer, and between the lower light-emitting layer and the light-emitting layer. However, for simplicity, multiple light-emitting layers can be simplified to a single light-emitting layer. Therefore, in this system... Figure 4 Only one light-emitting layer is shown in the image; in addition, it can be seen that... Figure 4 In the multi-cavity vacuum system shown, an additional cavity is added between the under-deposition contact layer cavity 3 and the under-deposition injection layer cavity 4. This cavity B can be used to deposit a first carrier blocking layer between the lower injection layer and the light-emitting layer, the thickness of which is... An additional cavity is added between the deposition contact layer cavity 7 and the impurity activation cavity 8. This cavity It can be used to deposit a second carrier blocking layer between the light-emitting layer and the upper injection layer, with a blocking layer thickness of t. b2 These carrier blocking layers can reduce carrier overflow, thereby improving the luminous efficiency of light-emitting devices; It should be noted that, in Figure 3 In the process, the pre-vacuum chamber 1, the preheating and plasma cleaning chamber 2, the lower contact layer deposition chamber 3, the lower injection layer deposition chamber 4, the light-emitting layer deposition chamber 5, the upper injection layer deposition chamber 6, the upper contact layer deposition chamber 7, the impurity activation chamber 8, and the cooling chamber 9 are all equipped with a substrate 10 transfer mechanism to transfer the substrate 10. Each chamber has at least one mechanical vacuum pump and a molecular pump, which can draw gas molecules input from the gas inlet into the chamber and maintain the gas pressure inside the chamber. It should be further explained that a substrate 10 can be fed into the pre-vacuum chamber 1 through valve 14 for pre-vacuuming, and at the same time, the temperature of the substrate 10 can be raised to a predetermined first substrate 10 temperature. After pre-vacuuming and preheating to remove foreign atoms and molecules adsorbed or permeated on the surface of substrate 10, the substrate 10 is pushed into the preheating and plasma cleaning chamber 2 via the substrate 10 transfer mechanism, and preheating continues until the substrate 10 reaches the specified temperature. Simultaneously, plasma sources one, two, and three in the preheating and plasma cleaning chamber 2 can be activated for surface ion bombardment cleaning. After cleaning, plasma sources one, two, and three in the preheating and plasma cleaning chamber 2 are turned off, and the substrate 10 is pushed into the deposition contact layer chamber 3 through the substrate 10 transfer mechanism, and the temperature of the substrate 10 is controlled to... And turn on the sputtering power supply of each target material in the lower contact layer cavity 3, sputter the lower contact layer, and the current contact layer thickness reaches Afterwards, the sputtering power supplies for each target are turned off, and the substrate 10 is pushed into the deposition injection layer cavity 4 through the substrate 10 transfer mechanism, while the temperature of the substrate 10 is controlled to... Then, the sputtering power supply of each target material in the deposition injection layer cavity 4 is turned on to sputter the injection layer. The thickness of the injection layer reaches... Then, the sputtering power supplies for each target are turned off, and the substrate 10 is pushed into the deposition light-emitting layer cavity 5 through the substrate 10 transfer mechanism, while the temperature of the substrate 10 is controlled to... Then, the sputtering power supplies for each target material in the deposition cavity 5 are turned on to sputter the luminescent layer. When the thickness of the luminescent layer reaches... Then, the sputtering power supplies for each target are turned off, and the substrate 10 is pushed into the deposition implantation layer cavity 6 through the substrate 10 transfer mechanism, while the temperature of the substrate 10 is controlled to... Then, the sputtering power supply of each target material in the upper injection layer cavity 6 is turned on to sputter the upper injection layer. When the thickness of the upper injection layer reaches... Then, the sputtering power supplies for each target are turned off, and the substrate 10 is pushed into the upper contact layer deposition cavity 7 via the substrate 10 transfer mechanism, while the temperature of the substrate 10 is controlled to... Then, the sputtering power supply of each target material in the upper contact layer deposition cavity 7 is turned on to sputter the upper contact layer. When the thickness of the upper contact layer reaches... Afterwards, the sputtering power supplies for each target are turned off. The substrate 10 is then pushed into the impurity activation chamber 8 via the substrate 10 transfer mechanism. After the substrate 10 temperature is controlled to T8, the activation heaters in the impurity activation chamber 8 are turned on to raise the substrate 10 temperature to T8 in a short time. Impurities in each layer are activated, and the activation of impurities is carried out for a predetermined time. Afterwards, all activation heaters are turned off, and the substrate 10 is pushed into the cooling chamber 9 through the substrate 10 transfer mechanism. After the temperature of the substrate 10 is controlled to T9, the water in the cooling chamber 9 connected to the cooling plate water pipe is turned on to lower the temperature of the substrate 10 and its multilayer structure T9 to room temperature. When the temperature reaches room temperature, the substrate 10 and its multilayer structure impurities are activated for a predetermined time. Afterwards, all activation heaters are turned off, and finally valve 1023 is opened to push the substrate 10 and its multilayer structure out of the cooling cavity 9, thus completing the deposition of the thin film structure of the light-emitting device. In addition, the power supply for each target in the deposition chamber 3, deposition chamber 4, deposition chamber 5, deposition chamber 6, and deposition chamber 7 is a pulsed power supply. High-quality thin films are deposited at a low substrate temperature between 400°C and 700°C, while avoiding atomic diffusion between adjacent films under the high temperature MOCVD deposition conditions of 800°C-1200°C.

[0026] Finally, this system employs the principle of magnetron sputtering, setting multiple rectangular targets in each sputtering cavity, along with a substrate 10 holder that can swing left and right, allowing the substrate 10 to move back and forth during thin film deposition. The arrangement of multiple targets generates multiple plasma sources, effectively improving the uniformity of the composition and thickness of the deposited film. This allows for the deposition of uniform multilayer thin films for fabricating light-emitting devices on large-area substrates 10, eliminating the need to cut the substrate 10 into smaller pieces and place it in a dish-shaped or spherical position, thus overcoming the limitations of traditional MOCVD or MBE systems in large-area uniform deposition. After each film deposition, this system can push the substrate 10 along with the film into the next chamber without breaking the vacuum, until the activation chamber activates the impurities in the film. The single-function chamber process reduces the impact of different films and different dopants on the quality of the next film, and also reduces the impact of external environmental pollution on the quality of the film, which greatly improves the product yield. It solves the problems of traditional MOCVD or MBE systems where the upper and lower films with different materials and impurities seriously affect the film quality, the impurity compensation problem is prominent, and it is difficult to fabricate high-performance devices. In addition, the activation process requires cooling, breaking the vacuum, removing the substrate 10, and then placing it in the activation system chamber for vacuuming, heating, and activation, which is susceptible to pollution caused by atmospheric adsorption.

[0027] This system increases the energy of material ions during deposition by using pulsed power supplies in each deposition chamber, thereby obtaining thin films with excellent structures at a lower substrate temperature. Due to the lower deposition temperature, the deposited substrate can be made of materials with lower melting points and lower costs, such as glass, ceramic substrates and plastics, thus reducing production costs. This system places multiple targets at a certain interval and simultaneously drives the substrate 10 to move left and right during the deposition process. By controlling the distance and frequency of the left and right movement, the thickness and composition of the resulting film are effectively reduced as a function of distance, further improving the uniformity of film thickness and composition with position, which helps to improve the performance and stability of the light-emitting device.

[0028] Example 2 For reference Figures 1 to 11 As shown, a continuous deposition method for a light-emitting device array includes the following specific steps: Step S1: Feeding and Pre-vacuuming: Open valve 14 of the pre-vacuum chamber 1, and send the substrate 10 into the pre-vacuum chamber 1. After closing valve 14, start the first vacuum pump group to evacuate to the predetermined vacuum level, and at the same time start the first heating device 24 to heat the substrate 10 to the first substrate 10 temperature. To remove foreign matter adsorbed on the surface of substrate 10, after a predetermined time, valve 2 15 is opened to push substrate 10 into preheating and plasma cleaning chamber 2. Step S2: Preheating and Plasma Cleaning After substrate 10 enters the preheating and plasma cleaning chamber 2, valve 15 is closed, the second vacuum pump group is started to evacuate, and the second heating device 27 is started to heat substrate 10 to the second substrate 10 temperature. Cleaning gas is introduced through the second air inlet 26. Ar or While maintaining a predetermined gas pressure, at least two plasma sources are turned on to generate plasma to perform ion bombardment cleaning on the surface of substrate 10. During the cleaning process, substrate 10 is controlled to reciprocate along its width direction, with a distance d greater than D. After cleaning, the plasma sources are turned off, valve 316 is opened, and substrate 10 is pushed into the deposition contact layer cavity 3. In step S2, plasma cleaning is used to effectively remove impurities and contaminants from the surface of substrate 10 through ion bombardment, thereby improving the cleanliness and activity of the substrate 10 surface, enhancing the adhesion between the thin film and substrate 10, and helping to improve the stability and lifespan of the light-emitting device. Step S3: Multilayer thin film deposition: After the substrate 10 is pushed into the lower contact layer cavity 3, valves 17, 18, 19, and 20 are opened in sequence. The substrate 10 then enters the lower injection layer cavity 4, the light-emitting layer cavity 5, the upper injection layer cavity 6, and the upper contact layer cavity 7 in sequence to deposit each functional layer. During the deposition process of the lower contact layer cavity 3, the lower injection layer cavity 4, the light-emitting layer cavity 5, the upper injection layer cavity 6, and the upper contact layer cavity 7, the temperature of the substrate 10 is maintained between 400°C and 700°C, and the substrate 10 is controlled to reciprocate perpendicular to the transport direction with a movement distance d > D to ensure uniformity of large-area deposition. In step S3, if a high-efficiency device is to be fabricated, a carrier blocking layer deposition step is added between the deposition injection layer cavity 4 and the deposition light-emitting layer cavity 5, and another carrier blocking layer deposition step is added between the deposition injection layer cavity 6 and the deposition contact layer cavity 7. The specific operation is as follows: After the injection layer is deposited in the injection layer cavity 4, the substrate 10 enters the additional cavity 3B to deposit the first carrier blocking layer, the thickness of which is denoted as . Then, the substrate 10 enters cavity 5 to deposit the luminescent layer; after depositing the injection layer in cavity 6, the substrate 10 enters additional cavity 7B to deposit the second carrier blocking layer, the thickness of which is denoted as . Then it enters the upper contact layer cavity 7 to deposit the upper contact layer; Step S4: Impurity Activation: After deposition, the substrate 10 enters the impurity activation chamber 8. Valve 821 is closed and a vacuum is drawn. The first heater 31 is started to heat the substrate 10 to T8. Activation gas is introduced, and the second heater 32 is started to raise the temperature of the substrate 10 from T8 to the impurity activation temperature Tjf in a short time and maintain it for the predetermined activation time. After activation, the second heater 32 is turned off and the cooling plate water circuit is turned on to reduce the temperature of substrate 10 to T8. Step S5: Cooling and feeding: After the substrate 10 temperature drops to T8, the substrate 10 is transferred to the cooling chamber 9, valve 821 is closed, protective gas is introduced, and the cooling device is turned on to lower the substrate 10 temperature from T8. The temperature is lowered to room temperature. During the cooling process, the substrate 10 is controlled to reciprocate, with a movement distance d greater than D. When the temperature of the substrate 10 reaches room temperature, valve 22 is opened to push the substrate 10 and its multilayer thin film structure out of the system, thus completing the fabrication of the light-emitting device.

[0029] The duty cycle and frequency of the pulse power supply are adjustable. By adjusting the pulse parameters, high-density thin film deposition can be achieved at low temperatures of 400℃ to 700℃, while avoiding atomic diffusion between adjacent thin film layers at high temperatures of 800℃ to 1200℃.

[0030] The substrate 10 is an amorphous and low-melting-point substrate 10. The multilayer thin film structure includes a lower contact layer, a lower injection layer, a light-emitting layer, an upper injection layer, and an upper contact layer. The light-emitting layer is a single light-emitting layer or a stacked structure of multiple light-emitting layers to achieve broadband light emission.

[0031] Specifically, during the cleaning and deposition process, the substrate 10 is controlled to reciprocate along the width direction or perpendicular to the transport direction, and the movement distance d is greater than D. This ensures the uniformity of large-area deposition, making the film thickness and performance more consistent across the entire surface of the substrate 10, thereby improving the luminescence uniformity and overall performance of the light-emitting device. Furthermore, in step S4, by controlling the temperature and introducing activation gas, the temperature of the substrate 10 is raised to the impurity activation temperature in a short time and maintained for a predetermined time, which can effectively activate the impurities in the deposited thin film, improve the electrical performance of the thin film, and thus improve the luminous efficiency and working stability of the light-emitting device. Furthermore, in step S5, a protective gas is introduced and the cooling device is turned on during the cooling process, which can prevent the substrate 10 and the thin film from being affected by oxidation and other adverse effects during the cooling process. At the same time, controlling the reciprocating motion of the substrate 10 helps to further improve the cooling uniformity, protect the structure and performance of the light-emitting device, and finally safely push the prepared light-emitting device out of the system.

[0032] Example 3 For reference Figure 3 As shown, Figure 3 This is a cross-sectional view of a one-dimensional and two-dimensional light-emitting device array manufactured on the same substrate 10 according to the present invention; the light-emitting element 11, the conductive lead 12 and the conductive air bridge 13 are electrically connected; As can be seen from the figure, Figure 3 From left to right: The one-dimensional light-emitting device array has N light-emitting elements 11, and each light-emitting element 11 is a multilayer semiconductor thin film structure; The multilayer semiconductor thin film structure includes, from bottom to top: a substrate 10, a lower contact layer being a first semiconductor layer X1, a lower injection layer being a second semiconductor layer X2, a light-emitting layer being a third semiconductor layer X3, an upper injection layer being a fourth semiconductor layer X4, an upper contact layer being a fifth semiconductor layer X5, and a conductive air bridge 13 and a conductive lead 12 being fixedly connected to the light-emitting element 11 via a metal.

[0033] Example 4 For reference Figure 3 As shown, Figure 3 This is a block diagram of a multi-cavity vacuum system for continuous deposition fabrication of light-emitting devices and light-emitting device array thin film structures, as described in this invention. As can be seen from the figure, Figure 3 From left to right, the nine chambers are: pre-vacuum chamber 1, preheating and plasma cleaning chamber 2, lower contact layer deposition chamber 3, lower implantation layer deposition chamber 4, light-emitting layer deposition chamber 5, upper implantation layer deposition chamber 6, upper contact layer deposition chamber 7, impurity activation chamber 8, and cooling chamber 9. Each chamber can automatically evacuate and has the following functions: pre-vacuum, preheating and plasma cleaning, lower contact layer deposition, lower implantation layer deposition, light-emitting layer deposition, upper implantation layer deposition, upper contact layer deposition, and impurity activation. Cooling chamber 9 is used to cool the activated substrate 10. It should be noted that the pre-vacuum chamber 1, the preheating and plasma cleaning chamber 2, the lower contact layer deposition chamber 3, the lower injection layer deposition chamber 4, the light-emitting layer deposition chamber 5, the upper injection layer deposition chamber 6, the upper contact layer deposition chamber 7, the impurity activation chamber 8, and the cooling chamber 9 are all vacuum channels. When the valves on the surface of the chambers are opened or closed, they connect and send the substrate 10 to the next chamber. When the subsequent chamber is empty, the substrate 10 can be sent in to complete the fabrication of the multilayer thin film structure of the light-emitting element 11.

[0034] Example 5 For reference Figure 4 As shown, Figure 4 This is a diagram of a thin film structure used in this invention for continuous deposition to manufacture light-emitting devices and light-emitting device arrays. It is deposited on a large-area substrate 10 by a multi-cavity vacuum system, and shows the thin film structure of the fabricated one-dimensional and two-dimensional light-emitting devices. As can be seen from the figure, each light-emitting element 11 is a multilayer semiconductor thin film structure; Figure 4 From bottom to top, the layers are: substrate 10, lower contact layer, lower injection layer, light-emitting layer, upper injection layer, and upper contact layer. The lower contact layer is the first semiconductor layer, the lower injection layer is the second semiconductor layer, the light-emitting layer is the third semiconductor layer, the upper injection layer is the fourth semiconductor layer, and the upper contact layer is the fifth semiconductor layer. The conductive air bridge 13 and the lead are connected by metal. The thickness of each layer is different. Furthermore, the contact layer cavity 3 is deposited to control the substrate temperature to... Sputtering gas is introduced, and the pulsed power supply for the lower contact layer target is turned on, allowing deposition to proceed to a thickness specified in the original text. ; Deposition of the implantation layer cavity 4: Controlling the substrate temperature to Sputtering gas is introduced, and the pulsed power supply for the lower injection layer target is turned on, allowing deposition to proceed to the desired thickness. ; Deposition of the light-emitting layer cavity 5: Controlling the substrate temperature to Sputtering gas is introduced, and the pulsed power supply to the luminescent target is turned on, allowing deposition to proceed to a thickness of [thickness value missing]. ; Deposition of the implantation layer cavity 6: Controlling the substrate temperature to Sputtering gas is introduced, and the pulse power supply for the upper injection layer target is turned on, depositing to a thickness of [thickness value missing]. ; Depositing the upper contact layer cavity 7: Controlling the substrate temperature to Sputtering gas is introduced, and the pulsed power supply to the upper contact layer target is turned on, allowing deposition to proceed to a thickness specified in the original text. .

[0035] Example 6 For reference Figure 5 As shown, Figure 5 This is a schematic diagram of the pre-evacuation chamber 1; As shown in the figure, a first heating device 24 is installed inside the pre-vacuum chamber 1. A valve 14 is installed on the left side of the pre-vacuum chamber 1, and a valve 25 is installed on the right side of the pre-vacuum chamber 1. A first air inlet 25 is installed at the top of the pre-vacuum chamber 1. The first air inlet 25 is referred to as: air inlet. air intake and air intake ; The bottom of the pre-evacuation chamber 1 is equipped with a vacuum pump interface for connecting an external first vacuum pump group to perform vacuum evacuation. The distance between the substrate 10 and the resistance wire inside the first heating device 24 is... Furthermore, pre-vacuuming requires heating the substrate 10 so that the adsorption on the surface of the substrate 10 is removed due to thermal desorption. It should be noted that the first heating device 24 uses resistance wire for heating. The specific structure and working principle will not be described in detail. The heating method is existing technology. It should be further explained that after valves 14 and 15 in the pre-vacuum chamber 1 are opened, the substrate 10 can enter the pre-vacuum chamber 1, controlling the distance between the substrate 10 and the first heating device 24. After closing valve 14 and valve 25, a vacuum can be drawn first, and the first heating device 24 can be turned on to heat the substrate 10. If necessary, the substrate 10 can also be heated through the air inlet. air intake and air intake Gas is introduced into the pre-vacuum chamber 1. After pre-vacuuming, the substrate 10 is pushed out into the adjacent preheating and plasma cleaning chamber 2 by opening the valve 15 on the right and using the substrate 10 transfer mechanism.

[0036] Example 7 For reference Figure 6 As shown, Figure 6 for Figure 3 Schematic diagram of the preheating and plasma cleaning chamber 2; As shown in the figure, valve 2 15 is located on the left side of the preheating and plasma cleaning chamber 2, valve 3 16 is located on the right side of the preheating and plasma cleaning chamber 2, and a second air inlet 26 is located on the top of the preheating and plasma cleaning chamber 2. The second air inlet 26 is referred to as: air inlet air intake and air intake ; The bottom of the preheating and plasma cleaning chamber 2 is equipped with a vacuum pump interface for connecting a second vacuum pump group to evacuate the vacuum. The bottom of the preheating and plasma cleaning chamber 2 is also equipped with three plasma sources, referred to as plasma source one, plasma source two and plasma source three. Plasma electrodes are installed on the surfaces of plasma source one, plasma source two and plasma source three, and the distance between plasma source one, plasma source two and plasma source three is D. The distance between the top of plasma source one, plasma source two, and plasma source three and the substrate 10 is all... Furthermore, plasma source one, plasma source two, and plasma source three have a certain depth and are all rectangular in shape; It should be noted that, in order to ensure that the substrate 10 is heated evenly, the substrate 10 can move a distance of d to the left and right, and move back and forth. The operation method is as follows: heat the substrate 10 with an electric heating wire, and then simultaneously turn on plasma source one, plasma source two and plasma source three to perform plasma bombardment cleaning of the substrate 10 for a few minutes. At the same time, the cleaning time can be selected according to the actual degree of contamination. Different times can be selected for different contamination conditions, which will not be elaborated here. It should be noted that in order to ensure that the substrate 10 is cleaned evenly, the substrate 10 can move back and forth. The purpose of using three plasma sources is to make the plasma density uniform; It should be further explained that, in this preheating and plasma cleaning chamber 2, after valves three 16 and four 17 are opened, the substrate 10 can be allowed to enter this chamber through the substrate 10 transfer mechanism, controlling the distance between the substrate 10 and the second heating device 27. And control the distance between the substrate 10 and plasma source one, plasma source two and plasma source three to After closing valves 16 and 17, a vacuum can be drawn first, and the second heating device 27 can be turned on to heat the substrate 10. At this point, the cleaning gas is passed through the air inlet. air intake and air intake Gas is introduced into the preheating and plasma cleaning chamber 2. After controlling the gas pressure, the power supply of plasma source one, plasma source two, and plasma source three is turned on. The generated plasma cleans the surface of the substrate 10. After cleaning is completed, the power supply of plasma source one, plasma source two, and plasma source three is turned off. Valve four 17 on the right side of the preheating and plasma cleaning chamber 2 is opened, and the substrate 10 is pushed out into the adjacent lower contact layer deposition chamber 3, lower injection layer deposition chamber 4, light-emitting layer deposition chamber 5, upper injection layer deposition chamber 6, and upper contact layer deposition chamber 7. During the cleaning process in the preheating and plasma cleaning chamber 2, the substrate 10 is moved left and right by a distance d. d>D is selected to improve the uniformity of preheating and cleaning. Example 8 For reference Figure 7 As shown, Figure 7 This is a schematic diagram of the structure of one of the following cavities: the lower contact layer cavity 3, the lower injection layer cavity 4, the deposition luminescent layer cavity 5, the upper injection layer cavity 6, and the upper contact layer cavity 7. The internal structures are all the same. Only the lower contact layer cavity 3 is shown in the figure. As shown in the figure, valve 3 16 is provided on the left side of the lower contact layer cavity 3, valve 4 17 is provided on the right side of the lower contact layer cavity 3, and a third air inlet 29 is provided at the top of the lower contact layer cavity 3. The third air inlet 29 is referred to as: air inlet air intake and air intake Argon and nitrogen can be introduced. A vacuum pump interface is provided at the bottom of the contact layer cavity 3. A vacuum can be drawn by connecting an external third vacuum pump group. A baffle 30 is also provided under the substrate 10 to block it during pre-sputtering and remove it during thin film deposition and growth. It should be noted that there are at least three pulse power supplies, and there may also be radio frequency and DC power supplies; target material one, target material two, and target material three or more targets can be mounted on it. The rectangular shape of the targets includes spliced ​​targets and integral targets. The spacing between targets is D. The movable distance of substrate 10 is d. In order to achieve uniform film deposition, substrate 10 can move back and forth. The operation method is as follows: after the substrate 10 is pushed into the cavity, the corresponding valve is closed, the vacuum is evacuated to a high vacuum of 10⁻⁶ Torr, the temperature is raised to the deposition temperature, a certain proportion of argon and nitrogen is introduced to the deposition pressure, and the power is applied for glow discharge pre-sputtering for 10 minutes to clean the target surface. At this time, the baffle 30 on the substrate 10 is opened to start the deposition and growth of the thin film.

[0037] It should be further explained that the deposition of the lower contact layer cavity 3, the deposition of the lower injection layer cavity 4, the deposition of the luminescent layer cavity 5, the deposition of the upper injection layer cavity 6 and the deposition of the upper contact layer cavity 7 of the present invention are configured as follows; The depths of the lower contact layer cavity 3, the lower injection layer cavity 4, the deposition luminescent layer cavity 5, the upper injection layer cavity 6, and the upper contact layer cavity 7 are 150 cm. The movable distance d of substrate 10 is 20cm; The target material has a width of 25cm and a depth of 130cm; The spacing D of the targets is 30cm; The spacing between the heating wires is 10cm; The area covered by the heating wire is 150×130cm; The pulse power supply is 1000-100kHz and is adjustable; Vacuum pumps include mechanical pumps and molecular pumps, and can evacuate to a vacuum level of 10. -6 torr; The third heating device 28 uniformly heats the substrate 10 to room temperature (25°C to 1000°C), and the substrate 10 moves left and right with a distance of 0-30cm. The air inlet can allow argon and nitrogen to pass through; The gas pressure can be in the range of 2 mtorr-200 mtorr to generate plasma; The baffle 30 is a retractable structure that blocks the substrate 10 during the pre-sputtering period and is removed during the deposition period to protect the substrate 10.

[0038] Furthermore, in this deposition contact layer cavity 3, after valves five 18 and six 19 are opened, the substrate 10 can be allowed to enter the deposition contact layer cavity 3 through the substrate transfer mechanism, controlling the distance between the substrate 10 and the third heating device 28 to Z1, and controlling the distance between the substrate 10 and targets one, two, and three to Z1. After closing valves 5 (18) and 6 (19), a vacuum is first drawn, and the third heating device 28 is turned on or maintained to heat the substrate 10 to T3. At this time, the sputtering gas is introduced through the inlet. air intake and air intake Gas is introduced into the lower contact layer cavity 3. After controlling the gas pressure, the power supply of sputtering targets 1, 2, and 3 is turned on to generate plasma sputtering material for targets 1, 2, and 3. After sputtering to the predetermined thickness, the power supply of sputtering targets 1, 2, and 3 is turned off. Then, valve 6 19 on the right is opened, and the substrate 10 is pushed out to the adjacent lower injection layer cavity 4, light-emitting layer cavity 5, upper injection layer cavity 6, and upper contact layer cavity 7. During the deposition process, the substrate 10 is moved left and right by a distance d, where d > D, and D is the distance between two adjacent plasma sources to improve the uniformity of the deposited film. It is worth noting that, in Figure 3 The lower contact layer cavity 3, lower injection layer cavity 4, light-emitting layer cavity 5, upper injection layer cavity 6, and upper contact layer cavity 7 are all for depositing multilayer film structures for light-emitting devices. Therefore, the structures of these cavities are the same. The differences lie in the materials of target one, target two, and target three, for example: The contact layer cavity 3 is deposited. The materials of target one, target two and target three are: highly silicon-doped gallium nitride. Highly silicon-doped GaN is often used to form good ohmic contacts, reduce contact resistance and improve current injection efficiency. The cavity 4 of the deposited injection layer is made of the following materials: low-silicon-doped gallium nitride. The low-silicon-doped GaN layer is used to provide channels for electron injection while maintaining a low resistivity, which helps to facilitate the effective injection and transport of electrons. The cavity 5 for depositing the light-emitting layer, with targets 1, 2, and 3 made of indium gallium nitride (InxGa1-xN), allows for the adjustment of the bandgap width of the light-emitting layer by changing the ratio of indium (In) to gallium (Ga), thereby enabling the emission of light at different wavelengths, such as blue, green, or yellow light. This is the key layer for realizing the light-emitting function in the light-emitting device. The upper injection layer cavity 6 is deposited. The target one, target two and target three materials are: low zinc-doped gallium nitride. The low zinc-doped GaN layer is used to provide a channel for hole injection, similar to the lower injection layer, but usually optimized for hole injection and transport. The upper contact layer cavity 7 is deposited. The materials of target one, target two and target three are: highly zinc-doped gallium nitride or magnesium-doped gallium nitride. The highly zinc-doped or magnesium-doped GaN layer is used to form a good ohmic contact, reduce the contact resistance of holes, and improve the hole injection efficiency. Corresponding to the lower contact layer, they together form the current path of the light-emitting device.

[0039] Example 9 For reference Figure 8 As shown, Figure 8 This is a schematic diagram of the structure of the impurity activation chamber 8; As shown in the figure, valve 20 is located on the left side of impurity activation chamber 8, valve 21 is located on the right side of impurity activation chamber 8, and a fourth air inlet 33 is located on the top of impurity activation chamber 8. The fourth air inlet 33 is referred to as: air inlet air intake and air intake Argon and nitrogen can be introduced; The bottom of the impurity activation chamber 8 is equipped with a vacuum pump interface, which can be used to evacuate a vacuum by connecting an external fourth vacuum pump group. The first heater 31 and the second heater 32 are located on top of the substrate 10. A cooling plate is located at the bottom of the impurity activation chamber 8, and the cooling plate is cooled by water via a water pipe. The distance between the cooling plate and the substrate 10 is... The movable distance of substrate 10 is d. In order to achieve uniform cooling, substrate 10 can move back and forth. It should be noted that the impurity activation chamber 8 can achieve rapid annealing and annealing for a certain period of time between room temperature 25℃ and 1200℃. It should be further explained that, in this impurity activation chamber 8, after valves 7 (20) and 8 (21) are opened, the substrate 10 can be allowed to enter the impurity activation chamber 8 through the substrate transfer mechanism, controlling the distance between the substrate 10 and the second heater 32 to Z1, and controlling the distance between the substrate 10 and the cooling plate to... After closing valve 720, a vacuum can be drawn first, and the power supply of the first heater 31 can be turned on or maintained to heat the substrate 10 to T8. At this time, the activation gas is introduced through the gas inlet. air intake and air intake Gas is introduced into the impurity activation chamber 8, and after controlling the gas pressure, the power supply to the second heater 32 is turned on, causing the temperature of the substrate 10 to rise from [previous temperature]. Upgraded to After maintaining this temperature for the predetermined activation time, the power to the second heater 32 is turned off, and the water in the water pipe connected to the cooling plate is turned on, causing the temperature of the substrate 10 to drop rapidly. When the temperature of substrate 10 decreases to Then, open the valve 821 on the right and push the substrate 10 into the adjacent impurity activation chamber 8 through the substrate transfer mechanism. During the activation process, the substrate 10 will also be moved left and right by a distance d. d>D is selected to improve the uniformity of the activated film. Example 10 For reference Figure 9 As shown, Figure 9 The diagram shows the structure of the cooling chamber 9. Valve 21 is located on the left side of the cooling chamber 9, and valve 22 is located on the right side. A fifth air inlet 34 is located at the top of the cooling chamber 9. The fifth air inlet 34 is denoted as: Air Inlet air intake and air intake Argon and nitrogen can be introduced. The bottom of the cooling chamber 9 is equipped with a vacuum pump interface, which can be evacuated by connecting an external fifth vacuum pump group. A cooling plate is also provided at the bottom of the cooling chamber 9. The cooling plate is cooled by water through water pipes. The distance between the cooling plate inside the cooling chamber 9 and the substrate 10 is also [missing information]. The movable distance of substrate 10 is d. In order to achieve uniform cooling, substrate 10 can move back and forth. It should be noted that the main purpose of the cooling cavity 9 is to achieve rapid cooling, used to cool the substrate 10 to room temperature; It should be noted that, in this cooling chamber 9, after valves 9 (22) and 10 (23) are opened, the substrate 10 can be allowed to enter the cooling chamber 9 through the substrate transfer mechanism, controlling the distance between the substrate 10 and the cooling plate. After closing valves 9.22 and 10.23, a vacuum can be drawn first. At this time, the protective gas is introduced through the air inlet. air intake and air intake Gas is introduced into the cooling chamber 9. After controlling the gas pressure, the water in the water pipe connected to the cooling plate can be turned on, so that the temperature of the substrate 10 can be reduced to room temperature more quickly. After the temperature of the substrate 10 is reduced to room temperature, the valve 23 on the right is opened, and the substrate 10 is pushed out of the adjacent chamber system. Similarly, during the cooling process, the substrate 10 will be moved left and right. The distance of the left and right movement is d. d>D is selected to improve the uniformity of the substrate 10. Example 11 For reference Figure 10 As shown, Figure 10The film thickness variations of individual targets (target 1, target 2, and target 3) with distance in the following cavity types: lower contact layer cavity 3, lower injection layer cavity 4, deposition luminescent layer cavity 5, upper injection layer cavity 6, and upper contact layer cavity 7, denoted as T1, T2, and T3 respectively. The film thickness variations with distance for multiple targets in this system are also denoted as T1, T2, and T3. ; It should be noted that the width of each target is... The distance between the substrate 10 and the target, with a length or depth of L. It is adjustable. The distance between adjacent targets is D. If only a single target is used during film deposition, the film thickness curve on substrate 10 after a period of deposition will be... The width varies with distance, and the thickness is within 20% of the maximum thickness (t). Approximately the target width The thickness is 1-2 times that of a single target, therefore the usable area of ​​the deposited film is small when using a single target. Multiple targets were arranged, and the film thickness curve when target two was deposited alone was... The film thickness curve for target three deposition alone is as follows: When these three targets are simultaneously activated to deposit a thin film onto substrate 10, the thickness curve TT of the fabricated film is the sum of curves T1, T2, and T3. The width of the thickness within 10% of the maximum thickness t is... Approximately the width of three targets 3 With the target distance doubled, the width of the usable area of ​​the thin film is larger than when depositing with a single target. According to this system, the substrate 10 can move back and forth in the cavity for a distance of d. We can adjust the value of d to further increase the smoothness of the thin film thickness curve TT and reduce the change of thin film thickness with distance or position.

[0040] Example 12 For reference Figure 4 And as shown in 11, Figure 11 This is a system block diagram of the deposited light-emitting device structure of the present invention; It should be noted that substrate 10 is a No. 3 high-temperature resistant glass, capable of withstanding temperatures up to 1000℃, and can withstand vacuuming up to 10... - 6 Torr, plasma cleaning with a mixture of argon and H2 for 1-10 minutes, lower contact layer deposition using highly silicon-doped GaN, lower implantation layer deposition using low silicon-doped GaN, and light-emitting layer deposition using In. x Ga 1-x The upper injection layer is deposited with low-zinc-doped GaN, and the upper contact layer is deposited with high-zinc-doped GaN. During activation, rapid annealing at 800℃ and annealing at 500℃ are used.

[0041] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A continuous deposition system for fabricating a multilayer thin film structure for a light-emitting device array, characterized in that, The system includes: a substrate (10) transport mechanism, a control system, and a plurality of functional cavities arranged in series along the transport direction of the substrate (10), wherein the plurality of functional cavities include: Pre-vacuum chamber (1): It is equipped with a first air inlet (25), a first vacuum pump group and a first heating device (24) for pre-vacuuming and preheating the incoming substrate (10); Preheating and plasma cleaning chamber (2): It is equipped with a second air inlet (26), a second vacuum pump group, a second heating device (27) and at least two plasma sources for plasma bombardment cleaning of the substrate (10); Multilayer thin film deposition chamber group: including a lower contact layer deposition chamber (3), a lower injection layer deposition chamber (4), a light-emitting layer deposition chamber (5), an upper injection layer deposition chamber (6), and an upper contact layer deposition chamber (7). Each of the lower contact layer deposition chamber (3), lower injection layer deposition chamber (4), light-emitting layer deposition chamber (5), upper injection layer deposition chamber (6), and upper contact layer deposition chamber (7) is provided with a third air inlet (29), a third vacuum pump group, a third heating device (28), multiple sputtering targets, and multiple pulse power supplies corresponding to the sputtering targets. Impurity activation chamber (8): It is equipped with a fourth air inlet (33), a fourth vacuum pump group, a first heater (31) and a second heater (32) for rapid thermal annealing activation of the deposited film; Cooling chamber (9): It is equipped with a fifth air inlet (34), a fifth vacuum pump group and a cooling device, which are used to cool the substrate (10) to room temperature; The transfer mechanism is located between the pre-vacuum chamber (1), the preheating and plasma cleaning chamber (2), the lower contact layer deposition chamber (3), the lower injection layer deposition chamber (4), the light-emitting layer deposition chamber (5), the upper injection layer deposition chamber (6), the upper contact layer deposition chamber (7), the impurity activation chamber (8), and the cooling chamber (9), and is used to transfer the substrate (10) sequentially from the pre-vacuum chamber (1) to the cooling chamber (9) in a vacuum environment. Control system: It is electrically connected to the vacuum pump group, heating device, plasma source, sputtering target power supply and transmission mechanism of the pre-vacuum chamber (1), preheating and plasma cleaning chamber (2), deposition lower contact layer chamber (3), deposition lower injection layer chamber (4), deposition luminescent layer chamber (5), deposition upper injection layer chamber (6), deposition upper contact layer chamber (7), impurity activation chamber (8) and cooling chamber (9), respectively, and is used to control gas pressure, temperature and process time; The internal structures of the lower contact layer cavity (3), lower injection layer cavity (4), luminescent layer cavity (5), upper injection layer cavity (6), and upper contact layer cavity (7) in the multilayer thin film deposition cavity group are the same, and all include: At least three strip targets arranged along the width direction of the substrate (10), denoted as target one, target two and target three, with a spacing of D between adjacent targets; A substrate support is used to support the substrate (10) and make it reciprocate linearly along the direction perpendicular to the transport direction during the deposition process. The distance of the movement is d, and d > D.

2. The continuous deposition system for fabricating a multilayer thin film structure of a light-emitting device array according to claim 1, characterized in that, Valves 2 (15), 3 (16), 4 (17), 5 (18), 6 (19), 7 (20), 8 (21), and 9 (22) are sequentially arranged between the pre-vacuum chamber (1), the preheating and plasma cleaning chamber (2), the lower contact layer chamber (3), the lower injection layer chamber (4), the luminescent layer chamber (5), the upper injection layer chamber (6), the upper contact layer chamber (7), the impurity activation chamber (8), and the cooling chamber (9). A valve 1 (14) is also arranged on the side of the pre-vacuum chamber (1) away from the preheating and plasma cleaning chamber (2). A valve 10 (23) is also arranged on the outside of the cooling chamber (9). A valve 2 (15) is located between the pre-vacuum chamber (1) and the preheating and plasma cleaning chamber (2). Valve 3 (16) is located between the preheating and plasma cleaning chamber (2) and the deposition lower contact layer chamber (3). Valve 4 (17) is located between the deposition lower contact layer chamber (3) and the deposition lower injection layer chamber (4). Valve 5 (18) is located between the deposition lower injection layer chamber (4) and the deposition luminescent layer chamber (5). Valve 6 (19) is located between the deposition luminescent layer chamber (5) and the deposition upper injection layer chamber (6). Valve 7 (20) is located between the deposition upper injection layer chamber (6) and the deposition upper contact layer chamber (7). Valve 8 (21) is located between the deposition upper contact layer chamber (7) and the impurity activation chamber (8). Valve 9 (22) is located between the impurity activation chamber (8) and the cooling chamber (9).

3. The continuous deposition system for fabricating a multilayer thin film structure of a light-emitting device array according to claim 1, characterized in that, In the cavity (2), cavity (3) ... cavity (8) and cavity (9), the substrate support is also configured to drive the substrate (10) to perform reciprocating linear motion, and the motion distance d is greater than the target spacing D.

4. The continuous deposition system for fabricating a multilayer thin film structure of a light-emitting device array according to claim 1, characterized in that, The impurity activation cavity (8) further includes a cooling plate, which is disposed below the substrate (10) at a distance of [missing information]. It is connected to a circulating water pipe; the second heater (32) is a rapid heating heater, used to rapidly increase the temperature of the substrate (10) from 0.5°C to 0.5°C in a short time. Increase to impurity activation temperature .

5. The continuous deposition system for fabricating a multilayer thin film structure of a light-emitting device array according to claim 1, characterized in that, The targets in the lower contact layer cavity (3), the lower injection layer cavity (4), the deposition luminescent layer cavity (5), the upper injection layer cavity (6), and the upper contact layer cavity (7) are all strip-shaped.

6. A continuous deposition method for fabricating a light-emitting device array using the system described in any one of claims 1-5, characterized in that, The specific operating steps include the following: Step S1, Feeding and Pre-vacuuming: Open valve one (14) of the pre-vacuum chamber (1), send the substrate (10) into the pre-vacuum chamber (1), close valve one (14), start the first vacuum pump group to evacuate to the predetermined vacuum level, and at the same time start the first heating device (24) to heat the substrate (10) to the first substrate (10) temperature T1 to remove foreign matter adsorbed on the surface of the substrate (10). After a predetermined time, open valve two (15) to push the substrate (10) into the preheating and plasma cleaning chamber (2). Step S2, Preheating and Plasma Cleaning: After the substrate (10) enters the preheating and plasma cleaning chamber (2), valve two (15) is closed, the second vacuum pump group is started to evacuate, and the second heating device (27) is started to heat the substrate (10) to the temperature of the second substrate (10). Cleaning gas is introduced through the second air inlet (26). Ar or And maintain the predetermined pressure. At this time, at least two plasma sources are turned on to generate plasma and perform ion bombardment cleaning on the surface of the substrate (10). During the cleaning process, the substrate (10) is controlled to move back and forth along its width direction, with a distance d greater than D. After the cleaning is completed, the plasma source is turned off, valve three (16) is opened, and the substrate (10) is pushed into the cavity (3) of the deposited contact layer. Step S3, Multilayer Thin Film Deposition: After the substrate (10) is pushed into the deposition lower contact layer cavity (3), valves four (17), five (18), six (19) and seven (20) are opened in sequence. The substrate (10) enters the deposition lower injection layer cavity (4), deposition light-emitting layer cavity (5), deposition upper injection layer cavity (6) and deposition upper contact layer cavity (7) in sequence to deposit each functional layer. During the deposition of the deposition lower contact layer cavity (3), deposition lower injection layer cavity (4), deposition light-emitting layer cavity (5), deposition upper injection layer cavity (6) and deposition upper contact layer cavity (7), the temperature of the substrate (10) is kept between 400°C and 700°C, and the substrate (10) is controlled to reciprocate in a direction perpendicular to the transmission direction with a movement distance d > D to ensure large-area deposition uniformity. Step S4, Impurity Activation: After deposition, the substrate (10) enters the impurity activation chamber (8), valve eight (21) is closed and a vacuum is drawn, and the first heater (31) is started to heat the substrate (10) to [temperature value missing]. An activation gas is introduced, and the second heater (32) is started, which quickly raises the temperature of the substrate (10) from [previous temperature]. Increase to impurity activation temperature and maintain the scheduled activation time. After activation, the second heater (32) is turned off, and the cooling plate water circuit is turned on to lower the substrate (10) temperature to a lower level. ; Step S5, Cooling and Unloading: When the substrate (10) temperature drops to Then, the substrate (10) is transferred to the cooling chamber (9), valve eight (21) is closed, protective gas is introduced, and the cooling device is turned on to reduce the temperature of the substrate (10) from 9 to 10. The temperature is lowered to room temperature. During the cooling process, the substrate (10) is controlled to reciprocate. The movement distance d is greater than D. When the temperature of the substrate (10) reaches room temperature, valve nine (22) is opened to push the substrate (10) and its multilayer thin film structure out of the system, thus completing the fabrication of the light-emitting device.

7. The continuous deposition method for manufacturing a light-emitting device array according to claim 6, characterized in that, In step S3, the operations within the lower contact layer cavity (3), the lower injection layer cavity (4), the luminescent layer cavity (5), the upper injection layer cavity (6), and the upper contact layer cavity (7) are as follows: Depositing the contact layer cavity (3): Controlling the substrate (10) temperature to Sputtering gas is introduced, and the pulsed power supply for the lower contact layer target is turned on, allowing deposition to proceed to a thickness specified in the original text. ; Deposition of the implantation layer cavity (4): Controlling the substrate (10) temperature to Sputtering gas is introduced, and the pulsed power supply for the lower injection layer target is turned on, allowing deposition to proceed to the desired thickness. ; Deposition of the light-emitting layer cavity (5): Controlling the temperature of the substrate (10) to Sputtering gas is introduced, and the pulsed power supply to the luminescent target is turned on, allowing deposition to proceed to a thickness of [thickness value missing]. ; Deposition of the implantation layer cavity (6): Controlling the substrate (10) temperature to Sputtering gas is introduced, and the pulse power supply for the upper injection layer target is turned on, depositing to a thickness of [thickness value missing]. ; Depositing the contact layer cavity (7): Controlling the substrate (10) temperature to Sputtering gas is introduced, and the pulsed power supply to the upper contact layer target is turned on, allowing deposition to proceed to a thickness specified in the original text. .

8. The continuous deposition method for manufacturing a light-emitting device array according to claim 5, characterized in that, In step S3, if a high-efficiency device is to be fabricated, a carrier blocking layer deposition step is added between the deposition of the injection layer cavity (4) and the deposition of the light-emitting layer cavity (5), and another carrier blocking layer deposition step is added between the deposition of the injection layer cavity (6) and the deposition of the contact layer cavity (7). The specific operation is as follows: After the injection layer is deposited in the injection layer cavity (4), the substrate (10) enters the additional cavity 3B to deposit the first carrier blocking layer, the thickness of which is denoted as . Then, the substrate enters the deposition cavity (5) to deposit the luminescent layer; after depositing the injection layer in the deposition cavity (6), the substrate (10) enters the additional cavity 7B to deposit the second carrier blocking layer, the thickness of which is denoted as . Then, it enters the cavity for depositing the upper contact layer (7) to deposit the upper contact layer.

9. The continuous deposition method for manufacturing a light-emitting device array according to claim 6, characterized in that, The duty cycle and frequency of the pulse power supply are adjustable. By adjusting the pulse parameters, high-density thin film deposition can be achieved at low temperatures of 400℃ to 700℃, while avoiding atomic diffusion between adjacent thin film layers at high temperatures of 800℃ to 1200℃.

10. The continuous deposition method for manufacturing a light-emitting device array according to claim 6, characterized in that, The substrate (10) is an amorphous and low-melting-point substrate (10). The multilayer thin film structure includes a lower contact layer, a lower injection layer, a light-emitting layer, an upper injection layer, and an upper contact layer, wherein the light-emitting layer is a single light-emitting layer or a stacked structure of multiple light-emitting layers to achieve broadband light emission.

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